DE202023103171U1 - An efficient perovskite solar cell device based on copper iodide and tin oxide - Google Patents

Abstract

An efficient perovskite solar cell device (100) based on copper iodide and tin oxide, the device (100) being composed of multiple layers bonded together, the multiple layers comprising:
a front contact (102);
a transparent conductive oxide (TCO) (104) in connection with the front contact (102) consisting of tin oxide (SnO ₂ F);
a buffer layer (106) interposed between the TCO (104) and a first defect layer (108);
an absorber layer (110) in connection with the first defect layer (108) consisting of organic lead halide perovskites (CH ₃ NH ₃ PbI _3-x Cl _x );
a second defect layer (112) connected to the absorber layer (110); And
a hole transport layer (114) composed of copper iodide (CuI) and interposed between the second defect layer (112) and a back contact (116).

Description

FIELD OF THE INVENTION

The present invention relates to the field of solar cell devices. More particularly, the present subject matter relates to an efficient, non-toxic perovskite solar cell device containing copper iodide and tin oxide.

BACKGROUND OF THE INVENTION

The widespread awareness of the extinction of non-renewable energy has pushed researchers to decide to explore and use renewable energy. Solar cells are one of the fast growing technologies. Solar cells also face some environmental, implementation, and manufacturing challenges. Because solar energy is a freely available source, energy loss is the least of your concern, but the amount of energy used is a major concern. Since with solar cells almost 50% of the energy is not used. Solar cell applications are pervasive in modern lifestyles as well as in rural areas. For any solar cell, higher energy conversion efficiency is always an important design goal as it enables maximum energy utilization.

There are many applications where solar cells can be used as solar heaters, solar lights, batteries, satellites, etc. HTL and ETL are integrated to increase efficiency and control the movement of holes and electrons within the interfaces. The integration of different layers in the architecture of solar cell devices has opened opportunities to explore different materials that can be integrated for improved solar cell performance. Alternatives to the anti-toxic perovskite solar cells (PSCs) are gaining a lot of attention as a viable option for research since lead-based halide perovskites exhibit toxic properties. Tungsten disulfide is a non-toxic, viable new option with a direct bandgap of 1.8 eV. Solar cells seem to be the best alternative to convert available light energy into electricity.

According to an application of the prior art, PSC can be used as an absorber layer with variants as organic-inorganic PSC. The PSC halides can affect the absorption wavelength range. The bromide perovskite is suitable for shorter wavelengths while the iodide perovskite is used for longer wavelengths. The PSC retains very good optical and electrical properties. However, the stability of PSCs depends on the morphology and the choice of materials. The materials chosen for the different layers determine the behavior of the cell. The material with a low band gap should _have a large VOC.

The US patent application 20200176196 discloses perovskite solar cell configurations comprising a flexible metal substrate (e.g., including a metal-doped TiO ₂ layer), a perovskite layer, and a transparent electrode layer (e.g., including a dielectric/metal/dielectric structure), wherein the Perovskite layer is provided between the flexible metal substrate and the transparent electrode layer.

CN patent application 111640870 discloses a perovskite solar cell and manufacturing method and comprises the steps of: spin coating an electron transport layer on a transparent conductive substrate; spin-coating colloid of lead iodide on the electron transport layer and performing an annealing treatment to form a lead iodide film; spin-coating halide cations on the lead iodide thin film and performing annealing treatment to produce a perovskite light absorbing layer and a lead iodide passivation structure; spraying lead iodide colloid with a coating material on the perovskite light absorption layer to form a lead iodide crystal passivation layer; preparing a hole transport layer on the lead iodide crystal passivation layer; A silver electrode was prepared on the hole transport layer.

However, the above prior art discloses a less efficient perovskite solar cell.

Copper iodide and tin oxide based perovskite solar cell device with a power conversion efficiency of 35.83%.

The technical advances disclosed by the present invention overcome the limitations and disadvantages of existing and conventional systems and methods.

SUMMARY OF THE INVENTION

The present invention generally relates to an efficient perovskite solar cell device based on copper iodide and tin oxide.

