DE178456C - - Google Patents
Info
- Publication number
- DE178456C DE178456C DENDAT178456D DE178456DA DE178456C DE 178456 C DE178456 C DE 178456C DE NDAT178456 D DENDAT178456 D DE NDAT178456D DE 178456D A DE178456D A DE 178456DA DE 178456 C DE178456 C DE 178456C
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- shaped
- chemical compound
- production
- mainly consists
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 241000182341 Cubitermes group Species 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
Landscapes
- Silicon Compounds (AREA)
Description
KAISERLICHESIMPERIAL
PATENTAMT.PATENT OFFICE.
PATENTSCHRIFTPATENT LETTERING
KLASSE 21 c. GRUPPECLASS 21 c. GROUP
GEBRÜDER SIEMENS & CO. in CHARLOTTENBURG. Verfahren zur Herstellung von geformten festen Körpern aus Siliziumkarbid.BROTHERS SIEMENS & CO. in CHARLOTTENBURG. Process for the production of shaped solid bodies from silicon carbide.
Zusatz zum Patente 176001 vom 4. Januar 1905.Addendum to patent 176001 of January 4, 1905.
Patentiert im Deutschen Reiche vom 18. April 1905 ab. Längste Dauer: 3. Januar 1920.Patented in the German Empire on April 18, 1905. Longest duration: January 3, 1920.
Gemäß vorliegender Erfindung wird das inAccording to the present invention, the
dem Patent 176001 beschriebene Verfahren derart ausgeführt, daß in den Ausgangsmate-the method described in patent 176001 designed in such a way that in the starting material
: rialien außer freiem Silizium noch Kohlenstoff in solcher Menge enthalten ist, wie es durch die Formel C2Si2N verlangt wird.: In addition to free silicon, materials contain carbon in the amount required by the formula C 2 Si 2 N.
Der fertige Körper besteht dann aus einer sehr festen und gut leitenden .Masse, die der Hauptsache nach nur aus der chemischen Verbindung C2Si2N besteht.The finished body then consists of a very solid and highly conductive mass, which mainly consists only of the chemical compound C 2 Si 2 N.
Der Kohlenstoff braucht dabei keineswegs in freier Form verwendet zu werden, er kann vielmehr in Gestalt eines verkohlbaren Bindemittels oder zum Teil auch, an Silizium gebunden verwendet werden.The carbon does not need to be used in free form, it can rather, in the form of a carbonizable binder or, in part, also bonded to silicon be used.
Die Grundmasse wird im übrigen in ganz derselben Weise, wie es im Hauptpatent beschrieben
ist, geformt; die geformten Körper werden in Brennofen gebracht und in einer
stickstoffhaltigen Atmosphäre so lange erhitzt, bis die vollständige
CtSitN erfolgt ist.The basic mass is otherwise shaped in exactly the same way as described in the main patent; the shaped bodies are placed in a kiln and heated in a nitrogenous atmosphere until they are complete
C t Si t N has occurred.
Umwandlung inConversion to
2020th
Claims (1)
Publications (1)
Publication Number | Publication Date |
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DE178456C true DE178456C (en) |
Family
ID=442852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT178456D Active DE178456C (en) |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE178456C (en) |
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0
- DE DENDAT178456D patent/DE178456C/de active Active
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