DE1865968U - ELECTRIC THIN FILM CAPACITOR. - Google Patents

Description

Electrical thin film capacitor

Me firing concerns an electrical thin film capacitor, which is made of thin, gate pulls under 6 / U strong, Non-self-supporting processable tapes, which consist of layers of lacquer and metal layers is.

Capacitors with very thin strips as a dielectric are made by applying layers of lacquer to auxiliary carrier foils manufactured after they have been provided with a metal coating, before or during manufacture of the capacitor winding can be pulled off the auxiliary carrier film. The usual procedure is that one is on the auxiliary carrier film, which has preferably been pretreated to achieve a suitable adhesive strength has lacquered a first layer of lacquer, applied a second layer of lacquer of the same type to this first layer of lacquer whereupon the occupancy is established by steaming

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is provided. When making the assignment, the fine metal parts into the pores and holes of the paint film and fill them out. During operation of the capacitor, a lot of metal tips are formed on these pores high electrical stress levels, as a result of which the dielectric strength of the capacitor is greatly reduced. So far these spikes do not directly form short-circuits between the assignments of the capacitor, they will after The digestion process carried out during the manufacture of the capacitor is also not included and is therefore not eliminated. First In continuous operation, defects form at the tips due to the excessive field strength, which leads to insulation waste to lead.

To avoid these disadvantages, an electrical thin-film capacitor, made of thin, preferably less than 6 / U thick, non-self-supporting tapes made of Lacquer layers and metal layers consist, is built up, proposed, in which, according to the innovation, the capacitor is made up at least two strips of a first layer of lacquer each, a regenerable thin metallic coating vapor-deposited onto this lacquer layer and a second over the coating arranged second lacquer layer is constructed.

To create good insulation between the opposing

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With the pin assignments, an edge strip is preferably left free when the assignments are applied, and the strips are arranged in the capacitor with assignments that are offset from one another. The second lacquer layer applied to the metal coating is pointless and therefore forms a dielectric with high dielectric strength. It is expedient to select the first L _a cksehieht, which is penetrated by the following Metallbedampf ung of peaks as thin as humanly possible and the second ink layer correspondingly stronger. To produce capacitors with a further increased dielectric strength, an unmetallized dielectric film can also be wrapped between two three-layer films according to the invention.

In the case of the thin film capacitor according to the invention, without an additional expense to obtain a capacitor with greatly improved properties. Is is used in the manufacture only the order of the process steps changed.

The figures can be used to further explain the wages.

Fig. 1 shows a three-layer film with the previously known one usual structure. On the auxiliary carrier film 1 is a first Lacquer layer 2 and a second lacquer layer 4 on top

brings what the metal coating 3 is.

fig.2 shows a manufactured according to the characteristics of the invention Three-layer film. This is located on the hoof support foil 1 a first thin Laeksehicht 2, on this the metal coating 3 and above the second, preferably thicker Lacquer layer 4

! ig. 3 shows two superimposed three-layer films 5 and 6, as they are obtained by detaching them from the arrangement shown in FIG arise from the auxiliary carrier film 1. The metal coverings 3 are arranged offset from one another in the same way as in the finished wound capacitor.

A review of the capacitor according to the innovation showed favorable electrical properties that exceeded all expectations. The insulation value of a capacitor in accordance with the innovation was approximately 2 actuator 2 higher than that of one capacitor manufactured according to the known method. While the known capacitors when applying overvoltages show a sharp drop in their insulation resistance, the insulation winding status of the innovation according to the invention remained Capacitor constant even in the event of overvoltages. The loss factor remained in the same way even with increased voltages in contrast to the behavior of the thin film capacitors of the known structure unchanged. From this it can be concluded

that the contacting of such an occupancy enclosed between two layers of lacquer is not only flawless succeeds, but surprisingly "is significantly" better than the coverings exposed in the known structure.

Claims (4)

P.A.784 048-7.12B2 f protection claims 1. Electrical thin film capacitor, made of thin, ■ preferably Processable under β / α strong, not self-supporting Tapes made from layers of lacquer and layers of metal consist, is constructed, characterized in that the capacitor consists of at least two strips of one each first lacquer layer, a regenerable thin metallic coating vapor-deposited onto this lacquer layer and a second lacquer layer arranged above the covering is built up. 2. Electrical thin film capacitor according to claim 1, characterized in that the first lacquer layer is thinner, preferably is much thinner than the second layer of lacquer. 3. Electrical thin film capacitor according to claim 1 or 2, characterized in that the occupancy with release an edge strip is applied to the first layer of lacquer and the tapes with opposing coverages are arranged in the condenser. 4. Electrical thin film capacitor according to one or more of claims 1-3, characterized in that between - 7 - two each made of two lacquer layers and one metal layer existing three-layer film an unmetallized dielectric lolie is arranged. '/..·;.>■-'χ* box underlay (description and Schirizar.spr.) Irf die r.:'^zi e ^! - "- _: & c <zi;te;;'? freeze! ·,' er · fe * -.:·■.■ ,·.-;; '-: L ^:. ~ ": '; - <νν.' a ^ n * ^ ^{c 1} H ^- hey Et ^ gii;;; ir ^ d - - ^Λ" '. Di3 computing.? - ■ Y: *: - ,. ^: icf! e: ngeretchten Unfenagen are in the arn.'sclee; *. S "e can; j."'- i.:-: i ■ ·; - ^u -. ι- ■ '■: -.''z' --- zn inieresses can be viewed free of charge. Fofokci-i ^ -i <, can also be found on request. r.i3C! ti'3 «i delivered at the usual prices. German Patent Office,