DE19520457A1 - Sensing element for probe used to measure topography of sample surface in raster scan microscope - Google Patents
Sensing element for probe used to measure topography of sample surface in raster scan microscopeInfo
- Publication number
- DE19520457A1 DE19520457A1 DE19520457A DE19520457A DE19520457A1 DE 19520457 A1 DE19520457 A1 DE 19520457A1 DE 19520457 A DE19520457 A DE 19520457A DE 19520457 A DE19520457 A DE 19520457A DE 19520457 A1 DE19520457 A1 DE 19520457A1
- Authority
- DE
- Germany
- Prior art keywords
- sample surface
- lever arm
- sensing element
- raster scan
- probe used
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title claims description 16
- 238000012876 topography Methods 0.000 title claims description 4
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000013016 damping Methods 0.000 abstract description 2
- 230000004075 alteration Effects 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000004630 atomic force microscopy Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 235000017606 Vaccinium vitis idaea Nutrition 0.000 description 1
- 244000077923 Vaccinium vitis idaea Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q20/00—Monitoring the movement or position of the probe
- G01Q20/04—Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
Die Erfindung betrifft einen Meßfühler einer Sonde zur Messung der Topographie einer Probenoberfläche. Ein derartiger Meßfühler wird beispielsweise in Rasterkraftmikrosko pen eingesetzt.The invention relates to a probe of a probe for measuring the topography of a Sample surface. Such a sensor is used, for example, in atomic force microscopes pen used.
Seit zehn Jahren gibt es die von Binnig et al. (G. Binnig, C. F. Quate and C. Gerber, Phys. Rev. Lett. 56 (1986) 930) entwickelte Rasterkraft-Mikroskopie. Sie hat universa le Bedeutung erlangt, weil mit ihr Metall-Halbleiter- und Isolator-Oberflächen im Kontaktmodus mit fast atomarer lateraler Auflösung und im Nicht-Kontaktmodus mit geringerer lateraler Auflösung untersucht werden können. Ein Übersichtsartikel über die Methode der Rasterkraftmikroskopie und die Kräfte zwischen Sonde und Probe die damit gemessen werden können findet sich in E. Meyer and H. Heinzelmann, Springer- Series in Surface Sciences 28 (1992) 99.Binnig et al. (G. Binnig, C. F. Quate and C. Gerber, Phys. Rev. Lett. 56 (1986) 930) developed atomic force microscopy. It has universa le gaining importance because with it metal-semiconductor and insulator surfaces in Contact mode with almost atomic lateral resolution and in non-contact mode with lower lateral resolution can be examined. An overview article about the Atomic force microscopy method and the forces between probe and sample this can be measured in E. Meyer and H. Heinzelmann, Springer- Series in Surface Sciences 28 (1992) 99.
Inzwischen sind Sonden, die aus Siliziumnitrid, aus Siliziumdioxid oder aus n-dotier tem, einkristallinem Silizium bestehen, kommerziell erhältlich (Nanosensors GmbH, Aid lingen, BRD, Park Scientific Instruments Sunnyvale, CA USA). Die beiden wesentli chen Komponenten solcher Sonden sind ein biegsamer Hebelarm und zum Ende hin eine exponierte Spitze. Hebelarm und Spitze stellen den Meßfühler dar. Ein solcher Fühler ist typischerweise 300 µm lang und 10 µm breit. Die Federkonstante beträgt typischerweise 0,01-1 N/m. In the meantime, probes are made of silicon nitride, silicon dioxide or n-doped single-crystalline silicon, commercially available (Nanosensors GmbH, Aid lingen, Germany, Park Scientific Instruments Sunnyvale, CA USA). The two essential Chen components of such probes are a flexible lever arm and one towards the end exposed tip. Lever arm and tip represent the sensor. Such a sensor is typically 300 µm long and 10 µm wide. The spring constant is typically 0.01-1 N / m.
Es ist zwecks Ermittlung von Oberflächentopographien von Interesse, extrem kleine Be wegungen oder Auslenkungen des Meßfühlers, insbesondere Bewegungen bzw. Auslen kungen kleiner als 1 Å, registrieren zu können.It is of interest for the purpose of determining surface topographies, extremely small loading movements or deflections of the sensor, especially movements or deflections kungen less than 1 Å, to be able to register.
Es ist Aufgabe der Erfindung, einen Meßfühler zur Registrierung derartiger Bewegungen oder Auslenkungen zu schaffen.It is an object of the invention to provide a sensor for registering such movements or create excursions.
Die Aufgabe wird mit einem Meßfühler gemäß Anspruch gelöst. Vorzugsweise bestehen die Elektroden aus Metallen und der Tunnelkontakt aus dem entsprechenden Metalloxid. Der Hebelarm ist mit einem Tunnel-Kontakt versehen, welcher vorzugsweise am Ende des Hebelarms angebracht ist.The object is achieved with a sensor according to claim. Preferably exist the electrodes made of metals and the tunnel contact made of the corresponding metal oxide. The lever arm is provided with a tunnel contact, which is preferably at the end the lever arm is attached.
Kleine Auslenkungen des Hebelarms bewirken Deformationen einer geeignet angebrach ten Tunnelverbindung. Mittels einer hieran angeschlossenen Elektronik werden Ände rungen des Tunnelstromes registriert und als Maß für die Auslenkung ausgewertet. Auf diese Weise können bei der Rasterkraftmikroskopie Messungen im Kontaktmodus durchgeführt werden.Small deflections of the lever arm cause deformation of a suitably attached one tunnel connection. Changes are made using electronics connected to it of the tunnel current and evaluated as a measure of the deflection. On In this way, measurements in contact mode can be carried out in atomic force microscopy be performed.
