DE1287405B - Etchant for semiconductor bodies made of silicon - Google Patents
Etchant for semiconductor bodies made of siliconInfo
- Publication number
- DE1287405B DE1287405B DE1963L0046145 DEL0046145A DE1287405B DE 1287405 B DE1287405 B DE 1287405B DE 1963L0046145 DE1963L0046145 DE 1963L0046145 DE L0046145 A DEL0046145 A DE L0046145A DE 1287405 B DE1287405 B DE 1287405B
- Authority
- DE
- Germany
- Prior art keywords
- volume
- parts
- acid
- silicon
- hydrofluoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 21
- 239000010703 silicon Substances 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 229960000583 acetic acid Drugs 0.000 claims description 6
- 239000012362 glacial acetic acid Substances 0.000 claims description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims 4
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 2
- 230000005484 gravity Effects 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 claims 1
- 230000002146 bilateral effect Effects 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 230000000979 retarding effect Effects 0.000 claims 1
- 230000000391 smoking effect Effects 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
Die Erfindung betrifft ein Ätzmittel aus einer sauren, Flußsäure enthaltenden polierenden Lösung für geläppte Halbleiterkörper aus Silizium.The invention relates to an etchant made from an acidic hydrofluoric acid polishing solution for lapped silicon semiconductor bodies.
Bei der bekannten Herstellung von Halbleiteranordnungen werden die scheibenförmigen Siliziumkörper nach der formgebenden, meist mechanischen Bearbeitung geätzt. Durch die Abtragung von Silizium von der Oberfläche der Siliziumscheibe sollen kristallographische Störungen in der Siliziumoberflächenschicht beseitigt und eine Reinigung der Oberfläche erzielt werden.In the known production of semiconductor devices, the disk-shaped silicon body after the shaping, mostly mechanical processing etched. By removing silicon from the surface of the silicon wafer are intended to eliminate crystallographic disturbances in the silicon surface layer and cleaning of the surface can be achieved.
Die geätzten, danach gewaschenen und getrockneten Siliziumscheiben werden durch Legierungsoder/und Diffusionsverfahren mit Zonen oder Schichten verschiedenen Leitfähigkeitstyps und mit Elektrodenanschlüssen versehen. Um bei einer anschließenden Ätzung eine Abtragung des Elektrodenmaterials zu vermeiden, werden die üblichen Ätzmittel mit einem Zusatz von Orthophosphorsäure versehen.The etched, then washed and dried silicon wafers become different by alloying or / and diffusion processes with zones or layers Conductivity type and provided with electrode connections. In order to receive a subsequent Etching to avoid erosion of the electrode material will be the usual Etching agent provided with an addition of orthophosphoric acid.
Die bekannten zum Ätzen verwendeten Mischungen von Salpetersäure, Flußsäure und gegebenenfalls Eisessig sind saure Ätzlösungen, die zwar eine spiegelnde Oberfläche ergeben, aber die Siliziumscheibe an dem Rand stärker als in der Mitte abtragen. Die mit solchen Ätzlösungen behandelten Siliziumscheiben weisen daher einen nicht ebenen, nämlich kissenförmigen Querschnitt senkrecht zur Scheibenfläche auf. Die fehlende Ebenheit der Scheibenfläche ist für die Maßhaltigkeit der aus ihnen herzustellenden HalbIeiteranordnungen von erheblichem Nachteil.The well-known mixtures of nitric acid used for etching, Hydrofluoric acid and optionally glacial acetic acid are acidic etching solutions, although they are reflective Surface, but the silicon wafer is stronger at the edge than in the middle ablate. The silicon wafers treated with such etching solutions therefore have a non-planar, namely pillow-shaped cross-section perpendicular to the disc surface on. The lack of evenness of the pane surface is important for the dimensional accuracy of the Semiconductor arrangements to be produced for them are of considerable disadvantage.
