DE20010309U1 - Diode laser arrangement - Google Patents

Diode laser arrangement

Info

Publication number
DE20010309U1
DE20010309U1 DE20010309U DE20010309U DE20010309U1 DE 20010309 U1 DE20010309 U1 DE 20010309U1 DE 20010309 U DE20010309 U DE 20010309U DE 20010309 U DE20010309 U DE 20010309U DE 20010309 U1 DE20010309 U1 DE 20010309U1
Authority
DE
Germany
Prior art keywords
arrangement according
laser arrangement
diode laser
diode
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE20010309U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority to DE20010309U priority Critical patent/DE20010309U1/en
Publication of DE20010309U1 publication Critical patent/DE20010309U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/143—Beam splitting or combining systems operating by reflection only using macroscopically faceted or segmented reflective surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/145—Beam splitting or combining systems operating by reflection only having sequential partially reflecting surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßtThe description text was not recorded electronically

Claims (14)

1. Diodenlaseranordnung mit in Stapelform angeord­ neten Diodenlasern (11, 12, 13) sowie einem oder mehreren dichroitischen Strahlumlenkelementen (4, 41, 42, 43, 5, 51, 52, 53) und/oder Polarisations­ strahlteilern (6, 61) zur koaxialen Überlagerung von auf unterschiedlichen Austrittsstrahlachsen von den Diodenlasern (11, 12, 13) emittierter La­ serstrahlung, wobei die dichroitischen Strahlumlenkelemente (4, 41, 42, 43, 5, 51, 52, 53) und/oder Polarisations­ strahlteiler (6, 61) zu einem einzigen Bauteil (3) verbunden sind.1. diode laser arrangement with stacked diode lasers ( 11 , 12 , 13 ) and one or more dichroic beam deflection elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ) and / or polarization beam splitters ( 6 , 61 ) coaxial superposition of laser radiation emitted by the diode lasers ( 11 , 12 , 13 ) on different exit beam axes, the dichroic beam deflection elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ) and / or polarization beam splitters ( 6 , 61 ) are connected to a single component ( 3 ). 2. Diodenlaseranordnung nach Anspruch 1, dadurch gekennzeichnet, dass das Bauteil (3) weiterhin Reflexionselemente (15) zum räumlichen Multiplexen der emittierten oder koaxial überlagerten Laserstrahlung aufweist.2. Diode laser arrangement according to claim 1, characterized in that the component ( 3 ) further comprises reflection elements ( 15 ) for spatial multiplexing of the emitted or coaxially superimposed laser radiation. 3. Diodenlaseranordnung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die dichroitischen Strahlumlenkelemente (4, 41, 42, 43, 5, 51, 52, 53) und/oder Polarisations­ strahlteiler (6, 61) und/oder Reflexionselemente (15) miteinander zu dem Bauteil (3) verkittet sind.3. Diode laser arrangement according to claim 1 or 2, characterized in that the dichroic beam deflection elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ) and / or polarization beam splitter ( 6 , 61 ) and / or reflection elements ( 15 ) are cemented together to form the component ( 3 ). 4. Diodenlaseranordnung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass Reflexionsflächen (41, 42, 43, 51, 52, 53) der dichroitischen Strahlumlenkelemente (4, 41, 42, 43, 5, 51, 52, 53) und/oder Reflexionselemente (15) unter einem Winkel von etwa 45° zu den Aus­ trittsstrahlachsen der Diodenlaser (11, 12, 13) ausgebildet sind, um die Laserstrahlung in Stapel­ richtung umzulenken.4. Diode laser arrangement according to one of claims 1 to 3, characterized in that reflection surfaces ( 41 , 42 , 43 , 51 , 52 , 53 ) of the dichroic beam deflection elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ) and / or reflection elements ( 15 ) are formed at an angle of approximately 45 ° to the exit beam axes of the diode lasers ( 11 , 12 , 13 ) in order to deflect the laser radiation in the stacking direction. 5. Diodenlaseranordnung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die dichroitischen Strahlumlenkelemente (4, 41, 42, 43, 5, 51, 52, 53) durch planparallele Substrate (4, 5) aus einem für die Laserstrahlung transparenten Material mit einer dichroitischen Beschichtung gebildet und entsprechend den Dioden­ lasern (11, 12, 13) übereinander gestapelt sind.5. Diode laser arrangement according to one of claims 1 to 4, characterized in that the dichroic beam deflection elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ) by plane-parallel substrates ( 4 , 5 ) made of a material transparent to the laser radiation formed with a dichroic coating and lasers ( 11 , 12 , 13 ) are stacked one above the other in accordance with the diodes. 6. Diodenlaseranordnung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass der Polarisationsstrahlteiler (6, 61) einen trapeztörmigen Querschnitt aufweist und zwischen dichroitischen Strahlumlenkelementen (4, 41, 42, 43, 5, 51, 52, 53) angeordnet ist.6. Diode laser arrangement according to one of claims 1 to 5, characterized in that the polarization beam splitter ( 6 , 61 ) has a trapezoidal cross section and is arranged between dichroic beam deflection elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ). 