DE19615481B4 - Arched metal-ceramic substrate - Google Patents
Arched metal-ceramic substrate Download PDFInfo
- Publication number
- DE19615481B4 DE19615481B4 DE19615481A DE19615481A DE19615481B4 DE 19615481 B4 DE19615481 B4 DE 19615481B4 DE 19615481 A DE19615481 A DE 19615481A DE 19615481 A DE19615481 A DE 19615481A DE 19615481 B4 DE19615481 B4 DE 19615481B4
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- ceramic layer
- metallization
- ceramic
- substrate according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09018—Rigid curved substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Gewölbtes Metall-Keramik-Substrat ausschließlich bestehend aus einer Keramikschicht (2) und jeweils einer an der Oberseite und an der Unterseite der Keramikschicht (2) vorgesehenen Metallisierung (3, 4), wobei das Substrat um wenigstens eine Achse (Q') parallel zur Ebene des Substrates gekrümmt ist, und zwar zur Ausbildung einer konvex gekrümmten Unterseite und einer konkav gekrümmten Oberseite, wobei die Dicke der Metallisierungen (3, 4) an der Oberseite und Unterseite der gewölbten Keramikschicht (2) gleich ist, dadurch gekennzeichnet, dass die Krümmung des Substrates ohne Einwirkung äußerer Kräfte beständig und in vorgegebenen Grenzen derart ausgebildet ist, dass das Substrat abgestützt auf seiner Unterseite elastisch in die ebene Form zurückgebogen werden kann.Arched metal-ceramic substrate consisting exclusively from a ceramic layer (2) and one at the top and on the underside of the ceramic layer (2) provided metallization (3, 4), the substrate being parallel about at least one axis (Q ') curved to the plane of the substrate is, for the formation of a convex curved bottom and a concave curved Top, wherein the thickness of the metallizations (3, 4) at the top and bottom of the arched Ceramic layer (2) is the same, characterized in that the curvature of the substrate without the action of external forces resistant and is formed in predetermined limits such that the substrate supported be elastically bent back into the flat shape on its underside can.
Description
Die Erfindung bezieht sich auf ein gewölbtes Metall-Keramik-Substrat gemäß Oberbegriff Patentanspruch 1.The This invention relates to a domed metal-ceramic substrate according to the generic term Claim 1.
Bekannt
ist die Herstellung von Metall-Keramik-Substraten, die jeweils aus
einer Keramikschicht mit einer Metallisierung an beiden Oberflächenseiten der
Keramikschicht bestehen, und zwar mit Hilfe des sogenannten "DCB-Verfahrens" (Direct-Copper-Bond-Technology)
und unter Verwendung von Metallisierung bildenden Metall- bzw. Kupferfolien oder
Metall- bzw. Kupferblechen, die an ihren Oberflächenseiten eine Schicht oder
einen Überzug
(Aufschmelzschicht) aus einer chemischen Verbindung aus dem Metall
und einem reaktiven Gas, bevorzugt Sauerstoff aufweisen. Bei diesem
beispielsweise in der
Bekannt
ist auch ein Metall-Keramik-Substrat (
Das Substrat wird im Verwendungsfall mit seiner konvex gewölbten Unterseite gegen einen Kühlkörper angelegt und angedrückt, so dass es dann flach und angepresst gegen den Kühlkörper anliegt. Hierdurch soll ein verbesserter Wärmeübergang zwischen Substrat und dem Kühlkörper erreicht werden. Nachteilig ist aber, dass die Anpresswirkung des Substrates allein durch die unterschiedlich dicken Metallschichten bewirkt wird, während die durch die unterschiedlichen mechanischen Spannungen in den Metallschichten, d.h. durch Einwirkung äußerer Kräfte verformte Keramikschicht dieser Anpresswirkung entgegenwirkt. Außerdem gehen insbesondere bei Verwendung von Kupfer als Metall die Anpresswirkung und damit die angestrebte Verbesserung des Wärmeübergangs durch Alterung und Fließen des Metalls verloren, ebenso auch bei größerer Erwärmung der konkaven Oberseite des Substrats durch Verlustwärme der auf dem Substrat vorgesehenen Bauelemente.The Substrate becomes in use case with its convexly arched base applied against a heat sink and pressed so that it rests flat and pressed against the heat sink. This is intended an improved heat transfer can be achieved between the substrate and the heat sink. The disadvantage, however, is that the contact pressure of the substrate alone caused by the different thickness metal layers, while the due to the different mechanical stresses in the metal layers, i.e. deformed by the action of external forces Ceramic layer counteracts this Anpresswirkung. Besides, go especially when using copper as the metal, the contact pressure and thus the desired improvement of heat transfer through aging and Flow lost of the metal, as well as greater heating of the concave top of the substrate by heat loss the provided on the substrate components.
