DE1268600B - Method for epitaxially depositing a single-crystal, in particular doped, semiconductor layer - Google Patents
Method for epitaxially depositing a single-crystal, in particular doped, semiconductor layerInfo
- Publication number
- DE1268600B DE1268600B DE19641268600 DE1268600A DE1268600B DE 1268600 B DE1268600 B DE 1268600B DE 19641268600 DE19641268600 DE 19641268600 DE 1268600 A DE1268600 A DE 1268600A DE 1268600 B DE1268600 B DE 1268600B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- carrier body
- reaction gas
- dopant
- supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
Verfahren zum epitaktischen Abscheiden einer einkristallinen, insbesondere dotierten Halbleiterschicht Zum Herstellen von Halbleiterbauelementen wird häufig das als Epitaxie bekannte Verfahren angewendet. Dieses besteht darin, daß man scheibenförmige Halbleiterkristalle, insbesondere Einkristalle auf eine hohe, jedoch unterhalb des Schmelzpunktes des Halbleiters liegende Temperatur aufheizt und gleichzeitig über die Scheiben ein Reaktionsgas hinwegleitet, aus welchem bei der Temperatur der Scheiben der betreffende Halbleiter auf den Scheiben in einkristallinem Zustand abgeschieden wird. Die Beheizung der als Träger dienenden Halbleiterkristallscheiben erfolgt vornehmlich auf elektrischem Weg, indem diese Scheiben während des Abscheidevorganges mit einem aus leitendem, hitzebeständigem Material bestehenden Support, der während des Betriebes von einem ihn durchfließenden elektrischen Strom beheizt wird, in Berührung gehalten werden.Method for the epitaxial deposition of a monocrystalline, in particular doped semiconductor layer For the production of semiconductor components is often used the process known as epitaxy. This consists in the fact that one is disc-shaped Semiconductor crystals, in particular single crystals, to a high but below the Melting point of the semiconductor lying temperature heats up and at the same time over the panes conducts a reaction gas from which at the temperature of the panes the semiconductor in question is deposited on the wafers in a monocrystalline state will. The semiconductor crystal wafers serving as carriers are heated mainly by electrical means by removing these discs during the deposition process with a support made of conductive, heat-resistant material, which during of the company is heated by an electric current flowing through it, in Touch to be held.
Als Reaktionsgas verwendet man im Interesse der Reinheit des zu erhaltenden Produktes nur solche Verbindungen des Halbleiters, in denen dieser an ein Element der Halogengruppe und/oder an Wasserstoff gebunden ist. Weitere, insbesondere metallische Bestandteile soll die zu verwendende Halbleiterverbindung nicht enthalten. Dasselbe gilt für eine dem Reaktionsgas in vielen Fällen beizumischende Verbindung eines Dotierungsstoffes. Die Verwendung reiner Wasserstoffverbindungen, z. B. von SH4, führt zwar zu einer besonders hohen Reinheit des abgeschiedenen Halbleiters; die hohe Zersetzlichkeit dieser Verbindungen, die leicht zu Explosionen führen kann, verlangt große Vorsicht in der Handhabung.The reaction gas used is in the interest of the purity of the product to be obtained Product only those connections of the semiconductor in which this is connected to an element the halogen group and / or is bonded to hydrogen. Others, especially metallic The semiconductor compound to be used should not contain any components. The same thing applies to a compound to be admixed with the reaction gas in many cases Dopant. The use of pure hydrogen compounds, e.g. B. from SH4, Although this leads to a particularly high degree of purity of the deposited semiconductor; the high decomposition of these compounds, which can easily lead to explosions, requires great care in handling.