7. Diodenlaseranordnung nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass Eintritts- und Austrittsflächen der dichroi­ tischen Strahlumlenkelemente (4, 41, 42, 43, 5, 51, 52, 53) und/oder Polarisationsstrahlteiler (6, 61) und/oder Reflexionselemente (15) mit Antire­ flexbeschichtungen für die ein- und austretende Laserstrahlung versehen sind.7. Diode laser arrangement according to one of claims 1 to 6, characterized in that entry and exit surfaces of the dichroic table deflecting elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ) and / or polarization beam splitter ( 6 , 61 ) and / or reflection elements ( 15 ) are provided with anti-flex coatings for the incoming and outgoing laser radiation. 8. Diodenlaseranordnung nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass der Polarisationsstrahlteiler (6, 61) an ei­ ner zum Stapel der Diodenlaser (11, 12, 13) ge­ richteten Austrittsfläche eine λ/4 Platte (7) 0. Ordnung mit einem Reflexionselement aufweist, um austretende Laserstrahlung mit um 90° gedrehter Polarisation in den Polarisationsstrahlteiler (6, 61) zurück zu reflektieren.8. Diode laser arrangement according to one of claims 1 to 7, characterized in that the polarization beam splitter ( 6 , 61 ) on egg ner to the stack of the diode lasers ( 11 , 12 , 13 ) ge directed exit surface a λ / 4 plate ( 7 ) 0th order with a reflection element in order to reflect emerging laser radiation with polarization rotated through 90 ° back into the polarization beam splitter ( 6 , 61 ). 9. Diodenlaseranordnung nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass 2n Diodenlaser D mit n unterschiedlichen Emissionswellenlängen λ1, . . .λn vorgesehen sind, die in dem Stapel, gegebenenfalls mit Zwischen­ elementen, in der Reihenfolge D(λ1)-. . .-D(λn)- D(λn)-. . . .-D(λ1) übereinander angeordnet sind, wo­ bei n ≧ 2, und wobei zwei Teilstapel von n dichroitischen Strahlumlenkelementen (4, 41, 42, 43, 5, 51, 52, 53), die in der Reihenfolge λ1-. . .- λn-λn-. . .-λ1 für die einzelnen Wellenlängen re­ flektierend sind, über einen Polarisations­ strahlteiler (6, 61) gemäß Anspruch 7 miteinander verbunden sind.9. Diode laser arrangement according to one of claims 1 to 8, characterized in that 2n diode lasers D with n different emission wavelengths λ1,. . .λn are provided, in the stack, possibly with intermediate elements, in the order D (λ1) -. . .-D (λn) - D (λn) -. . . .-D (λ1) are arranged one above the other, where at n ≧ 2, and where two partial stacks of n dichroic beam deflection elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ), which are in the order λ1-. . .- λn-λn-. . .-λ1 are reflective for the individual wavelengths, are connected to one another via a polarization beam splitter ( 6 , 61 ). 10. Diodenlaseranordnung nach Anspruch 9, dadurch gekennzeichnet, dass die Wellenlängen von λ1 bis λn größer oder kleiner werden, wobei die dichroitischen Strahlum­ lenkelemente (4, 41, 42, 43, 5, 51, 52, 53) einen Kantenfilter für die jeweilige zu reflektierende Wellenlänge bilden.10. A diode laser arrangement according to claim 9, characterized in that the wavelengths from λ1 to λn become larger or smaller, the dichroic beam deflecting elements ( 4 , 41 , 42 , 43 , 5 , 51 , 52 , 53 ) having an edge filter for the respective one form reflective wavelength. 11. Diodenlaseranordnung nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass das Bauteil (3) mit dem Stapel verbunden ist.11. Diode laser arrangement according to one of claims 1 to 10, characterized in that the component ( 3 ) is connected to the stack. 12. Diodenlaseranordnung nach einem der Ansprüche 1 bis 11, dadurch gekennzeichnet, dass an auf den Austrittsstrahlachsen der Dioden­ laser (11, 12, 13) vor dem Eintritt in das Bauteil (3) Mikrozylinderlinsen (8, 9) zur Strahlformung angeordnet sind.12. Diode laser arrangement according to one of claims 1 to 11, characterized in that on the exit beam axes of the diode lasers ( 11 , 12 , 13 ) before entering the component ( 3 ) micro-cylindrical lenses ( 8 , 9 ) are arranged for beam shaping. 13. Diodenlaseranordnung nach einem der Ansprüche 1 bis 12, dadurch gekennzeichnet, dass im Bereich der Austrittsfläche der koaxialen Laserstrahlung aus dem Bauteil (3) Treppenspiegel (10) zur Strahlformung vorgesehen sind.13. Diode laser arrangement according to one of claims 1 to 12, characterized in that in the area of the exit surface of the coaxial laser radiation from the component ( 3 ) stair mirrors ( 10 ) are provided for beam shaping. 14. Diodenlaseranordnung nach einem der Ansprüche 1 bis 13, dadurch gekennzeichnet, dass ein Lichtwellenleiter vorgesehen ist, in den die aus dem Bauteil (3) austretende koaxiale La­ serstrahlung nach geeigneter Strahlformung einkop­ pelt.14. Diode laser arrangement according to one of claims 1 to 13, characterized in that an optical waveguide is provided, into which the coaxial laser radiation emerging from the component ( 3 ) is coupled after suitable beam shaping.
DE20010309U 1999-06-14 2000-06-08 Diode laser arrangement Expired - Lifetime DE20010309U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE20010309U DE20010309U1 (en) 1999-06-14 2000-06-08 Diode laser arrangement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE29910263 1999-06-14
DE20010309U DE20010309U1 (en) 1999-06-14 2000-06-08 Diode laser arrangement

