DE1523384C - Stabilized temperature control circuit - Google Patents
Stabilized temperature control circuitInfo
- Publication number
- DE1523384C DE1523384C DE19651523384 DE1523384A DE1523384C DE 1523384 C DE1523384 C DE 1523384C DE 19651523384 DE19651523384 DE 19651523384 DE 1523384 A DE1523384 A DE 1523384A DE 1523384 C DE1523384 C DE 1523384C
- Authority
- DE
- Germany
- Prior art keywords
- control
- bridge
- temperature
- amplifier
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000001419 dependent Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 230000002349 favourable Effects 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 230000000875 corresponding Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000001105 regulatory Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 238000005728 strengthening Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 230000001264 neutralization Effects 0.000 description 1
- 230000003334 potential Effects 0.000 description 1
Description
Verstärkers, an sich bekannt, wie dies z. B. aus den nachfolgenden Literaturstellen, »Siemens Zeitschrift«, Mai 1964, Heft 5, Seiten 369 bis 375, bezüglich der Kaltleiter oder der Zeitschrift für Instrumentenkunde, 1963, Heft 5, S. 123, für Zenerdioden oder der TF-Sammlung, Beilage für Funktechnik, 1958, Nr. 22, für die Gleichstromgegenkopplung, zu entnehmen ist. Aus keiner der Literaturstellen ist jedoch die der Erfindung zugrundeliegende Anordnung zu entnehmen, durch die insgesamt eine Thermostatregelschaltung erhalten wird, bei welcher die Auswirkung der Stromverstärkungsstreuung der Transistoren beliebig herabgesetzt werden kann. Es ist möglich, die Verstärkung hinreichend konstant zu halten, so daß die Exemplarstreuungen der Regelverstärkung den Regelfehler nur noch unwesentlich beeinflussen können. Auch kleine Terhperaturänderungen lassen sich mit dieser Schaltungsanordnung sicher ausregeln. Sehr vorteilhaft wirkt sich hierbei weiterhin die Verwendung eines keramischen Kaltleiters als temperaturabhängiger Widerstand aus, da dieser hinsichtlich seines Temperaturbeiwertes besonders günstig ist. Amplifier, known per se, as z. B. from the following references, "Siemens Zeitschrift", May 1964, issue 5, pages 369 to 375, regarding the PTC thermistor or the journal for instrument technology, 1963, issue 5, p. 123, for Zener diodes or the TF collection, supplement for radio technology, 1958, No. 22, for the DC negative feedback, can be found. From none of the references however, the arrangement on which the invention is based can be seen through which a total of one Thermostat control circuit is obtained in which the effect of the current gain dispersion of the Transistors can be reduced arbitrarily. It is possible to keep the gain sufficiently constant hold, so that the sample variance of the control gain only insignificant the control error can influence. Even small temperature changes can be made with this circuit arrangement regulate safely. The use of a ceramic also has a very advantageous effect here PTC thermistor as a temperature-dependent resistor, as this is particularly favorable in terms of its temperature coefficient.
An Hand des Ausführungsbeispiels nach der Figur wird die Erfindung näher erläutert.The invention is explained in more detail using the exemplary embodiment according to the FIGURE.
An den beiden Klemmen einer Gleichspannungsquelle liegt in Serie mit einem Widerstand R6 eine Temperaturfühler R7, der als keramischer Kaltleiter Brückenschaltung, deren Zweige einerseits von dem ausgebildet ist, und dem ohmschen Widerstand R& und andererseits den beiden Zenerdioden D1 und D2 gebildet werden. Im Nullzweig der Brücke liegt die Basis-Emitter-Strecke des Transistors T3, wobei der Emitter an den Verbindungspunkt zwischen den beiden Zenerdioden und die Basis an den Verbindungspunkt zwischen Widerstand R8 und Temperaturfühler R1 geführt ist. Der Kollektor des Transistors T3 ist über den Widerstand R5 an die Basis des Transistors T2 geführt, dessen Emitter mit der Basis vom Transistor T1 verbunden ist. In der Emitter-Basis-Streckc der Transistoren T1 und T2 liegen die ohmschen Widerstände R1 bzw. /?., und im Kollektorkreis die am positiven Pol der Spannungsquelle liegenden Widerstände R2 bzw. /?4. Der Widerstand R2 dient dabei gleichzeitig als Heizwiderstand für den Thermostaten. Die Serienschaltung von Emitter-Kollektor-Strecke des Transistors T1 und Widerstand R2 liegt parallel zur Spannungsquelle. In die Schaltung sindAt the two terminals of a DC voltage source, in series with a resistor R 6, there is a temperature sensor R 7 , which is formed as a ceramic PTC resistor bridge circuit, the branches of which are formed on the one hand by the, and the ohmic resistor R & and on the other hand the two Zener diodes D 1 and D 2 will. The base-emitter path of the transistor T 3 is located in the neutral branch of the bridge, the emitter being led to the connection point between the two Zener diodes and the base to the connection point between resistor R 8 and temperature sensor R 1 . The collector of the transistor T 3 is led through the resistor R 5 to the base of the transistor T 2 , the emitter of which is connected to the base of the transistor T 1 . In the emitter-base-Streckc of the transistors T 1 and T 2 are the resistances R 1 and /?., And in the collector circuit resistances R lying on the positive pole of the voltage source 2 and /? 4th The resistor R 2 also serves as a heating resistor for the thermostat. The series connection of the emitter-collector path of the transistor T 1 and resistor R 2 is parallel to the voltage source. Are in the circuit
