DE1444522C3 - Process for increasing the carrier life in semiconductor bodies - Google Patents
Process for increasing the carrier life in semiconductor bodiesInfo
- Publication number
- DE1444522C3 DE1444522C3 DE19621444522 DE1444522A DE1444522C3 DE 1444522 C3 DE1444522 C3 DE 1444522C3 DE 19621444522 DE19621444522 DE 19621444522 DE 1444522 A DE1444522 A DE 1444522A DE 1444522 C3 DE1444522 C3 DE 1444522C3
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- increasing
- semiconductor
- carrier life
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 6
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- WUUHFRRPHJEEKV-UHFFFAOYSA-N tripotassium borate Chemical compound [K+].[K+].[K+].[O-]B([O-])[O-] WUUHFRRPHJEEKV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004254 Ammonium phosphate Substances 0.000 claims description 2
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 2
- 235000019289 ammonium phosphates Nutrition 0.000 claims description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Description
Die vorliegende Erfindung bezieht sich auf ein Verfahren zum Erhöhen der Trägerlebeiijdauer in einem Halbleiterkörper durch Inkontaktbringen des Halbleiterkörpers mit einem Nickelchlorid enthaltenden Gemisch und nachfolgendes Erhitzen des Halbleiterkörpers. The present invention relates to a method for increasing the carrier life in a semiconductor body by bringing the semiconductor body into contact with a nickel chloride containing Mixing and subsequent heating of the semiconductor body.
Ein solches Verfahren ist z. B. in der USA.-Patentschrift 2 827 436 beschrieben worden. Gemäß diesem Verfahren wird ein Halbleiterkörper durch ein chemisches Abscheideverfahren mit einer Nickelschicht vergehen. Dies geschieht in cine-- Vc-nickelungsbad, das Nickelchlorid, Hypophosphit, Ammoniumzitrat 'und Ammoniumchlorid enthält. Aus diesem Bad wird reines, metallisches Nickel auf der Oberfläche des Halbleiterkörpers abgeschieden. Die vernickelten Halbleiterkörper werden dann einer hohen Temperatur ausgesetzt, wodurch die Nickelatome in den Halbleiterkörper eindiffundieren.Such a method is e.g. In U.S. Patent 2,827,436. According to In this process, a semiconductor body is formed using a chemical deposition process with a nickel layer pass away. This is done in a cine-Vc nickel plating bath, which contains nickel chloride, hypophosphite, ammonium citrate and ammonium chloride. This bath becomes pure, metallic nickel deposited on the surface of the semiconductor body. The nickel-plated semiconductor bodies then become one exposed to high temperature, as a result of which the nickel atoms diffuse into the semiconductor body.
Dieses Verfahren is"t jedoch relativ aufwendig und kann nur als zusätzlicher Schritt zum Eindiffundieren von Dotierstoffen durchgeführt werden.However, this process is relatively complex and can only be used as an additional step for diffusion be carried out by dopants.
Die der Erfindung zugrundeliegende Aufgabe besteht darin, ein einfacheres Verfahren zum Erhöhen der Trägerlebensdauer in einem Halbleiterkörper anzugeben.The object of the invention is to find a simpler method for increasing indicate the carrier life in a semiconductor body.
Dies wird dadurch erreicht, daß das Gemisch neben dem Nickelchlorid eine chemische Verbindung eines Dotierstoffes enthält und als Flüssigkeit oder Paste verwendet wird. ■: .,.-··'This is achieved in that the mixture contains a chemical compound in addition to the nickel chloride contains a dopant and is used as a liquid or paste. ■:., .- ·· '
. Als Dotierungsstoff kann Kaliumborat bzw. Ammoniumphosphat verwendet werden, je nachdem, ob eine stark p- oder eine stark η-leitende Zone erzeugt werden soll.. Potassium borate or Ammonium phosphate can be used, depending on whether a strongly p- or a strongly η-conductive zone is generated shall be.
