DE19715761A1 - Indium nitride-based thin film solar cell - Google Patents

Indium nitride-based thin film solar cell

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Publication number
DE19715761A1
DE19715761A1 DE19715761A DE19715761A DE19715761A1 DE 19715761 A1 DE19715761 A1 DE 19715761A1 DE 19715761 A DE19715761 A DE 19715761A DE 19715761 A DE19715761 A DE 19715761A DE 19715761 A1 DE19715761 A1 DE 19715761A1
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film
semiconductor film
indium nitride
solar cell
contact grid
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DE19715761A
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German (de)
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Helmut Dr Neff
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NEFF, HELMUT, 30419 HANNOVER, DE
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Tzn Forschung & Entwicklung
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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0264—Inorganic materials
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/544—Solar cells from Group III-V materials
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Abstract

A thin film solar cell has a support substrate bearing a sequence of a first low ohmic contact grid (3), a first vapour deposited indium nitride semiconductor film (4), an interlayer (5), a second indium nitride semiconductor film (6) of opposite doping to that of the first indium nitride semiconductor film (4) for forming a homojunction structure, and a further low ohmic contact grid. Also claimed is a similar thin film solar cell in which the first semiconductor film consists of a semiconductor having a different band gap and opposite doping compared with the semiconductor film of indium nitride, so that a heterojunction structure is obtained. Preferably, the first semiconductor film is a silicon, gallium nitride or germanium film.

Description

Die Erfindung betrifft eine Dünnschicht-Solarzelle nach dem Oberbegriff des Patentan­ spruchs 1 sowie nach dem Oberbegriff des Patentanspruchs 2.The invention relates to a thin-film solar cell according to the preamble of the patent claim 1 and according to the preamble of claim 2.

Bekannte Dünnschicht-Solarzellen besitzen als Zellmaterial GaAs, InP (Indiumphosphid), CdTe oder CdS und als Grundmaterial Silizium.Known thin-film solar cells have GaAs, InP (indium phosphide), CdTe or CdS and silicon as the base material.

Aus der DE-41 32 903 C2 ist eine dünne Solarzelle bekannt, deren Körper im wesentlichen aus photoaktiven Halbleiterschichten besteht und deren Grundstruktur ein GaAs (Galliumarsenid) ist und eine direkte Bandlücke von 1,4 eV besitzt. Um eine dünne Zelle mit hohem Wirkungsgrad herzustellen, werden Vorder- und Rückseitenverschaltungspunkte der Solarzellen auf derselben Seite eines die Solarzelle stabilisierenden Deckglases angebracht.From DE-41 32 903 C2 a thin solar cell is known, the body of which is essentially consists of photoactive semiconductor layers and their basic structure is a GaAs (Gallium arsenide) and has a direct band gap of 1.4 eV. To a thin cell Manufacturing with high efficiency become front and rear interconnection points of the solar cells on the same side of a cover glass stabilizing the solar cell appropriate.

Die DE-41 32 882 C2 beschreibt ein Verfahren zur Herstellung einer Dünnschichtsolarzelle, die als pn-CdTe/CdS-Dünnschichtsolarzelle (Cadmiumtellurid/Cadmiumsulfid) aus einem Natron-Kalk-Glas als Substratmaterial besteht, wobei dieses Substrat mit der CdS-Schicht oder CdTe-Schicht beschichtet wird. Bei all den vorgenannten Solarzellen ist der Herstellungsaufwand, d. h. beim Gewinnen der Zellmaterialien, hoch und damit für eine Massenfertigung unwirtschalflich. Zudem sind die Grundbestandteile aus As, Te und Cd in den Solarzellen außerordentlich giftig. Auch besitzen sie geringe Wirkungsgrade (< 10%).DE-41 32 882 C2 describes a method for producing a thin-film solar cell, which as a pn-CdTe / CdS thin-film solar cell (cadmium telluride / cadmium sulfide) from one Soda-lime glass as the substrate material, this substrate with the CdS layer or CdTe layer is coated. For all of the aforementioned solar cells, the manufacturing effort, i. H. when winning the Cell materials, high and therefore uneconomical for mass production. They are also Basic components from As, Te and Cd in the solar cells are extremely toxic. Also they have low efficiencies (<10%).

