DE19621931C1 - Silver@ baking paste giving barrier-free, solderable contact film with good adhesion to ceramic cold conductor - Google Patents
Silver@ baking paste giving barrier-free, solderable contact film with good adhesion to ceramic cold conductorInfo
- Publication number
- DE19621931C1 DE19621931C1 DE19621931A DE19621931A DE19621931C1 DE 19621931 C1 DE19621931 C1 DE 19621931C1 DE 19621931 A DE19621931 A DE 19621931A DE 19621931 A DE19621931 A DE 19621931A DE 19621931 C1 DE19621931 C1 DE 19621931C1
- Authority
- DE
- Germany
- Prior art keywords
- silver
- free
- barrier
- ceramic
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 12
- 239000004020 conductor Substances 0.000 title abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 239000011230 binding agent Substances 0.000 claims abstract description 5
- -1 4 to 12 wt .-% Chemical compound 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- XBYNNYGGLWJASC-UHFFFAOYSA-N barium titanium Chemical compound [Ti].[Ba] XBYNNYGGLWJASC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thermistors And Varistors (AREA)
- Glass Compositions (AREA)
Abstract
Description
Die Erfindung betrifft eine silberhaltige Einbrennpaste zur sperrschichtfreien und lötfähigen Kontaktierung von keramischen Kaltleitern auf Basis von Bariumtitanat durch einen einstufigen Einbrennprozeß.The invention relates to a silver-containing baking paste for junction-free and solderable contacting of ceramic PTC thermistors based on barium titanate a one-step burn-in process.
Keramische elektrische Widerstände mit positivem Temperaturkoeffizienten des Widerstandswerts finden in neuerer Zeit breite Anwendung. Sie bestehen aus ferroelektrischen, durch Dotierung mit gitterfremden Ionen halbleitend gemachten keramischen Materialien und besitzen eine Perowskitstruktur. Am häufigsten wird Bariumtitanat verwendet, das mit Seltenen Erden, Antimon, Niob, Wismut oder Wolfram dotiert ist.Ceramic electrical resistors with positive Temperature coefficients of the resistance value can be found in more recently widely used. they consist of ferroelectric, by doping with non-lattice ions semi-conductive ceramic materials and own a perovskite structure. The most common is barium titanate used that with rare earth, antimony, niobium, bismuth or doped with tungsten.
Solche Kaltleiter-Bauelemente müssen mit anderen Bauelementen verbunden werden, was normalerweise durch das Anlöten von Drähten geschieht. Dazu müssen die keramischen Oberflächen mit einer sperrschichtfreien metallischen und lötfähigen Kontaktschicht versehen werden, die eine gute Haftfestigkeit aufweist.Such PTC thermistor components must be combined with others Components are connected, which is usually what Soldering of wires happens. To do this, the ceramic Surfaces with a barrier-free metallic and solderable contact layer can be provided, which is a good Has adhesive strength.
Diese Kontaktschichten dürfen keine den Widerstandswert des Kaltleiters beeinflussende Sperrschicht zwischen Metall und Keramik ausbilden und müssen außerdem mit deren Keramikkörper sehr fest verbunden sein, damit die angelöteten Stromzuführungsdrähte bei mechanischer Belastung nicht die Kontaktschicht von der Keramik abreißen.These contact layers must not have the resistance value of the PTC influencing barrier layer between metal and Train ceramics and must also with them Ceramic body must be very firmly connected so that soldered power supply wires for mechanical Do not stress the contact layer of the ceramic tear off.
Zur sperrschichtfreien Kontaktierung haben sich unedle Metalle, wie Aluminium, Chrom, Nickel oder Indium bzw. Indium-Gallium als brauchbar erwiesen, die allerdings mit einfachen Mitteln nur schwer lötbar sind. Dagegen bilden die gut lötbaren Edelmetalle, wie Silber oder Gold, eine Sperrschicht zwischen Metall und Keramik aus und sind daher in reiner Form für eine Kontaktschicht ungeeignet.Base contacts have been developed for contact-free contact Metals such as aluminum, chromium, nickel or indium or Indium-gallium has been shown to be useful, although with simple means are difficult to solder. Form against it the easily solderable precious metals, such as silver or gold, one Barrier layer between metal and ceramic and are therefore in its pure form unsuitable for a contact layer.