Wird eine Messung im dynamischen Nicht-Kontaktmodus durchgeführt, so schwingt der Hebelarm mit seiner Resonanzfrequenz. Dämpfungen der Schwingungsamplitude bei Annäherung an die Probenoberfläche aufgrund von Sonden - Proben - Wechselwirkun gen bewirken dann Amplitudenänderungen des oszillierenden Tunnelstroms.If a measurement is carried out in dynamic non-contact mode, the oscillates Lever arm with its resonance frequency. Damping the vibration amplitude at Approach to the sample surface due to probe - sample interaction gen then cause changes in the amplitude of the oscillating tunnel current.
Der Meßfühler ist unter Extrembedingungen einsetzbar und zwar insbesondere bei tiefen Temperaturen und/oder Ultrahochvakuumbedingungen. Konventionelle Meßfühler sind für einen derartigen Einsatz kaum oder wenig geeignet.The sensor can be used under extreme conditions, especially at low ones Temperatures and / or ultra high vacuum conditions. Conventional sensors are hardly or little suitable for such an application.
Bei entsprechend tiefen Temperaturen läßt sich der Tunnelkontakt auch als Josephson- Tunnelkontakt ausführen. Die Elektroden bestehen dann aus supraleitendem Material (Hoch- oder Tieftemperatursupraleiter).At correspondingly low temperatures, the tunnel contact can also be used as a Josephson Execute tunnel contact. The electrodes then consist of superconducting material (High or low temperature superconductors).
Es zeigen: Show it:
Fig. 1 Meßfühler mit vertikal angebrachtem Josephson-Kontakt Fig. 1 sensor with vertically attached Josephson contact
Fig. 2 Meßfühler mit horizontal angebrachtem Josephson-Kontakt. Fig. 2 probe with horizontally attached Josephson contact.
Fig. 1, a) zeigt eine Aufsicht auf den Meßfühler 1. Auf ihm befinden sich zwei aus Alu minium bestehende Elektroden 3, die im Bereich 4 überlappen. Im Überlappungsbereich 4 befindet sich zwischen den Elektroden 3 die Tunnelbarriere 2 (siehe Seitenansicht ge mäß Fig. 1, b)), bestehend aus Aluminiumoxyd. Fig. 1 a) shows a plan view of the probe 1. On it there are two electrodes 3 made of aluminum, which overlap in area 4 . In the overlap area 4 is between the electrodes 3, the tunnel barrier 2 (see side view ge according to Fig. 1, b)), consisting of aluminum oxide.
Fig. 2 zeigt einen zweiten möglichen Aufbau des Meßfühlers. Fig. 2 shows a second possible structure of the sensor.
Bei einem weiteren, hier nicht dargestellten Aufbau bildet der Meßfühler 1 unmittelbar eine der beiden Elektroden 3. Es können auch andere, geeignet gewählte Materialien zur Realisierung des Meßfühlers verwendet werden.In another construction, not shown here, the sensor 1 directly forms one of the two electrodes 3 . Other, suitably selected materials can also be used to implement the sensor.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19520457A DE19520457C2 (en) | 1995-06-03 | 1995-06-03 | Sensor probe for measuring the topography of a sample surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19520457A DE19520457C2 (en) | 1995-06-03 | 1995-06-03 | Sensor probe for measuring the topography of a sample surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE19520457A1 true DE19520457A1 (en) | 1996-12-05 |
| DE19520457C2 DE19520457C2 (en) | 1997-07-31 |
Family
ID=7763636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19520457A Expired - Fee Related DE19520457C2 (en) | 1995-06-03 | 1995-06-03 | Sensor probe for measuring the topography of a sample surface |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE19520457C2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8919212B2 (en) | 2010-07-16 | 2014-12-30 | Forschungszentrum Juelich Gmbh | Infrared sensor comprising tunnel junction for measuring the deformation of a membrane |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0290647A1 (en) * | 1987-05-12 | 1988-11-17 | International Business Machines Corporation | Oscillating quartz atomic force microscope |
| DE3922589A1 (en) * | 1989-07-10 | 1991-01-24 | Forschungszentrum Juelich Gmbh | RASTERKRAFTMIKROSKOP |
| GB2238161A (en) * | 1989-08-18 | 1991-05-22 | Rosser Roy J | Attractive atomic force microscope |
-
1995
- 1995-06-03 DE DE19520457A patent/DE19520457C2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0290647A1 (en) * | 1987-05-12 | 1988-11-17 | International Business Machines Corporation | Oscillating quartz atomic force microscope |
| DE3922589A1 (en) * | 1989-07-10 | 1991-01-24 | Forschungszentrum Juelich Gmbh | RASTERKRAFTMIKROSKOP |
| GB2238161A (en) * | 1989-08-18 | 1991-05-22 | Rosser Roy J | Attractive atomic force microscope |
Non-Patent Citations (4)
| Title |
|---|
| HANSMA, P.K.: Squeezable Tunneling Junctions, IBM J.Res.Develop., Vol. 30, No. 4, July 1986, S. 370-373 * |
| ITOH, T. et al.: Scanning force microscope using a piezoelectric microcantilever,J.Vac.Sci.Technol.B 12 (3), May/June 1994, S. 1581-1585 * |
| TORTONESE, M. et al.: Atomic resolution with an atomic force microscope using piezoresistive detection, Appl.Phys.Lett. 62 (8), 22. Febr. 1993, S. 834-836 * |
| US Reissue 33 387 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8919212B2 (en) | 2010-07-16 | 2014-12-30 | Forschungszentrum Juelich Gmbh | Infrared sensor comprising tunnel junction for measuring the deformation of a membrane |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19520457C2 (en) | 1997-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |