DE1564729A1 - Mechanical and optical coupling of semiconductor components - Google Patents
Mechanical and optical coupling of semiconductor componentsInfo
- Publication number
- DE1564729A1 DE1564729A1 DE19661564729 DE1564729A DE1564729A1 DE 1564729 A1 DE1564729 A1 DE 1564729A1 DE 19661564729 DE19661564729 DE 19661564729 DE 1564729 A DE1564729 A DE 1564729A DE 1564729 A1 DE1564729 A1 DE 1564729A1
- Authority
- DE
- Germany
- Prior art keywords
- mechanical
- optical coupling
- photodiode
- melting
- semiconductor components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 230000008878 coupling Effects 0.000 title claims description 7
- 238000010168 coupling process Methods 0.000 title claims description 7
- 238000005859 coupling reaction Methods 0.000 title claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000007792 addition Methods 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- -1 arsenic selenide Chemical class 0.000 claims description 3
- CUGMJFZCCDSABL-UHFFFAOYSA-N arsenic(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[As+3].[As+3] CUGMJFZCCDSABL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000000344 soap Substances 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
Description
-2.JUU1969-2.JUU1969
SIEMENS AKTIENGESELLSOHAi1T München 2,SIEMENS AKTIENGESELLSOHAi 1 T Munich 2,
Berlin und München Witteisbacherplatz 2Berlin and Munich Witteisbacherplatz 2
P 15 64 729.7 ?A 66/3041P 15 64 729.7? A 66/3041
Mechanische und optische Verdopplung von Halbleiterbauelementen Zusatz zum Patent (OS 1 564 598) Mechanical and optical duplication of semiconductor components Addition to patent (OS 1 564 598)
Die Erfindung "betrifft eine weitere Ausgestaltung der in der Hauptamneldung OS 1 564 598 bereits beschriebenen optoelektronischen Halbleiteranordnung und bezieht sich auf die mechanische und optische Verkopplung bei gleichzeitig hoher Spannungsfestigkeit zwischen Lichtleiter und den beiden Halbleiterbauelementen. The invention "relates to a further embodiment of the Main notification OS 1 564 598 already described optoelectronic Semiconductor arrangement and refers to the mechanical and optical coupling with simultaneously high dielectric strength between the light guide and the two semiconductor components.
In der Hauptanmeldung wurde gefordert, daß die Halbleiterbauelemente, nämlich die Lumineszenzdiode als Sender B und die Photodiode als Empfänger A, mechanisch und optisch mit einem Lichtleiter, der im wesentlichen aus hochschmelzendem und zur Erhöhung der optischen Brechzahl mit Zusätzen von Arsensulfid As.S. oder Arsenselenid AspSe, versehenem Glas besteht, verbunden sein soll. Zur Verbesserung der Haftung zwischen Lichtleiter und Photodiode war deshalb eine dünne Metallschicht vorgesehen, so daß Lichtleiter und Photodiode zusammengeschmolzen werden konnten. Bei Zusatz von etwa 65 Gew# Jod zu dem AsgSe«- Glaslichtleiter erwies sich die Haftung als noch fester und die mechanische Verkopplung zeigte obendrein noch fast plastisches Verhalten, wie es für einen Betrieb bei wechselnden Temperaturen, insbesondere zwischen -40 und +125 0C erforderlich ist.In the main application it was required that the semiconductor components, namely the luminescent diode as transmitter B and the photodiode as receiver A, mechanically and optically with a light guide, which essentially consists of high-melting point and to increase the optical refractive index with additions of arsenic sulfide As.S. or arsenic selenide AspSe, provided glass, is to be connected. To improve the adhesion between the light guide and the photodiode, a thin metal layer was therefore provided so that the light guide and the photodiode could be melted together. On addition of about 65 wt # iodine to the AsgSe "- glass optical fiber, the adhesion was found to be more tightly and the mechanical coupling showed on top of that almost plastic behavior, as for operation at varying temperatures, in particular between -40 and +125 0 C is required.
Auf die Art und Weise der mechanischen Verkopplung zwischen Lichtleiter und Lumineszenzdiode wurde in der Hauptanmeldung nicht näher eingegangen. Dooh auch dort wird gute optische und gleichzeitig stabile meohanisohe Verkopplung gefordert.The main application not detailed. Dooh there too will be good visual and at the same time stable mechanical coupling is required.