ίο außerdem zwei Gegenkopplungswiderstände eingefügt. Der eine ist in Serie geschaltet zu der Zenerdiode D2, welche am positiven Pol der Spannungsquelle liegt, und der andere liegt parallel zu der Serienschaltung des mit seiner Emitter-Basis-Strecke im Nullzweig der Brücke liegenden Transistors ΤΛ und den kollektorseitig angeschlossenen Transistoren T1 und T2. Letzterer Widerstand ist an die Verbindungspunkte zwischen Zenerdiode D2 und Gegenkopplungswiderstand/?12 einerseits und Kollek-ίο also inserted two negative feedback resistors. One is connected in series with the Zener diode D 2 , which is connected to the positive pole of the voltage source, and the other is connected in parallel with the series connection of the transistor Τ Λ with its emitter-base path in the zero branch of the bridge and the transistors T connected on the collector side 1 and T 2 . The latter resistance is at the connection points between Zener diode D 2 and negative feedback resistor /? 12 on the one hand and collective
ao tor von Transistor T1 und Widerstand R2 andererseits geführt. Der Verstärkungsverlust, welcher durch die Gegenkopplung (R11 und R12) bewirkt wird, wird durch den zusätzlichen Transistor T4 gedeckt, welcher zwischen dem Widerstand R5 und demao gate of transistor T 1 and resistor R 2 on the other hand. The gain loss, which is caused by the negative feedback (R 11 and R 12 ) is covered by the additional transistor T 4 , which is between the resistor R 5 and the
Transistor T2 angeordnet ist, und zwar liegt die Basis am Widerstand R5 und der Emitter an derTransistor T 2 is arranged, namely the base is on the resistor R 5 and the emitter on the
is des Transistors T9. In'· seiner Emitter-Basis: Strecke ist der Widerstand R9 und kollektorseitig'iier" Widerstand R10 angeordnet. Bei Temperatyrähderun-is of the transistor T 9 . The resistor R 9 is arranged in its emitter base : path and the resistor R 10 on the collector side.
gen ändert sich entsprechend der Kennlinie des temperaturabhängigen Widerstandes der Brückenstrom, und damit nehmen die Potentiale von Emitter und Basis des Transistors T3, die bei abgeglichener Brücke auf gleicher Höhe liegn, verschiedene Werte an; der Transistor T3 öffnet. Der nun im Brückenzweig fließende Strom wird in den weiteren Transistoren verstärkt, so daß im Heizwiderstand R0 ein entsprechend höherer Strom zum Fließen kommt. Über die Widerstände R11 und Rv, erfolgt die Gegenkopplung. gen changes according to the characteristic curve of the temperature-dependent resistance, the bridge current, and thus the potentials of the emitter and base of the transistor T 3 , which are at the same level when the bridge is balanced, take on different values; the transistor T 3 opens. The current flowing in the bridge branch is amplified in the other transistors, so that a correspondingly higher current flows in the heating resistor R 0. The negative feedback takes place via the resistors R 11 and R v.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
Claims (1)
Darüber hinaus können Exemplarstreuungen aus- Aufgabe der Erfindung ist es, eine Regelschaltung zuwechselnder Transistoren nicht aufgefangen wer- für Thermostaten zu schaffen, mit welcher auch den, was einen erheblichen Nachteil insbesondere kleine Temperaturänderungen sicher ausgeregelt bezüglich des Einflusses der Exemplarstreuungen auf 55 werden können.The invention relates to a stabilized T & m- A main problem with all control circuits-for temperature control circuit with a thermostat to be continuously controlled with direct voltage consists in any case, fed Wheatstone bridge, in one of which there is a PTC bridge because of the specimen joy. and an NTC resistor due to fluctuating current amplification of the Tranais temperature sensors for the internal and external 30 sistors of the circuit as well as when exchanging temperature of a thermostat and transistors within a circuit differences in their measurement diagonals result in the input of a control error and a tendency to oscillate , coupled DC amplifier, whose load both are extremely uncomfortable for the control resistance is a heating coil of the thermostat. and undesirable phenomena affecting the control-Such control circuits are known. 35 Influence the process unfavorably. Since increasing Ver-So is, for example, in the German industry Strengthening of the control amplifier the tendency to oscillate in utility model document 1 884 498, in particular FIG. 3, enlarged, should, if possible, to avoid a stabilized control circuit arrangement for control oscillations, the control thermostat should be designed with a Wheatstone bridge amplifier so that it was written at the highest possible level. The bridge contains two temperature-dependent resistors, which act as thermal sensors inside. When using transistor specimens inside the thermostat and with a small current gain, the input of a direct current error then rises in the rule of their measuring diagonal. In addition to a dependency of the vibration amplifier lies. On the other diagonal there is also a supply voltage supplied by the control amplifier, and the heating 45 such from the temperature sensor, namely increases with the winding of the thermostat is arranged in the output circuit of its steepness and the size of the thermal time amplifier. constant the tendency to control oscillations. However, this circuit arrangement has the following disadvantages, which also involve the above, that the supply voltage at the bridge is more or less unstabilized, so that supply voltage 5 ° stick, but it is not possible, in particular fluctuations in the Bridge adjustment received. to regulate small temperature changes safely.
In addition, it is the object of the invention to create a control circuit of alternating transistors for thermostats, with which the, which is a significant disadvantage in particular small temperature changes, can be safely regulated with regard to the influence of the sample variance on 55.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0099820 | 1965-09-30 | ||
DES0099820 | 1965-09-30 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE1523384A1 DE1523384A1 (en) | 1970-04-09 |
DE1523384B2 DE1523384B2 (en) | 1972-11-16 |
DE1523384C true DE1523384C (en) | 1973-06-14 |
Family
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