DE19849919A1 - Active semiconductor module - Google Patents

Active semiconductor module

Info

Publication number
DE19849919A1
DE19849919A1 DE1998149919 DE19849919A DE19849919A1 DE 19849919 A1 DE19849919 A1 DE 19849919A1 DE 1998149919 DE1998149919 DE 1998149919 DE 19849919 A DE19849919 A DE 19849919A DE 19849919 A1 DE19849919 A1 DE 19849919A1
Authority
DE
Grant status
Application
Patent type
Prior art keywords
semiconductor module
base plate
module
ceramic substrate
active semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE1998149919
Other languages
German (de)
Inventor
Heiko Dr Deumer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Duewag Schienenfahrzeuge GmbH
Original Assignee
DUEWAG AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427Cooling by change of state, e.g. use of heat pipes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The module has at least one semiconductor module (1). This is fastened to a metallised, electrically insulating ceramic substrate (2). The module also has a base plate (3) which has at least one heat pipe (4). The ceramic substrate is soldered directly onto the base plate.

Description

Die Erfindung bezieht sich auf ein Leistungshalbleiter modul mit mindestens einem Halbleiterbauelement, das auf einem metallisierten, elektrisch isolierenden Keramik substrat befestigt ist, und mit einer Basisplatte, die zumindest ein Wärmerohr aufweist. The invention relates to a power semiconductor module with at least one semiconductor component which is fixed on a substrate metallized, electrically insulating ceramic, and a base plate which has at least one heat pipe.

Die im Halbleiterbauelement entstehende Verlustwärme begrenzt in der Regel die elektrischen Parameter, insbe sondere die Schaltfrequenz. The resulting in the semiconductor device heat losses limits the electrical parameters in general, in particular sondere the switching frequency. Vor allem in Anbetracht der mit modernen Halbleiterbauelementen erreichbaren Lei stungsdichten werden Technologien zur Kühlung realisiert, die insbesondere auf dem Einsatz von Wärmerohren (heat pipes) beruhen. be stungsdichten especially in light of achievable with modern semiconductor devices Lei technologies implemented for cooling, in particular on the use of heat pipes (heat pipes) are based.

Bei einem zum Stand der Technik gehörenden Leistungs halbleitermodul mit den eingangs genannten Gattungsmerk malen ist das mit dem Halbleiterbauelement versehene Keramiksubstrat durch Löten mit einer Trägerplatte (Zwischen-Basisplatte) verbunden, die ihrerseits über Schrauben an der das Wärmerohr aufweisenden Basisplatte des gesamten Kühlkörpers befestigt ist. painting at a belonging to the prior art power semiconductor module with the above-mentioned type watch is connected by soldering to a carrier plate (intermediate base plate) with the semiconductor device provided ceramic substrate, which is in turn secured by screws at which the heat pipe having base plate of the total heat sink. Bei dieser Bauweise wird als nachteilig angesehen, daß die Träger platte und die Basisplatte zum Erzeugen der erforder lichen ebenen Kontaktflächen mechanisch bearbeitet werden müssen; In this construction is regarded as disadvantageous that the supporting plate and the base plate must be machined to produce the union erforder flat contact surfaces; zusätzlich ist es notwendig, zwischen den Kon taktflächen der beiden vorgenannten Platten Wärmeleitpa ste einzusetzen. in addition, it is necessary between the con tact surfaces of the two aforementioned plates Wärmeleitpa ste use.

Durch die DE-OS 35 04 992 ist ein Leistungshalbleitermo dul mit zumindest einem Wärmerohr bekannt, das auf der dem Halbleiterbauelement zugewandten Seite im Substrat integriert ist. DE-OS 35 04 992 is Leistungshalbleitermo dul known with at least one heat pipe which is integrated on the side facing the semiconductor device side in the substrate. Die Nachteile eines solchen Moduls liegen in dem erheblichen Fertigungsaufwand und der begrenzten Wärmeabfuhr. The disadvantages of such a module are in the considerable manufacturing costs and the limited heat dissipation.

Der Erfindung liegt die Aufgabe zugrunde, ein Leistungs halbleitermodul im Hinblick auf eine möglichst hohe Verlustleistungsabfuhr und eine einfache, kostengünstige Fertigung auszubilden. The invention is based on the object of a power semiconductor module with respect to the highest possible power loss dissipation and form a simple, cost-effective production.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß das Keramiksubstrat direkt auf die Basisplatte gelötet ist. This object is inventively achieved in that the ceramic substrate is directly soldered to the base plate.

