DE1915614C - Magnetic layer storage - Google Patents

Description

However, the magnetizations of the storage points are exposed to effects that affect the information content these memory points seek to deteriorate, and either by the appearance of creep the walls of the magnetization areas or through demagnetizing interference fields, which occur when writing, when re-enqueuing and when reading multiple times occur or are generated by external phenomena occurring in the vicinity of the storage tank.

Surface of the carrier 1 arranged. As an example, each storage element is square Surface shown, and the distances between the storage elements are equal to the side length their square area is chosen. This is by no means necessary; in another embodiment of the memory, the memory elements are rectangular, with the parallel to the easy axis of magnetization lying side has a length of about 0.6 mm.

jeicners ciusicnciiuc instructions are generated. lying side a uangc vuu ui _B v,. ^ ... ", -...-.-. The higher the coercive force of the magnetic force, while the side perpendicular to it only has a length • i. :., * A <* it ^ f ~ _A -; _nnn _ ~: ", 4 Lj * i- i_ j-. · - λ -ι ι * r \:« c «i>; ^ hi> rAi /» Mi »nti» can be

while the se

of 0.3 mm. The storage elements can, for example have a thickness of the order of 1000 Å, which is not critical, and they

the coercive force of the anisotropic magnetic ma- may preferably, but not necessarily, usually by an increase in terinb dispersants 15 of a known nickel-iron alloy sion kr magnetic spin directions of the material with 80% iron and 20% N ^ ^{ic e} L ^ ^{he best} "\ J; J f f to" ir π locations of the storage points regarding Ani- "

sotr. i «axis of the memory bank is accompanied. Other-

the higher the coercive force of the magnetic material is, the less the disturbing effects on the contents of the storage points are known to be. However, it is also known that an increase the coercive force of the anisotropic magnetic magnet

ib times vo i sti d tue

rerse
thick
Kri <
ven
D.

Spe <.
wek
their
received

on the other hand, the storage layer can do the same

Storage elements can be affixed to the carrier by any known method in the presence of one of them

_... "Magnetic orientation determining the anisotropy axis

The higher the Koemtp /.raft is, since the 20 tation field are applied, phenomena with increasing coercive force A thin insulating film 4, for example made of ^ ^υη «'-

be changed. fabric, carries a layer of conductors 3, which are parallel

The object of the invention is to provide for the heavy axis of magnetization of the anisotropic assemblies of the type described above, the material of the storage elements 2 run. The Leic behave as if the coercive force 15 ter3 consist, for example, of copper with a anisotropic magnetic material has a thickness of the order of \ on 5 μΐη. You can em «t, but it is only slightly produced by coating the insulating film 4 or In practice, imperceptible increase in the anisotropic, for example electrochemical, autge dispersion should have. The advantages of being a sham. On this band-shaped conductor 3 are bar higher coercive force should without a substantial 30 bands 7 made of soft magnetic material Worsening of the anisotropic properties brings, for example from the aforementioned NicKeides Storage material can be achieved. Iron alloy. These bands 7 can be isotropic.

To solve this problem contains a magnet- whereby the material is in the presence of a drenieioe .. layer storage of the type specified at the beginning is applied to a vanishing or * enr the invention to "/.ieien at least a thin magnetostatic 35 low coercive force of their material. Shielding layer, which is arranged in such a way that the isotropic character of the material of the bander / second conductor layer is not between the shielding, therefore a magnetostatic Abs.tn.rschicht ensures and the storage layer lies, and the containment effect. At another embodiment saturable magnetic material, which at can have a lower magnetostatic _shielding excitation of a selection conductor of the first conductor layer 40, which, however, does not have any effect in practice the current used for word selection at all, can be achieved in that the bands 7 are sufficient the «™ selection ladder opposite locations- an anisotropic material is made of it - - · - · · ■ easy axis of magnetization perpendicular to the easy

The magnetization axis A of the storage elements 2 is onen-45 and its heavy magnetization axis is therefore parallel to the easy magnetization axis (of the storage elements 2, from which the desired magnetostatic shielding effect results.

For example, the thickness of the straps 50 on the strip-shaped conductors 3 forming material are in the order of 5500 Å.

The width of each of the conductors 3 and their spacing are substantially equal to the width and the

provided Ausiunrungsoe.sp.eu. unu spacing of the storage elements 2 in the same_ R.ch-

Fig. 12 the magnetostatic shielding of the 55 device. In practice, it is advantageous that the width dtr arrangement of fig. 10 to explain the swirl-shaped letter 3 or the bands 1 ^ w «roughly. ^to make than the expansion of the storage elements t.

The magnetic layer shown in Fiel and 2 - in this direction.

saveth if storage elements ^ from an aniso- Another insulating film 6 carries ribbon-shaped Lc. he

tropical, magnetic, for example ferromagnetic 60 which parallel to the light M ^^ ¹ ! ¹ "" ^^. ° _ηι £ see material, the axis of which is more easily magnetizable - the storage elements 2 rows D, e board the band wedge is indicated by the file A and which is in a shaped conductor 5 and ^your . ^From f ^tand _A ^c _h ^ ^s _s ^P ™ ^C - ^ ⁿ Z thin layer on an insulating carrier 1, essentially ^α »_ ^β " ^ ^β . ^Η ^. ^Α ^ Α ^η _{D, for} example made of glass or ceramic, applied Storage elements 2 in the relevant direction L) .c The underside of the carrier 1 is, if necessary, 65 Thickness of the Le.ter 5 can also be coated in the large area with a layer of mass 9. The storage ming of 5 μm . Icn | i _cr foils 4

elements! are, for example, separated from one another

and in the manner shown regularly on the unc ¹ 6 in the order of 10 μπ ..

borrowed into saturation.

The invention is illustrated by way of example with the aid of the figures explained in more detail. Show in the drawing

F i g. 1 and 1 in an oblique view and in cross section, respectively, an embodiment of an inventive Memory,

F i g. 3 to 9 further variants of the in FIG. 1 arrangement shown,

F i g. 10 another embodiment. of the memory according to the invention,

F i g. 11 a further development of the in FIG. 12 illustrated embodiment and

5 6

The proportions in the drawing are those of metallic coverings on a carrier 16, for the sake of clarity of the illustration, not to scale shown. Clearances, preferably a thin sheet of soft

As in Fig. 2 is shown, the different, magnetic, also isotropic material can be,

Arrangements described above for the formation of the 5 which serves as a yoke for closing the magnetic fluxes,

final structure of the memory on top of each other.

layers. Rungsform the film 6 by such a thin

In the embodiment shown in FIG. 3, plate 16 can be replaced, or such a plate can also be replaced

the order of the bands 7 and the storage element yoke plate above the film 6 are arranged

ments 2 reversed in the stacking. io in fig. 7, however, the ladder 3 in the form

First the bands 7 are placed on the surface of thin coverings on the bands 7 made of soft-

of the carrier 1, for example maintained on electrochemical magnetic material, while for the

Paths, formed, and then the memory select conductors insulated wires 15 are used

elements 2 applied to the bands 7. Then which are inserted into the grooves of the thin yoke plate 16,

the thin insulating films 4 and 6 with the in 15 F i g. 8 shows a counter for this embodiment

layers F i g formed in the manner described above. 7 View rotated by 90 °. You can see that in

the conductors 3 and S are placed. in this case the one containing the storage elements 2

. The storage elements 2 can also together. Storage level displayed in contiguous form

be made hanging, so that it is only through forms or at least in the form of ribbons,

the crossing points of the conductors 3 and 5 in one ao which is located under the strips 7 and the conductors' 3

uniform, covering the entire storage level, extending onto the material of the storage level

the magnetic layer are defined. You can be upset too. Of course you would have for this part

the arrangement of FIG. 1 of points in the structure also defined by the ladder. 1 retained

Strips made of magnetic material can be formed, namely a thin insulating film on which

which is applied parallel to the conductors of one of the layers as the letter 3 and the tapes 7 as coverings

get lost. are and those between the storage level and the

When the memory is in operation, the conductors 3 are inserted into the conductor 15 and receive a thin yoke plate 16

general as the information ladder and the ladder 5 is.

