DE1762942C - Contactless electrical pulse generator or switch with a permanent magnet - Google Patents

Description

Ferrite plates serving as magnetic tentacles res field of sufficient S arke and zu_du.]

is arranged. An output signal from alternating Rieh- the biasing magnets in the area of the

tion is generated by a fire magnet, whose magnets are opposite to R.chtumjau ^den

magnetic axis acts transversely to the magnetic axis of the magnet. Achieve the wuene

Is directed and the strength is sufficient in Rieh- 5, then the R ^

development of the magnetic axis of the pretensioning of the switching magnet d.e PoIa .tat jumped

magnet is moved. The high magnetic resistance is used in this case state of the bias circuit requires a correspondingly strong bias magnet and thus also a strong control panel.

The invention is based on the object of providing a pulse generator or switch, in particular for

Control purposes to create, whose magnetic circuit in the subsequent ^^ J ^

a permanent magnet and at least one of them holds a so-called button that

Magnetic field sensitive semiconductor body contains 15 and works without contact.

did di ih Idki haft In the other A ^lttra

If one uses in this Fa1
Voltage generator as ^
voltage proportional to the
is, it results in a f
abruptly changing ^Ha P
both when enlarging the
with the subsequent ^^ J holds a so-called button hl btet

"Xwar

& _s ΐ also field ate too

Contains magnetic field sensitive semiconductor body

and in which the magnetic induction leaps and bounds can be changed by an external magnetic field.

This pulse generator or switch is intended, among other things, to control transistors or thyristors as well as relays, buttons, proximity switches, limit switches

.ag switch and pulse generator be suitable. The solution according to the invention is that

a permanent magnet with a small coercive field strength

and large remanent induction is provided and ten is so small that

that the size and / or direction of the control field .5 magnets normally

with the position or the polarity of a control magnet other ^ ™ ^{Bäumeneed 1 ™}

is changeable, the magnetic axis of which is parallel to the magnet '· » runs to the magnetic axis of the permanent magnet. The semiconductor body can only be of one

In the other
body especially m
are cheap) the
that the on the '^ .ß
Acting portion of Indukt.on

induction of the first magnet is magnetic coupling, zw.seκη ^d

ten is so small that the ™osters ^e

ht from

d h α. η

remen in one, η den

g the

as g

sieren and will
magnet called.
turn

in

gneüschen J trueur soleher

dependent ^ _f ^hote '

plates «font

being,

runs to the magnetic axis of the permanent magnet ^ P. The semiconductor body can only be influenced by one of the control magnets, which is moved in the direction of resistance to the magnetic axis of the permanent magnet. The influence of interference fields ddd ^h ^ ^b

is thus practically impossible.

This impulse generator or switch is referred to as "useful, tactless," because it is only useful when moving electrical switching contacts are not required in a particular way to operate it. It also works without contact, because it is sufficient to bring a magnet close to generate a pulse or signal at the output of the semiconductor body. Magnets with a rectangular hysteresis loop, so-called "rectangular magnets", are known. In the case of the pulse generator according to the invention, they should also have a low coercive field strength ^^^. Such switching magnets have, among other things, found a wide range of induction fields of application in the healing of magnetic memories. The device constructed using large or equal to Jieser solenoids helps to make things happen. To ^^ a certain minimum value of nungsmagiiet switched from the outside to s strengths acting control magnetic field only a signal magnet '' ^

when the induction of the control magnetic field is within 50 »"> "*« * ·

half of the solenoid opposite to that of the part of the

Remanent induction is directed. The device also has memory properties.

In addition to the switching magnet ^

another conductor magnet, a preload magnet, 55 gnetkmses can "z. ^{B d}

be provided, the sections of the magnetic le.tenaen with respect to the semiconductor body

magnetically parallel to the switching magnet in the Malri

gnetkreis is set. The second magnet should be

a high coercive force above the solenoid

and have a small initial permeability. at

the training of the facility with the additional

Bias magnets can be called magnetic

Coupling between these two permanent magnets

ten of the Maywt circle either very strong or very strong make weak.