Ein solches Verfahren hat den Vorteil, daß zwei Vorgänge, nämlich das Dotieren und das Gettern von Verunreinigungen in einem einzigen Verfahrensschritt durchgeführt werden kann.Such a method has the advantage that two processes, namely the doping and the gettering of Impurities can be carried out in a single process step.
Die Erfindung wird an Hand eines Ausführungsbeispiels in Verbindung mit den Fig. 1 bis 3 erläutert. The invention is explained using an exemplary embodiment in conjunction with FIGS. 1 to 3.
Fig. 1 zeigt den. Halbleiterkörper, von welchem bei dem Verfahren z. B. ausgegangen wird. Dieser Halbleiterkörper 1 möge z. B. aus schwach n-Ieitendem Silizium mit einem spezifischen Widerstand von 20 Ohm cm bestehen. Dieser Halbleiterkörper wird in eine Ampulle gebracht, in welcher sich gleichzeitig eine Quelle zur Verdampfung von Aluminium befindet. In dieser Ampulle wird ein Eindiffusionsprozeß von Aluminium im Vakuum in den n-leitenden Halbleiterkörper, durchgeführt, so daß in dem Ausgangskörper nach Fig. 1 nunmehr gemäß Fig. 2 eine schwach p-leitende Mantelzone 2 entstanden ist und von dem früheren Ausgangskörper nur nochFig. 1 shows the. Semiconductor body of which in the process z. B. is assumed. This semiconductor body 1 may, for. B. from weakly n-conductive Silicon with a resistivity of 20 ohm cm are made. This semiconductor body is placed in an ampoule, in which there is also a source for the evaporation of aluminum is located. In this ampoule, aluminum is diffused in a vacuum into the n-conducting Semiconductor body, carried out so that in the starting body according to FIG. 1 now according to FIG a weak p-conductive cladding zone 2 has arisen and only from the previous starting body
ίο eine Kernzone 1 α mit schwacher η-Leitfähigkeit vorhanden ist. Es kann sich nunmehr empfehlen, die Oberfläche des Halbleiterkörpers einem schwachen Aufrauhungsprozeß durch Läppen zu unterwerfen. Anschließend wird die Oberfläche des Halbleiterkörpers zweckmäßig z. B. mit einer Flüssigkeit 4Sprozentiger Flußsäure gereinigt.ίο a core zone 1 α with weak η conductivity is present. It can now be advisable to subject the surface of the semiconductor body to a weak roughening process by lapping. Then the surface of the semiconductor body is expediently z. B. cleaned with a liquid 4S percent hydrofluoric acid.
Nunmehr wird auf die durch Aufrauhung für die Benetzung vorbereitete Oberfläche des Körpers nach Fig. 2 eine Paste aus einer chemischen Verbindung eines Dotierstoffes, z. B. aus Kaliumborat, aufgestrichen, welches einen Zusatz von Nickelchlorid enthält. Den nunmehr entstandenen Halbleiterkörper mit dem Überzug aus der Pastensubstanz 7.eigt^ die Fig. 3. Dieser Halbleiterkörper wird nunmehr in eine pulverförmige Masse, z. B. aus Quarz, eingebettet, die somit vorzugsweise gegenüber dem eingebetteten Halbleiterkörper inerten Charakter hat. Alsdann wird die Halbleiteranordnung an Luft einer Temperatur bei etwa 1250° C während einer Zeitdauer von etwa 16 Stunden unterworfen. Während dieser Temperaturbehandlung diffundiert aus der chemischen Verbindung Kaüurnborat das Bor in den Halbleiterkörper ein und erzeugt in diesem in der schwach p-Ieitenden Mantelzone 2 eine stark dotierte Zone p+ mit der Bezeichnung 3. Während dieses Eindiffusionsprozesses ist aber gleichzeitig die chemische Verbindung Nickelchlorid wirksam, indem sie eine Getterung von in dem Halbleiterkörper enthaltenden Verunreinigungen, die unerwünschte Störstellen bilden könnten, herbeiführt, d. h. diese Verunreinigungen werden an die Halbleiteroberfläche geführt und dort durch die Nickelchloridverbindung gebunden. Es wird also gleichzeitig mit dem Eindiffusionsprozeß auch ein Reinigungsprozeß der Halbleiteranordnung durchgeführt. A paste of a chemical compound of a dopant, e.g. B. from potassium borate, which contains an addition of