DE19810060B4 - A method of connecting a device to a substrate and an electrical circuit made therewith - Google Patents
A method of connecting a device to a substrate and an electrical circuit made therewith Download PDFInfo
- Publication number
- DE19810060B4 DE19810060B4 DE19810060A DE19810060A DE19810060B4 DE 19810060 B4 DE19810060 B4 DE 19810060B4 DE 19810060 A DE19810060 A DE 19810060A DE 19810060 A DE19810060 A DE 19810060A DE 19810060 B4 DE19810060 B4 DE 19810060B4
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- component
- opening
- main surface
- underfiller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000004888 barrier function Effects 0.000 claims abstract description 43
- 229910000679 solder Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 239000000835 fiber Substances 0.000 claims description 8
- 239000012459 cleaning agent Substances 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000007664 blowing Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/4232—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using the surface tension of fluid solder to align the elements, e.g. solder bump techniques
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26122—Auxiliary members for layer connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8121—Applying energy for connecting using a reflow oven
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- H01L2224/818—Bonding techniques
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83051—Forming additional members, e.g. dam structures
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- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Verfahren
zur Verbindung eines Bauelements (100) mit einem Substrat (102),
mit folgenden Schritten:
a) Bereitstellen des Substrats (102),
das eine Öffnung (104)
aufweist, die sich von einer ersten Hauptoberfläche des Substrats (106) zu
einer zweiten Hauptoberfläche
des Substrats (108) erstreckt;
b) Vorsehen einer Barriere (136,
136a, 142, 164) zwischen dem Bauele ment (100) und dem Substrat
(102) benachbart zu einem Rand (138) der Öffnung (104);
c) Verbinden
des Bauelements (100) und des Substrats (102) mittels eines Lotmaterials
(110), derart, daß das
Bauelement (100) über
der Öffnung
(104) in dem Substrat (102) angeordnet ist, so daß sich zwischen
dem Bauelement (100) und dem Substrat (102) ein Zwischenraum (112)
einstellt; und
d) Einbringen eines Unterfüllers (124) in den Zwischenraum
(112) zwischen dem Bauelement (100) unddem Substrat (102) von der
ersten Hauptoberfläche
(106) des Substrats (102) aus,
wobei ein durch die Barriere
(136, 136a, 136b, 142, 164) begrenzter...Method for connecting a component (100) to a substrate (102), comprising the following steps:
a) providing the substrate (102) having an opening (104) extending from a first major surface of the substrate (106) to a second major surface of the substrate (108);
b) providing a barrier (136, 136a, 142, 164) between the component (100) and the substrate (102) adjacent to an edge (138) of the opening (104);
c) connecting the device (100) and the substrate (102) by means of a solder material (110), such that the device (100) is arranged above the opening (104) in the substrate (102), so that between the device (100) and the substrate (102) adjusts a gap (112); and
d) introducing an underfiller (124) into the gap (112) between the device (100) and the substrate (102) from the first major surface (106) of the substrate (102),
wherein a barrier bounded by the barrier (136, 136a, 136b, 142, 164) ...
Description
Die vorliegende Erfindung bezieht sich auf ein Verfahren zur Verbindung eines Bauelements mit einem Substrat und auf eine elektrische Schaltung, die unter Verwendung dieses Verfahrens erzeugt wurde. Insbesondere bezieht sich die Erfindung auf ein Verfahren zur Verbindung eines Bauelements mit einem Substrat in Flip-Chip-Technologie.The The present invention relates to a method of connection a device having a substrate and an electrical circuit, the was generated using this method. In particular, refers The invention relates to a method for connecting a component with a substrate in flip-chip technology.
Bei der bekannten Flip-Chip-Technologie werden die Chips bzw. Bauelemente mit der aktiven Seite nach unten auf einem Substrat angebracht. Zur Erhöhung der Zuverlässigkeit wird ein Unterfüller bzw. Underfiller in den Spalt zwischen dem Bauelement und dem Substrat eingebracht, wobei das hierfür verwendete Epoxid-Harz direkt an dem Rand des Bauelements abgesetzt oder "dispenst" wird, und dasselbe infolge der Kapillarkräfte unter den Spalt fließt, bis dieser komplett gefüllt ist.at The known flip-chip technology, the chips or components with the active side down on a substrate. To increase the reliability becomes a subfiller or Underfiller in the gap between the device and the substrate introduced, with the purpose used epoxy resin deposited directly on the edge of the device or "dispenst," and the same due to capillary forces flowing under the gap, until completely filled is.