Publications (1)

Publication Number Publication Date
DE20010309U1 true DE20010309U1 (en) 2000-09-28

Family

ID=8074711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE20010309U Expired - Lifetime DE20010309U1 (en) 1999-06-14 2000-06-08 Diode laser arrangement

Country Status (1)

Country Link
DE (1) DE20010309U1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004017478A1 (en) * 2002-08-15 2004-02-26 Raytheon Company Miniaturized multi-functional laser assembly
WO2004111702A1 (en) * 2003-06-11 2004-12-23 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
DE102004040107A1 (en) * 2004-08-18 2006-02-23 Arctos Showlasertechnik E.Kfm. Laser device for generating red laser beam e.g. in advertising and animation etc, uses first and second laser part-beam devices
US7006549B2 (en) 2003-06-11 2006-02-28 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
US7010194B2 (en) 2002-10-07 2006-03-07 Coherent, Inc. Method and apparatus for coupling radiation from a stack of diode-laser bars into a single-core optical fiber
EP1953881A1 (en) 2004-08-18 2008-08-06 Arctos Showlasertechnik e.K. Laser device for creating a laser beam
US7515346B2 (en) 2006-07-18 2009-04-07 Coherent, Inc. High power and high brightness diode-laser array for material processing applications
WO2011043984A1 (en) * 2009-10-05 2011-04-14 Daylight Solutions, Inc. High output laser source assembly with precision output beam

