DE1900539C - Power amplifier for high frequency vibrations - Google Patents

Description

g Measures: _{hold are} , wöbe. ^the ^ * J ^) _adjacent -

», Each power transistor (10.1 to 10.4) is adjacent [J ^ J ™ ™ ^ ^ the factor 2

a current-limiting control transistor (11.1 barter Trans * torer ^ m. _{ejnes individual}

up to 11.4) , the one in the emitter- _larger , st a sd e largest A ^ ^ _thermjsche

circuit of the power transistor switched on Emitterkontaktstreiiens, ^ _transislO ren be

_jst . ₁₅ Isolation between uci

_jst . _15th

sb lits

_jst . ₁₅ isol

b) stands between the emitter electrode of each power,
transistor and the base electrode of each
associated control transistor is switched on depending on a capacitor (13.1 to 13.4) , the

for high frequency shorting DAR ₂₀ ^ ^^ ^. ^ _dunes power amplifier

ο'Γώπ. to the emitter _{flange, U} ß each Jr for Lhf ^ nte Schw, ^ (- ^ «^

^} Control transistors are each a resistor (14.1 unterh-b ^ J ⁰ - ¹ ,, J, switched power trans-

until 14 4), whose other an and ^{babIi> se} "£ *

sh. shots connected to each other and attached to the, ₅ - ^ e "contains ah ^^ ^ _x - _h imwcsem-

cinen pole of an operating voltage source c (16) E »e ™ semiconductor elements beisp, lelj. e, c

are connected; · ",. A — thin of power transistors, urs

d, ^ß the bases of the control transistors are mitein «« * £ ^^ Lcistungsverbä.ue

connected to the other, to the other pole of the _{einc bckann} tc technology dar ud

Operating voltage source (16) and to a 3 «bb _{jn used wl} rc ^ ha s

Terminal (£), which found the tiklive emitter- ■ ' _iunest applications difficult

kienTme of the connected power- » ^^ _mm phenomenon retained, st

i dtllt wolves _; ^^^

kienTme der zLag ^^ _mm

represents transistors. _{)) thermal} running away _;

2 power amplifier according to claim! ^ Da- 3 ₅ denote. ^^

characterized by the fact that each current limit- '"l ^^ es jlalbleitermatcrials with increasing circuitry with its associated power requirement of the _Therefore ^aM « *? * £

transistor is connected via a mechanically s.ch self Ttmp ™ _islorenzenCi which has become hotter supporting conductor (43 in Fig. 3). L ^ci s..ngs.r ^ _{je em} disproportionate

3 power amplifier according to claim 1, that 4. ^ "b '^ _{n fl} j _{eßl> a} further telling by characterized in that the control device larger μγο denotes a choke coil (15 in Fig. 1) contains the with ^ IeA Part or area of the transistor jinord the emitters of all control trans.storen (11.1 to>«'^ _{5 ^^^^ ßasls} . _Imd koHektor-11 4) is connected in series.' ¹ ^ _{nbt hl in which} the temperature distribution gc-

4 power amplifier according to claim 1, da- 45 wnen ta ^ ■ _{s0 that m} , essentially characterized by the fact that each current limiting nugnd & ^ , _{n this part} 1 or m this circuit is a diode (12.1 to 12.4 in Fig. 1) gicne _transistor arrangement prevails. Therefore contains the _jne between the collector of the waxing ^Ζ ^ power transistor arrangement be, subordinate control transistor and the emitter "^ j _{86" rara "e} | _e n transistor cells in the best of the associated Lcistungstransistors turned 50 ^^ behavior, as far as their electricity so that a flow of current only in.Richtung the minority carrier Faik "are the s so _angesproch when they possessed the river is possible and Lend which" ^η ^ * ^{_Ρ ζ} _{Hen less} than n. In the worst case, the emitter of the respective Leistungstrans.stors em P «^« ^ ^^ _transistor arrangement due to be injected into its base. _{bnorm high} currents in one or a couple

5. Power amplifier according to claim 1, there 55 "■ tendency to malfunction.

characterized by that the power ^{tran- Ze} ^ ' . * _{Attempts to} solve this as

sistors (10.1 to 10.4 in F ■ g. D a npn n ^ _{i) t} ™ ", ,, 'run away .. Have the problem drawn by structure, in which for cmc gain» ^ ™ ^ _R i. _kkO r, p; ; .P. Niese becomes with H.lfc of signals of the frequency F. the Bre.te X of the c. "^ ^E _{d er7 ell} . _Wi ... _ilC r in series with the η zone measured in μ such from the frequency : F Oo «£, Widersta _j _ _{cistu stransistorcnan} ord-

measured in GHz, depending on the fact that it ^A : ™ ^ _{ρη jsU which} drove the high current ;, extends approximately from% to % and that the _bci J _{e) sweise} '", it appoint the ^ UerAnKhl ^ ß

specific resistance g of the η zone, measured f ^as ^ * very

in ohm · cm, in the range from about 0.5 -X '65 upwards, _{a total solution}

_at the lower limit up to a fivefold wr sam .st, «n nc ^ ^ ^ ^^ ^. ^

higher value at the upper limit _{lies in f ncr} Zc Ie if a total of η cells are used

6. Power amplifier according to claim 1, da- one «nc ncj,,

3 ⁴

earth. The exact "fold performance is the theoretical crystalline Halble ^il £ '" ^^ emitter contacts

same limit. In addition, large distances between neighboring ^ _{n isolat on}

! Duklive transient currents that occur when switching the neighboring ^Trans ' ^sl ^ ^e " * - _{larger is} the largest

arises with inductive loading, at least one uniι den_bakio t _iUcrkonlakt strip. ^{breakdown of} the power transistors when the 5 dimension of a ^ _{elne dn of the} invention resistors, which essentially limit the ^L f ^istu "^ t ^r ans, ^s toran ^ ^ _effectivec

^ high currents are intended, errors on- possesses ^ denjo cooling st-

% Te object of the invention is now. to indicate a lead against the "tnemusc_e _{destruction of} the" nes amplifier, which the mentioned io. Furthermore, it is B _{as a consequence of}

banned disadvantage, avoids. honing 'inductive' transient currents in the connected

This object is th due to the high presence in "nduktiven cn _{occurring defects} *.

_sr "eh" specified combination solved. ^% * ° ΊΖ £ iW di invention on the basis of the

This power amplifier is advantageously m _ In the following we _{ert It shows}

_tkrart further designed such that the control means .5 F.guren beisp.els ^ _Sch altungsdarstellung

one number of non-linear Strombeerenzungsschal- F. gl ^ J ema ^c _{expansion according} to the

, "N" n contains, each of which e.ne mn one of a multiple "Ilen 1 ^ ^s biasing control transistor is connected and a control invention with individual

./,1SiStOi-IKSiUt _{n A} "_ _{stalnino dlPSes} , / tlTfeine schematic representation of a connection ,! ^^^ * ^ ^ -ichtrdaß the connection for <~ ^^^^ fire device has discharge capacitors, the F. g 3 une ™ ^ _en . _Tra ^B _nsistO r structure with .n-

j.-wcils parallel to a non-linear Slrombegren- view e ne ^ r Multrzel ^

, ", Circuit are switched. ^d Tfferne mcT-scale perspckt.v.sche

I-ine another advantageous embodiment of the line-> 5 V 1 g-4 a nicm. m _{p} presentedcUlc} n

• nasverstäikers consists in the fact that every Strombe- representation of a luis oe

^, ntungsschakung has a resistance which ^H ^ ^lte f ^l ™ ;. _tm " _Bstab s _e true top view of the I ', row to the emitter connection of the control transfer, g. Se .ne nich mL ^ « ^a -;, _{and the Metalh-}

\ * T is switched. Another cheap next-zone difference.ch er learning afc; Wung of the power amplifier "gives itself dadu.ch ₃ o sization" ^^^ true perspective _ti; ,, ß each current limiting sound with its train- Fig. 6 a ni _{part of} , " _F , _p . 3