as a selection leader for the implementation of the letter Dk in F ϊ g. 9 shown Aüäführungsfonn has

and reading. As is known, however, two conductor layers made of insulated wires 13 and 15 can also be used

Separate information conductor layers for the to be included, which are each on thin insulating foils 14 and 26

writing information and for the information to be read are glued on top of each other. the

Information to be desired. This can, for example, intermediate film 14 can be omitted if the

wise with the arrangement of FIG. 4 realizes conductor 13 on the strips 7 of soft magnetic

in which information conductors 8 are glued to the adhesive 35 isotropic material, but this would

take the read signals on the carrier 1 which complicate the manufacture of the memory. Slide 14

Storage elements 2 are formed. Another can be between the layers during assembly Embodiment (Fig. S) are the additional Indians 13 and 15 come to lie, and these

Formation conductors 8 between the two magnetostatic conductor layers can also be in relation to one another

Shielding bands 7 and the memory 40 vertically extending grooves of a thin yoke

elementc 2 inserted. These examples show how such a plate made of soft magnetic material of the in

additional head of information in the in F i g. 2 F i g. 7 and 8 are inserted,

b / w. 3 are introduced arrangements shown. In the embodiment of FIG. 10 are the

be able. Storage elements 2 made of an anisotropic magnetic

It can be noted that, while maintaining 45 tables, material with the easy magnetization

the permissible small thicknesses the word conductor 5 at axis A again on a dielectric, non-magnetic

In another embodiment, support 1 is also attached to the support 1 table. You can for example

are arranged under the storage elements 2 as elongated bands with the same

be able. Orientation as the ribbon-shaped head 3 of the

Instead of the Leitcrschichtcn in the form of a conductive 5 ° information letter layer. To form the coverings on insulating foils, it can be magnetostatic shielding made of an anisowünsclil. wise thin enamelled copper wise assumed that they are in the form of ribbons 7 wires to use, especially door matching with the same orientation as the ribbon-shaped to the impedance of the outside of the memory 55 storage elements 2 and the ribbon-shaped conductors 3 power generator and amplifier circuits . That is trained. The selector layer is in two I i g. 6 to 9 show, for example, various planar layers, possibly spatially one above the other, from the spatial arrangement. for soft conductors divided into conductors 5 ¹ and 5 *, soft bands 7 are used in the form of insulated wires, which are shown around the magnetostatic shielding between them for Ικ-qiicmcren representation. 60, the letters 5 ¹ between the memories in I "i p. 6, the conductor wires 13 are only used for the bands 2 and the bands 7 of the magnetostatic information layer. The isotropic shielding is inserted, while the conductors 5 * ueichmagnctischc material can then be used As at 27 between the bands of the magnetostatic shields are applied to these wires 13, the formation and the layer of information on 3 that only a limited part of the 65 lie in the circumferential direction. Through each pair of superimposed wires; is covered on the ropes on which the conductors 5 ¹ and 5 * flow when energized, currents Z _1, wires are applied to the storage elements 2 in the opposite direction, this conductor hcii) ic dine layer of the Aiiswahlfeitcr 5 is in the form of spiclswcrsc an cinc . in their find of any

H2? ÄS

F i g. 12 for the execution example of can be described, but it is true that di «^ analogous way also for the export

P ¹ B- ^{1 to 9} ·. · Hen shielding understands

Under a magnetic barrier

one in! deal case, a magnetic ^ ta Mater * m borrowed large Permeabihtat so that ^s £ ^h _magnet.

tization under the effect of "nes a ^^ field changes in such a way that every. 1 _week

SSRJ ^ ««

_{elements 2 have an effect:}

_{the lnform} alionsfeld H "from said .m ERa _{formalionsIeUer} 3 flowing Ι" ιί "η" - Z ₁ is generated and perpendicular to the _Läng skanten of the band 7 is tion stream; _the selection field H _2, the iter of the _AuswahUe in the ERJ ^as S ^ and 5 × η "" * ^{"0" 1} / · * r | _{generated ird d} parallel to the

_{Long edges of} the band 7 cherishes.