In a first embodiment, the pre-

voltage magnet to the switching magnet in the direction of the remanent induction for as long as no external

" _s ^l magnetic field-dependent ernes'W *" has Mahnet

^ f3

An ™ _{u hen}

i characteristic

. _h ^ ₅ , _Fe id-

d e c

n Γ part of the Kenn _{k it}

_the shark egg body

Pre-plan ί the switching

T in

^ gneiSmU the semiconductor part of the M ^a ^ ^et ^ "* _small body and the V" ^ tension * mg β _of the magical wideband in the ^ ^

^Ma ^ ^e * ^re1 * '^ / ^ i ^ Design of the Querk ^{B d} u ^{ch Aus} ^ ^g _{des M t} .

The first

stands

. _{t exists} .

_ferritm a _B netischem work SSS? Rectangular ferrite _magnet be

^ Γ ferromagnetic oxide of 1 _Ha f _Bie iterkörper kan, was wide as the söge ^^^ _resistance with magne

_t . "l c _nPrr c _C hicht sein Also Hall voltage signal J« »» « ^s pern ^« ht se.n _ß ^ reversible. D.

g «are""^ P ^ ™ ^ _or . switching external, Jen magnetic circuit control ae

a ⁵ "l

Magnetic field can make both a movable, linear movable, so one can in principle e.g. rotatable permanent magnets as well as an arrangement according to Fig. Select 6a to 6d. the a ülcklromagnctcn be generated. Magnet 17 is there for example in the direction of the arrow

On the basis of the schematic drawing from FIG. 1, the arrangement with the magnet 10 can be moved, guide examples are further examples of the invention in the case of those indicated in FIG. 6a and explained by the symbols. bole NS marked polarities of the magnets

1 to 4, characteristics 10 and 17 are the inductions B _r and B ₀ in the area according to the components used are drawn qualitatively. of the magnet 10 is initially directed in the opposite direction and in FIG. 1, the magnetic field // area of the semiconductor body 13 is rectified in the abscissa. The lines (in Oe) and the magnetic induction in the ordinate symbolizing the (external) induction B ₀ (in Gs) are plotted. The curve 1 with the right are drawn in Fig. 6a and 6d in dashed lines to indicate that the angular hysteresis loop belongs to a ferrite, that at the large distance between magnets. The remanent induction B _{r of} such magnet 17 and magnet 10 a mutual impact can be between about 2 and 20 kGs and the flow hardly appears. If the coercive force // _r fluctuates between 0.01 and 80 Oe, magnets 10 and 17 according to FIG. 6b are connected to one another. The permeability of such magnets is in the sewing area, so the induction B _{0 is} also in the magnet area of saturation at about 1 Gs / Oc, while it circles so strong that it almost tion of its own (remanent) induction in the area of the steep parts of the hysteresis B _{r of} the magnet 10 z. B. exceeds and the ου is. The greater the remanence induction B i is to move magnet 10 from one remanence country to the greater is, of course, the jump from Λ B, to ao the other. The result of this transition β _r , thus also the signal that the semiconductor body is indicated in Fig. 6c. It is expressed in the fact that the semiconductor body 13 located in the area of action of the magnet, which is initially a very rigid one, emits. The kn induction (B ₀ + B,) emitted by the semiconductor body was suddenly exposed to the signal is the steeper, the closer the hysteresis _{approximates the only very small induction (B 0} -B,) from an ideal rectangular shape. as is set, since the own induction B, of the magnetin F i g. 1 is except the curve 1 with the curve 2 circle according to Fi g. 6c of the induction B _{0 of} the outer also the characteristic curve of a magnet 17 which can be used according to the invention in the region of the semiconductor body 13, the so-called preload, is directed in the opposite direction. If the magnet 17 is then wienungsmagnetcn, specified qualitatively. The Koerziliv- led away in the I'leilrichtung of the magnetic circuit, by virtue of such magnets with flat but wider hysteresis 30 so increases as shown in FIG. 6d, the dotted resis is substantially greater than that of the pre-induction B _a of the magnet 17 in the region of the Magnetic magnets. You can, for example, gnetkrcises again, so that the amount of between 300 and 3000 Oc. Magnets according to the magnetic field acting on the semiconductor body 13, such as curve 2, are distinguished in particular by the fact that it increases.

