DE1614481A1 - Semiconductor component - Google Patents

Semiconductor component

Info

Publication number
DE1614481A1
DE1614481A1 DE19671614481 DE1614481A DE1614481A1 DE 1614481 A1 DE1614481 A1 DE 1614481A1 DE 19671614481 DE19671614481 DE 19671614481 DE 1614481 A DE1614481 A DE 1614481A DE 1614481 A1 DE1614481 A1 DE 1614481A1
Authority
DE
Germany
Prior art keywords
housing part
semiconductor
semiconductor component
housing
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19671614481
Other languages
German (de)
Inventor
Willi Mosch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of DE1614481A1 publication Critical patent/DE1614481A1/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

Halbleiterbauelement Die Erfindung bezieht sich auf ein Halbleiterbauelement, bestehend aus einem als Kühlkörper dienendeng.metallischen Gehäuseteil, an dem mindestens ein Halbleiterkörper mit mindestens einem pn-Übergang angelötet isty und aus einer weiteren, mit diesem Gehäuseteil verbundenen Umhüllung, die zusammen mit dem Gehäuseteil ein den Halbleiterkörper vollständig umschließendes Gehäuse bildet, durch das ein Anschlußleiter isoliert nach außen geführt ist.Semiconductor component The invention relates to a semiconductor component, consisting of a metallic housing part serving as a heat sink, on which at least a semiconductor body with at least one pn junction is soldered on and made of one further casing connected to this housing part, which together with the housing part forms a housing which completely encloses the semiconductor body, through which a Connection conductor is insulated to the outside.

Bei bekannten Halbleiterbauelementen dieser Art besteht der metallische Gehäuseteil aus kfer, da dies das einzige, unter wirtschaftlichen Gesichtspunkten in Betracht kommende Metall .ist, das ohne besondere Maßnahme lötfähig und gut wärmeleit-e-nd und Strom leitend ist. Das im übrigen auch.für Kühlkörper verwendetete und Wärme gut leitende Aluminium kommt für diesen Zweck nicht in Betracht, da es nicht ohne weiteres lötbar ist. Die Halbleiterbauelemente wurden daher mit besonderen Gehäusen versehen und in Kühlkörper aus Aluminium eingeschraubt oder eingepreßt. Feruer hat man Aluminiumkühlkörper auch im Zusammenhang mit Druckkontakten verwendet.In known semiconductor components of this type, there is the metallic Housing part made of beetle, as this is the only one under economic Considerable metal .is that can be soldered without special measures and has good thermal conductivity and electricity. Incidentally, this also applies to heat sinks Used and heat-conductive aluminum is not suitable for this purpose, because it is not easily solderable. The semiconductor components were therefore using special housings and screwed into aluminum heat sinks or pressed in. In addition, aluminum heat sinks are also used in connection with pressure contacts used.