The power transistor is united via a mechanical cut

I myself, did «, which is connected to the head (Slüttleiter). ^ posed S. ™ ktur ^ ^. ^ ^ _k ,

Further advantages of the power amplifier * result ■ _U s lunktion the operating frequency, for there in

. . ■ .i "n i;" UioMorpMirirhinnc a throttle- 35 n-Mii.i '»' s

"Aclivom Emiuer of jwriligjn Le - .5 _{Anoldnuni" a} ch of E.fmdung

wmmmmm

Ciigahertz. dependent chosen, st. that they are about ^ ^ _{n known} non-linear Voders ^

_{extends by} ¹⁰ to ^, and that the resistance, _Bnsis .collector distance e »" es ^ ndm ^ eistungs-

5 6

Time constant of each of the transistor cells. Graze over it is determined. It has been found that, in C operation, a single diode is generally connected in series with each of the current limiters with the optimum value of this width X, which corresponds to the maximum output power, to prevent a reverse current which is otherwise not the same value of X , which corresponds to the maximum of the non-linear resistance of the base-collector power gain. Hence there is quite a stretch in which the current limiter would be limited. Generally at a certain frequency at least So that the alternating current component of the current has two optimal values of A ', each of which is not attenuated by the maximum, is to correspond to each current power amplification and the maximum output limiter, including any power that may be present, with the range of values Diode, a bypass capacitor connected in parallel. io is defined by X between these two limits. In a particular arrangement of this invention this will hereinafter be referred to as the optimum range for a number of RF transistor cells in one performance.

individual silicon wafers. The lower for the maximum power gain and the

Limit of the high frequency should also is the at least one order of magnitude larger than the 15 conductivity determining concentration of Ver-reciprocal of the thermal time constant of the transit impurities in the η-zone in the npn ^ n-transistor cell in the silicon in the following always maximum output power -Piece. In typical sistor to the width X of this zone in the optimal Be-way, the high frequency is at least 100 Mereich for the power related. It is therefore also gahertz, the thermal time constant depending on the value of the frequency of the current, being 10 " ⁷ seconds. In addition, the high frequency between the emitter and the collector does not exceed the value of about 10 giga- des npn n -Power transistor flows, hertz, whereby this frequency is the upper frequency limit at which a considerable gain in power can still be achieved

Cell from its nearest neighbor cell in the silicon F i g. 1 shows four npr.-HF power transistor cells,

slice determined. This distance should be at least the ones marked 10.1 to! 0.4. They should be twice larger than the largest dimension, advantageously all being substantially the same. single cell. Each cell is connected in series with one of its collector. the external collector connection takes the form of a single non-linear current clamp, the mi; C is designated. The electric limiter owns. Base connections, r. to ■ '■. this power transistor

The individual non-linear current limiters 10.1 to 0.4 sin; t are also connected to one another 1: ul itself through a corresponding number of support forms the gcmcinsam.cn base contact connection. "-! - ladder control transistors. Together they are 35 rather mii B be,: v; cimoi iv .. Between each of the Emi: i> -rwith the individual series resistors in integrated connections? to C _{4 of} these power transistors ifl.l techniques. the support conductor are electrical vüu to 10.4! nevertheless \ remote Emitterkontaktanschn ^. compounds which is part of a Halbleitervorrich- with Ji bc / ci-ine!, the irrntung each form and further comprising a mechanical support control transistors W \ Connected to 11.4 . They are nowadays used in industrial production. 40 Alternative is also possible to use as a power supply to a large extent. Their manufacture sistorer.HV: h .; - ^ U pnp types to be used in is in the USA.-Patcntschriften 3,287,612 and this a '· ώ ^....: .-- ώ,' e!.. described Sieuertransistoren Πι> 3335338 this current limiter are just 11.4 ^ l ·: ; vn; <■ ·.!, - i-insulation type, ti. i '. connected to the power transistor cells, so that the Leisiunasia; ^:, ^; u;, d the assigned stc-uasie as the respective bias control _{circuit for 45} transisuv iahen c: «\ v'ekhe» sign «. T> r ^ ^; i every power transistor cell on the silicon wafer j _s t. that ü; e Su j:.: - iri-iorcn 11.1 to 11.4 eber - .. i ^; : - to serve. Both the silicon wafer, which is essentially silicon 2!?: Eh. Do you serve the limited? The power transistors contains, as well as the support of the current diirchj Front power transistors U>'\ conductor control circuits are on a ceramic to 10.4. Each r, stiere, up to e _{K is} attached to the power Iran base material, which is attached to suitable 50 sistors 10 I to 4 with the collector of the in: r locations with metal layers as well as with layers of assigned St. Nieriransislors 11.1 to 11.4 jcweii : electrically insulating dielectric material connected via a certain diode 12.1 to 12 4 isi. One of these metal layers serves as a common These diodes should also essentially be a cleid coating for all discharge capacitors for the. It is special in this context: high frequency. The other Metallscnicnten ₅₅ are desirable if they block the current through the Lei as external contacts for the support wire Steuerschal- stungstransistoren i i0 to 10 4 when de obligations and the silicon slices. The dielectric C operation is taken into account. The polar layers are used in the bypass capacitors as the diodes 12.1 to 12 4 are chosen so that the dielectric. The bias control circuits flow a current through transistors 10 1 through 10. ' themselves are connected to an adjustable voltage source 60 in the opposite direction to the external reverse bias voltage, ie of about 2VoIt for setting a suitable voltage source applied to the collectors of these transistors, ver bias voltage. prevent. In other words, the Dioriei allow

In addition, in each individual power 12.1 to 12.4 a current flow only in the same) transistor cell in the slice the value ranges direction in which the minority carriers in de for the optimal width X of the n zone of an npn n- 65 base of the power transistors 10 1 to 10 4 Fließer power transistor with the aid of mathematical are a injected from the emitters there the Tran analysis of Hochfrcquenzlcistungsverslärkung and sistoren 10.1 to 10.4 are advantageously i of the output power, as more fully explained in a sufficiently large distance from each other ANGC

so that a thermal insulation is guaranteed the conductivity type must match the polarity of the

is. That is, the heat particles from the tranquility sources 22 and 23 are reversed. In each

sistors mainly to the coolers, z. B. cold trap but appear the desired enhanced

sheet metal or the like (not shown) takes place and not signals via the load impedance 24.

to the other transistors. 5 For a typical operation at 4 gigahertz are

The base connections of the control transistors 11.1 to the control transistors 11.1 to 11.4 in an advantageous 11.4 are interconnected and form a way using support technology. Furthermore, the external contact £, which is seated at the same time as the discharge capacitors 13.1 to 13.4, has a hküve emitter contact connection of the power transmission capacitance of 40pF, and the resistors 14.1 to sistors 10.1 to 10.4 . The capacitors 13.1 ₁₀ 14.4 have a value of 100 ohms. Finally up to 13.4 are essentially the same and between them the throttle 15 has a value of 4 nanohenries. The emitter connections e _x to e _{t of} the power transistors 10.1 to 10.4 are each designed so 10.1 to 10.4 and the base connections of the control that they are about 0.1 watts of HF power connected to transistors 11.1 to 11.4 . (This base 4 gigahertz can process,
g terminals are connected to the external Emitterkontakl- _l5 F i. 3 shows a special arrangement of the electrically equivalent in anschlub £.) The condensa- F i g. The circuit shown in i, which however do not serve as diverting capacitors 13.1 to 13.4 , is shown true to scale. Furthermore, there is no battery for the high frequency. The high-frequency currents, 16. The entire circuit arrangement is attached to one of the control transistors 11.1 to 11.4 or the ceramic carrier 31. The control tran diodes 12.1 to 12.4 are supplied, therefore bypassing ₂₀ sistors 11.1 to 11.4 (of which in Fig. 3, however, the control circuit. Only 11.1 and 11.2 are shown) are with the