Bekannt
ist weiterhin ein Halbleitermodul mit einem Metall-Keramik-Substrat
(
Bekannt
ist weiterhin (
Bekannt
ist weiterhin ein Verfahren zum Herstellen eines Halbleiter-Modulaufbaus
(
Aufgabe der Erfindung ist es, ein Metall-Keramik-Substrat aufzuzeigen, welches bei einer vereinfachten Herstellung, beispielsweise mit Hilfe der DCB-Technik, eine optimale Kühlwirkung gewährleistet.task The invention is to show a metal-ceramic substrate, which in a simplified production, for example by means of the DCB technique, an optimal cooling effect guaranteed.
Zur Lösung dieser Aufgabe ist ein Metall-Keramik-Substrat entsprechend dem Patentanspruch 1 ausgebildet.to solution This object is a metal-ceramic substrate according to the Claim 1 is formed.
Die Krümmung des erfindungsgemäßen Substrats besteht ohne äußere Kräfte oder Krafteinwirkung. Hierfür besitzen die beiden, jeweils unter Verwendung der DCB-Technik auf die Oberflächenseiten der Keramikschicht aufgebrachten Metallisierungen die selbe Dicke, so dass sowohl bei der Herstellung des Substrates, als auch bei der späteren Verwendung dieses Substrates ein Bimetall-Effekt bei Temperaturänderungen weitgehend vermieden werden kann. Durch die Krümmung des Substrates ist es möglich, dieses im Verwendungsfall elastisch derart in eine ebene Form zu biegen, dass es aufgrund der elastischen Spannung der Keramikschicht dicht und fest gegen eine Fläche einer wärmeableitenden Metallfläche anliegt und sich hierdurch eine verbesserte Wärmeableitung ergibt, insbesondere auch bei Verwendung einer Kühlpaste zwischen dem Substrat und der Metallplatte. Das Anliegen des Metall-Keramik-Substrates gegen die Metallfläche wird somit in erster Linie durch die elastischen Eigenschaften der Keramikschicht erreicht.The curvature of the invention Substrate exists without external forces or force. For this purpose, the two, each applied using the DCB technique on the surface sides of the ceramic layer metallization have the same thickness, so that a bimetal effect with temperature changes can be largely avoided both in the preparation of the substrate, as well as in the subsequent use of this substrate , Due to the curvature of the substrate, it is possible, in the case of use, to elastically bend this into a planar shape so that it rests tightly and firmly against a surface of a heat-dissipating metal surface due to the elastic stress of the ceramic layer, resulting in improved heat dissipation, in particular also Use of a cooling paste between the substrate and the metal plate. The concern of the metal-ceramic substrate against the metal surface is thus achieved primarily by the elastic properties of the ceramic layer.