Die Aufgabe der Erfindung besteht darin, eine Solarzelle der eingangs genannten Art anzugeben, mit dem höhere Wirkungsgrade erreicht und die Herstellungskosten bzw. Materialkosten gesenkt werden. The object of the invention is to provide a solar cell of the type mentioned specify with which higher efficiencies are achieved and the manufacturing costs or Material costs can be reduced.  

Die Aufgabe wird durch die im Anspruch 1 und Anspruch 2 genannten Merkmale gelöst.The object is achieved by the features mentioned in claim 1 and claim 2.

Erfindungsgemäß wird als Basismaterial des Zellmaterials, für Halbleiterschichten einer Solarzelle Indiumnitrid (InN) genutzt. Dieses Material ist ein direkter Halbleiter mit einer direkten Bandlücke von 1,9 eV und ist optimal für den Betrieb von Dünnschichtsolarzellen. Der erreichbare Wirkungsgrad liegt bei über 20%. Indiumnitrid ist ungiftig und steht als Rohstoff in vergleichweise größeren Mengen zur Verfügung als As, Te oder Cd. Im Vergleich zu bekannten Zelltypen auf der Basis von Silizium weist die Zelle aus Indiumni­ trid einen deutlich höheren Wirkungsgrad auf.According to the invention, one is used as the base material of the cell material for semiconductor layers Indium nitride (InN) solar cell used. This material is a direct semiconductor with one direct band gap of 1.9 eV and is optimal for the operation of thin-film solar cells. The achievable efficiency is over 20%. Indium nitride is non-toxic and is available as Raw material available in comparatively larger quantities than As, Te or Cd. in the The cell made of indiumni has a comparison to known cell types based on silicon has a significantly higher efficiency.

Da es sich bei Indiumnitrid um einen Halbleiter handelt, ist die optische Absorptionslänge kurz, die Diffusionslänge der optisch angeregten Ladungsträger aber vergleichsweise groß. Damit lassen sich ein Homo-Junction-Zellenaufbau (Kombination zweier identischer Halbleiterschichten mit unterschiedlichen Dotierungen) und auch ein Hetero-Junction- Zellenaufbau (Kombination von zwei unterschiedlichen Halbleiterschichten und damit unterschiedlichen optischen Bandlücken mit unterschiedlichen Dotierungen) herstellen, womit Indiumnitrid ein breites Verwendungsspektrum besitzt, unter anderem für die Herstellung von Solarzellen.Since indium nitride is a semiconductor, the optical absorption length is in short, the diffusion length of the optically excited charge carriers is comparatively large. This allows a homo-junction cell structure (combination of two identical Semiconductor layers with different doping) and also a hetero junction Cell structure (combination of two different semiconductor layers and thus different optical band gaps with different doping), with which indium nitride has a wide range of uses, including for Manufacture of solar cells.

Der Wirkungsgrad von Indiumnitrid-Homo-Junction-Solarzellen liegt aufgrund der erst oberhalb von 1.9 eV einsetzenden Absorption unter dem der Hetero-Junction-Solarzelle.The efficiency of indium nitride homo-junction solar cells is due to the first absorption above 1.9 eV below that of the hetero-junction solar cell.

Vorteilhafte Ausführungen sind in den Unteransprüchen enthalten.Advantageous designs are contained in the subclaims.

Die Schichtdicken können sehr klein gehalten werden (< 10-6 m), wobei das Indiumnitrid sowohl n- als auch p-dotiert werden kann, was bereits aus Appl. Phys. Lett. 66 (22), 29 May 1995 Seiten 3042 bis 3044 bekannt ist.The layer thicknesses can be kept very small (<10 -6 m), and the indium nitride can be n- as well as p-doped, which is already apparent from Appl. Phys. Lett. 66 (22), May 29, 1995, pages 3042 to 3044.

Anhand eines Ausführungsbeispieles mit Zeichnung soll die Erfindung noch näher erläutert werden. The invention is to be explained in more detail using an exemplary embodiment with a drawing will.  

Es zeigen:Show it:

Fig. 1 Eine Homo-Junction-Zelle in Schnittdarstellung; . Figure 1 is a homo-junction cell in a sectional view;

Fig. 2 eine Hetero-Junction-Zelle in Schnittdarstellung. Fig. 2 shows a heterojunction cell in a sectional view.

