DE1264419B - Process for depositing a monocrystalline silicon layer from the gas phase on a silicon monocrystal - Google Patents
Process for depositing a monocrystalline silicon layer from the gas phase on a silicon monocrystalInfo
- Publication number
- DE1264419B DE1264419B DEM54600A DEM0054600A DE1264419B DE 1264419 B DE1264419 B DE 1264419B DE M54600 A DEM54600 A DE M54600A DE M0054600 A DEM0054600 A DE M0054600A DE 1264419 B DE1264419 B DE 1264419B
- Authority
- DE
- Germany
- Prior art keywords
- depositing
- silicon
- gas phase
- crystal
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 7
- 238000000034 method Methods 0.000 title claims description 7
- 229910052710 silicon Inorganic materials 0.000 title claims description 7
- 239000010703 silicon Substances 0.000 title claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 6
- 239000013078 crystal Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 7
- 239000007792 gaseous phase Substances 0.000 claims 1
- 238000012552 review Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 208000032544 Cicatrix Diseases 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N chloroform Substances ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. Cl.:Int. Cl .:
BOIjBOIj
Deutsche Kl.: 12 g-17/32 German class: 12 g -17/32
Nummer: 1264419Number: 1264419
Aktenzeichen: M 54600IV c/12 gFile number: M 54600IV c / 12 g
Anmeldetag: 24. Oktober 1962 Filing date: October 24, 1962
Auslegetag: 28. März 1968Opening day: March 28, 1968
Bekanntlich kann man einkristallines dotiertes Silicium auf einer einkristallinen Silicium-Unterlage aus der Dampfphase durch thermische Zersetzung einer Silicium-Halogen-Verbindung, die mit einer Verbindung eines Dotierungsstoffes und mit Wasserstoff gemischt ist, abscheiden. Dabei entstehen jedoch häufig Kristallstörungen.It is known that single-crystal doped silicon can be used on a single-crystal silicon substrate from the vapor phase by thermal decomposition of a silicon-halogen compound with a compound a dopant and mixed with hydrogen, deposit. In doing so, however, arise often crystal disturbances.
Beispielsweise treten pyramidenartige Gebilde sowohl rechteckiger als auch dreieckiger Form an der Oberfläche der abgeschiedenen Schicht auf. Häufig zeigen sich auch Stufenbildungen und Narben, bei denen kleine Hocker an der Oberfläche zu beobachten sind, oder auch lokale Veränderungen der Dicke, die in Form von groben Strukturen oder Schuppen an der Oberfläche vorkommen.For example, pyramid-like structures occur both rectangular and triangular in shape Surface of the deposited layer. Often there are also steps and scars which small stools can be observed on the surface, or local changes in thickness, which occur in the form of coarse structures or scales on the surface.
Der Eifindung liegt die Aufgabe zugrunde, hierzu eine Verbesserung zu erzielen. Sie bezieht sich auf ein Verfahren zum Abscheiden einer einkristallinen SiIicium-Schicht aus der Gasphase auf eine ebene Fläche eines Silicium-Einkristalls, welches dadurch gekennzeichnet ist, daß als Abscheidungsfläche eine Fläche verwendet wird, die einer um einen Winkel von mindestens 3/8° und höchstens 5° aus ihrer Lage gedrehten Kristallebene mit niedrigen Millerschen Indizes entspricht. The aim of the invention is to achieve an improvement in this regard. It relates to a method for depositing a monocrystalline SiIicium layer from the gas phase on a flat surface of a silicon single crystal, which is characterized in that a surface is used as the deposition surface, the one through an angle of at least 3/8 °, and corresponds to a maximum of 5 ° of the crystal plane rotated from its position with low Miller indices.
Vorzugsweise wählt man die Abscheidungsfläche so, daß sie einer in <211>-Richtung um einen Winkel von mindestens 3/8° und höchstens 5° aus ihrer Lage gedrehten (lll)-Fläche entspricht.Preferably, one selects the deposition surface so that it corresponds to an in <211> direction by an angle of at least 3/8 ° and at most 5 ° rotated from its position (lll) face.
Die nach dem erfindungsgemäßen Verfahren hergestellten Silicium-Schichten haben Oberflächen, die eben und praktisch frei von Unvollkommenheiten sind, weil eine derartige Fehlorientierung der ebenen Abscheidungsoberfläche für das Auskristallisieren des atomar dargebotenen Halbleiters energetisch günstigere Verhältnisse als eine mit einer Kristallebene mit niedrigen Miller-Indizes zusammenfallende Kristallisationsfläche bietet. Infolgedessen können die besagten Entartungen des Kristallwachstums vermieden werden. The silicon layers produced by the process according to the invention have surfaces that are flat and practically free from imperfections because of such a misorientation of the flat Deposition surface for crystallizing out the atomically presented semiconductor, energetically more favorable Ratios as a crystallization surface coinciding with a crystal plane with low Miller indices offers. As a result, the aforementioned crystal growth degeneracies can be avoided.