the product BH is substantially larger than the product 35 These ratios are with reference to FIGS. 7a to domestic product BH of the aforementioned ferrite magnets. 7c explained in more detail. In Fig. 7a is in the ordi-

In FIG. 2, the characteristic curve of a Hall voltage rate at the location of the semiconductor body 13 according to FIG. 6a is given qualitatively. FIGS. 3 and 4 to 6d resulting magnetic induction B _r show the corresponding characteristics of two magnetic = _{U ± B B _r) and in Fig. 7b and 7c of the Widcrfeldabhängiger resistors und'zwar Fig. 3, the R 40 stand ₁ (see. Fig. 4) indicated. In Fig. 7a characteristic curve of a resistance with magnetic and 7 c, the time ι is plotted on the abscissa, the barrier layer and FIG. 4 the characteristic curve of a resistance of the movement of the magnet 17 according to FIG. 6a up to the state with high carrier mobility. In all three 6d corresponds. As long as the magnet 17, as in Fig. 6a, Figures is removed in the abscissa, the magnetic induction B (in (is) 45 acting on the semiconductor body still because of the magnetic circuit according to the invention, acts on the half-liter body 13 only removed I "ig. 2 the ordinate is the Hall- the remanence induction B, of the magnet 10. This voltage U ₁₁ (in V), in Fig. 3 the resistance magnetic state of the magnetic circuit is in (in 12) and in Fig. 4 the Resistance R _F (in S2), Fig. 7a denoted by I. If the magnet 17 (like curve 3 in Fig. 2 is essentially a straight line, in I * ig. 6b) approaches the magnet 10, so that the Hall voltage V _s proportional to B is. in 50 of the semiconductor body overlap in the area of the resistance curves 4 and 5 g of F i. 3 and 4, the induction of both magnets until consisting only for smaller magnetic inductions ß resulting induction B _f when Point II suddenly a non-linear connection between opposites Point III falls back, ie until the magnet stopped and induction. 10 suddenly reverses its polarity. In Fig. 7 is as

For the sake of simplicity, the principle of a magnet according to the invention is assumed, for the sake of simplicity, that the circle is shown schematically in FIG. The magnetic circuit required to overturn the magnet 10 consists of a magnet 10 with external induction B _n just as large as the rectangular hysteresis loop and the soft magnetic induction B _{r of} the magnet 10. If magnetic parts 11 and 12 between which the magnet 17 is now again moved away from the area of the magnetically sensitive semiconductor body 13 in a magnetic circuit according to the invention, a gap is inserted. The resulting induction B _f on the semiconductor body is reduced in the area of the semiconductor body 13 caused by the magnet 10, and approaches the induction B, the induction B _{9 of} a movable external limit value -B,. The magnet 17 can, for example, be rotatable if the resistance value moves accordingly as shown in FIG. 5. His magnet 65 FMg. 7a from point I to gradually higher resistance through both the semiconductor body 13 as well as slandswcrtcn, in order then to drop abruptly from point Ϊ1 to at h the diallniiipnrlm 10. point III. When removing (

If the magnet 17 is not to be rotatable, but measured Fig. Ftd) of the magnet 17, the resistance increases

however, stood again up to point IV, since negative magnetic inductions from the resistor with characteristic curves according to FIG. 7b act as well as positive inductances. In Figure 7b, the point III is by chance on the axis B, ₁ - 0, since the outer induction B ₁₁ and the remanent induction _B1. 7a have been assumed to be the same. In FIG. 7c the relationships of 7b are temporally corresponding to FIG. 7 a.

Of course, the outer magnet can also be an electromagnet 20 according to FIG. 8. If, for example, a sinusoidal voltage u is applied to an electromagnet set up in the vicinity of the magnetic circuit according to the invention, then a sinusoidally changing external field β "results in the magnetic circuit at the location of the semiconductor body 13. If at the beginning of the period of the alternating field the field B ₀ and the remanence field β in the magnet 10 are directed in opposite directions, the result for the change in the remanent induction B at the location of the semiconductor body 13 is the rectangular curve B _{r shown} in FIG. 9a. The external induction B ₁₁ changes at the same time in accordance with the curve β "of FIG. 9a. In the semiconductor body 13, the inductions B _a and B _{r are} added in such a way that the resulting induction according to curve B ₁ results at the location of the semiconductor body 13. The change over time of a resistance with a characteristic according to FIG. 4, which is subjected to the induction β of FIG. 9a, is shown schematically in FIG. 9b. In Fig. 9b the induction changes which occur in the vicinity of the zero point of F i g. 9 a, are considered much less than the peaks of induction. This is because the resistance Rf for small inductions is roughly proportional to the square of the induction. If, contrary to the assumption of FIG. 8, the inductions B 1 and β 1 had been rectified in the magnet 10 at the beginning, the first resistance swing of FIG. 9 b would have failed. Otherwise there would be no change in FIG. 9 b.