In Fig. 1 ist eine Solarzelle (Photozelle) als Homo-Junction-Zelle 1 dargestellt. Diese besteht aus einem Trägersubstrat 2, beispielsweise Keramik, Glas oder Saphir. Auf dieses Trägersubstrat 2 aufgebracht ist ein metallischer Kontaktgrid 3 mit geringen ohmigen Kontakten 8 zu einem darüber liegenden aufgedampften Halbleiterfilm 4 Dieser Halbleiter­ film 4 ist ein Indiumnitridfilm und beispielsweise n-dotiert. Eine Zwischenschicht 5 trennt den ersten Halbleiterfilm 4 von einem weiteren Halbleiterfilm 6 gleichen Materials,d. h. gleichfalls Indiumnitrid, das gegenüber dem ersten Halbleiterfilm 4 eine entgegengesetzte Dotierung aufweist (p-Dotierung). Auf dieser Oberfläche des zweiten Halbleiterfilms 6 befindet sich wieder ein metallischer Kontaktgrid 7 mit niederohmigen Kontakten 9. Über die Kontaktgride 3 und 7 mit Kontakten 9 erfolgt der Abgriff des in der Solarzelle durch einen Lichteinstrahl 10 erzeugten Stromes. Die Stromerzeugung erfolgt in bekannter Art und Weise.In Fig. 1, a solar cell (photovoltaic cell) as a homo-junction cell 1 is shown. This consists of a carrier substrate 2 , for example ceramic, glass or sapphire. Applied to this support substrate 2 is a metallic contact grid 3 with low-impedance contacts 8 to an overlying deposited semiconductor film 4 This semiconductor film 4 is a Indiumnitridfilm and, for example, n-doped. An intermediate layer 5 separates the first semiconductor film 4 from a further semiconductor film 6 of the same material, ie likewise indium nitride, which has an opposite doping than the first semiconductor film 4 (p-doping). On this surface of the second semiconductor film 6 there is again a metallic contact grid 7 with low-resistance contacts 9 . The current generated in the solar cell by a light beam 10 is tapped via the contact grids 3 and 7 with contacts 9 . Electricity is generated in a known manner.

Die Fig. 2 stellt eine Photozelle als Hetero-Junction-Zelle 11 dar. Hierbei befinden sich auf einem Trägersubstrat 12 mit einem darauf aufgetragenen metallischen Kontaktgrid 13 mit geringen ohmigen Kontakten 18 ein beispielsweise p-dotierter Halbleiterfilm 14, beispiels­ weise ein Siliziumfilm. Dieser Halbleiterfilm 14 wird durch eine Zwischenschicht 15 von einem weiteren Halbleiterfilm 16, der neben einer entgegengesetzten Dotierung auch eine unterschiedliche optische Bandlücke zum Halbleiterfilm 14 aufweist und damit aus einem anderen Material besteht, getrennt. Der Halbleiterfilm 16 ist ein n-dotiertes Indiumnitrid. Auf der Oberfläche des Halbleiterfilms 16 befindet sich ein weiteres metallisches Kontakt­ grid 17 mit niederohmigen Kontakten 19. Bei der Heterero-Junction-Zelle 11 sind nachfolgende Kombinationen zwischen dem Halbleiterfilm 16 und dem Halbleiterfilm 14 möglich:
n-InN/p-GaN oder Legierungen davon,
p-InN/N-GaN oder Legierungen davon,
n-InN/p-Si, p-Ge oder Legierungen von beiden,
p-InN/n-Si, n-Ge oder Legierungen von beiden. Fig. 2 illustrates a photocell as a hetero-junction cell 11. In this case, located on a carrier substrate 12 having applied thereto metallic contact grid 13 with low-impedance contacts 18 a, for example, p-doped semiconductor film 14, example, a silicon film. This semiconductor film 14 is separated by an intermediate layer 15 from a further semiconductor film 16 which , in addition to an opposite doping, also has a different optical band gap to the semiconductor film 14 and thus consists of a different material. The semiconductor film 16 is an n-doped indium nitride. A further metallic contact grid 17 with low-resistance contacts 19 is located on the surface of the semiconductor film 16 . The following combinations between the semiconductor film 16 and the semiconductor film 14 are possible in the heterero junction cell 11 :
n-InN / p-GaN or alloys thereof,
p-InN / N-GaN or alloys thereof,
n-InN / p-Si, p-Ge or alloys of both,
p-InN / n-Si, n-Ge or alloys of both.

