DE1263092B - Process for the production of data memories and arrangement for carrying out the process - Google Patents

Description

FEDERAL REPUBLIC OF GERMANY

GERMAN

PATENT OFFICE

EDITORIAL

Int. CL:

GlIc

German KL: 21 al - 37/66

Number: . 1,263,092

File number: J 23740IX c / 21 al

Filing date: May 18, 1963

Opening day: March 14, 1968

It is already a method of creating a non-erasable magnetic record on a Magnetogram carriers have been proposed. In this process, a cobalt-substituted one is used Magnetite precipitated from an aqueous solution and applied to the magnetogram carrier. Thereafter individual areas of the magnetic layer are heated to a temperature of 100 to 200 ° C and then cooled in a magnetic field and thus magnetically remunerated.

With this and the memories previously used in technology, there is only ever per memory element a memory state is available, and the generated and processed signals are usually on only medium limited.

Memory produced by the method according to the invention are capable of not just one, but to store multiple information states.

The invention relates to two methods of manufacturing data memories.

One of the two methods of manufacturing data memories is characterized in that under Use of the known chemical reaction in which, under the action of temperature, a gaseous Compound of an element of group IV of the periodic table, in particular a halogen compound, the element of group IV is split off in the solid or liquid state of aggregation, the The effect of temperature is directed to spatially delimited information carrier areas in which form salivary elements from the element of group IV.

The other of the two methods of manufacturing data memories is characterized in that using the well-known chemical reaction in which a Group IV element is in solid or liquid state of aggregation due to the action of temperature, a gaseous compound, in particular with a halogen, the temperature effect so on spatially delimited areas of a layer is directed from a Group IV element that in the not exposed to temperature Areas of memory elements are left behind.

In one embodiment of the invention, the discrete storage space is a nickel film that is produced by a small-area heat action on an element carrier in contact with a nickel tetracarbonyl gas. The film thus formed has optical, magneto-optical and magnetic properties. A very high density of film dots is possible. Such an arrangement, by the presence or absence of the film, enables methods of manufacturing data storage media
and arrangement for carrying out the procedure

Applicant:

International Business Machines Corporation,
Armonk, NY (V. St. A.)

Representative:

Dipl.-Ing. H. E. Böhmer, patent attorney,

7030 Boeblingen, Sindelfinger Str. 49

Named as inventor:
Euval Salomon bar chain,
Eric Donath, New York, NY;
Harold Henry Herd,
Pacific Grove, Calif. (V. St. A.)

Claimed priority:

V. St. ν. America May 18, 1962 (195 859)

as well as its physical state, logical operations and converts information from one signal medium to another. The presence or The absence of the film in connection with its physical state is irreversible to achieve logical functions are particularly valuable.

Further details can be found in the description and the drawings listed below.

Fig. 1 is a schematic representation of the Invention illustrating the formation, removal, and sensing of memory locations;

F i g. Figure 2 shows the use of certain optical properties in the invention;

F i g. Figure 3 illustrates the invention by illustrating the magnetic properties;

F i g. 4 shows a rectangular hysteresis curve showing the states of magnetic materials and optical Represents polarization effects;

F i g. Figure 5 is an illustration of the invention showing the magneto-optic properties.

The features and advantages of the invention are realized by the formation of information elements in certain areas on an element carrier through the optional action of heat on spatially delimited areas of the gaseous com-

809 518/490

3 4

component of a chemical compound whose tempe- F i g. 1 schematically illustrates the main

Temperature sensitive reversible response in the one feature of the invention. In the arrangement according to Direction at one temperature and in the opposite direction. 1, a container 1 lies on an element carrier 2. set direction at a different temperature in front of the container 1 for the formation of logical elements goes, after which the presence of the Mate 5 an inlet opening 3 and an outlet opening 4, the rials and the physical properties of the material are arranged so that a gaseous phase of a rials are used to put logical information in temperature-sensitive chemical compound in Forward information channels. enter the inlet opening 3 and the element

There is a class of chemical reactions that carrier 2 can sweep over before going through the reversible are that a gaseous component in io outlet opening 4 exits. A heat source 5 for the local A state and a non-gaseous grain borrowed limited application of heat is so adapted have in the other state and which by arranges that they are on a limited area of the Optionally, the effect of heat can be reversed- element support 2 can act. That formed nen. Two well-known examples of this class of storage element 6 is a non-gaseous phase Reactions are the carbonyl reactions, e.g. B. those in 15 connection after exposure to heat. They don't the nickel tetracarbo-gaseous phase known from gas coating technology can be in any other physical nyl and iron carbonyl reactions in which z. B. form, liquid or solid, as long as they are physicaein Nickel carbonyl or iron carbonyl gas has the same properties as the one to be used Heating nickel or iron deposits as well as the class signal medium are useful. The memory element 6 the halogen reactions of Group IV elements 20 can be achieved in part by preparing corresponding of the periodic table, which in semiconductor technology are removed from thermal conditions. That can be known is. In this type of reaction, the halogen continues to be accelerated by using an appropriate medium Compound with elements of group IV at their through a separate inlet opening 7 is introduced. Heat the Group IV element off. The information contained in the memory element 6

The carbonyl reaction can be described as follows 25 tion can then be processed in information channels will: be, one of which is schematically represented by elements 8

and 9 is shown. The container 1 and the element

W 4- 4 (CO) heat ^ . ". ". carrier 2 can be made of any material

* stand that does not enter into any harmful reactions and

W is z. B. nickel or iron, as above 30 the signals through which the memory element 6 is effective

described. should be made does not bother. For example can

This reaction can be light-polarized by lowering the temperature of the element supports and / or the containers.

vice versa and by the action of having carbon-oxidizing properties or containing wires, be accelerated. The atmosphere can then be as will be described.

