DE1488834A1 - State-dependent tax system - Google Patents

Description

@ ustsndsabhl @ es @ taru @ rreysten The liaupteutgube der Ertindund consists in the Soxwttmag one autorstieohea Utewru » g an electrical Belaetugse zrOm- circle with an electrical consumer to which an im substantial account t ante spanwma of the one essentially konatsatea dpmnnunf »lle about eia. nustandaebbbhä n & NM Btrom .. ®te »srorriohtung rot read« Aggragatsuotand is applied, which held in series with dat elektriabea iaststros @ creis is, no you the electrical load wgenblioklioh with äer & le wrsor ig t rg, rä, renn der? "T" d, who the 8troanteumr # varrioät »4 vm testua tuetamd baimtlust, aiaiente» on * a m & sosbebeatamwt »howa worth ornteUtg md da & der Xm rgle # as @ e @ rr ins wltertl3.e@ra _ a @ ioh eutse, at rdrd e w = der awtsai, des d "at""teu""sriohtf va tat" anntnrR 2-.a to old mi m Ntean etam ve »« Dest änd la @liedi "1 @ 1! 1 West Sl «isrd. 1 "amttmarirl @ a @ e @ die äie 8t * a» iou «VrsieL» vm .e. tost " z rrtnt at w tiwesa, wurr, Ima" t ", Bs »lts b» to te « b rx1 40 " 1 wis0 In the bottle of a power control device spraying on the door bentoht disue belepielawelue from a semiconductor material of tediem Zuotund -wu3 Llektroden hem connecting deruelben in is called in the electrical consumer circuit, and the direction can in general be of the type indicated in the German 2atontr @ n »idung E 25 592 VMc / registered on 25.9.63, than 40 eobuniamuesorriahtung boaeiohnet is. here asked all- However, the semiconductor material of the tuned state has an in significant negative therred.schen wideratsnäakoeffisten, so that its resistance falls to the extent bsv. increases like the temperature of the control device wn test state increases bsw. fills, in a state dun has semiconductor material in good condition at least »parts of the Uaktro- those that are in a state of high resistance mi in ve®entliohen isoIXierD & hig are so that the ßtrontlug through these. in one or both Uoh at one value blocked below an upper threshold of elongation becomes, the one with climber or #eruog of the temperature the ßts o seteuer » rrioh bmg from tosten Konzawd lowered bsw. is fetched In an aed W s « Zfrrtwrd has the semiconductor .. mteriai from lsntem ZMtf ster MUA grisehen dost hloktrodee, who are in siasaor «dereß Z» letnd lotinds . die säe eggs never dsig * wtdoritand UM in weaent @ i- e @ r @ lsäusied, so that she is the etist of or in both nt obesiUb siaes lower- psdb sehwllenre A ar darr Spg »tattln # der oö @ atalls when increasing or, Temiuderuqg the t « porwtur of the 3 # 00 ## eteussvorriohtung of feet condition geewekt bsw. is lifted. Serve at least the existing parts of the semiconductor materials fetal condition and electrodes are through 419 in weseatü 0j sn constant Jpearn and modulated, which is connected to the electrical schverbrauoiutsat z- adcreie did, they were in w- sentliohen a%; enbUoklioh from their blocking state in transferred to their conductive state , separating when hrwn the Stroke provision of solid firing to at least that previouslybv®timten high tea " rjsturwert the upper Johwelleuwert the spanu m g on ainäestenn the kunetanten in weoeneliotien The value of the applied voltage is lowered, and never will essentially instantly to their conducive condition Converted to their blooldereadsn state when heia Aökfen the: iiro m teuervorriohtueg ran f condition to at least the predetermined lower tea performance value of the lower level value of the voltage to the material to at least the in weenUi- above constant word of the wWelegtea Upetermination angol Ä obea becomes. By gauged flour of the semiconductor materials from tests additive etand md bsw. or dusii soaped choice the values® of the When tension is applied, the tefperaiurws where dle rorrioht « g en aw your bloo @ dereradeer Yes your leite» d «supply eteaä and uegekeärt can be transferred in advance. Although the inventors «both in the control of alehehresot- uad weohselotroee verbs i suaheretroskreieen applicable tot, 1 "sm with the wüswretmpfisdliobrn tax system also this er- finding with particular advantage weohaolatraeeerbrar control, and in this respect is essentially = kon .. constant voltage source a weohoelspsnnufsq »lle whom take care of the electrical consumer use marbises that come with denebuenden and mmehuanden gohwpllenepax @ nrrten the least present = parts of the semiconductor material for the storage of the weobselstromeorbrsuahers at the Brhi.ts «der Stronstauurrvorricbtung Fron firmly «state on the front side # - required high temperature value vmd mm interruption of the -ß norgimreraorgung des weohselarbrauohera at kbküblrn the ßtromsteuexmrriahtmg Fron fixed tgats »taad on the advertised low Terperst original value interacts, with an essentially conateate Weaiuselspsxuaumg. In the case of a few such Weohsolstron- stewersystes, ®shen the least existing greats Semiconductor materials from Lest «tustsnä« Lachen den Blek- checks if ei * in ibren conductive ä r '; &"fiar systam are above the lower 8 threshold relaxation value, in weaentiiale instantaneous and interwt # ative Brend every half-period of which there could be a substantial change in aug in their blocking awta, M but when the ltonentsu- worth the Veobnelstroaes to the Bullert niwrt, Mr die Duration ran intervals that were larger or smaller in size in which the 3trolmtruertorriohtung of fixed 'r Zuetend . under construction * over the low Texpersturwert?: lt or heated wfrd. In this way the prosentural relationship nis awinohen @ntregung und excitation of the Weohseletrom m rbrau- earrrs the temperature of the power control device of solid state above the low temperature value changed so that a modulation of the Woohsel- ntswarverbrauoher sugef Uhr ten durbhaohnittliohen electric j xtergy is made possible. Make a point of view of the heat Claimed Stroretenerrarriohtupg of solid state in Abldtigkeit ton the temperature of the environment are wetted the one who influences those in such a way that those (the liorriohtung ) estsprzuheerä the temperature of the l vgebwag warmed baw. away- is cooled, na that the Zuteü @ rr of the electric änergie: u ER- the elekUisohm Verbrsuoher and Unterbreahtaag of En giesutbba to serve according to the ambient temperature m is controlled. ksch an other point of view of the Brfir- dun4 kmae nie - 4 srtea@npfindl.iobe 8tro «tewrworriohtw (C ton fixed state by means of a special are heated or exhausted, if the radiator does not tax » orrtahtuaag of testing, Zuntaod did about the predesti« - th high T "pesw" rt heated when it is below 91x ", 4t, and by the power supply from test condition to below the pre-set low tempax u ture values® It is allowed to cool if the radiator is not under stroas stands, so the Stro®nuthhr sat on the electrical consumer in the electrical load atmosphere and the the- this energy supply is controlled. Lia electric stand rsh »- krein ka nn Mr switch the radiator on and off should be provided so that the control system has four terminal men and with electrical independent and, against each other Ioolier.- th 3troakreinen ttlr the consumer and tUr the Steuerarg is created. After further testing of the bond, the Otros- control of the test state caused by VM other variable sizes, for example, one prints lights aeuohtigkeit or the like, to have been influenced and to this ansuapreobm, and in these balls the conductor material has v = tentative state a suitable negative resistance-- Koetfisienten in beoug a «the entering size or the entering state, there was no electrical power in the wetness decreases and increases, in the dnr value the pruabxe, den ilohtes, the Feuohtidrai.t or the soneti4ert, the atro ».. otwerrorriotituag von Accounts Zuettn d beeintlueatrri3 bm. ot, so that the electrical consumption is instantly supplied with energy for essentials, if the variable size is at least over a Roräeerb- timmten a high value of sunJ.rat, and so that the hnergy caused to the electrical consumer essentially instantaneously is interrupted when the variable dimension is at least au! decreases to a previously set low value. On the drawing are some Ausfithrwagsbeiapiele the Lr- Zinde ng shown. In it are: Pig.l a Uohaltsohema a form of a eustandeemptindliohen Control systems according to the invention, some on warmth anapreobende 3troasteuervorriohtuarr "solid state the UAgebufet influencing them "pesäuuc addresses, gig.2 a Sohaltsohema similar rig.1 mm illustration an arrangement in which the heat-sensitive current stone: Solid state device by means of a Siwrstroakreis is controlled, the one elex belonging to the rorriohtung # trisohen radiator travels, Fig. 3 to 6 representations of various designs of the ' size- or sustandsabhingigen Stronsteuerr p rriohtung vo r solid state which can be used according to the invention ", 7d8.7 a bps-Stren-Diagramae gur , vereneohaetliarhnee @ des instantaneously = behavior of the rhinestone euesworri @ hg of solid state after winäung hlnad.ohtiiah tension and Strm at Verälderwgfn of the same parents & s g1 & 98 to 1ü Spannuug..Stroer-amme only foransoiesuliohn @ g der Effective wines of the Stronateuernörriohtung of solid state according to the invention in the = installation in a weohselstrcn- Tarbrouoherstr » Creis, of which a & 98 to Verameeulia @ hux @ g the Sporrsustandes " . Tig.9 to Veraneohsulioäung an abiwew_ dellen Leitktivkaitszu staodss in the area or whether «haib the upper Sohwellemrertan the tension and 718.10 mm Vsr = sobaulio b g of the modified I conductivity sust to dea when rrem @ g approaches the lower Sohwelisu value of Tension serves, Tig. il .irrer resperatu r # apanr @ qis # @ iturr snr resrureabewiliohe der Aöbhäugigkeit der StrarasstauervorriohtM = s lestea zu .. was after derlisdeeag voet der @@. ya @ peratnr, ? 