One object of the present invention is to simulate a perovskite solar cell device;

A further aim of the present invention is to provide an efficient solar cell with an energy conversion efficiency of 35.83%; And

Another object of the present invention is to evaluate the parameters of perovskite solar cell (PSC) design using copper iodide (CuI) as hole transport layer and tin oxide (SnO ₂ F) as transparent conducting oxide.

• ein Frontkontakt;
• ein transparentes leitendes Oxid (TCO) in Verbindung mit dem Frontkontakt, bestehend aus Zinnoxid (SnO₂F);
• eine Pufferschicht, die zwischen dem TCO und einer ersten Defektschicht angeordnet ist;
• eine Absorberschicht in Verbindung mit der ersten Defektschicht, bestehend aus organischen Bleihalogenid-Perowskiten (CH₃ NH₃PbI_3-xCl_x);
• eine zweite Defektschicht, die mit der Absorberschicht verbunden ist;
• eine Lochtransportschicht aus Kupferiodid (CuI), die zwischen der zweiten Defektschicht und einem Rückkontakt liegt.

In one embodiment, an efficient perovskite solar cell device based on copper iodide and tin oxide, the device being composed of multiple layers bonded together, the multiple layers comprising:

• a front contact;
• a transparent conductive oxide (TCO) in connection with the front contact consisting of tin oxide (SnO ₂ F);
• a buffer layer disposed between the TCO and a first defect layer;
• an absorber layer in connection with the first defect layer consisting of organic lead halide perovskites (CH ₃ NH ₃ PbI _3-x Cl _x );
• a second defect layer connected to the absorber layer;
• a copper iodide (CuI) hole transport layer sandwiched between the second defect layer and a back contact.

In one embodiment, the direct band gap value of CuI is 3.1 eV.

In one embodiment, the front and back contact is proposed with a thermionic emission/surface recombination velocity of 10 ⁵ cm/s for electrons and 10 ¹⁰ cm/s for holes with flat band work function calculation.

In one embodiment, the thermal velocity for both electrons and holes is set to 1x107 cm/s for multiple layers.

In one embodiment, the thickness of the TCO is 300 nm, the buffer layer is 50 nm, the first defect layer is 10 nm, the absorber layer is 700 nm, the second defect layer is 10 nm and the HTL is 300 nm.

In one embodiment, the direct bandgap for the TCO is 3.5 eV, the buffer layer is 325 eV, the first defect layer is 1.55 eV, the absorber layer is 1.55 eV, the second defect layer is 1.55 eV, and the HTL is 3.1 eV.

In one embodiment, the temperature of the device is set to 300 K, the power of the considered sunlight is 1000 W/m ² .

In one embodiment, the electron affinity is optimized to a value of 3.9 for the absorber layer and the acceptor density is optimized to an increased value of 5×10 ¹⁸ cm ^-3 .

In order to further clarify the advantages and features of the present invention, a more detailed description of the invention will be given with reference to specific embodiments thereof illustrated in the accompanying drawings. It is understood that this drawing only typical Ausführungsfor men of the invention and is therefore not to be considered as limiting the scope thereof. The invention is described and explained in greater detail with reference to the attached drawing.

character list

• 1 zeigt ein Blockdiagramm einer effizienten Perowskit-Solarzellenvorrichtung auf Basis von Kupferiodid und Zinnoxid.

These and other features, aspects and advantages of the present invention will be better understood when the following detailed description is read with reference to the accompanying drawing, in which like reference numbers represent like parts, wherein:

• 1 Figure 12 shows a block diagram of an efficient perovskite solar cell device based on copper iodide and tin oxide.

In addition, skilled craftsmen will recognize that elements in the drawing are presented for simplicity and may not necessarily have been drawn to scale. For example, the flowcharts illustrate the method with key steps that help improve understanding of aspects of the present disclosure. Furthermore, in view of the construction of the device, one or more components of the device may have been represented in the drawing by conventional symbols, and the drawing may show only the specific details relevant to understanding the embodiments of the present disclosure around the drawing not to be obscured by details that would be readily apparent to one of ordinary skill in the art having the benefit of the description herein.