The emitters of the control transistors 11.1 to 11.4 are electrically connected via supporting conductors. One is each with essentially identical resistance metal layer 32, which is connected by the metallic capacitance stands 14.1 to 14.4 . The remaining presence coverings 35.1 to 35.4 by means of an insulating layer circuits of the resistors 14.1 to 14.4 are is together ₂₅ 33 separately, the bypass capacitors forms 13.1 connected and together with a choke coil 15 to 13.4.

and a variable DC voltage source 16 in the choke 15 consists of a zigzag series connected and with the Emitterkontaktan- metal layer, which ends at the terminal 17. The support closure £ connected. The connection 17 between the conductors 41,42 and 43 of the control transistors 11.1 to 11.4 voltage source 16 and the choke coil 15 is _{attached at 30} to the connection £, the choke 15 and the production of the circuit with a special capacitance coverings 35.1 to 35.4 and transmitter Execution that is still in connection with an electrical connection of these control transistors F i g. 3 will be used. The choke - with the rest of the circuit,
Coil 15 ensures that essentially the power transistors 10.1 to 10.4 are all high-frequency currents flowing along a direct path, ₃₅ a common monocrystalline silicon disk which runs from E to the bypass capacitors, with a common conductive layer 34. This avoids that the high-frequency integrated current through the battery 16, the resistors 14.1 ends in a collector contact connection C. The conductors 36.1 to 36.4 connect the emitters to 14.4 and through the emitters of the control transistors contact strips e to e _K this power transistor 11.1 to 11.4 is called. It is typical for the circuit, ₄₀ cells 10.1 to 10.4 each with the capacity load that the electromotive force V of the battery 16 35.1 to 35.4. The power transistors have is set ebenauf 2 volts with a polarity that if a common electrical base layer 37, a forward bias to the emitter that applies through the conductor 38 to the common Basisder control transistors 14.1 to 14.4. The port B is connected.

maximum permissible direct current through, for example, ₄₅ To produce the in F i g. 1 shown scarf

The power transistor 10.1 is preferably a ceramic carrier 31 with the aid of the drawing

associated control circuit (which is selected in the present _au s aluminum oxide or beryllium oxide

Example the resistor 14.1, the transistor 11.1, which is about 1.5 cm thick and as a substrate for you

the capacitor 13.1 and the diode 12.1) are used like the entire circuit, whereby this one guu

wishes to be limited to a value of about - £ ■, with 5 ° mechanical strength a good heat dissipation

«And provides good electrical insulation. hm <

R is the resistance of resistor 14.1 . As a result, conductive layer 32 made of a good electrical

Known effects can be the direct current in the conductor, such as aluminum, is on the dei

Power transistors 10.1 to 10.4 tend to deposit ceramic base 31 and serve al!

as soon as V increases, this value - £ - to exceed. 55 common deck for the discharge condenser

⁶ Λ 13.1 to 13.4, which in F ι g. 1 are shown. It is

However, for reasonable values of V, this increase is typical of this layer 32, that it is 0.3μ thick

only moderately. It is made on the ceramic base 31 with the help of «

F i g. 2 shows, for example, how those with E, B and C deposited a 0.05μ thick titanium layer

in FIG. 1 designated connections in a full 6o which is known to serve for adhesion. To manufacture

permanent circuit interconnected to the desired external shape of this layer. 3ΐ

must, so that they become high for the reinforcement of after the precipitation of the same on the dei

frequency signals of a signal generator 21 over the entire surface of the ceramic base 31 be ·

can be turned. The polarities of the same known photolithographic and selective etching

Voltage sources, bias sources, batteries 22 65 drive used.

and 23 are in FIG. 2 for power transistors 10.1 An insulation layer 33 is then deposited

to 10.4 of the npn conductivity type. When hitting or by oxidation of a previously

the use of power transistors made of the pnp- battered metal layer to the di-

9 10

Elektrikum of the discharge capacitors 13.1 to 13.4 achieved isolation between the cells. That means to educate. It is essential here that the insulation that the temperature of a cell is not produced by the temperature layer 33 by first influencing the temperature of another cell. Tantalum layer of about 0.3 μ thickness is deposited on the conductive layer 32. Then the 5 supporting conductor control transistors are selectively tied to a depth of 0.2 «

anodized to the insulating tantalum oxides that are known- F i g. 4 shows a perspective view, not to scale, true to a relatively high dielectric constant, of the underside of a typical Slütz seat. Then the common conductor control transistor 11.1, which is shown in FIG. 3 dareexternal base contact connection B of about 2.5 mm ² io is provided, including the diode 12.1. The support on a layer of electrically highly conductive material conductors, which are self-supporting, a stability in itself such as deposited from gold. The self-exhibiting conductors 41, 42 and 43 offer both the same applies to the external emitter contact connection E. mechanical strength wedge, as well as electrical connec-

Likewise, a layer 34 of electrically high fertilize, whereas the conductor 44 is only an electrical one

conductive material, such as gold, which enables connection to the 15.

ceramic substrate 31, is deposited, as FIG. 5 shows a non-scale ⁿ etreue supervisory common terminal for the ohmic collector on the underside of the Transistörs "n.T'und" the support terminal C of the power transistor 10.1 to 10.4. conductors 41.42 and 43 and the conductor 44. The stiicheiten The choke 15 is also made from a layer of lines 41 A and 41 B showing the cutting line on which electrically good conductive material, such as _ao the support conductor 41 by an insulating passive gold, in that this passes through in a zigzag layer (not shown) and a pattern is formed on the ceramic substrate 31, in contact with the semiconductor material 44, in this case silicon. The choke coil 15 has here produced about. Similarly, the dashed lines show three or four right-angled loops. The capacitance lines 42.4, 43 Λ 44 4 and 44B a similar coverings 35.1 to 35.4 also consist of an _a5 section for the corresponding conductors 42, 43 and 44. Layer made of an electrically good conductive material, the broken center line 45 shows the outer, for example gold . The area which the loop contours of the η-conductive silicon semiconductor which covers is about 0.5 mm ² . forms the emitter zone of the transistor 11.1 . at

The elements E, B, 15, 17. 34 and 35.1 to 35.4 typical values, this emitter zone is a 0.3 μ

are created at the same time in that the layers are 30 nm thick to a specific surface resistance.

the appropriate positions using the known stand of 20 ohms. The emitter zone is right

Angled dimensions of about 10-7 Ω / l are reflected in the photolithographic technique. L only

the one, which then follows processes through which the un- a specific surface resistance of 20OLm

desired metal to be selectively etched away. For example, it should be understood that the resistance, according to

wise is the total surface of the ceramic sub- 35 over the thickness of the layer and divided by the

strates 31, on which the layers 32 and 33 are already thickness du layer with a conductor length and ci-cr

placed, confused about 20 ohms across their entire conductor width of 1 cm each.

Surface with a 0.05 // thick titanium layer. Another aspect is "the specific."

covers (for adhesion). This is followed by a surface resistance of 0.5μ a _{r of} a diffusion area ■■>'"·

Gold layer. Then the already_er- 4c widths H and Je; Lance L between two connection η

mentioned photolithographic and selective etching, * " _w

Processes carried out. ^ül ' ^{rch the B} "idnmg _Ci - R ^. given, where R

The manufacture of the control transistors 11.1 to 11.4 determine the resistance of the area between the two

is described in detail below. You will be indicating terminals. The dashed line 46 shows! ;; i

mechanically and electrically with the help of known 45 similar ways the outer contours of the typical ·. ".!

Techniques such as thermocompression p-type base region of transistor Jl 1 Di-se

connections, at the desired points both base zone has a specific sheet resistance

with the capacitance coverages as well as with the connection of 700 ohms. a strength of about 0 15 11 and right

End E and a connection of the throttle 15 angular dimensions of 70-80 "'it encloses the

bound. Likewise, the power transistors 10.1 are 50 emitters 45 all around. The broken center line 41

to 10.4, as described below, represents a p-lighting resistance zone mi

represents and, as in F 1 g. 1 shown on the layer 34 a specific sheet resistance of 50 ohms

attached. The emitter _{contact strips 1} to e _t, which form the resistor 14.1 , are interrupted.

Power transistor cells 10.1 to 10.4 are on Lime 48 represents the outer contours of another

the corresponding capacitance coverages 35.1 to 35.4 55 p-lcitenden diode zone represent the one more specific

each with the help of gold conductors 36.1 to 36.4 surface resistance of 50 ohms besS and the sod!

bound. The common electrical base contact 12.1 forms because it makes contact with the silicon layer 4 <

layer 37, which is formed by the connection of each of the opposite Shgke typT 7nnerha, |

Base contacts O ₁ to b <of the power transistor cells of the diode zone 48 have Dkf ShS "eggs

10.1 to 10.4 is formed, is with the connection B 60 layer 49 consists of sliding Sm which

connected by means of a gold conductor 38. in an advantageous manner you ch "Sxia ί accruals.

It must be mentioned that it is beneficial to have a strength of IT and an iSfischi

the distance between adjacent transistor cells resistance of 4 ohms - cm here will be lower

10.1 to 10.4 twice as large as the largest ab- this layer 49 is located? himself Se

to make measurement of the single cell. The largest ab- 65 layer (not shown)

Measurement of a single cell is characterized by the physical resistance of 0.005 ohm · cm

Extension of its emitter contact strip, for example silicon, on which the layer 4

wise _elf defined. In this way a thermal became.

11 * 12

To form the transistor 11.1, an η-conduct- The outer contour for each base zone of the power of the nionocrystalline silicon wafer of transistor cells IO 1 to 10.4 insulates 0.005 Ohm -cm and a thickness of 125 μ as a sub- the base- Zones against each other. This happens, however, for the epitaxial growth of the silicon only insofar as a line from the base zone of a layer 49 with a thickness of 4μ and a resistance 5 cell to the base zone of another cell through the stand of 4 ohms Cm used. Thereafter, the diffused p-conductors zone 63 itself takes place. However, all of the Büsis zones 46 by diffusion of boron into the layer base zones are mutually produced via the geir.ein-49, with the boron being the acceptor uni-same base contact layer 37, v * ie in FIG. 3 illustration serves. Then the emitter zone 45 is connected through represents. In this way, the capacity diffusion with phosphorus, as a donor impurity. OK between base and collector of all service lines. The resistance zones 47 and the diode transistor cells 10.1 to 10.4 at a minimum value zone 48 are advantageously equalized.

Early diffusion of boron through suitable masks, the emitter stripe zones 64 are then themselves

as known, manufactured. In those cases in which the silicon wafer 61 with phosphorus as a donor

the diodes 12.1 are not required, the 15 contamination can be down to a depth of 0.3 /; in-

Diffusion of the zone 4% during the diffusion pre-diffused. You will receive a specific one

gangs can be suppressed using suitable masks. Surface resistance of 20 ohms. The emitter and

In all diffusion processes, common Ma> base contacts, for example ^ ₁ and O ₁ . will

coating techniques and customary photoresistive tech-

Techniques used with advantage to contact the outer contact layer 37. As ir. F i g. 3 is shown, from AIu-

Luren the zones of the desired conductivity type minium using known methods, for example

map. Evaporation, formed. Every finger in the emitter

and basic contacts, for example e _l and /> ,. has an approximate dimension of 2-50μ with a

HF power transistor cells 10.1 to 10.4 ₃ - approximate distance of 2μ between successive and interlocking emitter and

F i g. 6 shows a personal base contact, which is not to scale.
tivic sectional drawing of part of a typical
npn-n power transistor 10.1, which is already shown in FIG

was shown. It goes without saying that an npn-n-Sirnk- 3c identifier of the n - zone
for the special case of an npn transistor structure. A η-conductive monocrystalline silicon IIIa ^: b- In the working frequency range between about 0.5 and conductor substrate 6i with a relatively high conductivity, curve 71 in FIG the n ~ zone of the leia also serves as the substrate for the epitaxial layer 62 made of stungstransutor cells 10.1 to 10.4. applied over lightly doped n-type silicon. This of frequency F. for maximum power gain. The leading area serves as a spacer layer for the while curve 72 in FIG. 7 the maximum value of the collectors of the power transiS'Oren. The zone 63 of .V for the maximum product of output power consists of p-conducting silicon and serves as the base times external load impedance (P ₀ -Z ;.) shows. With lei zone. The zones 64 consist of η-conductive silicon 40 power gain is »the ratio of output and serve as an emitter. A passivation layer 65th power to input power meant. The curve 71 usually a silicon oxide layer, is used to protect _{can näherun "swcise dl! Rch dje G} i _erro χ ₌ 30 of the transistors from their surroundings. The longer- - F- like extensions of the emitter contact strips C ₁ and are specified. The approximation for curve 72 is the finger-like extensions of the base _{contact- * 5 d} , _{jrch dje G! Eichun £ x =} ί * ~ _eccbcn . _{Bd djes £ n} conclusions reach through the oxide and - F - - touch the semiconductor. Equations must be given .V in μ and F in GHz. at

To form the transistors ΙΟΙ to 10.4 , a given operating frequency r is the value of Λ 'a silicon wafer 61 with a specific resistance of 5 · IO ~ ³ ohm · cm and a thickness 50 at the maximum value of P ₀ · Z _L. Therefore, of about 125 μ as a substrate for the epitaxial growth, a compromise is necessary, which of the growing layer 62 is used. This layer 62, relative importance of the desired maximum, is given a thickness of 4 μ and has a pure output gain compared to the maximum concentration of a donor contamination in the output output, which depends.

Order of magnitude of 10 ⁺¹⁶ per cubic centimeter, such as 55. In any case, it is for working frequencies in the

will be explained in detail later. Thereafter, the range from about 0.5 to 10 GHz becomes advantageous if a

the p-zone 63 for each transistor cell 10.1 to 10.4 definitive rule for determining the net con-

in the epitaxial layer 62 by means of suitable mask centering of the predominant donor impurities

and is followed by means of suitable methods to a depth of the η zone in the npn-n structure

diffused by 0.4 μ. It receives a specific 60 This rule states that the concentration dei

Surface resistance of 700 ohms (measured after the contamination should be selected so that see the

subsequent emitter diffusion). As the predominant resistance on ~ the n ~ -zone, measured in ohm · cm

Acceptor impurity for this diffusion which is equal to odd greater than approximately
Base region is boron used. The outer contour

this zone 63 is for each transistor cell 10.1 to 10.4 6 _{5 e} n ~ ä 0.5 (A ") ¹ ·· (\)
rectangular shaped with an overall dimension of

about 40-5Oa to completely encircle the machi, the magnification in no way being dci

Emitter stripe zones 64 which are then formed. By a factor of 5. Here, too, is the width;

to measure μ. The relationship defined in equation (1) is in FIG. 8 shown. Since the width of the diffusion zones which form the emitter zone 64 and the base zone 63 is substantially smaller than the width X of the η zone, it follows that X is approximated

can be called the width of the entire n ~ epitaxial layer 62 in which the base and emitter regions were diffused. This approximation is useful in calculating the preferred resistance of the n ~ zone useful according to equation (1).

For this purpose 2 sheets of drawings

Claims (1)

1 . vKnpt that each of the performance is characterized by: that ^ j ^ ^ ... transistors an npn n- «™ * IU. . Basis.Zone claims. ^^? oIffjAtauntoo »c (e2) and one 1. Power amplifier for high-frequency SchwinglieX connection zone np _P n <in particular, eighth below 0.1 GHz). 5 ^, _#lineet -, _ns ; _slO ren a