Instead of the magnetic field-dependent ones mentioned so far as an example A Hall generator can also be provided as a semiconductor body 13 for resistors. In In this case, no separate curve needs to be drawn for the course of the Hall voltage, because the Hall voltage is proportional to the magnetic induction resulting in the semiconductor body. To get a qualitative picture of the state of the potash stress one only needs to look at the curves that determine the time dependent wedge of induction.

If you want to use a magnetic field-dependent resistor with a characteristic according to FIG. For example, if the change in induction take full advantage of the change in induction, in contrast to the case of FIG. 7b, it may be expedient to use a magnetic circuit which, in addition to the magnet 10, the so-called switching magnet, contains a magnet 40, the so-called biasing magnet. Such a magnetic circuit is shown schematically in FIG. In addition to the remanence induction β _r and the induction β "of the outer FeI-S of the premagnetization induction B _{v act} on the semiconductor body 13. When an outer magnet 17 approaches, the resulting magnetic induction B acting on the half-cilter 13 changes in the case of the polarities shown in FIG. 11, along the curve 41 of FIG. 12a. ίο The advantage of using the bias mapnet 40 is that the resulting induction B ₁ in the area of the semiconductor body 13 • no longer reverses its polarity. The entire change in induction can thus be used for the increase or decrease in resistance, as shown in FIG. 12b.

In the aforementioned type of application, it can be advantageous to ensure that the magnet 40 has as little influence as possible on the switching magnet 10. This can be achieved according to FIG. 11, for example, by making the magnetically conductive webs 43 and 44 between the semiconductor body 13 and the magnet 10 as narrow as possible, i.e. making the magnetic resistance of this pitch circle as large as possible with respect to the other pitch circle, so that the induction B _{v of} the magnet 40 essentially only goes through the branch with the semiconductor body 13 and the remanence induction β can practically not overturn.

On the other hand, I ⁷ S can also be beneficial to make the induction B _{v of} the bias magnet 40 in the area of the switching magnet 10 so strong that the magnet 40 always forces the direction of induction on the magnet 10 if there is no opposing external field. As the comparison of FIGS. 13a and 13b shows, an external magnetic field B ₁ , of _{sufficient strength and suitable direction, can tilt the remanent induction β r of} the switching magnet 10 (against the effect of the bias magnet 40) for the duration of its action. The corresponding induction ratios in the semiconductor body 13 are shown qualitatively in FIG. The induction ß resulting in the semiconductor body; is given there as a function of the time / during which an external magnetic field ß ". z. B. a moving magnet 17 (Fig. 13), has influence on d: n magnetic circuit. - At the beginning (area I) B _{1 0 is} very small (or almost zero), with (absolute) increasing external induction, B, - increases in the direction of - B _r . If B _{r is} exceeded, the switching magnet 10 reverses its induction by leaps and bounds. The induction B ₁ jumps from point II to point IN. At IU, B ₁ remains as long as the induction B _{11 is} large enough. If B _n drops again, the change is repeated in the opposite direction. If mat 55 uses a Hall voltage generator, in particular a Hall generator, as the semiconductor body, the curve in FIG. 14 simultaneously indicates qualitatively the time course of the Hall voltage