1g.12 eia irei t mgaaobo »similar to na. I Zur re iehu @ der Ter wen dunc one on ampreol @ ercrrdeä @ trossis @ esr @ or ## ri "t Ung v = solid state in the star" tM4 71-g.13 a De ratell u mg only Vsrano chs uliaag a A1 torn one on V rwk wao, Dreadan Strssts »rrorriehttng v = fistete Zuodie in d «afo t« according to lig.12 can be used, fg.1d a @ rualc- @ psonungo.-Kur @! to the lora "o" uliohm "der D nw 1mbh uagl glxit the 8 tum tion of fixed «Zu.- itiM na "N IS., 12 md i3! YU.15 a zuitw @ g @ rraähnlieh .l to Versasoh m & U, rrg the #use of an on Youaäit amprean B U aamteuar- vnrriaht uni Boa t often state A in the 3 taxay stage na.16 a Welmehis-gp @ urre to advance »@auliobewg the dependent on the power equipment ug g fron fixed Zwtmä after? i6.15 from dar ä "'W-%" tigk! t, ? ig: l? eia is @ 3r ädnli @ i8. i zerr veraruelma l ia ba nmg des vonnrrrd > ate ai »es lent tiaä] i chem sto» rvorriah d BEFORE it was in the 8tsmssaY.tare li @ .lß sirr 3Arät @ .Spaaauog @ sar @ araneoh8uliaäder Ziai @ tait br etseaotraa s tahtmag regt "to- atwä aste? m.3.1. like mm FU.l ersiahtlieh # is a Vorbrauahsrd tramkre that is allgeshda is denoted by 10 , aa hlemänen 11 and 12 at & * .- they were in turn with an essentially com tant e ce Weohesletrarqnelle connected a "In dem Verbrauaheratrai.- Kreie 10 is located in l "txiäsreta" (consumer) 13, the on eimm resist , a coil, a motor likeiH g f * YES » p uffl st » ntil, one h rluinviokl around # ; or the like. beatshme can. Lt row with the Tw: raharetroakrein 10 is sitn by means of L 15 yaä 16 ein graden.- or eust um daa bbo »& L gs, beimpielwietas Utromterrieht un g 14 ros fixed Znr- itam eaoh11tet. D. # -3tr o » temrw.L wio h" = messenger $ bat eil 'C111iü therniiWideret1 @ id1 @ D1 # sieuten nad provides the verb rauch « 13 with ßmrgis bar. . ua te rbriaht the Emergixs af tar en dioae depending on dor dasan ms wiria m g brought warmth, The tawrvwcriab. tmg 14 came in A bbängi ness the @ @ esptratnrlrsdi rgru @ rtt de s. litgaiung the consumption « 15 etrners" and the @ erbranoh #. , räie @ estead 13] mm for his part; if erhein @ roät, the pstu @ r sailing around . If the temperature of the Unge'iaa4 au a rrorlrr1hs offensive word becomes aest #er brwaeb « , 15 1'u 81rr .3'fi. @ 101stt "@ i @ r! 'Tl @ ihhtlfüt« ZumtiM $ w n; tR _ ma- , ,, where dsd the Tefratur weir Uffl troraia "rt, md vum die. »Wizutur , the surrounding area Ola ei @ bl . t om word aaui u rat, host of #artaaar 13 hatttr . »I trqw &» e, mg att dams riiu kaa. the bun48 --- an £ ice cream desired value can be achieved. In Jig.2 dit. @ Arelbe Amx.änung 10 becomes a Vor circles are used, and the same parts are used with the same m Hesf »lohen rewarded. In fg. 2, however , there is a Vorriohtung 14 of solid * Zuetanä by means of a sehösigrax ele ktrInebe n radiator 18 instead of by the Tetnr Udgeb = g controlled. Here is the electrical body 18 in eia Sieesatrodkreis 19 gssobsltet who is on one side is connected to 2 ll on the n 20 and 21, the @t one Any suitable voltage is supplied with energy could be. In the row with the üteuerstromkreia 19 pray an apprentice 229 of the electrical body 18 in eingegahslteten state Än ergy supplies and eoo A overall so held the electric heater 18 etr au hon seeks. So when n the owner 22 is ineeeltierter mg der electric heater 18 is live, the criminal steuervrorrlohtuetg 14 of praying state on a vobreetbr ton value heated, so that the electric consumer 13 wtt Energy fed was d. When the near age 22 is we $ eaohsltet, the power supply to the radiator 18 is interrupted , mg t " Stromteue r rorriohtung 14 w 'tn solid state is aat predetermined value ohlt and does, the eleke lerbrauroleer 13 staue. in this way * Im Mm According to Jig.2, a relay device for fixed Ztntanä mm meals and meals keep electrical consumption «» 13 according to the Gohal tu position the switch 22e and the : J, expensiveetraskreis 19 itat von dem lastetromkreis 10 una bbänidß e and Steueretromkrels 19, an electrical circuit in conjunction aleioh mm Lastetroukrein 10 low voltage or * lower Be performance. The Stromateuervorriohtung from solid state after the establishment finding can generally be of the type described in deutaohm Potent ( £ la tent application B 25 592 VIIIo / 21g ) old iieohani.emuavorrioütung means ie t e md this l orrieh = tings contain semiconductor zitorialia of solid metal mm Control the flow of electricity through them in one way or another in both Ul chtungene and in this wide Jimne are the in following as "I" bleitermatertalien fron solid state "loading Drew materials to yeratehene Jieda iiaxerialien can Tellurium idea: eleaide or julfide of eats every essential intermetallic compound # b-der any Netelle or non-metals or / Iialleiter # or solid Löeun®sn or their Gemlaohe envy Particularly good effec- results are achieved when tellurium or jelenium tenrstariulien helming basic materials siM * De ue basic have nateriuliene selenium geli sulfur and ineboeondezetellure unusual atomic structures and chemical peculiarities and It will also be anomalous that connections of these asterials as well as connections of these lixterislia and with these to Do I-materials work in the semiconductor materials according to the Invention of the read or polymer type, which are a kzva- lente I load eut »eat, eat is take, was this an important ger lactor is the one that ascends the semiconductor materials makes it possible to adopt different Zuotanäe. These are a highly orientated or, in general, amorphous solid (aiohtiacietalliner) state in which a möglioherweiae verh t- nism äM small crystals present bind that possibly are randomly aligned in it (the relatively "8ig small kri.dtslle are vahrecheiniioh smaller than oß.U, 1 Ju and Show at Röntgeneaäittrdctäon an i'ulveranordauag) and the a state of high resistance head of mza tsnä is, mi a temporary and @ $ overer e firm tendency cleared out by order, with the nög-- lioherweise, rnrrhaltniaaUig fie äridtalle vorl & äm sIaad , (The wehreobeialioh greater than at. Ü, are ju 1 and nftgen- dittrrtion ein Kristallawsier seigrn) and the one state low resistance and, in essence, a leader country iste "and the like. iaburrvaistr eia temporarily melted State aea K ts v "higher Let me lstmperatur pre- handeu setz komm> nzl who is also an austmd geriagm vigsretnwei mdt- in -wo- "n heitersusimd is, It becomes afnon that the mitwixkeränen Ilaterialie m (metals, Non-metals, pre-binding ex @ between metals or semiconductors), - which can form compounds, or ieute Maurgen or mixtures sohe with Gien aruuduateriulien in the I @ xlbleitermuterialien Fron solid state after the discovery or overuse of the aitxir. Any latarlulia or the Gr au " teriulia act in such a way - or the Nei6unf; huben, der, & rt $ u work, - that they in the semiconductor materials, and it will taken, du @ i disue tendency especially to hinder crystallization then stamped int, denote the percentages of the base material en and the participating materials ierbd "t..3 emgUß removed are obscured from the stoahiom stris and eutectic foils the I a terialien and ban, or run the contributing liatorialien refresh themselves with strong crystalliaieruagahinderude properties, like beiagielsreiƒs Germani u mr, arsenic, Ga l 1um od, the like. If tolglioh, as here, the semiconductor materials are strongly They teach that they have sational and reasons, - Burn this sugelas.3en will, in their highly irregular or general anin amorphous teeteu ßtruktursueta A back. Below are some specific examples of some of the üalbleitermateriulien neoh the invention indicated * the reu satisfactory = Brgebni.ßeen have led, (All Pronentuhlen refer to parts by weight ). 25 9 @ poor and 75 14 time Gsaiao # 0 e from 90 r; Tellurium md 10 Gormoniu % also with the addition of voam 3 5? süi @ lua; 75 iG Tollur and 25 1G Amen; 7198 % Tonur, 14, ü5 % jeeen, 13906 ß Gallium and Reut 8l.eieu@lüd; 72.6 ; 'd tellurium, 179 2 g @ arsenic and 13p2% gallium; 76.6 x T®llur, 27.4 % Galliu ma r »nid; 85 j # tellurium, 12 y germanium and 3 % rilisiuai 50 N Tauur, 50 Gauls 6792 ; j tellurium, 2593 7 @ G81Iiumrsenid and 7.5 K, n -Ge rs = tuu; 75 : y Tollur and 25 S @ Gilißiuai 75 Tollur and 25 Indiunantiaonidi 55 i @ Tollur and 45 9L Ger m aiumi 45 i @ tellurium and 55 ; @ germanium; 75 A gels and 25 YG arseni. 