DE1933831B2 - SOLID SWITCHING ELEMENT WITH A BODY OF A MATERIAL THAT CHANGES ITS CONDUCTIVITY FROM A LOW VALUE TO A HIGH VALUE UNDER THE INFLUENCE OF AN ELECTRIC FIELD - Google Patents

SOLID SWITCHING ELEMENT WITH A BODY OF A MATERIAL THAT CHANGES ITS CONDUCTIVITY FROM A LOW VALUE TO A HIGH VALUE UNDER THE INFLUENCE OF AN ELECTRIC FIELD

Info

Publication number
DE1933831B2
DE1933831B2 DE19691933831 DE1933831A DE1933831B2 DE 1933831 B2 DE1933831 B2 DE 1933831B2 DE 19691933831 DE19691933831 DE 19691933831 DE 1933831 A DE1933831 A DE 1933831A DE 1933831 B2 DE1933831 B2 DE 1933831B2
Authority
DE
Germany
Prior art keywords
conductivity
influence
changes
electric field
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691933831
Other languages
German (de)
Other versions
DE1933831A1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1933831A1 publication Critical patent/DE1933831A1/en
Publication of DE1933831B2 publication Critical patent/DE1933831B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
DE19691933831 1968-07-01 1969-06-30 SOLID SWITCHING ELEMENT WITH A BODY OF A MATERIAL THAT CHANGES ITS CONDUCTIVITY FROM A LOW VALUE TO A HIGH VALUE UNDER THE INFLUENCE OF AN ELECTRIC FIELD Pending DE1933831B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE09059/68A SE349426B (en) 1968-07-01 1968-07-01

Publications (2)

Publication Number Publication Date
DE1933831A1 DE1933831A1 (en) 1970-01-29
DE1933831B2 true DE1933831B2 (en) 1971-03-04

Family

ID=20275718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691933831 Pending DE1933831B2 (en) 1968-07-01 1969-06-30 SOLID SWITCHING ELEMENT WITH A BODY OF A MATERIAL THAT CHANGES ITS CONDUCTIVITY FROM A LOW VALUE TO A HIGH VALUE UNDER THE INFLUENCE OF AN ELECTRIC FIELD

Country Status (6)

Country Link
BE (1) BE735485A (en)
DE (1) DE1933831B2 (en)
FR (1) FR2022098A1 (en)
GB (1) GB1258163A (en)
NL (1) NL6910074A (en)
SE (1) SE349426B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3373352A1 (en) * 2014-12-09 2018-09-12 Symetrix Memory LLC Transition metal oxide resistive switching device with doped buffer region

Also Published As

Publication number Publication date
BE735485A (en) 1969-12-16
NL6910074A (en) 1970-01-05
FR2022098A1 (en) 1970-07-31
SE349426B (en) 1972-09-25
DE1933831A1 (en) 1970-01-29
GB1258163A (en) 1971-12-22

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