DE1931245A1 - Process for dividing Mg-Al spinel substrate disks coated with semiconductor material and provided with components - Google Patents
Process for dividing Mg-Al spinel substrate disks coated with semiconductor material and provided with componentsInfo
- Publication number
- DE1931245A1 DE1931245A1 DE19691931245 DE1931245A DE1931245A1 DE 1931245 A1 DE1931245 A1 DE 1931245A1 DE 19691931245 DE19691931245 DE 19691931245 DE 1931245 A DE1931245 A DE 1931245A DE 1931245 A1 DE1931245 A1 DE 1931245A1
- Authority
- DE
- Germany
- Prior art keywords
- components
- spinel substrate
- semiconductor components
- individual
- dividing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 title claims description 14
- 239000011029 spinel Substances 0.000 title claims description 12
- 229910052596 spinel Inorganic materials 0.000 title claims description 12
- 239000000463 material Substances 0.000 title claims description 7
- 229910003023 Mg-Al Inorganic materials 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000013467 fragmentation Methods 0.000 claims description 3
- 238000006062 fragmentation reaction Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 238000007373 indentation Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical group Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Dicing (AREA)
Description
Berlin mid Hüiiciion _......__Berlin mid Hüiiciion _......__
PAPA
Verfahren zum Zerteilen von mit Halbleitermaterial beschichteten und mit Bauelementen versehenen Mg-Al-Spinellsubstrat-Method for dividing Mg-Al spinel substrate coated with semiconductor material and provided with components
scheiben.slices.
Die Erfindung betrifft ein Verfahren zum Zerteilen einer Vielzahl von auf einer mit Halbleitermaterial beschichteten Mg-Al-Spinellsubstratscheibe befindlichen Halbleiterbauelenent3, insbesondere integrierten Schaltkreisen.The invention relates to a method for dividing a multiplicity of Mg — Al spinel substrate wafer coated with semiconductor material located semiconductor components3, in particular integrated circuits.
Ein wesentlicher Faktor in der Herstellung von Halbleiterbauelementen und integrierten Schaltkreisen ist heutzutage, die Technologie und Konstruktion der Bauelemente auf die Forderung der Massenfertigung abausteilen.An essential factor in the manufacture of semiconductor components and integrated circuits nowadays, the technology and design of the components is on the demand the mass production.
Zur Herstellung von integrierten Schaltkreisen werden SiIiciumschichten epitaktisch auf Mg-Al-Spinellsubstratscheiben abgeschieden. Im Verlaufe einer Reihe von Verfahrensschritten der Planartechnik wie Eindiffundieren von p- oder n-leitenden Dotierungsstoffen und Oxidmaskierungen entstehen elektrische Schaltkreise, deren Dichte bis zu 10.000/cm beträgt. Um die einzelnen Bauelemente auf Sockel zu montieren und mit weiteren elektrischen Anschlüssen r;u versehen, sowie um diö durch Verfahrensfehler und- mechanische Einflüsse unbrauchbar gewordenen Bauelemente auszuscheiden, ist es notwendig, die beschichtete Spinellsübstratöcheibe in ihre einzelnen Elemente zu zerteilen. Auf Grund der sehr großen Härte der Spinellsubstratscheiben ergeben sich für eine zerstörungsfreie Zerteilung erhebliche Schwierigkeiten.Silicon layers are used to manufacture integrated circuits deposited epitaxially on Mg-Al spinel substrate disks. In the course of a series of process steps in planar technology such as diffusion of p- or n-conducting Dopants and oxide masks result in electrical circuits with a density of up to 10,000 / cm. To the to assemble individual components on the base and to provide additional electrical connections, as well as to do so due to procedural errors and- to eliminate mechanical influences that have become unusable components, it is necessary to remove the coated To divide the spinel substrate into its individual elements. Due to the very high hardness of the spinel substrate disks, a considerable amount of non-destructive fragmentation results Trouble.
Biese Schwierigkeiten v/erden durch das erfinäungsgöraäße Verfahren auf sehr einfache WeiseTgeiö'it, indem die Sßinelisübsträt-These difficulties are caused by the method according to the invention in a very simple way, by using the sweet
H 9/5OiAbo äat/is 1 ö 9 * 2 β M-S H 9 / 50Abo aat / is 1 ö 9 * 2 β MS
2*6.19692 * 6.1969
SAD ORfQfNAtSAD ORfQfNAt
scheibe vor. der Erzeugung der einzelnen Halbleiterbauelemente mit einer die <1OO>~Richtungen anzeigenden Markierung versehen wird, dann die Bauelemente so erzeugt v/erden, daß ihre Begrenzungslinien parallel zu den markierten <100>-Richtungen verlaufen, and die Zerteilung der gesamten Substratscheibe in die einzelnen Bauelemente längs dieser Linien durch Einritzen und mechanische Trennverfahren vorgenommen wird.washer forward. the production of the individual semiconductor components provided with a mark indicating the <1OO> ~ directions then the components are generated so that their boundary lines run parallel to the marked <100> directions, and the division of the entire substrate wafer into the individual components along these lines by scratching and mechanical Separation process is made.