1 sheet of drawings

Claims (10)

an electromagnet is provided for the external magnetic field. Claims: U Use of the pulse generator according to one or more of the preceding claims 1. Contactless electrical pulse generator 5 sayings for modulating transistors or or switches with permanent magnets, thyristors and as relays, buttons or impulses Part of a closed magnetic circuit generator. forms whose magnetic return at least
a magnetic field sensitive semiconductor body contains, which also from an outside 10
acting changeable control magnetic field
is interspersed, characterized that a permanent magnet (10) with a small Koer- The invention relates .iuf a contactless citative field strength and large remanent inductor. electrical pulse generator or switch with a is provided and that the size and / or Rieh- 15 permanent magnets, which are part of a closed direction of the control field (S ") with the location or the magnetic circuit forms its magnetic The polarity of a control magnet (17 or 20) provides at least one magnetic field-sensitive is changeable, desstn magnetic axis contains parallel borrowed semiconductor body, which also of to the magnetic axis of the permanent magnet an externally acting, changeable (10) runs. au control magnetic field is penetrated. 2. Pulse generator according to claim 1, characterized from »IBM Techn. Disc. Bull. «Vol. 2, No. 3, characterized that in the magnetic circuit also October 1959, p. 50, is a storage system for elekein second magnet (40) is provided, the electronic computer systems with Ferrite Spe'chsrkerncn magnetically known with respect to the semiconductor body (13), in each of which the magnet is a ring parallel to the first magnet (10) is formed, the air gap of which has a magnetic field sensitive and opposite the first magnet (10) a borrowed semiconductor body, a so-called field plate contains high coercive force and small initial permeate. A larger number of such ring magnets evidences its mobility. a signaling electrical line is connected to each 3. Pulse generator naJi claim 2, characterized in that the current of the magnetic cores is characterized in that the magnetic circuit is designed in such a way that it tilts the magnetic starting position. One thing is that the tric signal of another line acting on the first magnet (10) sets the core component of the induction (B _v ) of the second magnet in its opposite magnetic end position - (40) small compared to the remanent induction (B ₁ . ) of the back. In this arrangement, the magnet forms the first magnet. entire magnetic circuit. The magnetic axis 4. Pulse generator according to claim 3, characterized in that 35 this magnet is curved. The core can be characterized by the fact that the induction (B _v ) , which acts on the semiconductor body only half by an electrical signal from a conductor (13), of the second is guided through the toroidal core, but magnets (40) are larger than or the same as that of not one outer magnetic control field first magnet (10) is to be set larger. 5. Pulse generator according to claim 2, characterized in 40 from British patent specification 1112 835 is characterized that the magnetic circuit, especially a contactless electrical switch with one which is known by dimensioning the Qutischnitte the permanent circuit, which is a magnetic field magnetically Conductive materials, designed to contain dependent resistance on the operation that the magnetic resistance in the part of the also acts a Steuermagnctfeld. Here is Magnetic circuit with the semiconductor body (13) and 45 a magnet with a large coercive field strength and smaller the second magnet (40) is small against the permeability used, deseii remanence by the magnetic reluctance in the part of the ivizgnet- external magnetic field is practically unchanged, circle to which the first magnet (10) belongs. The outer control field just adds to that 6. pulse generator according to claims 1 and 2, magnetic field of the permanent magnet. The magnet thereby characterized in that the first magnet 50 is field dependent resistance due to the permanent off oxidic ferrimagnetic material, magnetic field pre-magnetized or magnetically pre-magnetized Ferrite. tense. Such a bias field is 7. Pulse generator according to claims 2 turns to in the straight part of the characteristic of the mabis 5, characterized in that the second gnetfeld-dependent resistor to work. in the Magnet a ferromagnetic oxide or Al-Ni 55 range of low induction, the characteristic is known-Co material is. borrowed curved. The size and steepness of the with 8. Pulse generator according to claims 1 the known switch achievable signals and da- and 2, characterized in that the half with the switching speed depend in the wesentleiterkörper a Hall voltage generator or a borrowed from the externally acting control magnetic field dependent Resistance, e.g. a field- 60 magnetic field. Steep signals can be achieved with the beplatte or a resistor with a magnetic known device so only by a corresponding one Barrier, is. rapid change dier.es control magnetic field achieved 9. Pulse generator according to claims 1 are. and 2, characterized in that for the production of British patent specification 965 804 is also the external magnetic field a movable 65 a pulse generator with a Hall generator as a half Permanent magnet is provided. conductor body known, which is in an open magnetic 10. Pulse generator according to claims 1 table bias circuit with a permanent and 2, characterized in that to generate magnets with high remanence between two