DE178456C - - Google Patents

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Publication number
DE178456C
DE178456C DENDAT178456D DE178456DA DE178456C DE 178456 C DE178456 C DE 178456C DE NDAT178456 D DENDAT178456 D DE NDAT178456D DE 178456D A DE178456D A DE 178456DA DE 178456 C DE178456 C DE 178456C
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DE
Germany
Prior art keywords
silicon
shaped
chemical compound
production
mainly consists
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT178456D
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German (de)
Publication of DE178456C publication Critical patent/DE178456C/de
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon

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  • Silicon Compounds (AREA)

Description

KAISERLICHESIMPERIAL

PATENTAMT.PATENT OFFICE.

PATENTSCHRIFTPATENT LETTERING

KLASSE 21 c. GRUPPECLASS 21 c. GROUP

GEBRÜDER SIEMENS & CO. in CHARLOTTENBURG. Verfahren zur Herstellung von geformten festen Körpern aus Siliziumkarbid.BROTHERS SIEMENS & CO. in CHARLOTTENBURG. Process for the production of shaped solid bodies from silicon carbide.

Zusatz zum Patente 176001 vom 4. Januar 1905.Addendum to patent 176001 of January 4, 1905.

Patentiert im Deutschen Reiche vom 18. April 1905 ab. Längste Dauer: 3. Januar 1920.Patented in the German Empire on April 18, 1905. Longest duration: January 3, 1920.

Gemäß vorliegender Erfindung wird das inAccording to the present invention, the

dem Patent 176001 beschriebene Verfahren derart ausgeführt, daß in den Ausgangsmate-the method described in patent 176001 designed in such a way that in the starting material

: rialien außer freiem Silizium noch Kohlenstoff in solcher Menge enthalten ist, wie es durch die Formel C2Si2N verlangt wird.: In addition to free silicon, materials contain carbon in the amount required by the formula C 2 Si 2 N.

Der fertige Körper besteht dann aus einer sehr festen und gut leitenden .Masse, die der Hauptsache nach nur aus der chemischen Verbindung C2Si2N besteht.The finished body then consists of a very solid and highly conductive mass, which mainly consists only of the chemical compound C 2 Si 2 N.

Der Kohlenstoff braucht dabei keineswegs in freier Form verwendet zu werden, er kann vielmehr in Gestalt eines verkohlbaren Bindemittels oder zum Teil auch, an Silizium gebunden verwendet werden.The carbon does not need to be used in free form, it can rather, in the form of a carbonizable binder or, in part, also bonded to silicon be used.

Die Grundmasse wird im übrigen in ganz derselben Weise, wie es im Hauptpatent beschrieben ist, geformt; die geformten Körper werden in Brennofen gebracht und in einer stickstoffhaltigen Atmosphäre so lange erhitzt, bis die vollständige
CtSitN erfolgt ist.
The basic mass is otherwise shaped in exactly the same way as described in the main patent; the shaped bodies are placed in a kiln and heated in a nitrogenous atmosphere until they are complete
C t Si t N has occurred.

Umwandlung inConversion to

2020th

Claims (1)

Patent-Anspruch:Patent claim: Verfahren zur Herstellung von geformten festen Körpern nach Patent 176001, dadurch gekennzeichnet, daß dem Silizium so viel Kohlenstoff zugesetzt wird, daß der fertige Körper der Hauptsache nach aus der chemischen Verbindung C2SLN besteht.Process for the production of shaped solid bodies according to patent 176001, characterized in that so much carbon is added to the silicon that the finished body mainly consists of the chemical compound C 2 SLN .
DENDAT178456D Active DE178456C (en)

Publications (1)

Publication Number Publication Date
DE178456C true DE178456C (en)

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Country Status (1)

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