Bei dem Krümmungsgrad, welchen die Erfindung vorsieht, ist auch ein Brechen der Keramikschicht mit Sicherheit vermieden. Weiterbildungen der Erfindung sind Gegenstand der Unteransprüche. Die Erfindung wird im Folgenden anhand der Figuren an einem Ausführungsbeispiel näher erläutert. Es zeigen:at the degree of curvature, which the invention provides, is also a breaking of the ceramic layer avoided with certainty. Further developments of the invention are the subject the dependent claims. The Invention will be described below with reference to the figures of an embodiment explained in more detail. Show it:
Das
in den Figuren dargestellte Substrat
Sei
der dargestellten Ausführungsform
besitzt die Keramikschicht
Die
Wölbung
der Keramikschicht
Es
hat sich gezeigt, dass die thermische Leitfähigkeit zwischen dem Substrat
Der
Erfindung liegt die Erkenntnis zugrunde, dass bei einer Krümmung, die
im Rahmen der vorstehend genannten Grenzen liegt, die Keramikschicht
Zusätzlich zu
dem vorstehend bereits beschriebenen Vorteil eines verbesserten
Wärmeübergangs
zwischen dem Substrat
Wie
die
Bei
der vorbeschriebenen Ausführungsform wurde
davon ausgegangen, dass das Substrat
Erfindungsgemäß besitzen
die Metallisierungen
Bei
der vorgeschriebenen Ausführungsform wurde
weiterhin davon ausgegangen, dass das Substrat einen rechteckförmigen Zuschnitt,
d.h. in Draufsicht eine rechteckförmige Ausbildung aufweist. Auch
andere Formen sind für
das Substrat denkbar, beispielsweise das in der
- 11
- Substratsubstratum
- 22
- Keramikschichtceramic layer
- 2'2 '
- Querseitetransverse side
- 3, 43, 4
- Metallisierungmetallization
- 55
- HalbleiterbauelementSemiconductor device
- 66
- Metallplattemetal plate
- 77
- Kühlpastecooling paste
- 88th
- Gehäuseteilhousing part
- 99
- Gehäusecasing
- 1010
- GehäusefalzGehäusefalz
- 1111
- Falzflächerebate surface
- 1212
- Unterseitebottom
- 1313
- dauerelastische Massepermanently elastic Dimensions
- 14, 15, 1614 15, 16
- Substratsubstratum
- L, Q, Q'L, Q, Q '
- Achseaxis
- XX
- Abstanddistance
- YY
- Längelength
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19615481A DE19615481C5 (en) | 1996-04-03 | 1996-04-19 | Arched metal-ceramic substrate |
DE59711737T DE59711737D1 (en) | 1996-04-03 | 1997-03-13 | Arched metal-ceramic substrate |
EP97104225A EP0805492B1 (en) | 1996-04-03 | 1997-03-13 | Curved metal ceramic substrate |
US08/835,049 US5981036A (en) | 1996-04-03 | 1997-03-27 | Metal ceramic substrate |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19613348.3 | 1996-04-03 | ||
DE19613348 | 1996-04-03 | ||
DE19615481A DE19615481C5 (en) | 1996-04-03 | 1996-04-19 | Arched metal-ceramic substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
DE19615481A1 DE19615481A1 (en) | 1997-10-09 |
DE19615481B4 true DE19615481B4 (en) | 2006-10-05 |
DE19615481C5 DE19615481C5 (en) | 2013-03-14 |
Family
ID=7790380
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19615481A Expired - Fee Related DE19615481C5 (en) | 1996-04-03 | 1996-04-19 | Arched metal-ceramic substrate |
DE59711737T Expired - Lifetime DE59711737D1 (en) | 1996-04-03 | 1997-03-13 | Arched metal-ceramic substrate |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE59711737T Expired - Lifetime DE59711737D1 (en) | 1996-04-03 | 1997-03-13 | Arched metal-ceramic substrate |
Country Status (1)
Country | Link |
---|---|
DE (2) | DE19615481C5 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10586756B2 (en) | 2016-10-04 | 2020-03-10 | Infineon Technologies Ag | Chip carrier configured for delamination-free encapsulation and stable sintering |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19715540C2 (en) * | 1997-04-15 | 2002-02-07 | Curamik Electronics Gmbh | Method of manufacturing a domed metal-ceramic substrate |
DE19808518C1 (en) * | 1998-02-27 | 1999-08-05 | Rockwool Mineralwolle | Coating and impregnation of mineral wool for the production of insulation boards |
DE10024111B4 (en) * | 2000-05-18 | 2006-02-23 | Robert Bosch Gmbh | Method for producing a component from plates which have been stacked and soldered to one another |
US8154114B2 (en) | 2007-08-06 | 2012-04-10 | Infineon Technologies Ag | Power semiconductor module |