Der Erfindung liegt die Beobachtung zugrunde, daß Spinellkristallscheiben, die im Zentrum punktförmig belastet werden, regelmäßig in vier Quadranten zerspringen, wobei die Bruchlinien in <100>-Richtung geradlinig verlaufen, gleichgültig, ob die Belastung senkrecht zu (100)- oder zu (111)-Ebenen erfolgt. Der Bruch verläuft nicht parallel zur (111)-Ebene, welche in der Literatur (Smakulas "Einkristalle" 1966, Seite 327; Springerverlag) als Spaltebene angeführt ist.The invention is based on the observation that spinel crystal disks, which are subjected to point loads in the center, break regularly into four quadrants, with the break lines in <100> direction run in a straight line, regardless of whether the load occurs perpendicular to (100) or to (111) planes. Of the Fraction does not run parallel to the (111) -plane, which in the literature (Smakulas "Monocrystals" 1966, page 327; Springerverlag) is listed as the cleavage plane.
Es liegt im Rahmen des Erfindungsgedankens, die Markierung der <100>-Richtungen und damit der Richtung der äußeren Begrenzung der einzelnen Bauelemente durch ein mechanisches Eindrüekverfahren durchzuführen. Dabei hat es sich als sehr vorteilhaft erwiesen, eine pyramidenförmige Diamantspit^e, wie sie bei der Messung der Härte nach Vickers verwendet wird, zu benützen. An den Ecken der rhombischen Bindrückfigur entstehen dann Einrisse, W deren Richtung parallel zu <^ 100 y verläuft.It is within the scope of the concept of the invention to mark the <100> directions and thus the direction of the outer boundary of the individual components by means of a mechanical indentation process. It has proven to be very advantageous to use a pyramid-shaped diamond tip, as is used when measuring hardness according to Vickers. Tears then appear at the corners of the rhombic backbone figure, W the direction of which runs parallel to <^ 100 y .
Es ist aber ebenso möglich, die Markierung der <100>-Richtungen auf röntgenografischem Wege festzulegen.However, it is also possible to mark the <100> directions to be determined by radiographic means.
Gemäß einem Ausführungsbeispiel nach der Lehre der Erfindung erfolgt die Zerteilung der Substratscheibe durch Anwendung mechanischer Kräfte längs der eingeritzten Linien. Dabei hat es sich als sehr günstig erwiesen, den notwendigen Druck mittels einer Walze aus hartem Material, insbesondere einer Stahlwalze, zu erzeugen. . " .According to an embodiment according to the teaching of the invention the fragmentation of the substrate wafer by using mechanical Forces along the incised lines. It has proven to be very beneficial to apply the necessary pressure by means of a Roller made of hard material, in particular a steel roller, too produce. . ".
Die Zerteilüiig der Spineilsübstratseheibe kann aber auch durchThe splitting of the Spineilsübstratseheibe can also through
VA 9/501/480 109828/161? „3- VA 9/501/480 109828/161? "3-
BADORtGiNAl,BADORtGiNAl,
ein thermisches Trennverfahren, z.B. mittels Antippen der Trennlinien mit einem erhitzten Keil oder einer erwärmten Spitze, erfolgen.a thermal separation process, e.g. by tapping the separation lines with a heated wedge or tip.
Eine weitere Möglichkeit der Zerteilung in die einzlnen Halbleiterbauelemente ist durch ein Flüssigkeitsbad mit Hilfe von Ultraschall gegeben.Another possibility of dividing into the individual semiconductor components is given by a liquid bath with the help of ultrasound.
