DE20119647U1 - Low frequency low level signal amplifier for infrared detector has shared amplifiers - Google Patents

Low frequency low level signal amplifier for infrared detector has shared amplifiers

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Publication number
DE20119647U1
DE20119647U1 DE20119647U DE20119647U DE20119647U1 DE 20119647 U1 DE20119647 U1 DE 20119647U1 DE 20119647 U DE20119647 U DE 20119647U DE 20119647 U DE20119647 U DE 20119647U DE 20119647 U1 DE20119647 U1 DE 20119647U1
Authority
DE
Germany
Prior art keywords
amplifier
unit
detector
filter units
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE20119647U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steinel GmbH and Co KG
Original Assignee
Steinel GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steinel GmbH and Co KG filed Critical Steinel GmbH and Co KG
Priority to DE20119647U priority Critical patent/DE20119647U1/en
Publication of DE20119647U1 publication Critical patent/DE20119647U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A low frequency low level signal amplifier has a thermopile (10) and difference unit (34) with parallel measurement and reference channel detectors (16, 18) and shared circuit board current amplifier (20, 22) stages with band pass filters (24, 26) centered on the infrared transmitter (12) modulation frequency.

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßtThe description text was not recorded electronically

Claims (10)

1. Verstärkervorrichtung für niederfrequente Kleinstsi­ gnale eines Detektors, insbesondere eines in einer infrarotoptischen Gasmeßeinheit vorgesehenen Infra­ rotdetektors (10), mit
einer einem Meßkanal (16) des Detektors zugeordneten und diesem nachgeschalteten ersten niederohmigen Stromverstärkerstufe (20) und
einer dazu parallelen, einem Referenzkanal (18) des Detektors zugeordneten und diesem nachgeschalteten zweiten niederohmigen Stromverstärkerstufe (22),
einem Paar von eine Bandpaßcharakteristik aufweisen­ den, der ersten Stromverstärkerstufe bzw. der zweiten Stromverstärkerstufe nachgeschalteten Filtereinheiten (24, 26), wobei eine Durchlaßfrequenz der Filterein­ heiten an eine Signalfrequenz des Kleinstsignals, insbesondere eine Betriebsfrequenz des dem Infrarot­ detektor zugeordneten Strahlungserzeugers, angepasst ist,
und einer dem Paar von Filtereinheiten nachgeschalte­ ten Differenzeinheit (34), die zum Bilden eines Meß­ signals aus einer Differenz von Ausgangssignalen der Filtereinheiten ausgebildet ist.1. Amplifier device for low-frequency Kleinstsi signals of a detector, in particular an infrared detector ( 10 ) provided in an infrared-optical gas measuring unit, with
a first low-resistance current amplifier stage ( 20 ) assigned to a measuring channel ( 16 ) of the detector and connected downstream thereof
a second low-impedance current amplifier stage ( 22 ), which is parallel to this and assigned to a reference channel ( 18 ) of the detector,
a pair of bandpass characteristics have the filter units ( 24 , 26 ) connected downstream of the first current amplifier stage or the second current amplifier stage, a pass frequency of the filter units being adapted to a signal frequency of the minimum signal, in particular an operating frequency of the radiation generator assigned to the infrared detector,
and a differential unit ( 34 ) connected downstream of the pair of filter units and designed to form a measurement signal from a difference between output signals of the filter units. 2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass die erste und die zweite Stromverstärkerstufe (20, 22) jeweils als Operationsverstärker realisiert sind, deren jeweilige, insbesondere durch Tempera­ tureinflüsse bedingte Eingangssignaldifferenz(Offset) durch eine Kompensationsschaltung kompensiert ist.2. Device according to claim 1, characterized in that the first and the second current amplifier stage ( 20 , 22 ) are each implemented as operational amplifiers whose respective input signal difference (offset), which is in particular caused by temperature influences, is compensated by a compensation circuit. 3. Vorrichtung nach Anspruch 1 oder 2, dadurch gekenn­ zeichnet, dass die Filtereinheiten (24, 26) als fre­ quenzabhängige Verstärker mittels eines Paares von Operationsverstärkern realisiert sind. 3. Device according to claim 1 or 2, characterized in that the filter units ( 24 , 26 ) are realized as fre frequency-dependent amplifier by means of a pair of operational amplifiers. 4. Vorrichtung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass den Filtereinheiten in Richtung auf die Differenzeinheit jeweils eine bevorzugt mit­ tels Operationsverstärkern realisierte weitere Ver­ stärkereinheit (28, 30) nachgeschaltet ist.4. Device according to one of claims 1 to 3, characterized in that the filter units in the direction of the differential unit in each case a further Ver amplifier unit ( 28 , 30 ) is preferably implemented with operational amplifiers. 5. Vorrichtung nach Anspruch 4, dadurch gekennzeichnet, dass eine Verstärkung der weiteren Verstärkereinhei­ ten, insbesondere der in dem Zweig des Referenzkanals liegenden weiteren Verstärkereinheit (30), einstell­ bar ausgebildet ist.5. The device according to claim 4, characterized in that an amplification of the further amplifier units, in particular the further amplifier unit ( 30 ) located in the branch of the reference channel, is designed to be adjustable. 6. Vorrichtung nach einem der Ansprüche 2 bis 5, dadurch gekennzeichnet, dass die Operationsverstärker paar­ weise als Teil eines doppelten Operationsverstärker­ bausteins realisiert sind.6. Device according to one of claims 2 to 5, characterized characterized that the operational amplifiers pair as part of a double operational amplifier building blocks are realized. 7. Vorrichtung nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die Signalfrequenz auf einen Wert zwischen 0,8 und 3 Hz, insbesondere zwischen 1,1 Hz und 1,9 Hz, eingerichtet ist.7. Device according to one of claims 1 to 6, characterized characterized that the signal frequency to a Value between 0.8 and 3 Hz, especially between 1.1 Hz and 1.9 Hz. 8. Vorrichtung nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass der Detektor eine den Meßkanal sowie den Referenzkanal aufweisende Thermopile- Einheit (10) ist.8. Device according to one of claims 1 to 7, characterized in that the detector is a thermopile unit ( 10 ) having the measuring channel and the reference channel. 9. Vorrichtung nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass die Verstärkervorrichtung Teil einer infrarotoptischen Kohlendioxydmeßeinheit ist.9. Device according to one of claims 1 to 8, characterized characterized in that the amplifier device part an infrared optical carbon dioxide measuring unit. 10. Vorrichtung nach Anspruch 9, dadurch gekennzeichnet, dass die Verstärkervorrichtung zwischen einem Strah­ lungserzeuger und einem Infrarotdetektor der Kohlen­ dioxydmeßeinheit auf einer diese tragenden Leiter­ platteneinheit realisiert ist.10. The device according to claim 9, characterized in that the amplifier device between a beam tion generator and an infrared detector of the coals Dioxide measuring unit on a ladder carrying this plate unit is realized.
DE20119647U 2001-12-04 2001-12-04 Low frequency low level signal amplifier for infrared detector has shared amplifiers Expired - Lifetime DE20119647U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE20119647U DE20119647U1 (en) 2001-12-04 2001-12-04 Low frequency low level signal amplifier for infrared detector has shared amplifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE20119647U DE20119647U1 (en) 2001-12-04 2001-12-04 Low frequency low level signal amplifier for infrared detector has shared amplifiers