87 ; t tellurium and 13 y, aluminum; 90 -, # Teilur and 10 % Rluniuiumi 86 > Tellurium, 13 g: aluminum, 1'9 & jeleni 50 5v tellurium, 50; @ hluminiumi 50 IG Aluminiwate l a.uride and 50% xndium telluride i 50% (aluminum telluride and 50% carbon telluride. The above-mentioned primary materials have negative values Wideretaadekoeffisienten, and those, the selenium, silicon and containing dollium arsenide, raised exceptionally high negatives Therwinche resistance coefficients and are particularly suitable for suitable for the purposes of the invention. Allah silver telluride hftt a raised negative thermin-near wiaeretcurdekoeftisienten and can, just like selenium, zinc and gallienide instead of the semiconductor materials mentioned. or zueätnliuh to serve to achieve deu wumaahten wood negative thexaioohen Widerntandejcoeffislenten can be used. The formation of the semiconductor laterals of dead Zuotand ge = B the wind = g the round material and the ultimate acting illaterial% n in a u u ng lnnierteit Por: dIann örver to a Grind powdery Xon rivets and be thorough. You can never get into one Dichtverachlosnenon quartz tube am about the : 3chrielzpunkt the Haterlals with the highest melting point are heated. the molten materials can be cooled in the tube and then broken into pieces or worn that drum on the right shape to image "tng of small bodies or Grains (so-called pollete ) , or the se- Sohmolnenen materials can be flavored in vurge e ßr «K eforreen for the formation of body rows or pellets been poured. Da® introductory mills of: 'materials Take place inside in the presence of air or in the presence of air, yet the former procedure before usaiehen $, venp dan pre- hnmisn »in considerable amounts of mounds in the finished Xarpers or Polletz is selected. Instead, cum on at the Formation of the Xö ffl r or Yellete adult smokers who nibble powdered materials under pressure of at least 70 kg / = 2 A000 pst) so long to presemp am the powdered materials fully hae yak t geerorden: and the vvllotüudig compact M wtordemm tfsrtalim can da = in suitable Wise warms deaa. In a pa asked it see f »34t, and armr bereondd» dam, w «a in im ja der ob = alemea Weam lp formseu Body or Fellote Areen present int, the body or gassed Pelleto itself in its confused curl or ullge # MOix1 smorpheu feut state, xW: i add .: rd high Widerutaneu or ; 3pe -.,> r- ziunt: rrid be.-'in@jen. In dvrurtigon cases you can go to: @ oluci.'i'tu, der: itrot @ ateuea-rc) rrichtur4; en v.in feuteu Zuotnrtd ger: ü il der Lrfincluug, where the arteuei.-ariG, des ele * I: triechen: brvueß in the lnuov of Ialbleitex ° ateriuliou of feA $ eu Zuat; u1d takes place, wihx-cnü the formation of the primordial or 12elleta blue electrodes embedded in diene and / or can be attached to their holes, and both are prtktiach dui. # cbgefWirt. In other fullness, and serve, the honor of the cases dur, eu spawn has shown that the in the above-described Wines educated body or Po lleto eich borrowed in their habit more orderly or crypto-open state, alƒo dou To @@ tuad gerineeu Wideret and eu or high conductivity: be-- iindan What waburechsiulich choose to dao lcu -ic dependence of W lL lead materials during the formation of the body tubes or Pelleta $ urUelaufiüzren entered. It did so in serve Püllen it is necessary that the body or 'p ellete or parts of the over their curses in their confusion: juntand Choehregel- loien Zuetand} or a1! common amorphous ignition and dien came in different ways, briegielsweiee using pure Ibxterialiens by Zusata of Yer = reinigtanaeni @inaob? Üa @ n from üeden in the käme and bar. or in the ObertUohen or Wi nsfl # cl m ; ataba ».aob dmrah L = chiu0llv Deurbeitu ng , i.behah len in Smuletra ü gebLine, Schlager Push, bend, fiitzon or linwirl: ui ab- from Ultrtjucht.t- iacileilg motul.lurßinelt durtai education pbyeikuliocher Gitterverformu ng en by @@; xr@ebel.ndeln and 1iboaltrocitani :. which radiate through ff energy radiation with a, -, i3- or j --O; chenioch through Line ( hlüsee vun SF @ uerutoff, t = ulpeter- or fluorwaeusrotofreLiurc, chlorine, Sahwetel, I.ahlexwtt) if, gold, 1: 1ji; el, Liuan or Ihn or by inclusions of ionic virvindunE; eu, a: ichl iesslicli alkali or.: llutlierdiiotall- z-ei # Ll.nauz i t; eng eiektri..cu through puluierouderi 1'.troL. # g or through hombinution dieuer 1iaanalmn. If the whole IC? Lrp.erclw46der 291 solders in any of the zuegegeboneu Weioon in i h ren Wirranuxttnxd or generally amorphous swept Zuatund over- free wind, bare electrodes wa x, * eud the ßildun- the Xt) rnerclun or! = ellete embedded in it, and the . trctaregeluzg by means of such ßroaatouervorrichtungen of the feeten state was succeeded in their lolgon. An atxlere Way of lärieiung the : 1 electricity regulation in the house is needed., You bet in the body ohm or ielleta electrodes singebetht. those who, with Auuncduae der Opitzes, with ialel, .trioober Insulation provided eiiui, beiepiel®weiue with an oxide deƒ Electrode materials. Then on the electrodes: Iti %) arttiße brought to vibration, which the effective half-tester l al uwioen the un-insulated tips of the electrodes 1ueƒen, e & nen Virrzuatauä or generally tu m rphen solid Luataud of high resistance or the Sperrzuntatui c @ nineehmitn. or in tlialn inolierföhiden Zuotmd) betindea s The mib l eitt @ rxfalten San £ eatan Zuntand take the Wixrsuslmnd lea @ reefeer ans probably dealalbg because. the materials at the a uftrin eel1 abgrk.t, or you can whether » further through one of the above aahrietavernt "serve Zuntand enevmnhta @ t. ßlekiroden can be used in a suitable manner on the overflea or Films on the pad are afebrruaht, and the renewal de® Utromes then takes place through the surfaces or films. if the ünterla &; e a ladder, beiapielewelee Utabl or the like , int, the flow is controlled by the surfaces or Films swirohen den Alekiroden and Unter le4; e, and die ünterluge itself lukewarm, if requested, form an electrode. if the document is a Ulohtleiter, for example ßlao or the like , int, the atrame control takes place along the surfaces or nlw exined «» lekiroden. Rine special satisfying lorriohtutgt the auderordeniliah exactly and in the Heretelluf loves is repeatable, dueob was attenuated a thin PilmeD ium Te11utf Aren and Ge r » 1" i t91 Sui a, smooth sub u "dusa * An ea ton wolfrarurlekisoänen na dem auförsahten Mushroom generated The MM can be opened by opening on the same side dieeer nsterisli «sur : j ohaffvm « L Crro gutobt @ uo vrd solid pilmr can be formed, or the felt ksnn by means of brine the sutodestolgender locations. «Fellur, A» ser t # aer @ u n fut * The -3teuexung 'den Stroms nitt®lo der Stromteuemowioht u afn from Teeteer ßnu: tatü according to the @cfiudt M also came across the Surfaces or films made of the unleaders. Particularly good effects are obtained from this craze for hatred. Mer can aua the surfaces of the bodies or pollots Iialleitermuterial, the oioh in their suagariohteten crystalline solid state are in one of the above heard bohox are cultivated, since surfaces or pil »are created aen, which in its general or Wirrsuatand e MRIN a w rphen featon Zuetund bdzJden. The electrodes are more suitable Wines on the surface or mushrooms like that Body or Polleto attached, and there the man * the body or Pollots nioh in the more geoxd »th or krintallinen _ solid state (low Adersteaadea or gmttand of in we®ontlioüen voilotünfligen Lsitfühi & eit) and the superfluous witch or films in the confusion or all- common amorphous state ochen resistance or state of in veaeattliohen complete insulation ) are, the:) tronic control takes place via the electrodes in the gauptnache through the surfaces or films. Imntatt Mirper- # 2 hen or pellet form, the seminal conductor termertulia can of firm condition according to the above description on a ge » suitable smooth untexnohioht ade coating is applied, at®pieloweiee by applying in Vskum or the like, no daD Oberfifiohen or mushrooms the semiconductor materials class the sub. luge gest: haffes be who are in their uirrauetand or in general »ima amorpban feeten Zuatanä (high solubility it Arsenic and Tollers are formed, and in the latter P all who. which the overburdened Go% wanted to a temperature below dee sublimation puxktea heated the areene to dew the film vergluiohmhßlgvn and fasten. The thickness of the:.: Overflowing or pilme chews without consideration whether they are suitable # network treatment of height or 20 11ete on these or formed by applying to substrates Bind, Imm -, im in the Order of magnitude of a few l0. up to the thickness of several 100ateln one. Inches or more. yie -l'Ilektrode: which is used in the Utrctauerriohtungen of fixed tension after the invention can be used actually also any good electrical one Head # to be recommended for materials with high ; j ohmelsct, sauce tantali graphite niobium, tungsten and rololybdenum. Dieao Älektrodeu uind usually verhültnia mM 8LG ihert compared to the above mentioned semiconductor materials all. if the lecterns are not in the body levels or 1.11.t8 be pickled in the above-discussed tables, In never at obertä, dohan or pilmen of the body rows or pellet. or the ones brewed on the documents #bertUeben or mushrooms in a better way than ». & be e-braoht, examples wines by atchos @ngreataem, by Anaohmel $ en, soldering or by Aufd am pfen or the like. at the unfamiliar place. Preferably after attaching of the electrodes on the devices a 'pannunge # or ätrometofl to the effect Lebruoht to the electrical contact between the electrodes and the