Die bekannte Ätzung von Siliziumscheiben mittels heißer Kalilauge ergibt zwar eine ebene, jedoch wegen des in den verschiedenen Kristallebenen verschieden starken Angriffs rauhe Oberflächen, die bei den anschließenden Legierungs- bzw. Diffusionsprozessen zu unregelmäßigen oder unzureichend kontrollierbaren Grenzen der hierdurch beeinflußten Zonen führen. Auch lassen sich alkalische Lösungen äußerst schwer von Siliziumscheiben abspülen.The well-known etching of silicon wafers using hot potassium hydroxide solution results in a plane, but different because of the different crystal planes strong attack rough surfaces, which in the subsequent alloy or Diffusion processes to irregular or insufficiently controllable boundaries of the affected zones. Also, alkaline solutions can be extremely difficult to rinse off silicon wafers.
Der Erfindung liegt die Aufgabe zugrunde, ein Ätzmittel zur gleichmäßigen Abtragung von Halb-Leiterkörpern aus Silizium anzugeben, bei dem die angeführten Nachteile nicht mehr auftreten.The invention is based on the object of an etchant for uniform To indicate removal of semi-conductor bodies made of silicon, in which the specified Disadvantages no longer occur.
Diese Aufgabe wird gemäß der Erfindung dadurch gelöst, daß die Lösung einen Zusatz von Chlorwasserstoff (spezifisches Gewicht 1,19 g/cms) auf 2 Volumteile Flußsäure (40 Gewichtsprozent) enthält.This object is achieved according to the invention in that the solution an addition of hydrogen chloride (specific weight 1.19 g / cms) to 2 parts by volume Contains hydrofluoric acid (40 percent by weight).
Polierende Ätzlösungen sind Ätzmittel, die bei ihrer Anwendung zur Behandlung von geläppten Scheiben spiegelnde Oberflächen hervorbringen. Solche zum Polieren von Siliziumscheiben geeignete Ätzlösungen enthalten einen oxydierenden und einen reduzierenden Bestandteil sowie den Ätzangriff be-Polishing etching solutions are etchants that are used in their application Treatment of lapped panes produces reflective surfaces. Such for Etching solutions suitable for polishing silicon wafers contain an oxidizing agent and a reducing component as well as the etching attack
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1963L0046145 DE1287405B (en) | 1963-10-24 | 1963-10-24 | Etchant for semiconductor bodies made of silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1963L0046145 DE1287405B (en) | 1963-10-24 | 1963-10-24 | Etchant for semiconductor bodies made of silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1287405B true DE1287405B (en) | 1969-01-16 |
Family
ID=7271465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1963L0046145 Withdrawn DE1287405B (en) | 1963-10-24 | 1963-10-24 | Etchant for semiconductor bodies made of silicon |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE1287405B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014013591A1 (en) | 2014-09-13 | 2016-03-17 | Jörg Acker | Process for the preparation of silicon surfaces with low reflectivity |
DE102022122705A1 (en) | 2022-09-07 | 2024-03-07 | Technische Universität Bergakademie Freiberg, Körperschaft des öffentlichen Rechts | Process for creating textures, structures or polishes on the surface of silicon |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1040135B (en) * | 1956-10-27 | 1958-10-02 | Siemens Ag | Process for the production of semiconductor arrangements from silicon or the like by using a chemical etching process at the point of the p-n transition |
DE1196933B (en) * | 1961-03-30 | 1965-07-15 | Telefunken Patent | Process for etching silicon semiconductor bodies |
-
1963
- 1963-10-24 DE DE1963L0046145 patent/DE1287405B/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1040135B (en) * | 1956-10-27 | 1958-10-02 | Siemens Ag | Process for the production of semiconductor arrangements from silicon or the like by using a chemical etching process at the point of the p-n transition |
DE1196933B (en) * | 1961-03-30 | 1965-07-15 | Telefunken Patent | Process for etching silicon semiconductor bodies |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014013591A1 (en) | 2014-09-13 | 2016-03-17 | Jörg Acker | Process for the preparation of silicon surfaces with low reflectivity |
DE102022122705A1 (en) | 2022-09-07 | 2024-03-07 | Technische Universität Bergakademie Freiberg, Körperschaft des öffentlichen Rechts | Process for creating textures, structures or polishes on the surface of silicon |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
E771 | Valid patent as to the heymanns-index 1977, willingness to grant licences | ||
EHJ | Ceased/non-payment of the annual fee |