Das Verfahren nach der Lehre der Erfindung ist besonders gut geeignet zur Herstellung von integrierten Halbleiterschaltkreisen
in auf Mg-Al-Spinellsubstratscheiben epitaktisch abgeschiedenen
Siliciumschichten. Es ist aber ebenso anwendbar auch für epitaktische Schichten aus anderen Halbleitermaterialien,
wie beispielsv/i
oder Siliciumcarbid.The method according to the teaching of the invention is particularly well suited for the production of integrated semiconductor circuits in silicon layers epitaxially deposited on Mg-Al spinel substrate wafers. However, it can also be used for epitaxial layers made of other semiconductor materials, such as, for example, v / i
or silicon carbide.
lien, wie beispielsweise Germanium oder A B -Verbindungenlien, such as germanium or A B compounds
Die Figuren 1 und 2 zeigen im Ausschnitt zwei nach dem erfindungsgemäßen Verfahren mit Einritzlinien 10 und 20 versehene Mg-Al-Spnell-Kristallscheiben 1 und 2, wobei die Figur 1 eine in <100>-Richtung orientierte Kristallscheibe, die Figur 2 eine in <111>-Richtung orientierte Kristallscheibe zeigt.Figures 1 and 2 show in detail two according to the invention Method with incised lines 10 and 20 provided Mg-Al-Spnell crystal disks 1 and 2, FIG Crystal disk oriented in the <100> direction, FIG. 2 shows a crystal disk oriented in the <111> direction.
9 Patentansprüche
2 Figuren9 claims
2 figures
PA 9/501/480 109828/1617 PA 9/501/480 109828/1617
Claims (9)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691931245 DE1931245A1 (en) | 1969-06-20 | 1969-06-20 | Process for dividing Mg-Al spinel substrate disks coated with semiconductor material and provided with components |
| NL7006367A NL7006367A (en) | 1969-06-20 | 1970-04-29 | |
| FR7020961A FR2046933B1 (en) | 1969-06-20 | 1970-06-08 | |
| CH897870A CH507589A (en) | 1969-06-20 | 1970-06-15 | Method of manufacturing a variety of semiconductor devices |
| AT549370A AT317301B (en) | 1969-06-20 | 1970-06-18 | Method for dividing several semiconductor arrangements |
| GB2976570A GB1313003A (en) | 1969-06-20 | 1970-06-19 | Manufacture of semiconductor structures |
| JP5291270A JPS4827491B1 (en) | 1969-06-20 | 1970-06-19 | |
| SE861070A SE351522B (en) | 1969-06-20 | 1970-06-22 | |
| US00335739A US3816906A (en) | 1969-06-20 | 1973-02-26 | Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691931245 DE1931245A1 (en) | 1969-06-20 | 1969-06-20 | Process for dividing Mg-Al spinel substrate disks coated with semiconductor material and provided with components |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1931245A1 true DE1931245A1 (en) | 1971-07-08 |
Family
ID=5737496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691931245 Pending DE1931245A1 (en) | 1969-06-20 | 1969-06-20 | Process for dividing Mg-Al spinel substrate disks coated with semiconductor material and provided with components |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4827491B1 (en) |
| AT (1) | AT317301B (en) |
| CH (1) | CH507589A (en) |
| DE (1) | DE1931245A1 (en) |
| FR (1) | FR2046933B1 (en) |
| GB (1) | GB1313003A (en) |
| NL (1) | NL7006367A (en) |
| SE (1) | SE351522B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2648274B1 (en) * | 1989-06-07 | 1994-07-29 | Commissariat Energie Atomique | METHOD AND DEVICE FOR LABELING AND DIVIDING WAFERS OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIALS |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3169837A (en) * | 1963-07-31 | 1965-02-16 | Int Rectifier Corp | Method of dicing semiconductor wafers |
| BE668918A (en) * | 1965-08-27 | 1900-01-01 | ||
| DE1652512B2 (en) * | 1967-05-29 | 1976-08-26 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENTS |
-
1969
- 1969-06-20 DE DE19691931245 patent/DE1931245A1/en active Pending
-
1970
- 1970-04-29 NL NL7006367A patent/NL7006367A/xx unknown
- 1970-06-08 FR FR7020961A patent/FR2046933B1/fr not_active Expired
- 1970-06-15 CH CH897870A patent/CH507589A/en not_active IP Right Cessation
- 1970-06-18 AT AT549370A patent/AT317301B/en not_active IP Right Cessation
- 1970-06-19 GB GB2976570A patent/GB1313003A/en not_active Expired
- 1970-06-19 JP JP5291270A patent/JPS4827491B1/ja active Pending
- 1970-06-22 SE SE861070A patent/SE351522B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2046933B1 (en) | 1974-09-20 |
| FR2046933A1 (en) | 1971-03-12 |
| JPS4827491B1 (en) | 1973-08-23 |
| CH507589A (en) | 1971-05-15 |
| GB1313003A (en) | 1973-04-11 |
| SE351522B (en) | 1972-11-27 |
| AT317301B (en) | 1974-08-26 |
| NL7006367A (en) | 1970-12-22 |
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