semiconductor tubes in Put it in perfect condition and fix it roughly. the Itrorateuvorriohtungen can, if desired, encapsulated will. For purposes of disregard, it was assumed that the control the itromee in the Verbruuohercc tromkreio 1o im weaentliohen in a uberlüohe or a 2ilm or a jo Äioht the Üolbleiterauteriule takes place from a solid state, although, as above, the: current control nuoh in the hyaeue these materials take place kanci. Yerichiedene From. Uefülirungutornen von Utromsteuervorriohtungen from fixed » States that work in this way are unified in Figs. 3 to 6 durgeatellt. According to Pig.3, the iitromsteuasvorriahtung 14 of fixed supply. stood a body or a pad 25 made of electrideh Have conductive material. Servant body or the base can either be a metal support or a three- dimensional muteri « a in eeinet4 georüneteren or kriotallinsn fixed. utruktursustwad ,, the state of low resistance and im be of complete conductivity . To the body or the base 25 is a surface or a Film or a layer of semiconductor material 26 in solid State that is in its confused state or generally eaorphea fixed structural state, i.e. the state of high resistance and is essentially fully feasible. On the surface or the pilm or the layer 26 dead in suitable wines killed an electrode 27 that trieoh conductively touched, and the line 15 is connected to it. closed. The line 16 is with the conductive body r or the pad 25 connected, the BSW. which acts as an electrode, and lines 15 and 16 connect the surface, as I 11m or the layer 26 of solid semiconductor material Zuitand in series with the consumer group 10 (fg, 1 and 2) o tier consumer circuit 10 extends from the Line 15 through the electrode 27, the semiconductor material 26 and the body or pad 25 on line 16, and the control takes place through the semiconductor material 26. Lia Strometeuer v orriohtuag 14 fron solid state (Fig, 4) is Uhnlioh that after Pig, 3 * has a second in addition Layer or surface or a pilot 28 of the semiconductor conductor teri.ale of solid state, the bsw. he also see in its confused state or generally amorphous solid structure. Dew state, also in a state of high resistance and essentially lsolier = ühi,) CSit is located. There is also an electrode 29 in a suitable manner at the illäohs, the Yilm or the Soi ioht suo semiconductor material 28 attached in a solid state, and on the sheet metal de 29 the line 16 is connected, because alav dis 3tromatsues v orriohtuus 14 of solid ingredients according to Pig. 4 in the consumer circuit 10 (p4.1 and 2) switched on Will, are the layers, puffs or films 26 and 28 of the Semiconductor terial clay solid state in des V'arbrauaher- circuit switched in ksibe, and this extends calibrated from the line 15 through the electrode 279 the lead conductor material 26, the body or the pad4; dun semiconductor muteriul 28 w nd the electrode 29 to the line 16. : Via arrangement of the Utrometsteuernorriahtung 14 of fixed supply stood after Pig. s is similar to that according to yig. 3 and 4 0 but here there is only one hege or surface or one purple 26 of the semiconductor valley of f eatem Zuataaod Tor seen, and both Älexttoden 2? and 29 are at ikr dieuem bsw. di eser afbs «ht. The consumer electricity circuit flows from the Line 15 through the M "trodo 2", the semiconductor esterial 269 the body or the U * original 25, the semiconductor rate "26 and the hlex tw " a9 M of the srsitm 16.0 as according to JUS-5 so here 'suari Se hLah l n or or surfaces -ä « rleitsr m ls ha Rsiw mit t dm '! frärsu w l « stro a Cr! rfs 10 gessolualten. ha in the devices according to FIGS. 4 and 5 two in liet h e held layers or pilrma or surfaces doir semiconductor materials 26, 28 are used, is the The measured locking resistance of these devices is greater than that . the device according to fig. 3, in which only a single head or a film or surface 26 of the l1albln teru a terials is used. According to 81g.6, a pad 30 is electrically insulated according to I-iaterial, Lebeispielaweise ülan or the like. used, and at a short distance two electrodes 31 and 32 are suitable Neatly attached to the surface near this pad. The kichioht or the film 26 made of lialblei termnterial in its confused or generally amorphous test structural state read on the pad 30 via the electrodes 31 and 32 brings. The lines 15 and 16 are connected to the sheet electrodes 31 and 32 connected, and the eretreokt eich from the line 15 through the sheet metal electrode 31, along the lialb- conductor termlteriaU 26 and through electrode 32 on lead 16. On these wines int dun semiconductor material 26 of solid stood in series between the älätröden 31 and 32 in the brauoheretromkreis 10 switched. As already stated above, it is assumed that the Ii a b- and lsi ternateriulien 26r 28 from fest « Zeurtaad stob noraa @ err- events in a in '..19e d 4 sorl e ntiesten Zur1 & t (W irreuatand ) or ullt; amein amorphous solid ( niohtkrietulli- nen) ; j truktursaetund are located, but possibly related must have small 1. triangles, which are irregular are aligned in it and in dius @ :: m indicate atrukturzuatand form a high resistance and in the weuentlioluen a non- head of duratellen. By suitable choice of I.kstei, i.xlien, nen the high tiäeretande values of the semiconductors, teriul% n fron feutem Zuat @ incl and you can respond to words am brought to several 1, ülAonen eagle owls if this erwkneolit iat. when used in normal consumer troughs # circles have the conductor muteri-lines of fat condition Tuners like to strive in their structure to 3t and high resistance utandeu or the ability to insulate, or in them return. In this hoohdenorientiertexi fixed structure # turzustund, which at the usual usage temperatures be # is allowed to have a large number of Drociuel centers or -best; inden or -conditional gene which the Utromtr4er thus hinder the already mentioned high resistance or the lohe laolierfühiglosit bew. the Uperrzu®t touch d. If the Utromregelvoriohtungen from feetoi state to a Pleasure or pre-brewing circuit can be set up in a row, to whom a veründerliohetlleiohsiwannurvp is applied, so never got lost in the Upannuaga-3tron curves of the hig.7 vurannohauliohten way. At the 3pansiung 0 is located located dau iÄ a lbleiternaterial be fixed Zuetund mad in Zuatunä high resistance, i.e. in Sparrsuotsnä: If d% . unoccupied bpannuag is increased, the semiconductive material becomes heated and purely resisted and nirxated gradually, like this inclined at 35 in hig.7 iet. In the liaible leader material there e® probably preferred points between the electrodes, which are of a lesser conscience than the lteat des llulbleitermateriala, and in these places more dtron Eum come flowing, which has the consequence that an increased ir.- occurs at these points. If the to the iial. msterially applied aparuiung vert B ( the threshold or " Together" 9-ert of the Spamzung) achieved, at least Share the lead conductor acitƒriula $ like the electrodes (PUen, Mage or paths as well as the electrodes) on a critisol » Temperature increased, at the aie in the weeentliahen outside assume a changed state , the state of low resistance status and the essentially complete head. Lie will Bngenom: zen, which this iiuntund, as expressed above auagad, a more orderly and / or a geaohmol- aener state is. Probably the ii tro®trtgerhe are there - zen intrinsic or conditions or conditional in these at least existing parts of the liulbleiternw terials in these states largely reduced at Zai11 , so that the Gtromtrllger avalanche kindly released and the Zuetund low resistance or substantially full conductivity is created. mea in weaeutliabx . augexxblddiohr, old these - minor- ste » Existing T ülb d» hal'blsitermaterfials from Ihrwr @ State of high resistance or of essentially madness. dLgm Ieolierli higMit Yes their state of low merataades or the one in essential roll-up JA d, tf U higkett is 4 m- Where. The interrupted number 36 in Big # 7 threateningly indicates. . Mee tension across the gorriohtuu & in their state low resistance or essentially complete i "tlühigiu e it remains essentially constant at the value #H, even if the Stroms nte up to 37 in Big. ? is shown in wide ßrensea etemen and can fall. In this context harg wind anger @; e that the leading. Shops or strands snisahin den niedm an Quexsohnitt in the measure sur # and from "brsrt" in d "the current strength rises or falls, so that8 this aew aohatt mg . The state in waoentlirol @ n koostsnter Spanaumg T @ get md chilled »xd«. Vein through the strot these aindeateaus to @ e @ rdenea tadle dm semiconductor materials, v « tests? asa * sM ant a ksdalsa h « word 1S a w "" e te hatme outside $ t1 1i br Tochadeü md` iu-. fe @ edes @ rs a @ teio @ orlt x @ rsdea @@ Ws dir In him * Z "" xärig taderstsndos or in , vomtt- @ `leti @ Vifer ,, so that ü anaeohl i wbib sa @ fiatrüldp Or in 1 @ tr @ oür irr alia @ a @ c arrosrpS @ rrrse. hehm toter: m t fur @ st laas @ a # ability to return., iIit other who tea, die- etromletten.