Ein Nachteil dieser Technologie besteht darin, daß Gassensoren, Feuchtesensoren und Sensoren, die eine direkte atmosphärische Einwirkung für ihre Funktion benötigen, nicht in Flip-Chip-Technologie unter Verwendung eines Unterfüllers eingesetzt werden können. Diese werden ohne Unterfüller direkt auf das Substrat, z. B. ein Siliziumsubstrat, gesetzt, oder in konventioneller Drahtbondtechnik mit der aktiven Seite nach oben angebracht.One Disadvantage of this technology is that gas sensors, humidity sensors and sensors that have a direct atmospheric impact for their function need, can not be used in flip-chip technology using an underfiller can. These will be without underfillers directly onto the substrate, e.g. As a silicon substrate, set, or in conventional wire bonding technique with the active side up appropriate.
Ein weiterer Nachteil dieser Technologie besteht darin, daß bei der Reinigung des Spalts zwischen dem Bauelement und dem Substrat mittels eines Reinigungsmittels die Reinigung unvollständig ist, da der Spalt zu eng ist, und daher lediglich ein ungenügender Durchfluß von Reinigungsmittel er folgt. Dies gilt ebenso für das Trockenblasen nach der Reinigung.One Another disadvantage of this technology is that in the Cleaning the gap between the device and the substrate by means cleaning is incomplete because the gap is too narrow is, and therefore only an insufficient flow of detergent he follows. This also applies to Dry-blowing after cleaning.
Wiederum ein weiterer Nachteil dieser Technologie besteht darin, daß beim Absetzen oder "Dispensen" des Unterfüllers an den Rand des Bauelements und beim Eindringen des Unterfüllers in den Spalt durch Kapillarkräfte das Fließen des Unterfüllers sehr viel Zeit in Anspruch nimmt, und somit die Prozeßzeit verlängert wird.In turn Another disadvantage of this technology is that when weaning or "Dispensen" of the underfiller the edge of the component and the ingress of the underfiller in the gap by capillary forces the flow of the underfiller takes a lot of time, and thus the process time is extended.
Ein anderer Nachteil der bekannten Flip-Chip-Technologie besteht darin, daß Lufteinschlüsse durch unterschiedlich schnelles Fließen des Unterfüllers oder aufgrund des Absetzens des Unterfüllers an allen Chipkanten, so daß die Luft, die sich unter dem Chip befindet, unter Umständen nicht mehr vollständig entweichen kann, entstehen können.One Another disadvantage of the known flip-chip technology is that that air bubbles through different fast flow of the underfiller or due to settling of the underfill at all chip edges, So that the Air that is under the chip may not work anymore Completely can escape, can arise.
Die
Die
Die WO 93/15521 A1 offenbart ein Verfahren zum Verbinden eines Massekontakts eines Halbleiterbauelements mit einem Massekontakt eines Substrats, wobei das Halbleiterbauelement mit der aktiven Fläche nach unten und dem Massekontakt nach oben über dem Substrat mit Lötperlen und einem Unterfüller, der über ein Loch in dem Substrat eingespritzt wird, befestigt ist. Die Verbindung zwischen dem Massekontakt des Halbleiterbauelements und dem Massekontakt des Substrats wird dabei über ein leitfähiges Material, das die Gesamtanordnung überdeckt und z. B. ein leitfähiges Harz oder eine Metallisierung ist, hergestellt.The WO 93/15521 A1 discloses a method for connecting a ground contact a semiconductor device having a ground contact of a substrate, wherein the semiconductor device with the active surface after down and ground contact up over the substrate with solder bumps and a underfiller, the over a hole is injected in the substrate is attached. The connection between the ground contact of the semiconductor device and the ground contact of the substrate is about a conductive one Material that covers the entire arrangement and z. B. a conductive resin or a metallization is made.
Die Aufgabe der vorliegenden Erfindung besteht darin, ein Verfahren zur Verbindung eines Bauelements mit einem Substrat und eine elektrische Schaltung, die unter Verwendung dieses Verfahrens erzeugt wird, zu schaffen, wobei die dem Substrat zugewandte Seite des Bauelements dauerhaft zugänglich ist.The The object of the present invention is a method for connecting a device to a substrate and an electrical circuit, which is generated using this method, to create wherein the substrate facing side of the device permanently accessible is.
Diese Aufgabe wird durch ein Verfahren zur Verbindung eines Bauelements mit einem Substrat gemäß Anspruch 1 und eine elektrische Schaltung gemäß Anspruch 20 gelöst.These The object is achieved by a method for connecting a component with a substrate according to claim 1 and an electrical circuit according to claim 20 solved.
Der vorliegenden Erfindung liegt die Erkenntnis zugrunde, daß durch das Vorsehen einer Barriere an dem Rand einer Öffnung in einem Substrat Bauelemente, wie z. B. Gassensoren, Feuchtesensoren etc., die eine direkte atmosphärische Einwirkung für ihre Funktion benötigen, in Flip-Chip-Technologie aufgebaut werden können.The present invention is the recognition nis basis that by providing a barrier at the edge of an opening in a substrate, components such. As gas sensors, humidity sensors, etc., which require a direct atmospheric impact for their function, can be constructed in flip-chip technology.
Ein Vorteil der vorliegenden Erfindung besteht darin, daß ein Reinigen des Zwischenraums oder Spalts zwischen dem Bauelement und dem Substrat von Flußmittelrückständen und ein Trockenblasen desselben durch Zuführen des Reinigungsmittels bzw. der Luft, z. B. Stickstoff, in die Öffnung von der Rückseite des Substrats erfolgen kann. Dies geschieht in vorteilhafter Weise z. B. durch Einspritzen des Reinigungsmittels von der Unterseite des Substrats und/oder durch Ansaugen desselben von der Oberseite.One Advantage of the present invention is that a cleaning the gap or gap between the device and the substrate of flux residues and a dry-blowing thereof by supplying the cleaning agent or the air, for. As nitrogen, in the opening from the back of the substrate can take place. This is done in an advantageous manner z. B. by injecting the detergent from the bottom of the substrate and / or by sucking it from the top.
Ein weiterer Vorteil der vorliegenden Erfindung besteht darin, daß an der Öffnung ein Unterdruck angelegt werden kann, um die Fließgeschwindigkeit des Unterfüllers zu erhöhen, oder darin, daß der Unterfüller durch die Öffnung eingepreßt oder von oben angesaugt werden kann, wodurch Lufteinschlüsse minimiert werden.One Another advantage of the present invention is that at the opening a Vacuum can be applied to the flow rate of the underfillers too increase, or in that the under filler through the opening pressed or can be sucked in from above, which minimizes air pockets become.
Wiederum ein weiterer Vorteil der vorliegenden Erfindung besteht darin, daß an allen Kanten des Bauelements Unterfüller abgesetzt werden kann, da die durch den Unterfüller verdrängte Luft über die Öffnung in dem Substrat entweichen kann, womit die Gefahr von Lufteinschlüssen verringert wird.In turn Another advantage of the present invention is that at all Edges of the component underfiller can be discontinued because the displaced by the underfill air escape through the opening in the substrate which reduces the risk of trapped air.
Ein weiterer Vorteil der vorliegenden Erfindung besteht darin, daß durch das schnellere Fließen des Unterfüllers, oder dadurch, daß der Unterfüller bedingt durch den Bereich der Öffnung nicht mehr unter den gesamten Chip fließen muß, die Prozeßzeiten mehr als halbiert werden.One Another advantage of the present invention is that by the faster flow of the Under the filler, or in that the Underfiller conditionally through the area of the opening no longer has to flow under the entire chip, the process times more than halved.
Ein Vorteil der vorliegenden Erfindung besteht weiterhin darin, daß über der Öffnung in dem Substrat Bauelemente angeordnet werden können, die Luft (Dielektrizitätskonstante 1) als umgebendes Medium, wie z. B. HF-Bauelemente, oder eine direkte atmosphärische Einwirkung für ihre Funktion benötigen.One Advantage of the present invention further consists in that over the opening in the substrate components can be arranged, the air (dielectric constant 1) as a surrounding medium, such. As RF devices, or a direct atmospheric impact for your Need function.
Bevorzugte Weiterbildungen sind in den Unteransprüchen definiert.preferred Further developments are defined in the subclaims.