DETAILED DESCRIPTION:

For the purposes of promoting an understanding of the principles of the invention, reference will now be made to the embodiment illustrated in the drawings and specific language will be used to describe the same. It should be understood, however, that no limitation on the scope of the invention is intended thereby, as variations and further modifications to the illustrated system and further applications of the principles of the invention illustrated therein are contemplated as would normally occur to one skilled in the art Technique to which the invention relates.

It will be understood by those skilled in the art that the foregoing general description and the following detailed description are exemplary and explanatory of the invention and are not intended to be limiting.

Reference throughout this specification to "an aspect," "another aspect," or similar language means that a particular feature, structure, or feature described in connection with the embodiment is in at least one embodiment of the present invention is included. As such, the phrases "in one embodiment," "in another embodiment," and similar phrases throughout this specification may, but do not necessarily, refer to the same embodiment.

The terms "comprises," "comprising," or other variations thereof are intended to cover non-exclusive inclusion such that a process or method that includes a list of steps includes not only those steps, but may include other steps not expressly listed or included process or this method are inherent. Likewise, any device or subsystem or element or structure or component preceded by “includes...a” does not exclude, without further limitation, the existence of other devices or other subsystems or other elements or other structure other components or additional devices or additional subsystems or additional elements or additional structures or additional components.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The system, methods, and examples provided herein are for purposes of illustration only and are not intended to be limiting.

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

• einen Frontkontakt (102);
• ein transparentes leitendes Oxid (TCO) (104) in Verbindung mit dem Frontkontakt (102), bestehend aus Zinnoxid (SnO₂ F);
• eine Pufferschicht (106), die zwischen dem TCO (104) und einer ersten Defektschicht (108) liegt;
• eine Absorberschicht (110) in Verbindung mit der ersten Defektschicht (108), bestehend aus organischen Bleihalogenid-Perowskiten (CH₃NH₃PbI_3-x Cl_x);
• eine zweite Defektschicht (112), die mit der Absorberschicht (110) verbunden ist;
• eine Lochtransportschicht (114), die aus Kupferiodid (CuI) besteht und zwischen der zweiten Defektschicht (112) und einem Rückkontakt (116) liegt.

1 Figure 12 shows a block diagram of an efficient copper iodide and tin oxide based perovskite solar cell device (100), the device (100) being composed of multiple interconnected layers, the multiple layers comprising:

• a front contact (102);
• a transparent conductive oxide (TCO) (104) in connection with the front contact (102) consisting of tin oxide (SnO ₂ F);
• a buffer layer (106) interposed between the TCO (104) and a first defect layer (108);
• an absorber layer (110) in connection with the first defect layer (108) consisting of organic lead halide perovskites (CH ₃ NH ₃ PbI _3-x Cl _x );
• a second defect layer (112) connected to the absorber layer (110);
• a hole transport layer (114) composed of copper iodide (CuI) and interposed between the second defect layer (112) and a back contact (116).

In one embodiment, the direct band gap value of CuI is 3.1 eV.

In one embodiment, the front and back contact is proposed with a thermionic emission/surface recombination velocity of 10 ⁵ cm/s for electrons and 10 ¹⁰ cm/s for holes with flat band work function calculation.

In one embodiment, the thermal velocity for both electrons and holes is set to 1x107 cm/s for multiple layers.

In one embodiment, the thickness of the TCO is 300 nm, the buffer layer is 50 nm, the first defect layer is 10 nm, the absorber layer is 700 nm, the second defect layer is 10 nm and the HTL is 300 nm.

In one embodiment, the direct bandgap for the TCO is 3.5 eV, the buffer layer is 3.25 eV, the first defect layer is 1.55 eV, the absorber layer is 1.55 eV, the second defect layer is 1.55 eV, and the HTL is 3.1 eV.

In one embodiment, the temperature of the device is set to 300 K, the power of the considered sunlight is 1000 W/m ² .