Das direkte Auflöten des Keramiksubstrats auf die Basis platte ermöglicht vorteilhaft die Anwendung von Stan dardbauteilen und damit eine besonders kostengünstige Fertigung des Leistungshalbleitermoduls. The direct soldering of the ceramic substrate to the base plate advantageously allows the application of Stan dardbauteilen and therefore a particularly inexpensive manufacture of the power semiconductor module. Durch das besagte direkte Auflöten, bei dem eine früher übliche Trägerplatte (Zwischen-Basisplatte) entfällt, verringert sich außerdem günstig der thermische Übergangswiderstand innerhalb des Moduls, so daß eine höhere, forcierte Abfuhr von Verlustleistung erreicht wird. By said direct soldering, in which a previously common carrier plate deleted (intermediate base plate), also decreases the low thermal resistance within the module, so that a higher, forced removal of power loss is achieved.

Gemäß dem in der Zeichnung schematisch und als Ausschnitt dargestellten Ausführungsbeispiel eines Leistungshalb leitermoduls nach der Erfindung ist ein Leistungshalb leiter-Bauelement 1 durch Löten (Lotschicht 5 ) mit einem elektrisch isolierenden Keramiksubstrat 2 verbunden, das auf jeder Seite eine Kupferschicht 6 aufweist. According to the illustrated schematically and as a detail in the drawings embodiment of a power semiconductor module according to the invention is connected with an electrically insulating ceramic substrate 2, a power semiconductor component 1 by soldering (solder layer 5) having on each side a layer of copper. 6 Die Kupferschichten 6 können zum besseren Löten vernickelt sein. The copper layers 6 may be plated for better soldering. Um die thermische Ausdehnung zu begrenzen, besteht die Möglichkeit, hier nicht gezeigte Molybdänzwischen scheiben einzusetzen, die allerdings nicht zwingend sind. In order to limit the thermal expansion, it is possible not shown here molybdenum intermediate discs use which are not mandatory, however. Die Dicke des Keramiksubstrats 2 kann den geforderten elektrischen Parametern frei angepaßt werden, beispiels weise zum Erzielen sehr hoher Isolationswerte des Halb leiterbauelements 1 gegenüber dem Bezugspotential einer Basisplatte 3 . The thickness of the ceramic substrate 2 may be adapted to the required electrical parameters, dates, as example for achieving a very high isolation values of the semiconductor device 1 relative to the reference potential of a base plate. 3

Das Keramiksubstrat 2 ist über seine untere Kupferschicht 6 direkt auf die Basisplatte 3 gelötet (Lotschicht 7 ), in die ein Wärmerohr 4 eingelassen ist. The ceramic substrate 2 is directly above its lower copper layer 6 on the base plate 3 is soldered (solder layer 7), into which a heat pipe is embedded. 4 Es können Wärmerohre 4 mit oder ohne Kapillarstruktur verwendet werden. It can be used with or without 4 capillary heat pipes. Die Anzahl der Wärmerohre 4 sowie deren Größe und die Anzahl der Kühlrippen sind dem jeweiligen Anwendungsfall ent sprechend auszuwählen. The number of the heat pipes 4 and their size and number of the cooling fins are to be selected accordingly to the respective application. Nach dem Auflöten des Keramiksub strats 2 werden die Wärmerohre 4 mit einer für den Anwendungsfall geeigneten Flüssigkeit gefüllt und mittels üblicher Technologien verschlossen. After the soldering of the Keramiksub strats 2, the heat pipes 4 are filled with a suitable liquid for the application case and sealed by means of conventional technologies.

Bezugszeichenliste LIST OF REFERENCE NUMBERS

1 1

Leistungshalbleiter-Bauelement Power semiconductor component

2 2

Keramiksubstrat ceramic substrate

3 3

Basisplatte baseplate

4 4

Wärmerohr heat pipe

5 5

Lotschicht solder layer

6 6

Kupferschicht copper layer

7 7

Lotschicht solder layer

Claims (1)

  1. Leistungshalbleitermodul mit mindestens einem Halblei terbauelement ( 1 ), das auf einem metallisierten, elek trisch isolierenden Keramiksubstrat ( 2 ) befestigt ist, und mit einer Basisplatte ( 3 ), die zumindest ein Wärme rohr ( 4 ) aufweist, dadurch gekennzeichnet, daß das Keramiksubstrat ( 2 ) direkt auf die Basisplatte ( 3 ) gelötet ist. The power semiconductor module with at least one semiconducting terbauelement (1) which is mounted on a metallized elec trically insulating ceramic substrate (2), and with a base plate (3) having at least one heat pipe (4), characterized in that the ceramic substrate ( 2) directly onto the base plate (3) is soldered.
DE1998149919 1997-11-07 1998-10-29 Active semiconductor module Withdrawn DE19849919A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE1997219778 DE29719778U1 (en) 1997-11-07 1997-11-07 The power semiconductor module
DE1998149919 DE19849919A1 (en) 1997-11-07 1998-10-29 Active semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1998149919 DE19849919A1 (en) 1997-11-07 1998-10-29 Active semiconductor module