US8018047B2 (en) | 2007-08-06 | 2011-09-13 | Infineon Technologies Ag | Power semiconductor module including a multilayer substrate |
WO2012108073A1 (en) * | 2011-02-08 | 2012-08-16 | 富士電機株式会社 | Method for manufacturing heat dissipating plate for semiconductor module, said heat dissipating plate, and semiconductor module using said heat dissipating plate |
JP6395530B2 (en) | 2014-09-11 | 2018-09-26 | 三菱電機株式会社 | Semiconductor device |
EP3263537B1 (en) | 2016-06-27 | 2021-09-22 | Infineon Technologies AG | Method for producing a metal-ceramic substrate |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0144866A2 (en) * | 1983-11-25 | 1985-06-19 | Kabushiki Kaisha Toshiba | Semiconductor device comprising a substrate |
DE2947270C2 (en) * | 1978-11-25 | 1986-12-11 | Kyocera Corp., Kyoto | Ceramic substrate |
EP0254692A1 (en) * | 1986-07-17 | 1988-01-27 | STMicroelectronics S.r.l. | Semiconductor device mounted in a highly flexible, segmented package, provided with heat sink |
EP0279601A2 (en) * | 1987-02-19 | 1988-08-24 | Marconi Electronic Devices Limited | Electrical conductor arrangement |
DE4004844C1 (en) * | 1990-02-16 | 1991-01-03 | Abb Ixys Semiconductor Gmbh | Copper metallisation on ceramic substrate - obtd. by bonding copper foil directly to whole surface of substrate, then masking and etching |
DE4233073A1 (en) * | 1992-10-01 | 1994-04-07 | Siemens Ag | Semiconductor modular structure prodn. - by convexly shaping and bonding in single hot pressing operation |
JPH07202073A (en) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | Ceramic circuit board |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3127457C2 (en) * | 1981-07-11 | 1985-09-12 | Brown, Boveri & Cie Ag, 6800 Mannheim | Converter module |
DE3521572A1 (en) * | 1985-06-15 | 1986-12-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | PERFORMANCE SEMICONDUCTOR MODULE WITH CERAMIC SUBSTRATE |
DE3935792A1 (en) * | 1989-10-27 | 1991-05-02 | Bosch Gmbh Robert | Encapsulated electronic circuit on substrate - has ceramic green sheet foil, forming wall(s) encapsulating housing |
DE4319944C2 (en) * | 1993-06-03 | 1998-07-23 | Schulz Harder Juergen | Multiple substrate and process for its manufacture |
-
1996
- 1996-04-19 DE DE19615481A patent/DE19615481C5/en not_active Expired - Fee Related
-
1997
- 1997-03-13 DE DE59711737T patent/DE59711737D1/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2947270C2 (en) * | 1978-11-25 | 1986-12-11 | Kyocera Corp., Kyoto | Ceramic substrate |
EP0144866A2 (en) * | 1983-11-25 | 1985-06-19 | Kabushiki Kaisha Toshiba | Semiconductor device comprising a substrate |
EP0254692A1 (en) * | 1986-07-17 | 1988-01-27 | STMicroelectronics S.r.l. | Semiconductor device mounted in a highly flexible, segmented package, provided with heat sink |
EP0279601A2 (en) * | 1987-02-19 | 1988-08-24 | Marconi Electronic Devices Limited | Electrical conductor arrangement |
DE4004844C1 (en) * | 1990-02-16 | 1991-01-03 | Abb Ixys Semiconductor Gmbh | Copper metallisation on ceramic substrate - obtd. by bonding copper foil directly to whole surface of substrate, then masking and etching |
DE4233073A1 (en) * | 1992-10-01 | 1994-04-07 | Siemens Ag | Semiconductor modular structure prodn. - by convexly shaping and bonding in single hot pressing operation |
JPH07202073A (en) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | Ceramic circuit board |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10586756B2 (en) | 2016-10-04 | 2020-03-10 | Infineon Technologies Ag | Chip carrier configured for delamination-free encapsulation and stable sintering |
Also Published As
Publication number | Publication date |
---|---|
DE19615481A1 (en) | 1997-10-09 |
DE59711737D1 (en) | 2004-08-05 |
DE19615481C5 (en) | 2013-03-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: ELECTROVAC AG, KLOSTERNEUBURG, AT |
|
8128 | New person/name/address of the agent |
Representative=s name: PATENTANWAELTE WASMEIER, GRAF, 93055 REGENSBURG |
|
8181 | Inventor (new situation) |
Inventor name: SCHULZ-HARDER, JOERGRN, DR.ING., 91207 LAUF, DE Inventor name: MAIER, PETER H.,DIPL.-KAUFM., 91207 LAUF, DE |
|
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