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004017478A1 (en) * 2002-08-15 2004-02-26 Raytheon Company Miniaturized multi-functional laser assembly
US7010194B2 (en) 2002-10-07 2006-03-07 Coherent, Inc. Method and apparatus for coupling radiation from a stack of diode-laser bars into a single-core optical fiber
WO2004111702A1 (en) * 2003-06-11 2004-12-23 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
US6993059B2 (en) 2003-06-11 2006-01-31 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
US7006549B2 (en) 2003-06-11 2006-02-28 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
DE102004040107A1 (en) * 2004-08-18 2006-02-23 Arctos Showlasertechnik E.Kfm. Laser device for generating red laser beam e.g. in advertising and animation etc, uses first and second laser part-beam devices
EP1953881A1 (en) 2004-08-18 2008-08-06 Arctos Showlasertechnik e.K. Laser device for creating a laser beam
US7515346B2 (en) 2006-07-18 2009-04-07 Coherent, Inc. High power and high brightness diode-laser array for material processing applications
US7697207B2 (en) 2006-07-18 2010-04-13 Coherent, Inc. High power and high brightness diode-laser array for material processing applications
WO2011043984A1 (en) * 2009-10-05 2011-04-14 Daylight Solutions, Inc. High output laser source assembly with precision output beam

Similar Documents

Publication Publication Date Title
DE69731148T2 (en) Solid-state laser amplifier
DE2418994C2 (en) Waveguide structure with thin film filter and process for their production
DE19511593C2 (en) Micro-optical device
DE60006261T2 (en) ASYMMETRIC REFLECTION ASSEMBLY FOR THE ADDITION OF HIGH-PERFORMANCE LASER RADIATORS
DE3413703A1 (en) OPTICAL MULTIPLEXER / DEMULTIPLEXER
DE2751183A1 (en) OPTICAL COUPLING DEVICE
DE19617921A1 (en) Integrated optical module with waveguide and photo receiver
DE4042296A1 (en) BEAM DIVIDERS FOR GENERATING A MULTIPLE OF SHARED LIGHT BEAMS FOR EACH WAVELENGTH COMPONENT OF AN INCIDENT LIGHT BEAM
DE60114124T2 (en) WAVELENGTH COMPENSATED OPTICAL WAVELENGTH MULTIPLEX COUPLER AND ASSOCIATED METHODS
DE4211899C2 (en) Microsystem laser arrangement and microsystem laser
DE20010309U1 (en) Diode laser arrangement
DE3502382A1 (en) Arrangement for the beam splitting of a laser beam
DE60026771T2 (en) Optical element for controlling the beam separation of several beams
DE4015447C1 (en) Laser power meter - uses polarisation-sensitive semi-transparent mirrors as beam splitter and reflector for diversion of beam
EP0146957A2 (en) Optical multiplexer/demultiplexer
WO2008119423A1 (en) Laser module for projectors
DE10031414A1 (en) Light combining device using polarization characteristics has linearly polarized beams incident on surfaces of plane-parallel plate
EP1116982A2 (en) Beam splitter
DE1912283A1 (en) Method and arrangement for amplifying laser pulses
DE19628233C1 (en) Frequency summing continuous wave solid state laser using two laser materials
DE4041047C2 (en)
DE2445775A1 (en) POLARIZER
DE3413704A1 (en) Optical power divider
EP3652570A1 (en) Polariser arrangement and euv radiation generating device comprising a polariser arrangement
EP3707552B1 (en) Method and device for coupling out a partial beam having a very small beam percentage from an optical beam

Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20001102

R150 Term of protection extended to 6 years

Effective date: 20030926

R151 Term of protection extended to 8 years

Effective date: 20060907

R152 Term of protection extended to 10 years

Effective date: 20080909

R071 Expiry of right