DE1287697C2 - - Google Patents

Info

Publication number
DE1287697C2
DE1287697C2 DE1964T0026597 DET0026597A DE1287697C2 DE 1287697 C2 DE1287697 C2 DE 1287697C2 DE 1964T0026597 DE1964T0026597 DE 1964T0026597 DE T0026597 A DET0026597 A DE T0026597A DE 1287697 C2 DE1287697 C2 DE 1287697C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1964T0026597
Other languages
German (de)
Other versions
DE1287697B (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DE1964T0026597 priority Critical patent/DE1287697C2/de
Publication of DE1287697B publication Critical patent/DE1287697B/de
Application granted granted Critical
Publication of DE1287697C2 publication Critical patent/DE1287697C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
DE1964T0026597 1964-07-16 1964-07-16 Expired DE1287697C2 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1964T0026597 DE1287697C2 (enExample) 1964-07-16 1964-07-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964T0026597 DE1287697C2 (enExample) 1964-07-16 1964-07-16

Publications (2)

Publication Number Publication Date
DE1287697B DE1287697B (enExample) 1969-01-23
DE1287697C2 true DE1287697C2 (enExample) 1969-09-11

Family

ID=7552893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1964T0026597 Expired DE1287697C2 (enExample) 1964-07-16 1964-07-16

Country Status (1)

Country Link
DE (1) DE1287697C2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2081248A1 (en) * 1970-03-23 1971-12-03 Sescosem Silicon intergrated circuits - with high parasitic mist threshold voltage by localized diffusion

Also Published As

Publication number Publication date
DE1287697B (enExample) 1969-01-23

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Legal Events

Date Code Title Description
E771 Valid patent as to the heymanns-index 1977, willingness to grant licences
EHJ Ceased/non-payment of the annual fee