- the threads or ranks between the cables are under broahsn when the uur state occurs. This in essence Eye-catching raw hold on the. State of high resistance a or in the less fully laoiable "it does through ,,, F the return gate 38 in Fig. T verunaohaulioht. The acceptance the current'm herbei- below the critical value% luuui be guided by attaching to the electrodes of the device applied ipamiung reduced to a relationship under Y11 in 71t; .7 will. These mentioned at least existing parts of the 1ia1b- leitemateriula can wi Is essentially a%, rnbliolGlioh in their structure to A and low resistance or in essential lent complete solvency surüoktihrtihrt to whom again heated by the applied: 3pamsung gentagend will. The Upamiunga-Stromtärke-Ghsrakteriatik of the feg. T is not measurable, special, only serves the Vvr sa - eoäauliohung, because the relationship between the insulating or resisted to the resistance in the conductive state brat & ewöhali oh more than 104.u00. In state of nfesirigon cons stood or in a Leittigon state the 'resistance can be a Oha or even less betaragea, and the Haltemtras me those Yvrrtahtung can therefore be essentially V, Xe, Snu ngs ..3tro u.Charak terf.eder Stwmi to uelr'i ": t'tsi Wen solid Zuetwed: ges is the egg # n aimrg ald & cl n aligeseimen worth the W @ taad, Yerbra ueM » @ .; You search regardless of whether the IV- Kushre the Pig.T equal or Weobsolotron is wounded. the Manner in which the strobe control device of fixed feed was after the discovery in a Laet- or Verbrauoherstr @@ a - Kreie works, which operates with Weohaelepalz (FIg.l and 2) ben idt, lat by the Upannuage current intensity curves of the high. 8 to 1u vflrunoohaulioht. When the itro «t: Health regulation regulation 14 of solid state are in their state of high resistance or iperrauetand, and if the applied alternating voltage The value is less than the threshold or "Zuoü = enbruoh" value the tension of the device, the device remains in its rem condition high Widerat, Azdee or : J perrauatand, as at 39 shown in Fig.B , However, the applied voltage is at least the same the threshold value of the voltage of the device 14 switches the Vorriolitun4; in a few instant in their condition low% iiderutanden or conductivity around, as with 40 in Pig. 9 a% e; eutet. klie eraichtlioh, are the curves 40 opposite above the center line in Pig. 9 slightly edged laterally, and this verqnechaulicht the slight controversy: .nd of the above. 1 Oba or less, which the device 14 in its Zuatund low- in terms of resistance or conductivity. You see, too from Figure 9 at 41, the device its Zuutund high Resist ..ndee or Si @ erstend 'during each half-period the week rla panning inta r and assumes v # «o lreehseh. apaMtR4 mich d11 äullwert rt, 1 "1n der 8t rtu while everyone .öplriba umterbro ehe n vt " . larohlisßemd va , every noertntwrt tntesbnohund the att @ o @ rdurel @ papa @ ihser @ t one) r 111n N erioda äat0l4e den atsipai @ as taa #. dear you Spwaamw der aaplegaaa lspwn 4t e » ni». deataw tro @ wrla @ rrr den B a lbleit erm ta t ala das v1meielr # t> r g u heated up again, se eels are getting old, is w «« tliahm MW- @ lio @ dieh were everyone i ~ 1lperi # Ode to lettet again. Whom the itroaatitrhtrridAohtum 9 in toaiwa zat a " after the, prtsodut mm in its state low « wid e nrtaaAea oler dei Leitt @ thi @ Oa il t is mm the created @eahsalaaman priader riri as the fixed 8ahwllenarrt the djam uffl des l «rtah. * mg ( the In toipnten aha eilrar eelrr @ elhamw @ rt dar ip denotes wes), wate «e iarrtesa itti erartdan fait, tta in your the ri @ tptraletea of the X eehesIe trlapa @ sle, at they see the #erM "t xffl in their« i «taM high Yn @ taa. dem Od « 4 p: @ MM rwataad b ett rtet,> i at 41 in? M.lo psaUt, VerliAprt, eo you wlrstwat 'er an ovarian way itleit> raawtaa @ t paeäftton wi ". DM" _IM mm disar bpsaa> W wutit am Oberft ilwwt ~ dar $ pammm 4r 0tr rtawawsrishtM 14 lusm ass sth drw vorhtum t @ der $ pr rrdavor md der boilsahig »itäsu« would be " Jodur half-period of wooheoleps unä eosit the durehschmittuahe a t- - suf @ ur mm veri m uobaratsonkreie oinm- atolls before. from 401904h the voohrolop »wimi nrt oimmn from orlmat word date cis der upper eehwol # value of the aps, wi A de sp «wäsnor During each 'Mlh- poriodo so i «; md the wido »tr m d oo booh, you the aogologto Woohoel. A draws, nauand a "r4te" testifies to the contradiction * tu " m @Dorfd mg dl» ge nma tem aUM eato » available ? hurry the Ulfloitol »toZ'i & a geM heat m" 0 again incompetent m maäos. mooor 5 M toi the Vorriohr tuad 1d imxe »hall of ifoolbolotromerioio not Wedo: conducting becomes, Viril in tolpsr aio naloror äohwiloa m rt of the dyaanwod the rorrtohi »4 iezoihmt. The atrmsodslyrorriohtum 14 lost in front «state xmmt umm umd videra or 8p $ rzsnslrnd 022e rio diar dnreb dir $ p Um w ffl "" länrro dar LidA w- lio ä t becomes. From the d ffl lmoMiob- * mg wen tuet « sloht,., 2" tend aniot,) tann am nioät vdeier lei1oM wsdme b "die a apiol o woohsolopaamw & iaiosio »au 4ffl e .de der oloeo llemro = t der ep.or- mffl the Vorvto9 daoit the ßpmu @ am @ rdtso @ r @ e @ rieh tid. ! lram @. - s) - "M OMA e du d" dl @ s @ rrmldaosoo1 # wo @ n @ rimrhlorld: @ '@ uteh m: iao tu umm an- BUM got vldoxsturi » of dostani he £ LmM, dU" o essentially low in their condition Resistance or ability to exercise can be demonstrated the created 1 @ eohaeispanaung niM the same is the same the upper envelope of the tension of the pre-tension essentially instantaneous in the state . high resistance otwedes or Spe <rrsustawei is transferable, in which the argan # te Veohselspanaung did at least less than the one below Sonrelleawrt the tension of the lorriohtm4, and that at Attachment of a weehrel tension above "b of the lower sole" - w gte s der 13 p « aung der Vorriohtwage errend see in their state afeds.gen resistance or high reliability is that Vorriohtuag a n d the abgenaradelten RECOGNIZED Straaleittähi glmit autweiate der w «the value of the invested Weehrelspunnuxeg in Vergteioh to the lower threshold of the Disconnection of the device ~. »He upper and lower threshold value of the voltage of the 8tsonreglrlvorriohtung soss; test the state of the Reve nd des Mab leite m ater t slo der lorrivht »4 in Deemen state picked up Wüersteeard @ es or ßperrsnet a nd, and AWR elud the ski ellemertar mmnieds 4 ese each of IAher Uderstend is. As above sm los truak geb: aoht "they have geelöleiteranterialibn vm test Z tstsni with these Vorieh w leupa when imt thesmisehat W ide »üueds w # lauitiester9 um iatspseei -m i XMe * see the ob.w and the lower awwrt of the Spssurmg der ßgelvorri eb - tuo g with the tue deraelöea in the dun ob die laswea 42 and 43 in fg.ll waraaso "uliobten wise, tn-den adslieh The upper and lower parts of the tension swell as the tension increases Temperature from = da @ sgellts @ l. To the oba maybe an @ peno, dai the ats @ oa @ rule riobtua g 14 from test Znet "the swfpesmt" the tbgpiM s @ ns- genetst VIA ( fg.l ) mm you en esrunsebt is, d "the vo # rioht 8g lbnlctiOB in de. weeheelstro @ n @ ' o @ rerlcreis 10 with a tblce b «dp » tus of «05e 0 (19e!) Should ausuöen. ] Be a poor 1'mp o » ture of 350 0 (" 0 !) kean the provision 14 eta «8posrriäeugin woseatileiuion from 1, 0S M , @ '. " ei« a upper @ e @ relies on the span 4 of 103 # for a untesmmt @ ehwale @ ast the apawvmd v «a.00 Y have, uM hei 380.0 (100e?) bsm them aporrridrrrstsaä Boa La essentliehen 1, 0 x r , Blues obe: ug »hvelleugest 4« spamum4 m «100 # ma eia» uatereae "äwell« »xt dem Spsnxvm vm 9S #. With diesoepbeaes be rough angn, you d "sn den lsts rer @ au @ s @ 10 imposed spr100 v u um is, aria duxrb dlre metesbroob @ eere äm @ e 44 is? i (.11 eagsaeutet is, mg ds1 iea wa the mterba @ aroheaen UM = 45 v " 44 Je basr. ise 0 (100 bsv. p) «tspsee heß . if the li traaste «rvorrioht m 24 rea, test Zugand Sieb in their condition offered high resistance or blocked property. det and the temperature lower Let than 38 ° a (100o g), be .. carries the locking resistance .. nd the device 14 more than l @ OM J ^ ' , and the upper Sahrslleavert of the voltage is above the put AC voltage of 100 1. and the device remains in their high resistance or blocking state. if the temperature rising to about 380 0 (1D0 ° F) * to the nimnt Blocking resistance of the device 14 down to 1.Ö ll , and the upper ßohselleawert the Bpasnw @ g sinks to 100 V, so to the value of the guided alternating voltage of 100 V. If this occurs. will. the direction of the gate 14 is essentially eye- hliokUoh ow! their state of low resistance or the Conductivity switched wend supplies the electrical Verbrawobr 13 in the Weoheelstronnsrbrauohoriarein 10. The Device 14 remains conductive and keeps the electrical trisohsn consumer 13 under power until the Torperatur on 350 C (950!) Drops. When this happens, the blocking resistance of the device 14 to 1.05 x-: increased, and the Lower Bohwellenwert the voltage of the VorriohtuW 14 increases to 100 r according to the applied Weohnelspaanun`g of equal value. and consequently the Vorriohtu M 14 switches essentially instantaneously to their state of high resistance etaadee or barrier wall in and interrupts the Bnr n ieani- fubr to des Il erb; approximately 13 in des laetstronkrris 10. Through appropriate welfare of the üalbleitermatarialien sur sohalIWng der gwüoeohten blocking values, the wUasohtea jlnepreoh .. Difference to 2wpersturbediagw @ gen and the desired upper and lower threshold value of the voltage in relation to dis essentially constant applied alternating voltage and bsir, or by a suitable choice the value of the created bills of exchange. The device 14 can do essentially any solution used temperature value has been made functional. The tive thermal resistance works on these wines. Coettstent the semiconductor material of the device 14 in the Eohsel- club with the applied in wesentlioben constant W epannu @ susaasea, around the verbssuoher 13 in the Lsstetrookreis 10 eatap »without the temperature of the device with power to spit - or to interrupt the supply if further the device 14 in its low resistance state or the conductive state of the upper and lower Bo @ twllemwert the voltage never causes a Abwnd11 the Strodurobganges into the load circuit Spreohso4 the temperature of the device. If the flow control device 14 of the test state by means of * inne Haiskfrpera 18 ( ? 