Die Abscheidungstemperatur auf der Substratoberfläche beträgt zweckmäßig 1150 bis 12000C.The deposition temperature on the substrate surface is expediently 1150 to 1200 ° C.
Als aktive Verbindung kann Süiko-Chloroform oder Silicium-Tetrachlorid dienen. Siliko-Chloroform wird z.B. nach der RelationThe active compound can be Süiko-Chloroform or silicon tetrachloride. Silicochloroform is e.g. according to the relation
3 SiHCl3 + H2 -h> 2 Si + SiCl4 + 5 HCl3 SiHCl 3 + H 2 -h> 2 Si + SiCl 4 + 5 HCl
zersetzt.decomposed.
F i g. 1 zeigt das für die Bereiche A und C einer auf eine einkristalline Silicium-Unterlage abgeschiedenen
einkristallinen Silicium-Schicht charakteristische Interferenzbild während der optischen Prüfung. Dazu
Verfahren zum Abscheiden einer einkristallinen
Silicium-Schicht aus der Gasphase
auf einem Silicium-EinkristallF i g. 1 shows the interference pattern characteristic of regions A and C of a monocrystalline silicon layer deposited on a monocrystalline silicon substrate during the optical inspection. To do this, a method for depositing a single crystal
Silicon layer from the gas phase
on a silicon single crystal
Anmelder:Applicant:
Siemens Aktiengesellschaft, Berlin und München, 8000 München 2, Witteisbacherplatz 2Siemens Aktiengesellschaft, Berlin and Munich, 8000 Munich 2, Witteisbacherplatz 2
Als Erfinder benannt:Named as inventor:
John Edward Allegretti,John Edward Allegretti,
East Brunswick, N. J. (V. St. A.)East Brunswick, N. J. (V. St. A.)
Beanspruchte Priorität:Claimed priority:
V. St. v. Amerika vom 27. Oktober 1961 (148 253)V. St. v. America October 27, 1961 (148 253)
wurde ein Gemisch aus Siliko-Chloroform und Wasserstoff bei 1150 bis 12000C thermisch zersetzt. Die Unterlage ist um vier Bogengrade gegen die (lll)-Ebene gedreht. Aus dieser Figur ersieht man, daß die Oberflächenschicht in dem Bereich A praktisch frei von Verzerrungen der Interferenzbilder ist, woraus sich ergibt, daß dieser Bereich frei von Oberflächenunvollkommenheiten ist. Mathematisch gesprochen bedeutet dies, daß der Bereich A weniger als eine Interferenzlinie über 20 mm besitzt, quer über die Oberfläche gemessen.a mixture of silico-chloroform and hydrogen at 1150 to 1200 0 C was thermally decomposed. The base is rotated by four degrees of arc against the (III) plane. It can be seen from this figure that the surface layer in the area A is practically free from distortion of the interference patterns, from which it can be seen that this area is free from surface imperfections. Mathematically speaking, this means that area A has less than an interference line over 20 mm measured across the surface.
F i g. 2 veranschaulicht schematisch die Art der Herstellung einer richtig orientierten Silicium-Einkristallunterlage 10. Durch den Einkristallkörper ist ein Schnitt längs der Linien 11-12 gelegt worden, der unter einem Winkel Θ verläuft, so daß sich eine Oberfläche 13 darbietet. Der Schnitt ist unter einem Winkel von Θ° gegen die (lll)-Orientierung in der <211>Richtung des Kristalls gelegt.F i g. 2 schematically illustrates the manner in which a correctly oriented silicon single crystal substrate 10 is produced. A section has been made through the single crystal body along the lines 11-12 , which section runs at an angle Θ , so that a surface 13 is presented. The cut is made at an angle of Θ ° to the (III) -orientation in the <211> direction of the crystal.
Claims (3)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1264419XA | 1961-10-27 | 1961-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1264419B true DE1264419B (en) | 1968-03-28 |
Family
ID=22424850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEM54600A Pending DE1264419B (en) | 1961-10-27 | 1962-10-24 | Process for depositing a monocrystalline silicon layer from the gas phase on a silicon monocrystal |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1264419B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109874A1 (en) * | 1970-03-02 | 1971-09-16 | Hitachi Ltd | Semiconductor device with a monocrystalline silicon body |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE865160C (en) * | 1951-03-07 | 1953-01-29 | Western Electric Co | Method for producing a germanium layer on a germanium body |
-
1962
- 1962-10-24 DE DEM54600A patent/DE1264419B/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE865160C (en) * | 1951-03-07 | 1953-01-29 | Western Electric Co | Method for producing a germanium layer on a germanium body |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109874A1 (en) * | 1970-03-02 | 1971-09-16 | Hitachi Ltd | Semiconductor device with a monocrystalline silicon body |
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