Aus der DE-PS 23 48 946 und der DE-PS 23 30 908 ist es bekannt, Bariumtitanat-Kaltleiter zuerst mit einer sperrfreien Schicht aus Indium, Indium-Gallium, Aluminium oder Chrom zu versehen und darauf eine lötfähige Silberschicht aufzubringen. Diese Verfahren haben aber den Nachteil, daß sie mehrstufig und damit recht aufwendig durchgeführt werden müssen.From DE-PS 23 48 946 and DE-PS 23 30 908 it is known, barium titanate PTC thermistor first with a barrier-free layer of indium, indium-gallium, aluminum or chrome and a solderable Apply silver layer. However, these procedures have the Disadvantage that they are multi-stage and therefore quite expensive must be carried out.
Die DE-PS 19 47 799 beschreibt ein Verfahren, bei der eine Paste aus etwa 80% Silberpulver mit etwa 10% eines leicht oxidierbaren Metallpulvers, wie Zink, Blei, Zinn, Indium oder Aluminium, und mit etwa 10% Titanhydrid auf die Keramikoberfläche aufgebrannt wird. Diese Paste wird in der Praxis allerdings wenig eingesetzt, da die Verwendung von Titanhydrid Probleme bereitet.DE-PS 19 47 799 describes a method in which one Paste from about 80% silver powder with about 10% one light oxidizable metal powder, such as zinc, lead, tin, indium or aluminum, and with about 10% titanium hydride on the Ceramic surface is burned. This paste is in the In practice, however, little used because the use of Titan hydride is causing problems.
Aus der DE-PS 16 65 880 ist eine silberhaltige Einbrennpaste zur Kontaktierung von keramischen Kaltleitern bekannt, die aus etwa 62% Silber, etwa 24% Indium, etwa 5% Gallium, etwa 2% Wismutoxid und etwa 3% Blei-Bor-Silikatglas-Fritte besteht, wobei das Indium und Gallium auf der Oberfläche von 10 bis 50 µm dicken Silber- oder Aluminiumoxid-Teilchen aufgebracht sein müssen. Die Paste kann auch organische Bestandteile in Form von Bindemitteln und Lösungsmitteln enthalten. Diese Paste hat den Nachteil, daß sie nur sehr umständlich hergestellt werden kann und sich in der Praxis nicht bewährt hat.From DE-PS 16 65 880 is a silver-containing Burn-in paste for contacting ceramic PTC thermistors known to consist of approximately 62% silver, approximately 24% indium, approximately 5% gallium, about 2% bismuth oxide and about 3% There is lead-boron-silicate glass frit, the indium and Gallium on the surface of 10 to 50 µm thick silver or Alumina particles must be applied. The paste can too organic components in the form of binders and solvents contain. This paste has the disadvantage that it is only very cumbersome can be produced and has not proven itself in practice.
DE-PS 41 39 157 offenbart Einbrennpasten zur Erzeugung ohmscher Elektroden auf Halbleiterkeramiken, wobei die Pasten als metallische Komponenten Aluminium und Silizium enthalten. Die dort erwähnten Vergleichsmaterialien auf Basis von Silber und Zink werden als schlecht eingestuft.DE-PS 41 39 157 discloses baking pastes for the production of ohmic Electrodes on semiconductor ceramics, the pastes being metallic Components contain aluminum and silicon. The ones mentioned there Comparative materials based on silver and zinc are called poorly classified.