Die Erfindung hat eine Verbilligung von Halbleiterbauelementen der eingaAge genannten Gattung durch Einsparung des verhältnismäßig teueren Kupfern zum Zfel. Die Erfindung ist da.durch gekennzeichnet, daß das Gehäuseaus Aluminium oder einer Wärme und Strom gut leitenden Aluminiumlegierung besteht, und daß das Gehäuseteileuf mindestens der dem Halbleiterkörper zugewandten und mit ihm zu verbindenden Oberfläche mit einem gut lötfähigen Material, wie Kupfer oder Silber überzogen, vorzugsweise plattiert ist. Ausgangsmaterial bei der Fertigung der Gehäuseteile sind wenigstens einseitig,plattierte Bleche, aus denen die Gehäuaeteile ausgestanzt-werden, Die Form dieser Gehäuseteile kann dabei sehr unterschiedlich und inabesonders durch konstruktive Be-.dingungen bestimmt sein, die nicht durch *das Halbleiterbauelement selbst gestellt werden. Die aungestanzten Teile können no beispielsweise auch als Chassis für andere Bauelemente und/oder mehrere-Halbleiterbauelemente dienen. Insbesondere können die einzelnen ausgestanten Teile untereinander identisch so ausgeführt sein, daß sie sich zu einer größeren Baueinheit z.B, zu einer Gleichrichterbrücke oder Mittelpunktschaltung bausatzartig zusammenfügen lassen. Dabei können die einzelnen Teile die Form von Ringsektoren habeng-deren Außenradius beispielsweise dem Radius einerelektcLochen klaächine angepaßt ist. Man kann dann ohne Schwierigkeiten und großen Aufwand eine Gleichrichterbrücke an dem lagerschild einer Wechselstrommaschine befestigen. Der Halbleiterkörper, vorzugsweise aus monokristallinem Silizium mit mindestens einem diffundierten oder legierten pn-Übergang, bildet mit zwei durch Übtung oder Legierung befestigten Elektrodenkörpern ein vorzugsweise vorgefertigtes und vorgeprüftes Halbleiterelement. Der Halbleiterkörper ist dabei gegen die Atmosphäre durch eine Lack- und/oder Hazachicht geschützt. Zwischen den Elektrodenkörpern können dabei auch mehrere Halbleiterkörper nebeneinander liegen. Die einzelnen, so vorgefertigten Halbleiterelemente können entweder auf die vollständig ebene oder in besonderer Weise vorgeprägte, plattierte Seite des ausgestanzten Gehäuseteiles aufgelötet,werden. Besonders geeignet hierfür ist ein Tauchlötvorgangg bei dem zugleich ein Anschiußleiter auf der anderen Seite den Halbleiterelementes befestigt werden kann. .L,as Halbleiterelement kann mit einem Isolieratoff umpreßt oder umgegossen seing was einen zusätzlichen mechanischen Schutz und auße-Tdem noch eine weitere Stabilisierung der elektrischen Eigenschaften bringt, Als Isolierstoff kommen dabei Thermoplaste oder Duroplaste in Frage. Die letzteren sind vor allem fUr das Umprüssen geeignet. Zweckmäßig wird man einen Härter und gegebenen' falls noch einen.Weichmacher zugeben. Ein weiterer Zusatz an Siliconharz macht derartige Massen praktisch wasserundurchlässig. fi iju; Verbesserung der mechanischen Verbindung zwischen Verguß- oder l'reßmanee und dem Gehäuseteil empfiehlt es aich, dem letzteren eine solche Form züi gebenp daß eine formschlüssige Verbindung zwiechen der Preß- oder Vergußmasse und dem Gehäuseteil oder/und mit dem StanzTorgang, im wesentlichen IJ-förmi.ge Ausnehnungen einx# zuprügen, In dieae könmen dann die lialbleiterelemente eingelötet wcrden. Der verbleibende Raum, der unter Umständen noch Betielia2tungselemente aufnehmen kann, wirddann mit Verguß- oder lreßmasse gefüllt. oder Kupfer und sind-mit einem Lot, z.B. Blei überzogen.Die freiliegenden Oberflächen des Halbleiterkörpers 1 sind durch Lack 3 z.B. Alizarinfack, gegen die Atmosphäre geschützt. Derartige Halbleiter elemente lassen sich billig in großen Stückzahlen fertigen und prüfen. Es werden daher nur einwandfreie Halbleiterelemente weiterverarbeitet. Der als Kühlkörper wirkende Gehäuseteil ist insgesamt mit 4 bezeichnet. Er besteht zum größten Teil-aus Aluminium 41 und weist eine schmale Oberflächenzone 42 aus Kupfer auf. Die Oberfläche ist so geprägt, daß ein Vorsprung 43 entsteht, dessen Fläche kleiner als die des Elektrodenkörper 22 ist. Dadurch ergibt sich eine gute, formschlüssige Verbindung zwischender Preßmasse 6, dem Halbleiterelement und dem Gehäusetei14. leiter 5 in einem Tauchlötvorgang mit dem Gehäuseteil 4 verbunden. Zum EinsetZen deB gesamten Halbleiterbauelementes in einen weiteren Konstruktionsteil is,t der Gehäuseteil 4 z.B. mit einer mit 44 bezeichneten Rändelung.versehen.The invention makes semiconductor components of the type mentioned at the beginning cheaper by saving the relatively expensive copper for the cell. The invention is characterized in that the housing is made of aluminum or an aluminum alloy that conducts heat and electricity well, and that the housing part is preferably coated with a readily solderable material such as copper or silver on at least the surface facing the semiconductor body and to be connected to it is plated. The starting material for the manufacture of the housing parts is at least one-sided, clad sheets from which the housing parts are punched.The shape of these housing parts can be very different and in particular determined by structural conditions that are not imposed by the semiconductor component itself. The unstamped parts can also be used, for example, as a chassis for other components and / or a plurality of semiconductor components. In particular, the individual cut-out parts can be designed to be identical to one another so that they can be assembled as a kit to form a larger structural unit, for example, to form a rectifier bridge or midpoint circuit. The individual parts can have the shape of ring sectors - the outer radius of which is, for example, adapted to the radius of an electric hole. You can then attach a rectifier bridge to the end shield of an AC machine without difficulty and great effort. The semiconductor body, preferably made of monocrystalline silicon with at least one diffused or alloyed pn junction, forms a preferably prefabricated and pre-tested semiconductor element with two electrode bodies fastened by practice or alloy. The semiconductor body is protected from the atmosphere by a lacquer and / or Hazach layer. A plurality of semiconductor bodies can also lie next to one another between the electrode bodies. The individual semiconductor elements prefabricated in this way can either be soldered onto the completely flat or specially pre-stamped, plated side of the punched-out housing part. A dip soldering process is particularly suitable for this, in which at the same time a connection conductor can be attached to the other side of the semiconductor element. .L, the semiconductor element can be pressed around or cast around with an insulating material, which brings additional mechanical protection and also further stabilization of the electrical properties. Thermoplastics or thermosets are suitable as insulating materials. The latter are particularly suitable for overmolding. It is advisable to add a hardener and, if necessary, a plasticizer. A further addition of silicone resin makes such compounds practically impermeable to water. fi iju; To improve the mechanical connection between the potting or potting compound and the housing part, it is also advisable to give the latter such a shape that a positive connection between the molding compound or potting compound and the housing part and / or With the punching gate, essentially punch in IJ-shaped recesses, into which the conductor elements can then be soldered. The remaining space, which may still be able to accommodate beta-wire elements, is then filled with potting compound or potting compound. or copper and are coated with a solder, for example lead. The exposed surfaces of the semiconductor body 1 are protected from the atmosphere by varnish 3, for example alizarin paint. Such semiconductor elements can be manufactured and tested cheaply in large numbers. Therefore only perfect semiconductor elements are processed. The housing part acting as a heat sink is denoted by 4 as a whole. It consists for the most part of aluminum 41 and has a narrow surface zone 42 made of copper. The surface is embossed in such a way that a projection 43 is produced, the area of which is smaller than that of the electrode body 22. This results in a good, form-fitting connection between the molding compound 6, the semiconductor element and the housing part 14. Head 5 connected to the housing part 4 in a dip soldering process. In order to insert the entire semiconductor component into a further structural part, the housing part 4 is provided, for example, with a knurling denoted by 44.

