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Robotron VEB
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Robotron VEB
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Application filed by Robotron VEBfiledCriticalRobotron VEB
Publication of DE1524887A1publicationCriticalpatent/DE1524887A1/en
G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Claims (1)
Patentanspruch Verfahren zum Einschreiben von Informationen mit koinzidenten
orthogonalen Magnetfeldern in magnetischen Dünnschichtspeicher mit zerstörungsfreiem
Auslesen nach dem Prinzip der Wirbelstromverzögerung, dadurch gekennzeichnet, daß
der Einschreibevorgang in bekannter Weise mit einem Schaltfeldimpuls (H8) in Richtung
der harten Achse der Schicht in Koinzidenz mit einem in Richtung der leichten Achse
wirkenden magnetischen Steuerfeld (Hd) durchgeführt wird, wobei der Schaltfeldimpuls
von kurzer Dauer, das heißt von der Größenordnung der abklingenden Zeitkonstante
der Wirbelstromfeldstärke (I-W), ist und das magnetische Steuerfeld (Hd) die ungefähre
Größe der an der Rückflanke des Schaltfeldimpulses (Hs) über der schaltenden Schicht
liegenden Komponente der Wirbelstromfeldstärke (Hw) in Richtung der leichten Achse
besitzt, oder daß der Einschreibevorgang in ebensolcher Weise eingeleitet und durch
einen weiteren oder mehrere weitere kurze Schaltfeldimpulse (Hs) mit hinreichendem
zeitlichen Abstand bei An- oder Abwesenheit des magnetischen Steuerfeldes (H(i)
vollendet wird und daß die zum Einschreiben benutzten Schaltfeldimpulse (H8) nach
Dauer und Amplitude gleichartig den für das Auslesen benutzten Schaltfeldimpulsen
(H.) sind.
A method for writing information with coincident orthogonal magnetic fields in magnetic thin-film memory with non-destructive reading according to the principle of eddy current delay, characterized in that the writing process in a known manner with a switching field pulse (H8) in the direction of the hard axis of the layer in coincidence with one in the direction The magnetic control field (Hd) acting on the easy axis is carried out, the switching field pulse being of short duration, i.e. of the order of magnitude of the decaying time constant of the eddy current field strength (IW), and the magnetic control field (Hd) being the approximate size of the on the trailing edge of the switching field pulse (Hs) above the switching layer component of the eddy current field strength (Hw) in the direction of the easy axis, or that the writing process is initiated in the same way and by one or more further short switching field pulses (Hs) with sufficient time interval in the presence or absence of the magnetic control field (H (i) is completed and that the switching field pulses (H8) used for writing are similar in duration and amplitude to the switching field pulses (H.) used for reading.
DE196715248871967-12-091967-12-09
Method of writing information in thin-film magnetic memories
PendingDE1524887A1
(en)
Arrangement for triggering a bistable circuit with the aid of trigger signals whose duration is shorter than that of the trigger signals normally required
Magnetic device with a body made of magnetizable material which has an at least approximately rectangular hysteresis characteristic, and method for operating such a device