809887/0813809887/0813
15847291584729
Sie vorliegende Erfindung - als Zusatz zur Hauptanaeldung zeigt, daß sich zwischen dem hochschmelzenden Lichtleiter L aus hochbrechendem Glas und den beiden Halbleiterbauelementen, insbesondere GaAs-Lumineezenzdiode und Si-Photodiode, eine mechanische Verdopplung herstellen läflt, indem ein Kitt aas einer niedrigschmelzenden Glasschicht oder aus einem organischen Kleber mit einer Dicke ron der Größenordnung der Wellenlänge λ des benutzten Lichts - im Falle einer GaAs-Lumineszenzdiode also ca. 0,5 bis 1/um - verwendet wird· Ohne wesentlichen Nachteil bezüglich der Absorptionsverluste und der Spannungsfestigkeit können bei diesen Kittschichten ein Ab-Sorptionskoeffizient bis zuo(<=5.1O^ cm und eine elektrische Leitfähigkeit von weniger als 10 pro -Π- cm innerhalb des genannten Temperaturbereichs zugelassen werden, Zur Verbesserung der Haftung auf den Halbleiteroberflächen kann der Kitt noch durch eine aufgedampfte Metallschicht ergänzt werden.You present invention - as an addition to the main application shows that between the high-melting light guide L made of high-index glass and the two semiconductor components, in particular GaAs luminescent diode and Si photodiode, one Mechanical duplication can be achieved by using a putty a low-melting glass layer or an organic one Glue with a thickness of the order of the wavelength λ of the light used - in the case of a GaAs light emitting diode that is approx. 0.5 to 1 / µm - is used · Without significant Disadvantages with regard to absorption losses and dielectric strength can be an absorption coefficient in these cement layers up to (<= 5.1O ^ cm and an electric Conductivity less than 10 per -Π- cm within said Temperature range, the putty can still be used to improve the adhesion to the semiconductor surfaces can be supplemented by a vapor-deposited metal layer.
Dieses Verfahren zur mechanischen und optischen Verkopplung eines hochschmelzenden, hochisolierenden Lichtleiters L, s. B. aus Arsenselenid AsgSe« oder Arsensulfid As^S, (vgl, Hauptanmeldung OS 1 564 598) oder aus semiisolierendem Galliumarsenid GaAs (vgl. unsere Anmeldung OS 1 514 613) f mit der Lumineszenzdiode B, z. B. aus GaAs, bzw. mit der Photodiode A, z. B. aus Si, durch Verwendung dünner, niedrigschmelzender Kittschichten K- und K2 ist technologisch vorteilhafter als die in der Hauptanmeldung vorgeschlagenen Methoden. In der Figur ist eine erfindungsgemäße Anordnung schematisch dargestellt; die Bezeichnungen gehen aus dem vorangehenden Text hervor.This method for the mechanical and optical coupling of a high-melting, highly insulating light guide L, see, for example, made from arsenic selenide AsgSe «or arsenic sulfide As ^ S, (cf. main application OS 1 564 598) or from semi-insulating gallium arsenide GaAs (cf. our application OS 1 514 613) f with the light emitting diode B, e.g. B. from GaAs, or with the photodiode A, z. B. made of Si, by using thin, low-melting cement layers K and K 2 is technologically more advantageous than the methods proposed in the main application. In the figure, an arrangement according to the invention is shown schematically; the designations can be found in the preceding text.
1 Figur1 figure
2 Patentansprüche2 claims
909887/0813909887/0813
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0106285 | 1966-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1564729A1 true DE1564729A1 (en) | 1970-02-12 |
Family
ID=7527292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564729 Pending DE1564729A1 (en) | 1966-09-30 | 1966-09-30 | Mechanical and optical coupling of semiconductor components |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT274072B (en) |
| CH (1) | CH465728A (en) |
| DE (1) | DE1564729A1 (en) |
| FR (1) | FR1554698A (en) |
| GB (1) | GB1142110A (en) |
| NL (1) | NL6707360A (en) |
| SE (1) | SE335187B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3713067A1 (en) * | 1986-09-30 | 1988-03-31 | Siemens Ag | OPTOELECTRONIC COUPLING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
-
1966
- 1966-09-30 DE DE19661564729 patent/DE1564729A1/en active Pending
-
1967
- 1967-05-26 NL NL6707360A patent/NL6707360A/xx unknown
- 1967-06-13 SE SE829667A patent/SE335187B/xx unknown
- 1967-09-27 FR FR1554698D patent/FR1554698A/fr not_active Expired
- 1967-09-28 CH CH1358067A patent/CH465728A/en unknown
- 1967-09-28 AT AT882667A patent/AT274072B/en active
- 1967-09-29 GB GB4434567A patent/GB1142110A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3713067A1 (en) * | 1986-09-30 | 1988-03-31 | Siemens Ag | OPTOELECTRONIC COUPLING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6707360A (en) | 1968-04-01 |
| FR1554698A (en) | 1969-01-24 |
| GB1142110A (en) | 1969-02-05 |
| AT274072B (en) | 1969-09-10 |
| SE335187B (en) | 1971-05-17 |
| CH465728A (en) | 1968-11-30 |
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