1g92 ) instead of by the temperature of the U W6 ebu9 (tg.l) is heated, the device 14 is before mAge - in the case of prevailing .., generally only at low temperatures, high temperatures ratures operated, ao dao they should be heated and cooled down can be and so that the upper and the lower Sohwelle word the spamming of the device in pray to the i® essentials constant inserted wheel separation can be changed quickly can and soxait one achaell acting and emptindliobs current- Tax provision is created from solid state . As expressed above »the Utram control device can The test state according to the invention is also available . from there to the effect L, Druokbedinfuagsn operated and the way in which the current control are operated in such a way from a solid state is in P1 & .12 # 13 and 14 illustrated. Have in that regard the semiconductor materials mentioned have an essentially ne- negative pressure -Wideratande-8oetiicient, ie the resistance takes at sune. uaondeat pressure off. It's annunetuwn, she sat Reduction of the resistance as a result of an increase in the Printing occurs as a result of compaction of the material and furthermore the applied pressure in the material lien chewing girdles generate k @ jn, which have a more orderly or critical favor a stable condition. The device 14 can directly measure the pressure of the environment exposed to the device, so never eat anything else this pressure responds (81g.12) or it can meotmnataeh be put under pressure (81g.13). In the latter pull laeon - for example the power control device of solid state entapreohen the device shown in Fig. 3, and the fiter. days 25 of the device can be from an electric heater 48 in a housing 49 8r be carried n, and it can be a flexible cameras 50 can be seen, wiping the housing 49 and a cover 52 is attached and with a « Piston 51 made of electrically niohtleitenäea material tet did that attacks the glocrode 27 of the device. Dingi always 34 inside the cover 32 above the membrane ne 50 can use bad line 53 to a Steusrdruokgnelle »- be closed so that the device Lt of the meohanisoben "N exposed to the pressure generated in the chamber 54 and their resistance is inversely proportional to the pressure can be changed. The effective wines of Strametewstorriohtung 14 in Aäbängl * eit the pressure. is essentially the same as the wiriu »4 s- wise depending on the temperature or tone of heat according to the description in connection with »U.1 to 11, and a more detailed description should not be ordered. For the purposes of veranaobawliohung, however, be im-a enaasren, you the electricity control provision to the fixed state of a üegebuop- druok (n .12) or the pressure in the chamber 54 (7! 'i .13) Removing is set, and that the device controls its current u mktios in the @ eohseletrornerörauo @ yerhrsis 10 with a «print from oa. 3.5 kWw12 (50 Pst) & should exercise. At a Druoh vm 3.16 kg / om2 ( 45 pst ) in the device 14 a Spesswidea m - stood in a ten-borrowed tone 1.05 X,, an upper Behwellm- worth of uparulun t ; of 105 V and Amen lower threshold the voltage of 100 Y, and at 395 k & / 0 & 2 ( 5u Poi ) k "to you one: 3 block against and in the weauntliolten of 1.0 M. , and an upper voltage Goh value of 100 Y as well have a lower voltage wave value of 95 V. With these given sizes it is assumed that the Weolmelatromnrerbrauoherkreis lt? applied voltage a Weohnelepaanung of 1; 70 Y int, as indicated by the interrupted without line, 4 is illustrated (Fig.14), and that the undermine lines 45 or 46 to print 395 or .3.16 kg / ov2 (50 b $ w.6pei) en . epreohen. When the Stroiaregol device 14 ton solid state their state of high resistance or blocked state and the pressure is less than 3.5 kg / om2 (5U pei) * if the blocking resistance and the device 14 is above l # UM , .s and the upper threshold voltage is above that unoccupied line lapa mation of 100 V, and the device 14 thus remains in their state of high acceptance or "perrzuetund. When the pressure drops to 3.5 kg / om2 (50 pei), the blocking resistance of the device 14 decreases and reaches 1.0 M., And the upper sole size of the shirt sinks to 100 Y corresponding to the applied Weoiiesle tension of gleioheat value. When this occurs, device 14 wM essentially ocular ocular ooclioli on itwen state minor Widerütundee or conductive state umgeactialtet, ao that the electrical consumer 13 in Weohaeletromlaetkreis 10 is placed under itrom. The device 14 remains conductive and maintains the supply of energy to consumer 13, until the pressure drops to 3.16 kg / om2 (45 pei). If this occurs, the SperrAderutand of the device 14 rises 1y05 t1, and the lower threshold value of the voltage of the Device 14 rises t.:uf Y en, epreohend the applied Heehaelapension of the same value, t: nct. as a result switches the device 14 in the weaentliohen instantly on their ,, uatund high Wideratunded or locked state around and power the Verbruuaher 13 in the La ntatromkrein 10 currentless. By suitable choice of the Ilulleitermuterialien for the original targeting of the desired blocking resistance values, the desired Bmpfind- possibility of the device on pressure and deduction trtin aot: th upper and lower Johwelle value of the voltage with regard to the Weohdel- epension and b $ w. or by the choice of the egg tea applied Weohenle voltage, the device 14 can able to function at any desired pressure value woke up. In this way the negative Druok-Widerutanda- Coefficient of the semiconductor material of the device 14 iss association with the Weoh- eelapension an an and.: buchalten des consumer 13 in deal Load circuit 1u according to the acting prints Wülirend also the device 14 calibrated above half of the lower normal values of the voltage in their state low resistance or the ability to work, also acts a hbwandlunk ;; the passage of current through the L xatetromkreie according to the acting on them Pressure. As mentioned above, the 3current control devices von fƒuten., ustund according to the finding also according to the conditions affecting them are operated the, and the manner in which the 3flow control device of solid state works in this way, is in Fig.l5 and lfi illustrated. In this regard, the above are ii,:. l building materials in wouentliolien wL: eserunlönlioh and weeping die Ligeneo.-iaft of a negative 1'euohtigkeite-Wideratundeko- efficient on, and if desired, this .: igeruaoliaft to increase, can in weeientlohen on Psuohtl eit to speaking WiderutundurmterL: .lien additionally or as & rcn: ts be added. Derz,; resistance sensitive to feuulicity at u nüemsteriulien should also in the weuentliohen wueser-Jm- löelioh or only slightly wasuerlöulioh and yorsise a solubility of less than 15 parts per 100 parts cold Wosuer, or, even better, a Lönliohked. t by we: dger slo Raise V parts per 100 parts of cold water. Among such Materials and, for example, lithium compounds, such as Zithium carbonate, Llthiumhydroxyd, Lithiumortöeilikut, Lithium- aulfcit, I.itl-: iuu-e: .cetat, Lithiummetasilil-, at, lithiummetaborat, "itiiiumf? uorid,; .ithiunoxyd, 1, ithiunoriüphosphat and mixtures any two or more of the same that have a large negative i.iven humidity-Wideratande coefficients. Although the physico-chemical mechanism for the negative moisture: ei ta- @: i ( tere tands -characteria ti3: in the to L nnten semi-detectors and additional or : ustrausch- : materials responsible, not fully clarified is, F @ z:; euo @ zaeri, that the iu wenentlieLon wuseerunlös-- common materials at their interfaces and in their vicinity absorb moisture through J! beorptinnevorging e the physical binding of waaer molecules by van-der- daal-eche Kr., ifte alone is limited, as distinguished from cheu @ iuchen ... '. absorption effects, which in significant Measures riotous substances occur. Fe becomes further assumed that the relatively low order of magnitude these binding forces allow the environment to work for the evaporation of the water required heat when reducing to change the moisture content of the environment, c) without affecting the actual environmental conditions will. The lead materials and those contained therein Additional or replacement materials take away from the environment Moisture on bsw. give embarrassment to them and influeaen: dutch the 3trometeueinrichtung in fe®ten supply stood according to the 2 moisture content of the environment and change their electrical resistance @: tnd inversely proportional on the fire content. The effect of the flow control device 14 accordingly the humidity is essentially the same as that temperature- or heat-dependent 5-, e mode of action according to the above echreibunl; im Ziu e awaaenlwng with Fig. 1 to 11, and a detailed lierte beaohreibung. should be superfluous. For the purposes of Yerzneoliauliohung, however, it is assumed that the flow control Provision of solid state of the one shown in Fig.G. corresponds, in which the semiconductor material 26 in the solid state between the sheet electrodes 31 and 32 in the row in the Luatiätrom- kreia 1u switched on and the moisture in the area of the device 14 is used in such a way that this: Zeuehtig- Is sensitive to the touch and responds to the ability to exercise. be furthermore anßenom: ien, the device 1d has its Stromator- functions in the Weoheeletromlaetkreig 10, as in Jig.15 unaohaulioht, if the environment is humid or a relative humidity of the same of approx. 