Bevorzugte Ausführungsbeispiele der vorliegenden Erfindung werden nachfolgend unter Bezugnahme auf die beiliegenden Zeichnungen näher erläutert. Es zeigen:preferred embodiments The present invention will be described below with reference to FIG the enclosed drawings closer explained. Show it:
In der nachfolgenden Beschreibung sind gleiche Elemente und Teile in den Zeichnungen mit gleichen Bezugszeichen versehen.In the following description, the same elements and parts in the drawings provided the same reference numerals.
Bei
dem Verfahren der vorliegenden Erfindung wird zunächst das
Substrat
Optional
kann die Öffnung
Die Öffnung
Beim
dem Schritt des Reinigens und Trockenblasens wird das Reinigungsmittel
in vorteilhafter Weise z. B. durch Einspritzen durch die Öffnung
Beim
dem Schritt des Unterfüllens
wird an die Öffnung
Nach
dem Unterfüllen
des Bauelements
Wird
ein optisch transparenter Unterfüller
Die
Randbereiche
In
Die Öffnung
Die
Barriere
Beim
Unterfüllen
wird der Unterfüller
Der
Unterfüller
Die
Barriere
Nach
dem Unterfüllen
des Bauelements
Anstelle
der in der
Die
Randbereiche
Die
Barriere
Die
Barriere
Andere
Formen der Barrierenbildung sind möglich. Die Barriere
Wie
in
Die
Randbereiche
Ferner
existieren zusätzliche
Anwendungen, bei denen ein Zugang zu der aktiven Chipoberfläche
In
Die
Verbindung und der elektrische Kontakt der LED
Die
Barrieren
Die
Randbereiche
Anwendungen
dieser Anordnung liegen dabei insbesondere in der Kombination von
Linsen, Blenden etc. mit LEDs, Laserdioden, insbesondere vertikal
emittierende Laserdioden, z. B. bei der Kopplung einer LED oder
eines Lasers an eine Faser oder allgemeiner zur Auskopplung von
erzeugtem Licht, wie z. B. durch die Pfeile in
Die
Randbereiche
Die
Randbereiche
Die
Linse
Nach
dem Unterfüllen
des Bauelements
Der
Unterfüller
Bezugnehmend
auf
Die
Seitenwände
Die
Randbereiche
Die
Seitenwände
Die
Randbereiche
Die
Seitenwände
Die
Randbereiche
Die
Seitenwände
Die
Randbereiche
Andere
Substanzen mit spezifischen physikalischen Eigenschaften können in
die Öffnung
im Substrat
Andere
Substanzen zur Unterstützung
der Sensorikfähigkeit,
wie z. B. Diffusionsschichten, Kontaktmittel für Sensoren auf der Haut, etc.,
können
in die Öffnung
im Substrat
Bezugnehmend
auf
Lotkugeln
aufgebracht sind. Eine Kappe
Die
Kappe
Die
Die
Randbereiche
Die in den Ausführungsbeispielen beschriebene Öffnung in dem Substrat kann eine beliebige, vom jeweiligen Anwendungsbereich der Anordnung abhängige Form aufweisen. Die Öffnung in dem Substrat kann z. B. rechteckig, oval oder rund sein.The in the embodiments described opening in the substrate can be any, from the respective application the arrangement dependent Have shape. The opening in the substrate may, for. B. rectangular, oval or round.
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19810060A DE19810060B4 (en) | 1997-05-07 | 1998-03-09 | A method of connecting a device to a substrate and an electrical circuit made therewith |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19719370 | 1997-05-07 | ||
DE19719370.6 | 1997-05-07 | ||
DE19810060A DE19810060B4 (en) | 1997-05-07 | 1998-03-09 | A method of connecting a device to a substrate and an electrical circuit made therewith |
Publications (2)
Publication Number | Publication Date |
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DE19810060A1 DE19810060A1 (en) | 1998-11-12 |
DE19810060B4 true DE19810060B4 (en) | 2005-10-13 |
Family
ID=7828939
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Application Number | Title | Priority Date | Filing Date |
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DE19810060A Expired - Lifetime DE19810060B4 (en) | 1997-05-07 | 1998-03-09 | A method of connecting a device to a substrate and an electrical circuit made therewith |
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