SasSR

Inside the material

_eiLagc

the

. _It can

* » Γ

Who, zero. Requirement <-J ^ ^ _that

that the outer Μ »8η« · «» «- - ^ _{jm inner} en *» the magnetization at ke ncr S »c» ^e _wkd;

the shield in the saturation; G" that the permeability of "painting as ^ d

The shielding (which can be used in the P ^rak * ^isch _oß ⁿ l ^ .cn dfe Permeabili-, cn) is sufficiently large

act of vacuum is. r _o i _E forming

The described arrangements have B

Prin / ip based on: The "iagnet.sehe ad > ^ _dufch

The shape of the bands 7 is as a «sgeb ^, _{Jn djc}

aÄalfΐΓ ^ Π after more-Γ ^ Άη ^ βη of the selection field H ₂ reached. if fach ^et J ^ _gn ^g _cUsicrungs f _e , _d for the Sältigungsmagnc-SemngTeV shielding with A / ".bewchnel w, nj J ^^ the direction of the information eldes / Λ _K ? mponenle / Z _n sin Θ. For small values of O, the following _{approximation applies}

H _x

₍₁₎

_reading field // _P near the

die.es magnetic field and ^^ _m ^ _% through the 4S schuml; on the other hand the- ^ J _from vwWleiter

much stronger ^M ^ ⁿ "I _{let in} all places, avenged into saturation, so that an a ^ _ab - _rm .

which the selection magnclfcWPesi-gj ^ r. _{From this it follows:}
p = H _x -Ha

/ Z ₁ + // ₀

H _x -H ₂

OC PermeaWiHtät undhd.nu ^ _{d it;} , rkt ätanmf the Sp.ic.jer. ^ ^ ^ ^

Effect of the "W ^ Sh ^ crn 5 flowing Aus_ 55 Wd" pe ^^ _{is Wcnn on the other hand in} it

by the in the A » ^s * ^ani _dnc selection line 5 from in ^^ _{NuH has odcr licidc}

elective current controllable. Wen "^ e _{win | d Ab} . ^ The H ₁ im, _are ^ _{da & rcsuU | crc dc}

to A-- ^hI _f ^c ; ⁿ « _I ^WO en.Tang this selection ^ r gder, ^ _who \ _Nu “ _what the effect of the ab- ^^ ^ makes the use of

assigned

_{and ai} f _ch

Tolerances for d.c

1:

in the

ΐ.

-1:

J-

^ 10

element 2 made of an iron-nickel alloy with 80% would occur without interference. From the equation (for Iron and 20% nickel with a thickness of 1000 Å are the minimum values):

and a rectangular area 0.6 mm in length

(parallel to the easy axis of magnetization) and //, (with shielding)

0.3 mm wide. This results in the following 5 II., | ///>

magnetic properties when the magnetic "ι (without shielding) · ^

Shielding is not available: ²

which results from the example given above.

Coercive force // _r about 160 ampere-turns / m; can be done directly by specifying a particular

Anisotropic field strength // * · approx. 300 Amperewin- _lo value for the ratio dungen / m;

Dispersion (plus »skew«) in the order of H ₂

of a maximum of 3 ". // ^ // _/; ^

The control of the storage elements for a 15th

Writing process could then set a value of the selection field // with a selection and from this field H ₂ can be achieved, which essentially directly derive the value of the information field H ₁ , the I. times the value of the anisotropy field Hk which always has the possibility of Intervention in the is guaranteed, so in the order of 450 ampere storage.

turns / m, and with an information field // "ao The cancellation of the effect of the magnetic that for each bit a minimum value of at least shielding by applying a word field is 100 ampere-turns / m, this value of course from a delay in the appearance of the The sum of the demagnetizing field and the information flows accompanied by reading. However, dispersion is equivalent; the maximum value of the informa- the amplitude of the read currents greater than the amplification field Ha cannot exceed the value of the intrinsic coercivity of the read currents in a classic arrangement by virtue of H _{r of the storage element.} without magnetostatic shielding, and this one