In one embodiment, the electron affinity is optimized to a value of 3.9 for the absorber layer and the acceptor density is optimized to an increased value of 5×10 ¹⁸ cm ^-3 . Table 1: Optimized device parameters parameter total cost of ownership buffer layer 1. defect layer - absorber layer 2nd defect layer - HT L Thickness (nm) 300 50 10 700 10 30 0 ZB (eV) 3.5 325 1.55 1.55 1.55 3.1 Electron affinity (eV) 4 4.08 3.9 3.90 3.9 2.6 εr 9 9 6.5 6.5 6.5 6.5 E _m (cm ² /vs) 20 340 2 2 2 44 H _m (cm ² /vs) 10 50 2 2 2 44 N _D (cm ^-3 ) 6X 10 ¹⁹ 1×10 ¹⁷ 1×10 ¹⁴ 1×10 ¹⁴ 1×10 ¹⁶ - NA (cm ^-3 ) - - - - - 5X 10 18 NT (cm ^-3 ) 1×10 ¹⁶ 1×10 ¹⁹ 1×10 ¹¹ 1×10 ¹⁰ 1×10 ¹¹ 1x 10 18

wobei -e die Ladung eines Elektrons ist,
Φ ist das elektrostatische Potential
E _F ist das Fermi-Niveau im Inneren des Materials
Gleichung 1 kann wie folgt umgeschrieben werden: $$\varnothing =V-\raisebox{1ex}{$W$}\!\left/ \!\raisebox{-1ex}{$e$}\right.$$

The front and back contact is proposed with a thermionic emission/surface recombination rate of 10 ⁵ cm/s for electrons and 10 ¹⁰ cm/s for holes with flat band calculation for the work function. In general, the work function is equated as follows: $$W=-e\varnothing -E_f$$

where -e is the charge of an electron,
Φ is the electrostatic potential
E _F is the Fermi level inside the material
Equation 1 can be rewritten as follows: $$\varnothing =V-\raisebox{1ex}{$W$}\!\left/ \!\raisebox{-1ex}{$e$}\right.$$

In the above equation, V= - E _F /V. The parameters of all layers in the proposed device structure are given in the table. NA is the acceptor density, ND is the donor density, and Nt is the total defect density defined for the respective layers of the proposed structure. The defect density is tracked by the Shockley-Read-Hall recombination model. Eg is the Ban gap for a given layer, the thickness is given in nm, ε r is the relative permittivity. The conduction band density and valence band density remain the same for all layers. The thermal rate is set to 1 × 10 ⁷ cm/s for all layers for both electrons and holes. The absorption is set to sqrt( ) at Eg via the absorption model setup panel, with the alpha value chosen to 10 ⁵ becomes . No series or shunt resistances are taken into account in the simulation. The neutral defects are defined for all layers with an energy level with respect to the reference of 0.6 eV, considering the energy distribution as uniform.

The acceptor and donor densities provide information about the mobility of electrons and holes. This is affected by an electric field that is directly proportional to the dopant concentration; An increase in concentration leads to an increase in the electric field. The high series resistance results from the low acceptor density, which affects the PCE. In order to improve the PCE, the acceptor density is optimized to an increased value of 5×10 ¹⁸ cm ^-3 . Research on perovskites has shown that the recommended thickness range is 400 to 700 nm. Since a smaller thickness will cause PCE to be affected by deteriorating light absorption. The optimized design considered a thickness value of 700 nm for absorbers and 300 nm for TCO and HTL layers. The defects present, if not properly disciplined, will result in charge carriers primitively recombineing. The high efficiency of the device is also demonstrated with a higher total defect density value of 1×10 ¹⁸ cm ^-3 for CuI.

The optimization of the device and layer parameters in relation to the properties at the same time increased the PCE to a competent level.

