DE1287697C2 - - Google Patents
Info
- Publication number
- DE1287697C2 DE1287697C2 DE1964T0026597 DET0026597A DE1287697C2 DE 1287697 C2 DE1287697 C2 DE 1287697C2 DE 1964T0026597 DE1964T0026597 DE 1964T0026597 DE T0026597 A DET0026597 A DE T0026597A DE 1287697 C2 DE1287697 C2 DE 1287697C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1964T0026597 DE1287697C2 (enrdf_load_stackoverflow) | 1964-07-16 | 1964-07-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1964T0026597 DE1287697C2 (enrdf_load_stackoverflow) | 1964-07-16 | 1964-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE1287697B DE1287697B (enrdf_load_stackoverflow) | 1969-01-23 |
DE1287697C2 true DE1287697C2 (enrdf_load_stackoverflow) | 1969-09-11 |
Family
ID=7552893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1964T0026597 Expired DE1287697C2 (enrdf_load_stackoverflow) | 1964-07-16 | 1964-07-16 |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE1287697C2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2081248A1 (en) * | 1970-03-23 | 1971-12-03 | Sescosem | Silicon intergrated circuits - with high parasitic mist threshold voltage by localized diffusion |
-
1964
- 1964-07-16 DE DE1964T0026597 patent/DE1287697C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1287697B (enrdf_load_stackoverflow) | 1969-01-23 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
E771 | Valid patent as to the heymanns-index 1977, willingness to grant licences | ||
EHJ | Ceased/non-payment of the annual fee |