50 "," ,, ' . Hei ®gohalt a moisture of 45 54, the device 14 a bperrwiderstund top of the weaentliohen 1.05 14 _ "a 5 Ohm value of the voltage of 105 Y and a lower 1- value of the tension of loü Y, and at a Peuahtig- kei tet; ehLt from 5U it can be a Uperr-widera Lund sound in essentially 1.0 H, an upper threshold value of the voltage of 10U Y and a lower threshold value of the voltage of 95 Y have. With the given sizes be e n genomaen, ds, ß C ,,,, n the Weohaelstromlaetkreis 10 applied voltage Interchangeability of 100 Y is, ( i: dark brown line 44 in Pig. 16) and that the broken lines 45 and 46 Beuoh- salary of 50 b $ w. from 45 9 @ entepreohen , when the power control device is in a tentative state their state is in high resistance or blocked condition, if the moisture content is less than 50 # 'b, the blocking resistance of the device 14 is more than 190M and the upper value of the voltage lies above the applied alternating tension of 100 Y, and the device 14 remains in its state of high resistance «or 8 blocking su®tand. When the humidity brought the environment to 50 14 increases, the blocking resistance of device 14 decreases 1, o M ,,, and the upper Joh wave value of the voltage drops 100 V, entepareoi »nd the applied Weohseleptuuiuaa before the same good value. when this occurs, the priority is set to 14 in essential immediately to their state of low resistance or high conductivity, hold and set the Verbreuoher 13 In Veoheelstroalaetksyte 10 under St r or. yie 'g orriohtmg 14 remains conductive cri Ullt den ferbrsuobez 13 J; under atsror1U-t @ 1er Pruah Uß » its salary to 45 f si" t. when dioa occurs, the blocking resistance of the device increases 14 to 1.05 r, and the lower threshold value of the voltage of the Device 14 decreases to 100 V according to the applied Exchange of the same value, and in = olgedeeeen schools the device 14 in the vesontlichen instantly on their : @uatund high Wideratandea or Sperrzuutand around and under- breaks the isnergy supply * to consumer 13 in the L uotetroe- Kreie 10. By suitable choice of semiconductor materials for Secession of the desired repudiation and &; values that wished L®pfiniliohke 1t on moisture conditions and the desired upper or lower k'i chwullenertes of the Gpm- Only compared to the essentially unplaced ones weehaelspannuag and bw. or by appropriate choice of values of the occupied voltage voltage, the device 14 can in essential for every balanced fireness value. capable of maritime law. On diene 'wines cause the negative . moisture-widerateaäe- The electrical conductor material of the device 14 in Association with the Weoheel- tension dun turning on and off the waste re 13 in the Haetetronkreie 10, corresponding to the one on the device ririOndea peuc; activity. . _ while the Vorriahtueg 14 eich in their Zurtspd mA @drt . widese or higher medium capacity it lotiadet, 1 »1M never also an i-bi-ha: dlune des @ itro @ nduroi: .. rcr in the LH.atetron! - circles according to the rules, the influx of Peuoh- ti.; I; .c: it. 3 = ie already above: i to l: iiodrae_ ;. Zebrt: cl.t, = .ttric: (lie itrometeuer- device of feotea:.; initundc:., 13 d: ir id'rfi: idii, ig furthermore in accordance with the ai.if a operated, and the JLrt @_Ind @: oiue, in the ilio Strosm- control device from feutom üu3tana the trt 1) t: i, is rubbed , is r) .u: j Fi-.l? and 1 £ j ersiorit, loh. in dse: u, 11.e have the eermrinten:, ialbleiterl - kzterialien nega =;: ive 1,: ic ': t - .: i.deratande- Ioeffiaienten, and those that; fell and corresponds i31e.ieulfid li-.ltenrItet # en beoondern good negative L1e!, t - @ 'i @ ie @ c tande-Koefli- cients and are for (: r the: the purpose, rspecial in that Infrared r-.ri; if: nzenden Pereich de: 3 ... iclitaiiektrwin, beeondera suitable. .: ilhertellurid,) 3leiselenid, K >> cimiur4isulfid, zinc- eelenid and Ksdmiumeeleni # ia ben Ebenfelke high negative Lioht- resistance coefficient, and serve oiri.e gels and lead sulfide can r: uuteiu,; eliweisc or zuuiii.tr- lie '". to the named ten I. semiconductor. ! i <<. terialion uses wreeu, u: # a high one nesrutivert .i.ic @@ t-widertc-nd:; - Xoefficienteii z @ i eraielen. The '=: irkunwoweiuo the i tro: xe: teuervo # advised: .tung 14 in dependence speed of; , ici.t eats essentially the same as the we- kungeweiee in deprivation of Tvmp @@ r @ tur odor warmth loud above overhaul in Zueamenbang with Pii; .l am 11, and an eiu #; ei.ursJ.u _j, # 3bc: .friction should arise. he # ;. rest. even here kaau zu: iwee ':: en der Vei-a, nsrehauliel:; ug die Utroratej4er- vorra.ciitunb 14 of fe $ tum state u13 ülusiicli of the in Yig. 6 üurbiateiltuzi Vi.irrichtung "be cigenvmnen at the daa :: a, lbleite @ # fu: tic, # riul 26 of solid state between the i # lek- Lrodei: 31 and 32 in r =: eü: e: in the iautatrumicroin lt) l; eacl.ultet iat, and the device is the idiolite in the: J c4; exercise the Uuzgeuetzt device 14, so d #i never ß uu% dieuun sensitive read and wnupricht. ii-uc .: here Sei urr; auoza @ .en, d: u> J the prefix ricütun @; l @ - your:,; tvuer function in the i @ c Aiaulutromlugt- kreia lu (21,1,17) Lai a Liehtintenaität of oa, 1.w per cm2 ouuübun should. With a light intensity of 0995 i.erZen yes, the device 14 can perform a blocking stood from in the domestic 1.05 H,. , an upper threshold worth the apciiiriung of 105 V and a lower Saliwullen- value of the voltage of 100 Y, and it can be at 1.00 Ker- zen per 0m2 a blocking resistance of in the weekliohen 190 X _p t , one upper Jaliwe llenvert of the voltage of 100 V and one unt older Gei: wave worth Sparuiung of 95 V feast. With serve gebebanen sizes, it is assumed that the s wechuelu trowlaatkreie 1J created SpaiL_ung a Weeiuael- epunaung of ljJ Y iat ( interrupted anie 44 in. Fig.lB) and dali the broken lines 45 and 46 the values of 1, GU or 0.95 candles per osr2. when the ; i power control device 14 is calibrated from a solid state is in its high resistance or operational state and the Lioctinteneität is less than 1.00 candles; per cm`, the Uporrwideretand of the device is above 1.00 and the lower aohwellon value of the voltage is above the bert of the created Weohaals pa nnung fron 100 Y. The device then remains in its high resistance or blocking state was standing. if the light intensity is over 1900 courses per om2 increases, if you oppose the device 14 to 1.0 M , and the upper envelope value of the voltage decreases atrt 100 Y corresponding to the same value as the applied Woalzo voltage. when diou occurs, preference 14 La wo -.entlioi.en instantly on their state of low resistances or Conducting t = U high ability switched and vomit the consumer 13 in the @ cere @ ekr @ eie 10 with anergy. The Vorr ichtiM 14 remains conductive and keeps consumer 13 energized until the iioht- inteneitüt drops to 0995 r, .erzen per «2. When you enter the sperx resistance of device 14 rises to 1905 m . '. , and the lower threshold value of the voltage on the device 14 increases to 100 corresponding to the Y value of the angel fron 100 Y W; th weoheelspanaung, and as a result the device 14 switches essentially autronblioklioh on their condition wood hours or Sperrzuat-: nd and inks the consumer 13 in the Lasta iromkreio 10 de-energized. By suitable choice of the half leixeriai.-materials for serving beer the unfamiliar Brptindliohitit on the beleuohtunasbe- dinguogenic and the familiar upper BMW. lower threshold the voltage compared to that in the, substantially constant applied vehicle tensioning and construction. or by a suitable choice the value of the applied change can be made by the device 14 essentially at every unaccustomed value of the light intensity ity must be made functional . In this way, the anxious Lfaht-Wäesstends-Koettenzen- of the semiconductor material of the device 14 in conjunction with the in essential constant applied Weohjelapanuung the arrival and Shutdown of the consumer 13 in the Laa tet romkre ia l0 speaking of the pulls acting on the device. The description has dealt with some embodiments the invention. Further embodiments are without deviating Chen of inventive ideas possible.