nickel chloride. The now resulting semiconductor body with the coating of the paste substance 7 .tends ^ the Fig. 3. This semiconductor body is now in a powdery mass, z. B. made of quartz, which is thus preferably inert to the embedded semiconductor body. The semiconductor device is then subjected to a temperature of about 1250 ° C. in air for a period of about 16 hours. During this temperature treatment, boron diffuses from the chemical compound chew borate into the semiconductor body and creates a heavily doped zone p + with the designation 3 in the weakly p-conductive cladding zone 2. by bringing about a gettering of impurities contained in the semiconductor body which could form undesired impurities, ie these impurities are carried to the semiconductor surface and are bound there by the nickel chloride compound. A cleaning process for the semiconductor arrangement is therefore also carried out at the same time as the diffusion process.
Bei diesem Eindiffusionsprozeß des Bors wird auch die Diffusionsfront des bei der Durchführung des Verfahrens zur Erreichung des Halbleiterkörperaufbaues nach Fig. 2 eingebrachten diffundierten Aluminiums in Richtung auf die η-leitende Kernzone etwas weiter vorgeschoben. Das ist jedoch, wie die Erfahrung gezeigt hat, nur ein anteilig sehr geringer Betrag, der für den Aufbau der späteren Halbleiteranordnung nicht nachteilig ist.During this diffusion process of the boron, the diffusion front of the when the Method for achieving the semiconductor body structure according to FIG. 2 introduced diffused Aluminum is advanced a little further in the direction of the η-conductive core zone. However, that's how that Experience has shown that only a proportionately very small amount is required for the construction of the later semiconductor device is not disadvantageous.
55, Von· der Oberfläche des durch diese Temperaturbehandlung entstandenen Halbleiterkörpers wird nunmehr die verbliebene gläshaltige Restsubstanz abgeläppt und anschließend die Oberfläche gereinigt, geätzt und der weiteren Fertigung (Halbleiterstromtor, Diode) zugeführt.55, from · the surface of the by this temperature treatment The resulting semiconductor body is now lapped off the remaining glass-containing residual substance and then the surface cleaned, etched and further production (semiconductor current gate, Diode) supplied.
Die Anwendung der Erfindung ist insbesondere gedacht bei Halbleiteranordnungen auf der Basis eines Halbleiterkörper aus oder nach Art von Germanium oder Silizium oder einer intermetallischen Verbindung.The application of the invention is intended in particular in the case of semiconductor arrangements based on a semiconductor body made of or in the manner of germanium or silicon or an intermetallic Connection.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0077844 | 1962-02-02 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1444522A1 DE1444522A1 (en) | 1968-10-17 |
| DE1444522B2 DE1444522B2 (en) | 1973-07-12 |
| DE1444522C3 true DE1444522C3 (en) | 1974-02-14 |
Family
ID=7507063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19621444522 Expired DE1444522C3 (en) | 1962-02-02 | 1962-02-02 | Process for increasing the carrier life in semiconductor bodies |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1444522C3 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4277303A (en) * | 1978-08-07 | 1981-07-07 | The Harshaw Chemical Company | Getter for melt-grown scintillator ingot and method for growing the ingot |
| EP0957524B1 (en) * | 1998-05-15 | 2003-03-19 | Matrix Solar Technologies Inc. | Phosphorus doping a semiconductor particle |
-
1962
- 1962-02-02 DE DE19621444522 patent/DE1444522C3/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1444522A1 (en) | 1968-10-17 |
| DE1444522B2 (en) | 1973-07-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |