DE1815476B2 - Fixed-valve memory - has intersecting word and read lines with magnetic material coupling elements - Google Patents

Fixed-valve memory - has intersecting word and read lines with magnetic material coupling elements

Info

Publication number
DE1815476B2
DE1815476B2 DE19681815476 DE1815476A DE1815476B2 DE 1815476 B2 DE1815476 B2 DE 1815476B2 DE 19681815476 DE19681815476 DE 19681815476 DE 1815476 A DE1815476 A DE 1815476A DE 1815476 B2 DE1815476 B2 DE 1815476B2
Authority
DE
Germany
Prior art keywords
word
lines
read
read lines
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19681815476
Other languages
German (de)
Other versions
DE1815476C3 (en
DE1815476A1 (en
Inventor
Volkmar Dipl.-Ing. 8000 Muenchen Friedrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19681815476 priority Critical patent/DE1815476C3/en
Publication of DE1815476A1 publication Critical patent/DE1815476A1/en
Publication of DE1815476B2 publication Critical patent/DE1815476B2/en
Application granted granted Critical
Publication of DE1815476C3 publication Critical patent/DE1815476C3/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements

Landscapes

  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Read Only Memory (AREA)

Abstract

At the intersections of the word and read lines there are coupling elements of magnetic material. For each memory plane the parallel word lines on the front side of a foil intersect with the parallel read lines on the back side of the foil. At the intersections of the word and read lines the read lines are led for a short way parallel to the word lines in such a way that in an additional memory area the data can be defined only by the parallel course of read lines and word lines. In the additional memory area two pieces of a read line which are parallel to a word line are so connected that the voltages induced on them have a synonymous effect on the relevant read line.
DE19681815476 1968-12-18 1968-12-18 Read-only memory Expired DE1815476C3 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19681815476 DE1815476C3 (en) 1968-12-18 1968-12-18 Read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681815476 DE1815476C3 (en) 1968-12-18 1968-12-18 Read-only memory

Publications (3)

Publication Number Publication Date
DE1815476A1 DE1815476A1 (en) 1970-10-08
DE1815476B2 true DE1815476B2 (en) 1975-03-06
DE1815476C3 DE1815476C3 (en) 1975-10-23

Family

ID=5716631

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681815476 Expired DE1815476C3 (en) 1968-12-18 1968-12-18 Read-only memory

Country Status (1)

Country Link
DE (1) DE1815476C3 (en)

Also Published As

Publication number Publication date
DE1815476C3 (en) 1975-10-23
DE1815476A1 (en) 1970-10-08

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)