Publications (1)

Publication Number Publication Date
DE19849919A1 true true DE19849919A1 (en) 1999-05-12

Family

ID=8048308

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1997219778 Expired - Lifetime DE29719778U1 (en) 1997-11-07 1997-11-07 The power semiconductor module
DE1998149919 Withdrawn DE19849919A1 (en) 1997-11-07 1998-10-29 Active semiconductor module

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1997219778 Expired - Lifetime DE29719778U1 (en) 1997-11-07 1997-11-07 The power semiconductor module

Country Status (1)

Country Link
DE (2) DE29719778U1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001003484A1 (en) * 1999-07-01 2001-01-11 Nokia Corporation Method of installing heat source, and micro heat pipe module
DE10137748A1 (en) * 2001-08-01 2003-02-13 Conti Temic Microelectronic Cooling system for heat-generating semiconductor component e.g. for vehicle brake control system, has hollow heat pipe extending between component and heat sink body
US6981322B2 (en) 1999-06-08 2006-01-03 Thermotek, Inc. Cooling apparatus having low profile extrusion and method of manufacture therefor
US6988315B2 (en) 1998-06-08 2006-01-24 Thermotek, Inc. Cooling apparatus having low profile extrusion and method of manufacture therefor
US7150312B2 (en) 2001-11-27 2006-12-19 Thermotek, Inc. Stacked low profile cooling system and method for making same
US7857037B2 (en) 2001-11-27 2010-12-28 Thermotek, Inc. Geometrically reoriented low-profile phase plane heat pipes
US9113577B2 (en) 2001-11-27 2015-08-18 Thermotek, Inc. Method and system for automotive battery cooling

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7686069B2 (en) 1998-06-08 2010-03-30 Thermotek, Inc. Cooling apparatus having low profile extrusion and method of manufacture therefor
US8418478B2 (en) 1998-06-08 2013-04-16 Thermotek, Inc. Cooling apparatus having low profile extrusion and method of manufacture therefor
US6988315B2 (en) 1998-06-08 2006-01-24 Thermotek, Inc. Cooling apparatus having low profile extrusion and method of manufacture therefor
US7802436B2 (en) 1998-06-08 2010-09-28 Thermotek, Inc. Cooling apparatus having low profile extrusion and method of manufacture therefor
US7322400B2 (en) 1998-06-08 2008-01-29 Thermotek, Inc. Cooling apparatus having low profile extrusion
US6981322B2 (en) 1999-06-08 2006-01-03 Thermotek, Inc. Cooling apparatus having low profile extrusion and method of manufacture therefor
WO2001003484A1 (en) * 1999-07-01 2001-01-11 Nokia Corporation Method of installing heat source, and micro heat pipe module
DE10137748A1 (en) * 2001-08-01 2003-02-13 Conti Temic Microelectronic Cooling system for heat-generating semiconductor component e.g. for vehicle brake control system, has hollow heat pipe extending between component and heat sink body
US7150312B2 (en) 2001-11-27 2006-12-19 Thermotek, Inc. Stacked low profile cooling system and method for making same
US7857037B2 (en) 2001-11-27 2010-12-28 Thermotek, Inc. Geometrically reoriented low-profile phase plane heat pipes
US8621875B2 (en) 2001-11-27 2014-01-07 Thermotek, Inc. Method of removing heat utilizing geometrically reoriented low-profile phase plane heat pipes
US9113577B2 (en) 2001-11-27 2015-08-18 Thermotek, Inc. Method and system for automotive battery cooling
US9877409B2 (en) 2001-11-27 2018-01-23 Thermotek, Inc. Method for automotive battery cooling

Also Published As

Publication number Publication date Type
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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8105 Search report available
8127 New person/name/address of the applicant

Owner name: SIEMENS DUEWAG SCHIENENFAHRZEUGE GMBH, 47829 KREFE

8127 New person/name/address of the applicant

Owner name: SIEMENS AG, 80333 MUENCHEN, DE

8110 Request for examination paragraph 44
8130 Withdrawal