Publications (1)

Publication Number Publication Date
DE20119647U1 true DE20119647U1 (en) 2003-04-24

Family

ID=7964747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE20119647U Expired - Lifetime DE20119647U1 (en) 2001-12-04 2001-12-04 Low frequency low level signal amplifier for infrared detector has shared amplifiers

Country Status (1)

Country Link
DE (1) DE20119647U1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103076087A (en) * 2012-12-28 2013-05-01 西北核技术研究所 Mid-infrared photoelectric detector driving circuit, detector assembly and assembly array
CN109580507A (en) * 2018-11-28 2019-04-05 国电南瑞科技股份有限公司 A kind of parallel Quality Control water analysis outfit and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103076087A (en) * 2012-12-28 2013-05-01 西北核技术研究所 Mid-infrared photoelectric detector driving circuit, detector assembly and assembly array
CN103076087B (en) * 2012-12-28 2015-05-27 西北核技术研究所 Mid-infrared photoelectric detector driving circuit, detector assembly and assembly array
CN109580507A (en) * 2018-11-28 2019-04-05 国电南瑞科技股份有限公司 A kind of parallel Quality Control water analysis outfit and method
CN109580507B (en) * 2018-11-28 2021-05-14 国电南瑞科技股份有限公司 Parallel quality control water quality analysis device and method

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20030528

R150 Term of protection extended to 6 years

Effective date: 20050128

R151 Term of protection extended to 8 years

Effective date: 20080304

R152 Term of protection extended to 10 years

Effective date: 20100302

R071 Expiry of right
R071 Expiry of right