DE19914583A1 - Lithography device for production of semiconductor or micro- mechanical structures generates a mash for illuminating a photosensitive circuit by creation of a bitmap using software, which bitmap can then be illuminated with UV light - Google Patents

Lithography device for production of semiconductor or micro- mechanical structures generates a mash for illuminating a photosensitive circuit by creation of a bitmap using software, which bitmap can then be illuminated with UV light

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Publication number
DE19914583A1
DE19914583A1 DE1999114583 DE19914583A DE19914583A1 DE 19914583 A1 DE19914583 A1 DE 19914583A1 DE 1999114583 DE1999114583 DE 1999114583 DE 19914583 A DE19914583 A DE 19914583A DE 19914583 A1 DE19914583 A1 DE 19914583A1
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DE
Germany
Prior art keywords
bitmap
production
illuminated
uv light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE1999114583
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German (de)
Original Assignee
Kaiser Michael
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaiser Michael filed Critical Kaiser Michael
Priority to DE1999114583 priority Critical patent/DE19914583A1/en
Publication of DE19914583A1 publication Critical patent/DE19914583A1/en
Application status is Withdrawn legal-status Critical

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece

Abstract

System in which an exposure layout is produced virtually and a virtual reticule or transparent mask is made using a software pattern or bitmap of pixels where the gray values are any of 256 values. After production of a pixel map it is portrayed as an LCD panel which is then illuminated using UV light so that a photosensitive surface is exposed. This surface is then etched in a conventional way.

Description

Bei dem vorgestellten Gerät handelt es sich um ein hochflexibles und sehr schnelles Belichtungssystem zum Übertragen eines beliebigen Layouts (s/w oder Graumuster) auf eine fotoempfindliche Schicht. In the presented device is a highly flexible and very fast exposure system for transmitting an arbitrary layout (s / w or gray pattern) onto a photosensitive layer.

Der Einsatzbereich des Gerätes ist breit, beispielsweise in der Halbleiter- und Mikrosystembranche zum Belichten von Kleinserien oder Prototypen sowie in der Platinenbelichtung. The operating range of the device is wide, for example, in the semiconductor and microsystems industry for exposing small series or prototypes as well as in the platinum exposure.

In der Mikrosystem- oder Halbleitertechnik werden Layouts bisher in einem sehr aufwendigen und teueren Verfahren mittels Elektronenstrahlschreibern auf Chrommasken (Transparentmasken) übertragen. In the microsystem or semiconductor technology layouts previously in a very complex and expensive method by means of electron beam writers chromium masks (Transparent masks) transmitted. Diese Masken werden dann, zum Teil verkleinert, auf Siliziumwafer projiziert und das Layout in eine vorher aufgebrachte fotoempfindliche Schicht übertragen. These masks are then scaled in part projected onto silicon wafers and transfer the layout in a previously applied photosensitive layer.

Durch den aufwendigen und teueren Prozeß der Maskenherstellung ist das Verfahren sehr unflexibel. Due to the complex and expensive process of mask making, the process is very inflexible. Eventuelle Fehler werden erst spät sichtbar und machen dann Design und Herstellung einer neuen Maske notwendig. Any errors are visible only late and then make design and manufacture of a new mask needed. Dadurch ist das Verfahren zur Entwicklung von Prototypen oder für kleine Serien ungeeignet. This makes the process for developing prototypes or small series is not suitable.

Bei dem vorgestellten neuen Verfahren werden die Layoutdaten auf einem PC mit einer beliebigen Layout-Software erzeugt, in ein s/w-Muster (Bitmap) umgesetzt und von einem LCD-Durchlichtpanel dargestellt. In the presented method, the new layout data is generated on a PC with an arbitrary layout software is converted into a black / white pattern (bit map) and displayed by a transmissive LCD panel. Der gesamte Prozeß der Maskenherstellung entfällt. The whole process of mask making unnecessary. Das "Bild" wird mit einer Optik verkleinert und auf die fotoempfindliche Schicht belichtet. The "image" is reduced with an optical system and exposed onto the photosensitive layer.