A figure of merit can be defined; the greater the thickness of the, the more pronounced the effect Insensitivity or contradiction of the storage layer in comparison to the thickness of the Speirviagnciisic-füfig of the memory allowance for the memory layer in conventional magnetic layer memories Creep and external magnetic interference fields 30 is where they because of the sensitivity of the and the disturbances caused by storage elements for creeping and Entdas Ratio of the maximum value of the information magnetization field, in particular that caused by the field //, is given at its minimum value. Demagnification fields generated for the selection streams, the previously given values this quality factor should have been kept small, so a value of 1.6. 35 Because the magnetic shield acts as a lock

The attachment of a magnetic shield for the information field behaves, it is possible, two in the memory structure results in an additional or more superimposed shields to parameters. During each idle period of the memory, each of which is protected by a control line, this shield is controlled, as previously explained, which is parallel to a selection conductor in a positive manner, the magnetization condition of each 40, thus by the coincidence of the control of the memory elements against creep and the de-shielding under this selection conductor / unmagnetizing fields of any kind. A selection is made for a delegated storage element, shielding material with a Sältigungsfeld strength Hn A storage element receives the information about 450 ampere turns / m for the previously mationsfcld only if all The thickness given to the selection bar is the apparent coercive force // «45 shielding associated with the control currents equal to the sum of the inherent coercive force of the storage element and the associated control lines And function in this case is roughly equal to 610 ampere-turns / m. When the memory structure is integrated, for a write specification jg. ie for a change in the F i g. 11 shows, for example, a Spekher arrangement

Magnetization state of the storage element of the voltage, which this and function between two comparisons The value of the selection field can be changed in the order of magnitude, with the extension on of 350 ampere-turns / m is maintained, a larger number of logical variables must be used So the minimum value of the information field is larger and easily understandable:

than the previous value, namely in the ratio between the selection arrangement, which from the

55 niagnetostatic shielding tape 7 and the

H ₂ \ Hn other connected conductors 5 ¹ and 5 *, and the

/ Z ₁ 'band-shaped storage elements 2 made of anisotropic.

magnetic material is a second choice

This results in a minimum value of elv / a 200 Am-order inserted, soft from an annulus opcrewindings / m, while its maximum value then 6 ° static shielding tape 107 and together with that of the apparent coercive force //, -, (610 Ambundern 105 ' and 105 ^sec . The effect can reach percwindows / m). The quality factor of the shielding is only suppressed if that of the storage element is then equal to 3.05. Conductors 5 and 3 are excited simultaneously, and the

Make sure to keep the same selection field. The effect of the shield 107 is only suppressed. it might also be advantageous to change the selection Md to 65 if conductors 105 and 3 are energized at the same time; In particular, a value could be given to it. Therefore, in the plane of the memory element 2, the one which is smaller than the anisotrupiefddsiärkc lh effect of the magnetostatic shielding on * will be given. where every reading is then obviously suppressed if all three currents / „/ _Sl (conductor 5) and

I ₂₂ (conductor 105) can be applied at the same time. This results in a logical AND operation between the currents I _2x and I ₂₂ . If the consideration carried out for the simple arrangement of FIG. 10 is resumed, the value of the resulting field Hp acting on the storage element 2 is given by the following relationship:

H,

This clearly shows that all selection currents / ₂ must be present at the same time so that it does not become zero.