Neben diesen vorteilhaften Kombinationen ist der Indiumnitridfilm 16 auch mit weiteren nachfolgenden Halbleiterfilmen 14 kombinierbar.In addition to these advantageous combinations, the indium nitride film 16 can also be combined with other subsequent semiconductor films 14 .

So kann die Solarzelle 11 in Kombination von InN mit Indium-Zinn-Oxid (ITO) aufgebaut sein, oder
durch Kombination von InN mit Metallen, z. B. Cu, Au, Cr, die mit dem Halbleiter InN einen sogenannten Schottky-Kontakt bilden, d. h. mit einem nichtlinearen Strom-Spannungs- Verhalten.For example, the solar cell 11 can be constructed in a combination of InN with indium tin oxide (ITO), or
by combining InN with metals, e.g. B. Cu, Au, Cr, which form a so-called Schottky contact with the semiconductor InN, ie with a non-linear current-voltage behavior.

Weiterhin sind die bereits bekannten Halbleiter p-CdS, p-CdTe oder Legierungen davon mit dem n-dotierten InN und n-CdS, h-CdTe oder Legierungen davon mit dem p-dotierten InN kombinierbar, sowie
p-GaAs, -InP, -MAs oder Legierungen davon mit dem n-dotierten InN und n-GaAs, -InP, -MAs oder Legierungen davon mit dem p-dotierten InN.Furthermore, the already known semiconductors p-CdS, p-CdTe or alloys thereof can be combined with the n-doped InN and n-CdS, h-CdTe or alloys thereof with the p-doped InN, and
p-GaAs, -InP, -MAs or alloys thereof with the n-doped InN and n-GaAs, -InP, -MAs or alloys thereof with the p-doped InN.

Die Herstellung der Photozelle 1 bzw. 11 erfolgt nach bereits bekannten Verfahren, beispielsweise Epitaxieverfahren, wobei auch der Indiumnitridfilm nach bekannten Herstellungsverfahren hergestellt wird. The photocell 1 or 11 is produced by known processes, for example epitaxy processes, the indium nitride film also being produced by known production processes.

BezugszeichenlisteReference list

11

Homo-Junction-Zelle
Homo junction cell

22nd

Träger
carrier

33rd

Metallischer Kontaktgrid
Metallic contact grid

44th

Indiumnitrid (negativ dotiert)
Indium nitride (negatively doped)

55

Interface (Zwischenschicht)
Interface (intermediate layer)

66

Indiumnitrid (positiv dotiert)
Indium nitride (positively doped)

77

Metallischer Kontaktgrid
Metallic contact grid

88th

Kontakte
contacts

99

Kontakte
contacts

1010th

Lichtstrahl
Beam of light

1111

Hetero-Junction-Zelle
Hetero junction cell

1212th

Träger
carrier

1313

Metallischer Kontaktgrid
Metallic contact grid

1414

Indiumnitrid
Indium nitride

1515

Interface (Zwischenschicht)
Interface (intermediate layer)

1616

Silicium
Silicon

1717th

Metallischer Kontaktgrid
Metallic contact grid

1818th

Kontakte
contacts

1919th

Kontakte
contacts

Claims (6)

1. Dünnschicht-Solarzelle mit einem Trägersubstrat, einem darauf aufgebrachten niederohmigen Kontaktgrid, einem ersten Halbleiterfilm, einer Zwischenschicht, einem zweiten Halbleiterfilm und einem weiteren niederohmigen Kontaktgrid, gekennzeichnet durch folgende Merkmale:
  • - auf dem ersten Kontaktgrid (3) ist ein Indiumnitridfilm (4) als der erste Halbleiterfilm aufgedampft,
  • - dieser Indiumnitridfilm (4) ist durch die Zwischenschicht (5) von einem weiteren Indiumnitridfilm (6) als der zweite Halbleiterfilm getrennt,
  • - der weitere Indiumnitridfilm (6) als der zweite Halbleiterfilm weist eine entgegengesetzte Dotierung zum ersten Indiumnitridfilm (4) auf, wodurch eine Homo-Junction-Struktur erreicht wird,
  • - auf dem zweiten Indiumnitridfilm (6) ist der weitere Kontaktgrid (7) aufgetragen.
1. Thin-film solar cell with a carrier substrate, a low-resistance contact grid applied thereon, a first semiconductor film, an intermediate layer, a second semiconductor film and a further low-resistance contact grid, characterized by the following features:
  • an indium nitride film ( 4 ) is evaporated on the first contact grid ( 3 ) as the first semiconductor film,
  • this indium nitride film ( 4 ) is separated by the intermediate layer ( 5 ) from a further indium nitride film ( 6 ) than the second semiconductor film,
  • the further indium nitride film ( 6 ) than the second semiconductor film has an opposite doping to the first indium nitride film ( 4 ), whereby a homo-junction structure is achieved,
  • - The further contact grid ( 7 ) is applied to the second indium nitride film ( 6 ).
2. Dünnsicht-Solarzelle mit einem Trägersubstrat und einem darauf aufgebrachten niederohmigen Kontaktgrid, einem ersten Halbleiterfilm, einer Zwischenschicht, einem zweiten Halbleiterfilm und einem weiteren niederohmigen Kontaktgrid, gekennzeichnet durch folgende Merkmale:
  • - auf den ersten Halbleiterfilm (14) mit der darauf befindlichen Zwischenschicht (15) ist ein Indiumnitridfilm (16) als zweiter Halbleiterfilm aufgebracht, auf den sich der weitere Kontaktgrid (17) befindet,
  • - wobei der erste Halbleiterfilm (14) gegenüber dem Indiumnitridfilm (16) eine andere Bandlücke und entgegengesetzte Dotierung aufweist,
  • - wodurch eine Hetero-Junction-Struktur erreicht wird.
2. Thin-film solar cell with a carrier substrate and a low-resistance contact grid applied thereon, a first semiconductor film, an intermediate layer, a second semiconductor film and a further low-resistance contact grid, characterized by the following features:
  • - An indium nitride film ( 16 ) is applied as a second semiconductor film to the first semiconductor film ( 14 ) with the intermediate layer ( 15 ) thereon, on which the further contact grid ( 17 ) is located,
  • - The first semiconductor film ( 14 ) has a different band gap and opposite doping compared to the indium nitride film ( 16 ),
  • - whereby a hetero junction structure is achieved.
3. Dünnschicht-Solarzelle nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Schichtdicke des ersten Halbleiterfilms (4, 14) sowie des zweiten Halbleiterfilms (6, 16) kleiner 10 µm beträgt.3. Thin-film solar cell according to claim 1 or 2, characterized in that the layer thickness of the first semiconductor film ( 4 , 14 ) and the second semiconductor film ( 6 , 16 ) is less than 10 microns. 4. Dünnschicht-Solarzelle nach Anspruch 2, dadurch gekennzeichnet, daß der erste Halbleiterfilm (14) ein Siliziumfilm ist.4. Thin-film solar cell according to claim 2, characterized in that the first semiconductor film ( 14 ) is a silicon film. 5. Dünnschicht-Solarzelle nach Anspruch 2, dadurch gekennzeichnet, daß der erste Halbleiterfilm (14) ein Germaniumfilm ist.5. Thin-film solar cell according to claim 2, characterized in that the first semiconductor film ( 14 ) is a germanium film. 6. Dünnschicht-Solarzelle nach Anspruch 2, dadurch gekennzeichnet, daß der erste Halbleiterfilm (14) ein Galiumnitridfilm ist.6. Thin-film solar cell according to claim 2, characterized in that the first semiconductor film ( 14 ) is a galium nitride film.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355874B1 (en) * 1999-08-03 2002-03-12 Fuji Xerox Co., Ltd. Semiconductor device and solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355874B1 (en) * 1999-08-03 2002-03-12 Fuji Xerox Co., Ltd. Semiconductor device and solar cell

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