By optimizing the morphological parameters of the device using copper iodide as the HTL and CH ₃ NH ₃ PbI ₃ as the absorber, an efficient PCE of 35.83% is observed, representing a 39.52% improvement over the existing structure. Increasing the thickness of the absorber layer leads to a significant increase in the value of the PCE. The absorber layer is best optimized at a thickness of 700 nm. Reducing the thickness of the absorber layer to 300 nm results in lower light absorption, ultimately resulting in a low PCE of 30.12%. The device showed FF improvement from 84.11 to 85.88 with a 2.1 percent improvement and V _oc was increased from 1.21 to 1.674 V with a 46.4 percent improvement.

Table 2 shows a comparison between the existing and the optimized device. parameter existing device Optimized device % improvement voc, v 1.21 1,674 46.4 J _sc , mA/cm ² 25.33 24.92 - fill factor % 84.11 85.88 2.1 PCE % 25.68 35.83 39.52

The drawing and the above description give examples of embodiments. Those skilled in the art will recognize that one or more of the elements described may well be combined into a single functional element. Alternatively, certain elements can be broken down into multiple functional elements. Elements of one embodiment may be added to another embodiment. For example, the orders of the processes described herein may be changed and are not limited to the manner described herein. Additionally, the actions of a flowchart need not be implemented in the order shown; Not all actions have to be carried out. Actions that are not dependent on other actions can also be performed in parallel with the other actions. The scope of the embodiments is in no way limited by these specific examples. Numerous variations, whether explicitly stated in the specification or not, such as B. Differences in structure, dimensions and material use are possible. The scope of the embodiments is at least as broad as indicated by the following claims.

Advantages, other benefits, and solutions to problems have been described above in terms of specific embodiments. However, the advantages, benefits, problem solutions, and any component that may cause any benefit, advantage, or solution to occur or become more pronounced, should not be construed as a critical, required, or essential function or component of any or all of the claims.

reference list

100

An Efficient Perovskite Solar Cell Based On Copper Iodide And Tin Oxide.

102

front contact

104

Transparent conductive oxide

106

buffer layer

108

First defect layer

110

absorber layer

112

Second defect layer

114

hole transport layer

116

recall

QUOTES INCLUDED IN DESCRIPTION

This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent Literature Cited

• US20200176196 [0005]

Claims (8)

An efficient perovskite solar cell device (100) based on copper iodide and tin oxide, the device (100) being composed of multiple layers bonded together, the multiple layers comprising: a front contact (102); a transparent conductive oxide (TCO) (104) in connection with the front contact (102) consisting of tin oxide (SnO ₂ F); a buffer layer (106) interposed between the TCO (104) and a first defect layer (108); an absorber layer (110) in connection with the first defect layer (108) consisting of organic lead halide perovskites (CH ₃ NH ₃ PbI _3-x Cl _x ); a second defect layer (112) connected to the absorber layer (110); And a hole transport layer (114) composed of copper iodide (CuI) and interposed between the second defect layer (112) and a back contact (116). device after claim 1 , where the value of the direct band gap of CuI is 3.1 eV. device after claim 1 , where the front and back contact is proposed with a thermionic emission/surface recombination velocity of 10 ⁵ cm/s for electrons and 10 ¹⁰ cm/s for holes with flat band calculation for the work function. device after claim 1 , where the thermal velocity for the multiple layers is set to 1 × 10 ⁷ cm/s for both electrons and holes device after claim 1 , where the thickness of the TCO is 300 nm, the buffer layer is 50 nm, the first defect layer is 10 nm, the absorber layer is 700 nm, the second defect layer is 10 nm, and the HTL is 300 nm. device after claim 1 , where the direct band gap for the TCO is 3.5 eV, the buffer layer is 325 eV, the first defect layer is 1.55 eV, the absorber layer is 1.55 eV, the second defect layer is 1.55 eV, and the HTL is 3.1 eV. device after claim 1 , where the temperature of the device is set at 300 K and the power of the considered sunlight is 1000 W/m ² . device after claim 1 , where the electron affinity is optimized to a value of 3.9 for the absorber layer and the acceptor density is optimized to an increased value of 5×10 ¹⁸ cm- ³ .

Images