1 sheet of drawings

Claims (10)

ι 2 claims: The invention relates to a magnetic layer 1. Magnetic layer storage for binary information storage for binary information with at least one with at least one thin storage layer made of thin storage layer made of anisotropic ■ ™ W * - anisotropic magnetic material, at least apparent material, at least one first layer of a first layer of parallel, parallel in the direction of 5, in the direction of the leicn en the easy magnetization axis of the anisotropic axis of the anisotropic Maienais Material running selection ladders and few selection ladders and at least one two at least a second layer of parallel, in one of parallel, in one of the light Magneus ,, - direction different from the easy axis of magnetization. those directional ladders, ge k e η η- ίο ladders. . characterized by at least one thin In such memory is in the following way magnetostatic shielding layer, which is inscribed in this way: One of the parallel to the light magnet, is arranged so that the second conductor layer is not the selection conductor running through the sizing axis; - between the shielding layer and the storage time is excited by an electrical selection current. layer lies, and from a saturable ma- 15 from which a rotation of the magnetization ar. gnetic material, which when excited all bpeichu- a selection conductor of the first conductor layer with points to a substantially perpendicular to this ι the current serving the d, - word selection on all easy axis of magnetization running direction This selection leader opposite places and therefore in the direction of the heavy Magnei is brought into saturation locally. 20 sization axis of the material results. Before this au- 2. Magnetic layer memory according to claim 1, since the elective current disappears, the binary info: characterized in that the saturable magnetization currents for the representation of the binary digit ' see material of the shielding layer is isotropic. in one direction and for the representation of the binary 3. Magnetic layer memory according to claim 1, digit 1 in the opposite direction by d, characterized in that the saturable magnetism _{5 run} perpendicular to the axis of easy magnetization heavy magnetization axis in the, and these information streams have a longer anisotropic material of the storage layer, calculated from the direction of the easy magnetization axis of the target point of their beginning. Duration than the selection currents. This results in, 4. MagnetschidüspeLner after one of the An 30 that after the disappearance of the selection current the Claims 1 to 3, characterized in that the magnetizations at the storage points in the rich shielding layer return directly to the storage layer of the axis of easy magnetization, is applied. however, depending on the direction of the relevant information 5. Magnetic layer storage according to one of the animation currents in one or the other direction, Claims 1 to 3, characterized in that 35 it follows that the writing in the intermediate memories the shielding layer and the storage points are in the form of a \ .j state of magnetization layer a third conductor layer lies, whose conductors with opposite directions for the representation represents parallel to the conductors of the second conductor layer of the digits 0 and 1. get lost. Reading a stored in this way 6. Magnetic layer storage after one of the 40 "words" is carried out in the following way: Claims 1 to 3, characterized in that the selection is made by exciting one of the parallel Shielding layer between two oysters running in the opposite direction to the easy axis of magnetization Direction of the electric current flowing through the elective conductor of the i'st conductor layer through an eleknen Layers of selection managers lies. tric selection stream. It follows during 7. Magnetic layer memory according to Claim 6, the duration of this selection current being short-term characterized in that several shielding rotations of the Mar, -ictisierungsvektors of this stratification, the storage points assigned between two layers of optional conductor for the difficult of selection conductors lie, one on top of the other · axis of magnetization and consequently the generated are. generation of the content of the "read" memory points, 8. Magnetic layer memory according to claim 4, da- 50 the digits 0 from the digits 1 through their respective characterized in that the conductors of the second (from the directions of these magnetic turns Conductor layer consist of insulated wires and dependent) polarities differentiating Indukdaß the shielding layer made of sheaths these tion currents in the perpendicular to the selection conductor on the side of the storage layer. ladders running information ladders of the second 9. MagTietschichtpeicher after one of the conductor 55 conductor layer. Through this reading process, the Claims 1 to 8, characterized in that the stored information is destroyed, because by that The shielding layer is subdivided into bands, which provide switching in the heavy axis of magnetization perpendicular to the easy axis of magnetization, the magnetization loosens its memory of the end anisotropic material of the storage layer initial position. Therefore are additional facilities extend. 60 provided, which ensure that the magnetization 10. Magnetic layer memory according to one of the ringing vectors after the cessation of the selection stream in Claims 1 to 8, characterized in that the direction falls back, which he before the beginning of the Shielding layer is divided into as many elements as had reading. as storage locations in the storage layer can be seen, and that these shielding elements read 65 each, the same conductor layer can be used at least one surface of a storage space can also have two different conductor layers cover. for these two purposes. In known magnetic layer memories of this type