DE202005010697U1 - Transparent field effect transistor has mechanically flexible base made of inorganic semiconductor separated from an aqueous solution - Google Patents

Transparent field effect transistor has mechanically flexible base made of inorganic semiconductor separated from an aqueous solution Download PDF

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Publication number
DE202005010697U1
DE202005010697U1 DE200520010697 DE202005010697U DE202005010697U1 DE 202005010697 U1 DE202005010697 U1 DE 202005010697U1 DE 200520010697 DE200520010697 DE 200520010697 DE 202005010697 U DE202005010697 U DE 202005010697U DE 202005010697 U1 DE202005010697 U1 DE 202005010697U1
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DE
Germany
Prior art keywords
inorganic semiconductor
aqueous solution
field effect
effect transistor
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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DE200520010697
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German (de)
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Individual
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Individual
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Publication date
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Priority to DE200520010697 priority Critical patent/DE202005010697U1/en
Publication of DE202005010697U1 publication Critical patent/DE202005010697U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

Abstract

A transparent field effect transistor has a transparent substrate (1). The transistor further has a transport charge-transporting layer (5) which is an inorganic semiconductor with two electrical contacts (6, 7) and a transparent gate electrode (3). The contacts are separated from the gate electrode by the active layer and electrical insulation layer (4). A voltage applied to the contacts and gate electrode is modulated at the interface between the active layer and insulation layer. The substrate is mechanically flexible. The active layer is a transparent inorganic semiconductor material that has been separated from an aqueous solution.
DE200520010697 2005-07-07 2005-07-07 Transparent field effect transistor has mechanically flexible base made of inorganic semiconductor separated from an aqueous solution Expired - Lifetime DE202005010697U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE200520010697 DE202005010697U1 (en) 2005-07-07 2005-07-07 Transparent field effect transistor has mechanically flexible base made of inorganic semiconductor separated from an aqueous solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200520010697 DE202005010697U1 (en) 2005-07-07 2005-07-07 Transparent field effect transistor has mechanically flexible base made of inorganic semiconductor separated from an aqueous solution

Publications (1)

Publication Number Publication Date
DE202005010697U1 true DE202005010697U1 (en) 2005-09-15

Family

ID=35034591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200520010697 Expired - Lifetime DE202005010697U1 (en) 2005-07-07 2005-07-07 Transparent field effect transistor has mechanically flexible base made of inorganic semiconductor separated from an aqueous solution

Country Status (1)

Country Link
DE (1) DE202005010697U1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008058040A1 (en) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulations containing a mixture of ZnO cubanes and method for producing semiconducting ZnO layers
DE102012206234A1 (en) 2012-04-17 2013-10-17 Evonik Industries Ag Formulations containing ammoniacal hydroxo-zinc compounds

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008058040A1 (en) 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulations containing a mixture of ZnO cubanes and method for producing semiconducting ZnO layers
DE102012206234A1 (en) 2012-04-17 2013-10-17 Evonik Industries Ag Formulations containing ammoniacal hydroxo-zinc compounds
WO2013156274A1 (en) 2012-04-17 2013-10-24 Evonik Industries Ag Formulations comprising ammoniacal hydroxo-zinc compounds

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R086 Non-binding declaration of licensing interest
R207 Utility model specification

Effective date: 20051020

R156 Lapse of ip right after 3 years

Effective date: 20090203