Dieser Nachteil entfällt, wenn man halogenhaltige Verbindungen des Halbleiters und des Dotierungsstoffes als Ausgangsverbindungen verwendet. Im allgemeinen führt die Verwendung solcher Halbleiterverbindungen auch zu einer besseren Kristallgüte als die Verwendung von reinen Wasserstoffverbindungen, weil die Reversibilität der Umsetzungen der Halogenverbindungen zur Verhinderung ungleichmäßigen Wachstums der entstehenden Schichten ausgenutzt werden kann, was bei den nur noch Wasserstoff enthaltenden Halbleiterverbindungen nicht möglich ist. Andererseits sind Halbleiterhalogenide gegen Einwirkung von Luft, Feuchtigkeit usw. empfindlich. Infolge dieser Eigenschaften können auf Grund Alterungserscheinungen leicht Verunreinigungen in das erhaltene Halbleitermaterial eingeschleppt werden, welche unter anderem auch das angestrebte einkristalline Wachstum der abzuscheidenden Halbleiterschichten empfindlich stören können. Es empfiehlt sich deshalb, möglichst frisches Halbleiterhalogenid für die Epitaxie zu verwenden. Diese Nachteile können bei einem Verfahren zum epitaktischen Abscheiden einer einkristallinen, insbesondere dotierten Halbleiterschicht auf einen als Substrat dienenden Trägerkörper aus dem gleichen Halbleitermaterial vermieden werden, wobei das Reaktionsgas eine Verbindung des Halbleiters und gegebenenfalls auch des Dotierungsstoffes mit Halogen und höchstens noch mit Wasserstoff sowie Wasserstoff oder ein inertes Gas enthält, wobei gleichzeitig mit der epitaktischen Abscheidung eine laufende Erzeugung der Halbleiter- und gegebenenfalls der Dotierstoffverbindung vorgenommen wird, indem gasförmiges Halogen und/oder gasförmiger Halogenwasserstoff über einen erhitzten Vorrat des Halbleiterstoffes und gegebenenfalls des Dotierstoffes geleitet wird, wobei das Reaktionsgas über den Trägerkörper geführt und dabei die Temperatur des Trägerkörpers auf die Temperatur des Halbleitervorrates derart abgestimmt wird, daß Halbleiter- und gegebenenfalls Dotierungsmaterial des Vorrats auf den Weg über gasförmige Halogenverbindungen auf dem Trägerkörper einkristallin niedergeschlagen werden und als Störkeime wirksame Bestandteile des Reaktionsgases können ausgeschaltet werden, wenn erfindungsgemäß das Reaktionsgas durch eine poröse Wand dem zu beschichtenden Trägerkörper zugeführt wird.This disadvantage does not apply if you use halogen-containing compounds of the Semiconductor and the dopant used as starting compounds. In general the use of such semiconductor compounds also leads to better crystal quality than the use of pure hydrogen compounds because the reversibility of the Reactions of the halogen compounds to prevent uneven growth of the resulting layers can be exploited, which is only possible with hydrogen containing semiconductor compounds is not possible. On the other hand, there are semiconductor halides sensitive to the effects of air, moisture, etc. As a result of these properties Due to signs of aging, impurities can easily get into the received Semiconductor material are introduced, which among other things is also the desired Disrupt single-crystal growth of the semiconductor layers to be deposited sensitively can. It is therefore advisable to use the freshest possible semiconductor halide for the To use epitaxy. These disadvantages can be found in a method for epitaxial Deposition of a monocrystalline, in particular doped, semiconductor layer on a Avoided serving as a substrate carrier body made of the same semiconductor material be, the reaction gas being a compound of the semiconductor and optionally also of the dopant with halogen and at most with hydrogen as well Contains hydrogen or an inert gas, being simultaneously with the epitaxial Deposition is a continuous generation of the semiconductor and possibly the dopant compound is made by adding gaseous halogen and / or gaseous hydrogen halide Via a heated supply of the semiconductor material and optionally the dopant is passed, the reaction gas being passed over the carrier body and thereby the Temperature of the carrier body matched to the temperature of the semiconductor supply in such a way is that semiconductor and optionally doping material of the supply on the Precipitated in monocrystalline form via gaseous halogen compounds on the carrier body and components of the reaction gas that act as interfering germs can be switched off if, according to the invention, the reaction gas is to be coated through a porous wall Carrier body is supplied.
Dieses Verfahren führt zu störungsfreien Einkristallen.This process leads to undisturbed single crystals.