Claims (1)

Pa teil banapx,ilo he 1.) Halbleiterbauelement, bestehend aus einem als Kühll:örper dienenden, metallischen Gehäuseteil, an dem ain -Ij Halbleiterkörper mit-mindestens einen pn Übergang -ingelötet -ist, und aus einer weiteren, mit diesem Gehäuaeteil verbundenen Umhüllung, die zusammen mit dem Gehäuseteil ein den Halbleiterkörper vollständig umschließendes Gehäuje bildet, durch das ein Anschlußleiter isoliert nach außen geführt -iatg dadurch gekennzeichnet, daß das Gehäuseteil (4) alls Aluminium (4-1) oder einer Wärme und Strom gut leitenden #.luminiunilegierullci,.> besteht, und daß das Gehäuseteil auf mindesten3 dar dem Halbleiterkörper zugewandten und mit ihm zu verbiniltenden Oberfläche mit einem gut lötfähigen Material (42), wie Kupfer oder Silber überzoEen ist. 2.) Halbleiterbauelement nach Anspruch 1, dadurch gekennzeichnet, daß der Gehäuseteil mit dem gut lötfäliigoii Matterial plattiert ist.Pa part banapx, ilo he 1.) Semiconductor component, consisting of a metallic housing part serving as a cooling body, on which ain -Ij semiconductor body is soldered with at least one pn junction, and a further casing connected to this housing part which, together with the housing part, forms a housing that completely encloses the semiconductor body, through which a connecting conductor is insulated to the outside -iatg characterized in that the housing part (4) is made of aluminum (4-1) or a # .luminiunlegierullci ,.>, and that the housing part is coated on at least 3 of the surface facing the semiconductor body and to be connected to it with a readily solderable material (42), such as copper or silver. 2.) Semiconductor component according to claim 1, characterized in that the housing part is plated with the good Lötfäliigoii Matterial.
DE19671614481 1967-04-03 1967-04-03 Semiconductor component Pending DE1614481A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0109159 1967-04-03

Publications (1)

Publication Number Publication Date
DE1614481A1 true DE1614481A1 (en) 1970-07-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912189A1 (en) * 1978-03-30 1979-10-04 Sev Marchal SEMICONDUCTOR POWER DIODE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912189A1 (en) * 1978-03-30 1979-10-04 Sev Marchal SEMICONDUCTOR POWER DIODE

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