Die aktive Fläche der erwähnten LCD-Panels besteht aus einer Matrix von ca. 800 × 600 quadratischen Punkten, die in 256 Abstufungen von transparent bis lichtundurchlässig wechseln können. The active area of ​​said LCD panel consists of a matrix of 800 × 600 square points that can switch from transparent to opaque in 256 gradations. Aus den Punkten dieser Matrix wird das gewünschte Bild zusammengesetzt. From the points of this matrix the desired image is assembled. Das erzeugte Bild wird von einer Lichtquelle durchstrahlt und von einer Optik im gewünschten Verhältnis verkleinert abgebildet. The generated image is irradiated from a light source and imaged by an optical system decreases the desired ratio. Für Strukturen im µm-Bereich muß die Wellenlänge im nahen UV-Bereich z. For structures in the micron range, the wavelength in the near UV range z must. B. 436 nm, 405 nm, 380 nm oder darunter liegen. B. 436 nm, 405 nm, 380 nm or less. Mit diesen Wellenlängen lassen sich kleinste Strukturen von etwa 2*λ, also 0.8 µm bis 0.9 µm erzeugen. With these wavelengths is very small structures of approximately 2 * λ, that is 0.8 microns to 0.9 microns can be produced. Im UV-Bereich sinkt allerdings die Transparenz der LCD-Panels. In the UV range, however, the transparency of the LCD panel decreases. Sie liegt bei 430 nm etwa 50% niedriger als bei höheren Wellenlängen ab ca. 530 nm. It is located at 430 nm is about 50% lower than at higher wavelengths from about 530 nm.

Durch die Möglichkeit, Graustufen zu belichten, ist das Verfahren geeignet für die integrierte Optik. By being able to expose gray levels, the method is suitable for integrated optics. Hier werden Graustufen in Lackdicken umgesetzt, was bei einem anschließenden Ätzprozess unterschiedliche Ätztiefen ergibt und zur Herstellung von 3-dimensionalen. Here, gray levels are implemented in coating thickness, which results in different etching depths in a subsequent etching process, and 3-dimensional for the production of. Strukturen benutzt wird. Structures used.

Die angestrebte Reduzierung der Bildgröße durch eine Optik liegt im Bereich 10 : 1 bis 50 : 1. Bei einer Bildgröße, die die gesamte aktive Fläche des LCD-Panels (26.6 mm × 20 mm) ausnutzt, und einer 10 : 1- Reduktionsoptik entsteht damit auf der Fotoschicht ein Bild von 2.66 mm × 2 mm Kantenlänge mit einer Auflösung von 800 × 600 quadratischen, fast nahtlos aneinandergefügten Bildpunkten. The intended reduction of image size by an optical system is in the range 10: 1 to 50: 1. In an image size (26.6 mm x 20 mm) to exploit the entire active area of ​​the LCD panel, and a 10: 1 reduction optical system is formed so that on the photo layer, an image of 2.66 mm × 2 mm edge length with a resolution of 800 × 600 square, almost seamlessly abutted pixels. Die einzelnen abgebildeten Bildpunkte haben dann eine Kantenlänge von 3.33 µm. The individual pixels shown then have an edge length of 3:33 microns. Um größere Layouts aus einzelnen Belichtungen zusammensetzen zu können, wird die fotoempfindliche Schicht im Raster von 2.66 mm × 2 mm verschoben. To assemble larger layouts of individual exposures, the photosensitive layer is moved 2 mm in steps of 2.66 mm ×. Die Auflösung des dazu verwendeten Verschiebetisches muß ca. 10- bis 20-fach höher als die kleinste erzeugte Struktur sein, damit der Versatz unter der von der Optik vorgegebenen Auflösungsgrenze liegt. The resolution of the displacement table used for this purpose must be approximately 10- to 20-fold higher than the smallest structure produced, so that the offset is below the predefined by the optical resolution limit. Daraus ergibt sich eine reproduzierbare Positioniergenauigkeit des Tisches von etwa 0.1 µm. This results in a reproducible positioning of the table of about 0.1 microns. Diese Genauigkeit wird von handelsüblichen Positioniertischen erreicht. This accuracy is achieved by conventional positioning tables.

Es ist auch problemlos möglich, nur das LCD-Display mit Ansteuerung in bestehende Belichtungsanlagen, sog. Stepper, einzusetzen. It is also no problem, only the LCD display with control in existing exposure systems, so-called. Stepper use. Solche Anlagen werden in der Halbleiterindustrie verwendet und bilden eingelegte Transparentmasken (Reticle) in einem bestimmten Verhältnis (Reduktion) ab. Such plants are used in the semiconductor industry to form inlaid transparent mask (reticle) in a certain ratio (reduction) from. Anstelle einer solchen (teuer und aufwendig produzierten) Transparentmaske wird ein LCD-Display eingesetzt. Instead of such (expensive and elaborately produced) Transparent mask an LCD display is used. Es stellt dann ein "virtuelles Reticle" dar. It then provides a "virtual reticle" is.

Für Anlagen zur Platinenbelichtung und andere Anwendungen, die geringere Anforderungen an die Auflösung steilen, genügt es, Verschiebetische mit einfachen, preiswerten Schrittmotoren zu verwenden. For plants for platinum exposure and other applications, the steep lower resolution requirements, it is sufficient to use sliding tables with simple, inexpensive stepper motors.