In der Zeichnung ist eine zur Ausübung des erfindungsgemäßen Verfahrens besonders geeignete Apparatur dargestellt. Sie besteht aus einem vertikalen Quarzrohr 1, das durch eine horizontale, poröse Zwischenwand 2, in zwei Abschnitte 3 und 8 unterteilt ist. Im unteren Abschnitt 3 befindet sich ein Vorrat 4 aus dotiertem, z. B. pulverförmigem Silicium, das durch eine Heizwicklung 5 oder eine andere Heizvorrichtung auf etwa 1300° C erhitzt und von an der Stelle 6 eintretendem Halogen oder Halogenwasserstoff (z. B. CHI, C12, Br2) durchströmt und dabei allmählich aufgelöst wird. Dabei findet z. B. Entstehung von SiHC13 oder SiC14 statt. Die Abgase dieser Reaktion werden an der Stelle 7, mit Wasserstoff vermischt und gelangen über die poröse Wand 2 von unten her in den Abschnitt 8 des Reaktionsgefäßes 1. In diesem befindet sich ein aus leitendem, hitzebeständigem Material, z. B. auch aus Silicium bestehender Support 9, auf dem sich die zu beschichtende Halbleiterscheibe 10 aus Silicium, befindet. Die Abgase verlassen bei 11 das Reaktionsgefäß. Eine Beheizung 12, z. B. eine Hochfrequenzspule, sorgt für die Erhitzung des Trägers und damit der Halbleiterscheibe 10. Sie wird beispielsweise auf 1150° C erhitzt.The drawing shows an apparatus which is particularly suitable for carrying out the method according to the invention. It consists of a vertical quartz tube 1, which is divided into two sections 3 and 8 by a horizontal, porous partition 2. In the lower section 3 there is a supply 4 of doped, z. B. powdered silicon, which is heated by a heating coil 5 or another heating device to about 1300 ° C and is flowed through by entering 6 halogen or hydrogen halide (z. B. CHI, C12, Br2) and is gradually dissolved. Here z. B. Formation of SiHC13 or SiC14 takes place. The exhaust gases from this reaction are mixed with hydrogen at point 7 and pass through the porous wall 2 from below into section 8 of the reaction vessel 1. In this there is a conductive, heat-resistant material, e.g. B. also made of silicon support 9 on which the silicon semiconductor wafer 10 to be coated is located. The exhaust gases leave the reaction vessel at 11. A heater 12, e.g. B. a high-frequency coil ensures the heating of the carrier and thus the semiconductor wafer 10. It is heated to 1150 ° C., for example.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19641268600 DE1268600B (en) | 1964-11-16 | 1964-11-16 | Method for epitaxially depositing a single-crystal, in particular doped, semiconductor layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19641268600 DE1268600B (en) | 1964-11-16 | 1964-11-16 | Method for epitaxially depositing a single-crystal, in particular doped, semiconductor layer |
Publications (1)
Publication Number | Publication Date |
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DE1268600B true DE1268600B (en) | 1968-05-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE19641268600 Pending DE1268600B (en) | 1964-11-16 | 1964-11-16 | Method for epitaxially depositing a single-crystal, in particular doped, semiconductor layer |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2443137A1 (en) * | 1978-11-30 | 1980-06-27 | Labo Electronique Physique | Mfr. technique for epitaxial layers of semiconductor material - includes using homogenising chamber for carrier gas and deposited material to improve uniformity of deposition |
FR2555206A1 (en) * | 1983-11-22 | 1985-05-24 | Thomson Csf | LOW TEMPERATURE THERMAL DECOMPOSITION AMORPHOUS SILICON DEPOSITION METHOD AND DEVICE FOR IMPLEMENTING THE METHOD |
FR2555614A1 (en) * | 1983-08-16 | 1985-05-31 | Canon Kk | PROCESS FOR FORMING A FILM ON A SUBSTRATE BY VAPOR PHASE DECOMPOSITION |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE865160C (en) * | 1951-03-07 | 1953-01-29 | Western Electric Co | Method for producing a germanium layer on a germanium body |
-
1964
- 1964-11-16 DE DE19641268600 patent/DE1268600B/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE865160C (en) * | 1951-03-07 | 1953-01-29 | Western Electric Co | Method for producing a germanium layer on a germanium body |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2443137A1 (en) * | 1978-11-30 | 1980-06-27 | Labo Electronique Physique | Mfr. technique for epitaxial layers of semiconductor material - includes using homogenising chamber for carrier gas and deposited material to improve uniformity of deposition |
FR2555614A1 (en) * | 1983-08-16 | 1985-05-31 | Canon Kk | PROCESS FOR FORMING A FILM ON A SUBSTRATE BY VAPOR PHASE DECOMPOSITION |
FR2555206A1 (en) * | 1983-11-22 | 1985-05-24 | Thomson Csf | LOW TEMPERATURE THERMAL DECOMPOSITION AMORPHOUS SILICON DEPOSITION METHOD AND DEVICE FOR IMPLEMENTING THE METHOD |
EP0143701A1 (en) * | 1983-11-22 | 1985-06-05 | Thomson-Csf | Process for depositing amorphous silicon by low-temperature thermal decomposition, and apparatus for carrying out this process |
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