Es war daher Aufgabe der vorliegenden Erfindung, eine silberhaltige Einbrennpaste zur sperrschichtfreien und lötfähigen Kontaktierung von keramischen Kaltleitern, auf der Basis von Bariumtitanat, durch einen einstufigen Einbrennprozeß zu entwickeln, die einfach herzustellen und problemlos zu verwenden ist.It was therefore an object of the present invention, a silver-containing Burn-in paste for junction-free and solderable contacting of ceramic PTC thermistors based on barium titanate to develop one-step baking process that is easy to manufacture and is easy to use.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß die Paste aus 40 bis 75 Gew.-% Silberpulver, 4 bis 12 Gew.-% Eisenpulver, 2 bis 8 Gew.-% Glasfritte und 14 bis 54 Gew.-% organischen Harzen und Lösungsmitteln besteht.This object is achieved in that the paste 40 to 75% by weight of silver powder, 4 to 12% by weight of iron powder, 2 to 8 % By weight of glass frit and 14 to 54% by weight of organic resins and Solvents.
Vorzugsweise enthält die Paste 65 bis 75 Gew.-% Silberpulver, 7 bis 8 Gew.-% Eisenpulver und 3 bis 4 Gew.-% Glasfritte, Rest organische Bestandteile.The paste preferably contains 65 to 75% by weight of silver powder, 7 to 8 % By weight of iron powder and 3 to 4% by weight of glass frit, the rest organic Components.
Besonders bewährt haben sich Eisenpulver mit einer Korngröße von 1 bis 150 µm, insbesondere 6 bis 10 µm. Die Glasfritten sollten Erweichungspunkte zwischen 300 und 600°C aufweisen. Sie bestehen vorteilhafterweise aus einem Bleiborsilikatglas.Iron powders with a grain size of 1 to have proven particularly useful 150 µm, especially 6 to 10 µm. The glass fries should Have softening points between 300 and 600 ° C. They exist advantageously from a lead borosilicate glass.
Diese Pasten werden mit den üblichen Verfahren, wie Siebdruck oder Aufspritzen, auf die keramischen Kaltleiter aufgetragen und nach dem Trocknen bei 400 bis 700°C eingebrannt. Man erhält mit diesen Pasten sperrschichtfreie Kontaktschichten, die sich mit den handelsüblichen Weichloten gut löten lassen und eine hervorragende Haftfestigkeit aufweisen.These pastes are made using the usual methods, such as screen printing or Spray on, applied to the ceramic thermistor and after the Dried baked at 400 to 700 ° C. You get with these pastes barrier free Contact layers that deal with the commercially available Have soft solder well soldered and an excellent one Have adhesive strength.
Folgende Beispiele sollen die Erfindung näher erläutern:The following examples are intended to illustrate the invention:
- 1. Ein Kaltleiter aus Bariumtitanat wird per Siebdruck mit einer Paste beschichtet, die aus 65 Gew.-% Silberpulver mit einer mittleren Korngröße von 8 µm, 5 Gew.-% Eisenpulver mit einer mittleren Korngröße von 5 µm, 4 Gew.-% einer Glasfritte der Zusammensetzung PbO·B₂O₃·SiO₂·Al₂O₃·TiO₂ und einer Korngröße von <10 µm, 3 Gew.-% Ethylcellulose und 23 Gew.-% Terpineol besteht. Nach dem Trocknen bei etwa 100°C und dem Einbrennen bei 620°C erhält man eine ca. 10 µm starke sperrschichtfreie Kontaktschicht, auf die sich mit einem SnP6 63/37-Lot Anschlußdrähte gut auflöten lassen. Auch bei starker mechanischer Beanspruchung haftet die Kontaktschicht fest auf der keramischen Unterlage.1. A PTC thermistor made of barium titanate is screen printed with a paste coated, which consists of 65 wt .-% silver powder with an average grain size of 8 µm, 5% by weight Iron powder with an average grain size of 5 µm, 4 % By weight of a glass frit of the composition PbO · B₂O₃ · SiO₂ · Al₂O₃ · TiO₂ and a grain size of <10 µm, 3% by weight Ethyl cellulose and 23 wt .-% terpineol. After this Drying at around 100 ° C and baking at 620 ° C an approx. 10 µm thick barrier layer-free is obtained Contact layer that is covered with a SnP6 63/37 solder Allow the connection wires to be soldered on well. Even with strong ones The contact layer is liable to mechanical stress firmly on the ceramic base.
- 2. Analog Beispiel 1 wird eine Paste aus 75 Gew.-% Silberpulver (2 µm), 8 Gew.-% Eisenpulver (10 µm), 3 Gew.-% Glasfritte der Zusammensetzung von Beispiel 1 und 14 Gew.-% organische Bestandteile auf einen Bariumtitankaltleiter aufgebracht. Nach dem Einbrennen bei 640°C erhält man eine sperrschichtfreie Kontaktschicht, die sich ebenfalls sehr gut löten läßt und eine hervorragende Haftfestigkeit besitzt.2. Analogous to Example 1, a paste of 75% by weight is Silver powder (2 µm), 8% by weight iron powder (10 µm), 3% by weight glass frit of the composition of Example 1 and 14% by weight of organic ingredients Barium titanium thermistor applied. After branding at 640 ° C you get a barrier free Contact layer that can also be soldered very well and has excellent adhesive strength.
Claims (2)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19621931A DE19621931C1 (en) | 1996-05-31 | 1996-05-31 | Silver@ baking paste giving barrier-free, solderable contact film with good adhesion to ceramic cold conductor |
| TW086107323A TW396351B (en) | 1996-05-31 | 1997-05-29 | Stoving paste containing silver for contacting ceramic PTC thermistors |
| JP9141652A JPH1070003A (en) | 1996-05-31 | 1997-05-30 | Silver-containing baking paste for bringing ceramic ptc thermistor into contact |
| KR1019970021836A KR100426158B1 (en) | 1996-05-31 | 1997-05-30 | Silver-containing stubbing paste for attaching ceramic PTC thermistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19621931A DE19621931C1 (en) | 1996-05-31 | 1996-05-31 | Silver@ baking paste giving barrier-free, solderable contact film with good adhesion to ceramic cold conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19621931C1 true DE19621931C1 (en) | 1997-11-13 |
Family
ID=7795824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19621931A Expired - Lifetime DE19621931C1 (en) | 1996-05-31 | 1996-05-31 | Silver@ baking paste giving barrier-free, solderable contact film with good adhesion to ceramic cold conductor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH1070003A (en) |
| KR (1) | KR100426158B1 (en) |
| DE (1) | DE19621931C1 (en) |
| TW (1) | TW396351B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1665880C3 (en) * | 1967-02-23 | 1975-12-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Ceramic electrical resistor with a positive temperature coefficient of the resistance value and contact assignments without a barrier layer, as well as a method for its production |
| DE4139157C2 (en) * | 1990-11-30 | 1993-08-12 | Murata Mfg. Co., Ltd., Nagaokakyo, Kyoto, Jp |
-
1996
- 1996-05-31 DE DE19621931A patent/DE19621931C1/en not_active Expired - Lifetime
-
1997
- 1997-05-29 TW TW086107323A patent/TW396351B/en not_active IP Right Cessation
- 1997-05-30 KR KR1019970021836A patent/KR100426158B1/en active IP Right Grant
- 1997-05-30 JP JP9141652A patent/JPH1070003A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1665880C3 (en) * | 1967-02-23 | 1975-12-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Ceramic electrical resistor with a positive temperature coefficient of the resistance value and contact assignments without a barrier layer, as well as a method for its production |
| DE4139157C2 (en) * | 1990-11-30 | 1993-08-12 | Murata Mfg. Co., Ltd., Nagaokakyo, Kyoto, Jp |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100426158B1 (en) | 2004-06-24 |
| JPH1070003A (en) | 1998-03-10 |
| KR970076909A (en) | 1997-12-12 |
| TW396351B (en) | 2000-07-01 |
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Owner name: DEGUSSA-HUELS AG, 60311 FRANKFURT, DE |
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Owner name: DMC2 DEGUSSA METALS CATALYSTS CERDEC AG, 60311 FRA |
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