Claims (3)

1. µ-Writer: hochflexibles und schnelles Belichtungssystem, dadurch gekennzeichnet , daß das Belichtungslayout "virtuell" erzeugt wird. 1. μ-Writer: highly flexible and fast exposure system, characterized in that the exposure layout is generated "virtual".
2. µ-Writer "virtuelles Reticle" dadurch gekennzeichnet, daß das virtuelle Reticle (Transparentmaske) in schon vorhandene Anlagen anstelle eines konventionellen Reticles eingebaut werden kann. 2. μ-Writer "virtual reticle" characterized in that the virtual reticle (transparent mask) may be installed in already existing equipment in place of a conventional reticles.
3. µ-Writer geeignet zur Herstellung sog. "Integrierter Optik", da das Verfahren die Belichtung von Graustufen ermöglicht. 3 μ-Writer so-called suitable for the production. "Integrated Optics", since the method enables the exposure of gray levels.
DE1999114583 1999-03-31 1999-03-31 Lithography device for production of semiconductor or micro- mechanical structures generates a mash for illuminating a photosensitive circuit by creation of a bitmap using software, which bitmap can then be illuminated with UV light Withdrawn DE19914583A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1999114583 DE19914583A1 (en) 1999-03-31 1999-03-31 Lithography device for production of semiconductor or micro- mechanical structures generates a mash for illuminating a photosensitive circuit by creation of a bitmap using software, which bitmap can then be illuminated with UV light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1999114583 DE19914583A1 (en) 1999-03-31 1999-03-31 Lithography device for production of semiconductor or micro- mechanical structures generates a mash for illuminating a photosensitive circuit by creation of a bitmap using software, which bitmap can then be illuminated with UV light

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DE19914583A1 true DE19914583A1 (en) 2000-10-05

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1628157A1 (en) * 2004-08-17 2006-02-22 ASML Netherlands B.V. Lithographic apparatus, method and a computer program product for generating a mask pattern on an addressable mask and device manufacturing method using same
US7713667B2 (en) 2004-11-30 2010-05-11 Asml Holding N.V. System and method for generating pattern data used to control a pattern generator

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171490A (en) * 1988-11-29 1992-12-15 Fudim Efrem V Method and apparatus for production of three-dimensional objects by irradiation of photopolymers
US5344748A (en) * 1986-01-13 1994-09-06 Rohm And Haas Company Microplastic structure and method of manufacture
US5558884A (en) * 1989-04-03 1996-09-24 Omnichrome Corporation System for rapidly producing either integrated circuits on a substrate, Interconnections on a printed circuit board or rapidly performing lithography
WO1997045770A1 (en) * 1996-05-29 1997-12-04 Chiu Tzu Yin Reconfigurable mask
US5742362A (en) * 1993-03-21 1998-04-21 Nec Corporation Process for forming a photosensitive material and an exposure apparatus used for the process
DE19522936C2 (en) * 1995-06-23 1999-01-07 Fraunhofer Ges Forschung A device for structuring a photolithographic layer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344748A (en) * 1986-01-13 1994-09-06 Rohm And Haas Company Microplastic structure and method of manufacture
US5171490A (en) * 1988-11-29 1992-12-15 Fudim Efrem V Method and apparatus for production of three-dimensional objects by irradiation of photopolymers
US5558884A (en) * 1989-04-03 1996-09-24 Omnichrome Corporation System for rapidly producing either integrated circuits on a substrate, Interconnections on a printed circuit board or rapidly performing lithography
US5742362A (en) * 1993-03-21 1998-04-21 Nec Corporation Process for forming a photosensitive material and an exposure apparatus used for the process
DE19522936C2 (en) * 1995-06-23 1999-01-07 Fraunhofer Ges Forschung A device for structuring a photolithographic layer
WO1997045770A1 (en) * 1996-05-29 1997-12-04 Chiu Tzu Yin Reconfigurable mask

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1628157A1 (en) * 2004-08-17 2006-02-22 ASML Netherlands B.V. Lithographic apparatus, method and a computer program product for generating a mask pattern on an addressable mask and device manufacturing method using same
JP2006058882A (en) * 2004-08-17 2006-03-02 Asml Netherlands Bv Lithography device and method for generating mask and pattern, computer program product and device manufacturing method using the same
US7500218B2 (en) 2004-08-17 2009-03-03 Asml Netherlands B.V. Lithographic apparatus, method, and computer program product for generating a mask pattern and device manufacturing method using same
JP2011095755A (en) * 2004-08-17 2011-05-12 Asml Netherlands Bv Lithographic apparatus, method, and computer program product for generating mask pattern, and method of manufacturing device using the same
US7713667B2 (en) 2004-11-30 2010-05-11 Asml Holding N.V. System and method for generating pattern data used to control a pattern generator

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