Claims (1)

h8t1at8 @ iDr @ Qh1 1. Electrical aetstromkreie, characterized in that 8 connected in series there is a source of natural energy from im essential constant voltage for applying an im essential constant voltage on the air circuit, a consumer (an electrical load) and a Solid state current control device operating on a State variable to essentially the moment switching on the consumer if the electricity tax device of solid, state of at least one torher certain high value of a variable state variable is exhausted, which affects the device; that the Current control device of solid state, a semiconductor material from solid® state and electrodes to electrical Connect it in series with the electrical load circuit has; dsß the solid semiconductor material has negative resistance state variables4: efficient, so that its resistance decreases and increases as the the value of the state variable that the Utromsteuereinrichtung influenced by a solid state, increasing or decreasing; that this solid semiconductor material in one state at least parts between then having electrodes that are in a Zvetand located by high resistance and essentially complete insulation capacity and mm Blocking the passage of current through the semiconductor material in the one = or in both directions below one Threshold value of the voltage is used, the increase and decrease des Ilertee of the Stromatƒuorvorrich turg of solid state Influencing to -tando increases or increases; duss that Iüzl b: ei .ona ;: ter izl of firm Zuo t; a: d in an ins eren To: -t,: nd at least great between the electrc) dƒn, who are in a = their state, the calibration by low resistance and essentially complete conduction f .; ! ability auozeicl u net and for; i conducting the passage of current through the semiconductor material in one or both Directions serves; sat the least available: u: those parts of the M3lbleiternateriaie von Festete Zuott, .nn are controlled by the one attached to the elehtriechen hastetromkreis, essentially constant voltage; and if this was at least which parts are essentially instantly removed from their @a '`` Rand in their ZQitfVhigkeitszuntmd Uberft * hrb; r are, when the threshold voltage of the same is at least the essentially Ison t.-: nth value of the applied voltage as a result of the increase in the values of the electricity tax device influencing Zuotande size to at least the before ventilated high, continued to be diminished. 2. Electric li echaeletrom - '.. aetkreie, characterized by - . sat he was connected in series contains: a voltage source of essentially constant alternating voltage for application an essentially constant alternating voltage across the La, stetromkreie; a consumer (an electrical load) and a current control responding to a state variable - fixture of fixed Zue bruui rum essentially ocular Immediate switching on the consumers when the electricity. control device from feoton Zuat <.sid at least one previously determined high fate of a disgusting state (is- that affects them " and to the ins essential moments: lichen 2boch: .lten of the consumers, wejin the electricity supply from fes tera Zuatund minäe- a previously estimated low value of the changed exposed gate size: .jird; dc.ß dis Gtroneteuer- v ,: rriclitung of .. &"e.3-teLi Zuat .nc: a IIalLle.l terma i, erial of feuteo Zuot..nd and Lle: _tr:) the xum @ elen tric <, subsided of the same in series in the electrical data trom @ reie d - ate the I: ulLleitermstaric: l from feuteüi state, nd one r.eg:=:tiven 'r @ üleret @ :. nds-Zustr: .ndsgrvßen-l: has coefficients, ej dL.ß his resistance in the leisure ab- uni in to the 'wart of the citr: -as teuervorricl. tung v) n fesem sem Condition influencer: deii Zuat :: uidsgr @ ße Zu- Lzw. , decreases; d: l.ß dis Iialbleiterm @. teri @ .: lv:; ii solid Zuut .u ;: in one Zuu i, nd at least ropes -diucheri Gen Mek tr) (ien uutweiG t, who are in a: state of affairs , the durel, high 4ider- ._ @ t =: nd us in. weeertllcaer: vol18t tluszeialinet and to block the @ trcmdurchgu.rgea through the I1 lead termnterial In one or both directions gen with the help of an upper threshold value of the voltage serves, which at Zunal Äm e or Abnsxhue the value four die Control device of test influencing state Additional quantity is reduced or increased; dtu3 the ILalb- Conductor material from solid state to another state at least some parts between the electrodes h.-Lt, which are calibrated in are in a different state, which is caused by low resistance. at, z, .nd and essentially complete L sitf @ :. ability nue- getsiclsaet ieit and to guide the ötroues through the Ilalb- 'pus in one or both directions Above all, a lower threshold value for the voltage is used, the level with an increase or decrease in the value of the the; 3troneteuereinrichtung von Feetem Zuet..md influence uziiumt; uziiumt duss the nin- = 'eatens existing parts of the semiconductor material of fixed condition: md. through the essentially contimmte, un the elextrioehen Luststroml: - @ eia applied alternating voltage are controlled and in the western c @ ui; ej.bliel: licli r.:uc their blocking state in their conductivity guide one, if the upper; @ oh #; ellen%; ert the Gpannun , the focus on minc: eatezlu den in the weƒƒ e tunten alert of the created change pannux g at Zur: hme of the values of the the Str: D file control device of fentem Condition influencing condition: aado size tauf at least the previously used high value is reduced, and im j.renent'_i c @ _en aul; er_blic '.: licii --cris their L @ eitf;: higkei te- to. t ne :. L: restore their blocking state i °. hrb-x bind if According to Abnt, thm e of the values of the ß'i tromutevervorrichtune conditions influencing the condition of the feet. deƒtenn Gien previously determined low value of the low Saäwellenwert the voltage of the device to at least the essentially constant value of the applied balance dgemu: #taigt . 4, thereby gQ :: oiuixaicianet that the miai @ oetene v.:rlwndoiio:@: vilv ueu iialbi.ei-teria.:tevials from feutau Zuo t: Luid, if you are: bi your lui ;; 1 '@; lieu state äefiiideu, in # weuƒnti.icheii augeiiülici; iich iiitoriaittierend for Zeitabeehni wto, which in de: a @ -ILüao zueluaoii and decrease, :; Ui siena uer Wort (! Er die: @tro:; @. @ ;, eueiworr @ clauü; ri> n feetem Zua ture, d beeinflueeenleri CAULK bsw. too good, during, each half-period of the essentially :: '.; onatunten iieehmelepension in its locked state: aid .berfshrbar ulnd, if the moment of the @stechselupwiuuilg uich be Mullwert zi.:diort. . .. n; ii - iu, tiin -Lach ._5_n313: uea 1 , je-, 01111,6.i chne t äurch Li.nrich- options for creating the selected: the original value tai the eleü- trinchen Luststromkrein for pre-determining the value der ver:, esierlichen zu: 3-11; -ndo size, in which the at least vorhanc: enen parts the semiconductor-iterial -of solid : '. us t @n (i from your locking device:: di: your Loitf @ aiit; eite-- "u ^ tand be transferred. @. _: at, iu: ## # .iou according to claim 2 or j, ge: .oränzcj @ .ciaiet #: urcir Einrichiun £; eri zum : cilegen gevr: a_lter change voltage values La den oIelytrieeheii L. @ asta'ur # - # @ ml: reia zum Vorlierveati = en dost values of the changeable where the uindeatene 'existing parts of the Iialbloitormateriale of rented state between their lock Lustaiai uni their leading f;: hig.eituzustLUid be transferred. 6. honoring according to one of the claims 1 to S, thereby marked $ eicllnet, that the at least existing parts the semiconductor anterin, la from firm to: 3t @ uzd in their lock $ u; stood in a random, general = orpher: Zuut @iui are and that they are calibrated in their conductivity state in a tempo- r: they are in a more ordered or hrietuliine state. 7. Combination according to one of the # - nspr ;; che 1 to 6, thus identified ze.lclutot :, Duss a 1lulbleitozzauterial the solid state Base material contains sulfur, selenium or tellurium. ß. l: onbin-ttion after one of the tmpr :: before 1 to 6, thereby being: ann- records, dzw HalbLieiteraaterial of solid Zuratend dall one Has base material made of tellurium. 9. :: or @ bzna @i: n zach one of the `ar a pr cl.e 1 to 6, go through this z.:- shows that the power control devices are fixed State influencing influx W'd = e iut and dsß das IIalbleiterm..toriul vun festew Zuetauü a negative thermal has a near drag coefficient. 10. Lonbination according to one of Proverbs 1 to ƒ, thereby identified draws that the current control device of solid State variable influencing the temperature of the Environment 1®t, which is directed to the device , and that the semiconductor material of solid additive t a nu eizml negative thermal resistance has resistance coefficients. 11. :: ombin: tion after one of the @ maprüche 1 bin £ 3, thereby gel: enazeichaet that the itron control device of feeteu Zua tmul beeir f luaoe nd e uatwids size '4 rme is, that the IIQlbleitarwateril .l v-Jii fers tera zuatzuid a z: cg, @ ti, ren therrAschen Iiiderutz: nctekooffizleziten has and that (! er meter control device vt? jjteutera .uutand a vleirtrIocher radiator zugeorcuie iot, which is used for heating dereelLen to over the vc .., rlier beutiicutc liolie temperature serves when he is fed with energy, and that Cooling the device ermijgliclit, worni he dtromloe let, and dfsƒ a e "z.et: trigetier ätei.xerutr ^ rj'- rc: iu for the eleI triechen IIe. @ ür: lirper zura: ai- and .`_boehalteu the same is provided. 12. Combination after one of the , "mpr;; ohe 1 am t3, thereby marked that the the Stron: @teuervorrlchturg v ..;: i £ esterj condition affect # 3e accessory size look int, and that the solid state semiconductor material is a has negative pressure re-retando coefficients. 13. Combination according to one of the Amprtiche 1 bin I3, thereby indicated that dle affect the power control device. flowing Zuetanda-size moisture is and that the half- solid state conductor material has a negative potential for has the keite-wideretandn coefficient. 14.; @, oizbirazi4-ri ii ".cti one of the Ancipr '@@ che 1 bi :: £ 3, thereby gel: ennzetc-hnet, d # @ ß die the strovoteuervorrichturi; of fixed?, iißi:.: nd beainflueserda . _ icht ist ti: Lti ü: ü ::::; Semiconductor interivl from solid ? uet - nci a negative light wic: # erattsudd-koeffin ionten Has.