be cleaned by passing them through an ice bath 35. According to the invention, it is sent to the actual forming process. The application of the nickel carbonyl reaction tion of the 'storage element 6 is a gaseous phase is known in the gas plating art. a connection with temperature controllable reaction,

The Group IV - Halogen reaction is one reaction - one non-gaseous component in the other tion of a Group IV element of the Periodic Reaction Phase into the container through the System with a halogen, e.g. B. germanium or inlet opening 3 introduced via the element carrier 2 Silicon with iodine. During this reaction, the influence is transferred away and through the outlet opening 4 encountered the Group IV element by heat. The heat necessary for the reaction is away. These reactions occur both when increased and usually through the element support even when the temperature is lowered and can be at certain points where the storage elements are created iles are to be generated by the application of delimited temperature, specifically by the methods shown in FIG. 1 schema reverses will. An example for the heat source 5 shown on an elevated table, the temperature temperature appealing reaction with silicon is distinguished in spatially delimited areas of the represented by: Element carrier 2 manufactures. This means that the chemi

cal reaction at the specific points in motion

gjj ₍ heat ^ ^ _5o brought so that through the gaseous phase a

^% "* · (· 2 w a certain amount of non-gaseous material

This reaction is known in the art as van-Arkelsche the element carrier is put down. That down reaction known. whipped, non-gaseous material is then that

An example of a storage element 6 for lowering the temperature. The heat source 5 can be any reaction with germanium and iodine which is discussed in detail. B. a focused light beam, an electron beam, a laser beam or a heat radiating 2 Q _e j ₍ warmth ^ _{O (} j _he absorbing electrical connection point in

² * * ⁴ the element carrier 2.

Each of these chemical reactions is dependent on the 60 The non-gaseous material serves as a storage type reversible to the effect of temperature. It is an element of 6. Depending on the physical properties gaseous component in the one state and the storage element 6 can contain the information in a non-gaseous component in another at least one other information channel ver state available. This reaction will be invented. The element 8 can, for. A light according to used to manufacture a storage element, 65 or electricity source and the element 9 for example a which enables logical operations and the implementation can be a photocell or an electrical sensing coil, of information from a signal medium into a single stacked storage element

other allows. valuable storage properties. Since electron beam

len and laser light beams can be focused on a point with a diameter of less than 25 μ, densities on the order of 10 ^B elements per square centimeter can be achieved. Since the memory * elements can optionally be changed and deleted individually, you also get a memory with large capacity, high speed and fast access, which can be changed independently of all the information in the memory.

Both the presence and absence of a storage element can be used as a criterion for data storage as well as its physical properties are exploited.

If the memory element 6 is deposited from a nickel carbonyl gas according to equation 1 and is thus a nickel film, it not only has optical properties by being opaque, but also magnetic properties characterized by a rectangular hysteresis loop, and it also has magneto-optical properties by being rotates the plane of polarized light according to the Faraday effect. When the storage element is made of germanium or silicon, as described in connection with equations 2 and 3, physical properties inherent in the particular deposited element ₅ are available for information processing purposes.

According to the invention, the storage element 6 can also be removed by locally limited exposure to heat will. The reaction can be accelerated by covering the storage element 6 with a substance which is such that it is returned to the gaseous phase and then discharged through the outlet opening 4. To introduce this gaseous Substance is z. B. an inlet opening 7 is provided, but it should be clear to those skilled in the art that the inlet opening 3 can also be used for this purpose with the aid of suitable valve devices could.

In the Nickelkarbonylreaktion according to Equation 1, the memory element 6, can be removed by heating it at about 8O ⁰ C and introduced simultaneously via the inlet opening 7 carbon monoxide gas. In the group IV halogen reaction according to equation 2, which is the pyrolytic decomposition of a silicon-halogen gas, the introduction of iodine through the opening 7 in the presence of sufficient heat forms silicon iodide, which is then removed through the outlet opening 4 will. In equation 3, which relates to the pyrolytic decomposition of germanium and a halogen, the formation of the storage element 6 makes a localized area of the element carrier the coolest point in the system, and therefore it should be clear to those skilled in the art that the optional action of Heat on the area of the storage element 6 instead of on the entire area _{results in the formation of germanium diiodide (GeJ 2} ) from the germanium forming the storage element 6. This can be accelerated by z. B. germanium tetraiodide (GeJ ₄ ) is introduced into the inlet opening 7 and the heat source 5 becomes effective, so that the material of the storage element 6 changes into the gaseous phase and is expelled from the outlet opening 4.

One of the main advantages of the memory elements produced by the method according to the invention lies in the fact that they have properties that can be felt in different ways. That means with others Words that the information can be chemically stored and that its presence z. B. optical, magnetic and / or can be determined magneto-optically. In each of the applications the memory contents duich the presence or absence of a memory element 6 is shown. Physical Properties or the states of the material are available as other logical variables. When a

ίο there is a dominant variable, namely that Presence or absence of the information storage element 6, and at least one other variable, namely, the magnetic or optical state of the material from which the memory element 6 is made, so these are particularly suitable for information processing with logical operators that are supported by the Presence or absence of a certain variable, and not just of the number of existing ones or missing variables. This relationship is known in technology as "Non-commutative" known. It enables large numbers of logical operators in an information system with a given number of variables.

To illustrate, consider a condition which is involved in purely binary signal levels and the presence of the memory element 6 in FIG. 1 represents the logical variable / »and its absence therefore» not p «or ρ . Since the logical storage element has different physical properties which can be used for logical purposes, it is also assumed that the presence or absence of the dominant variable ρ is due to a second variable which uses light as a signal medium and which, when switched off, has the value 'q and, when turned on, represents the value q .

There are two "non-commutative" logical operators with two variables, one of which is dominant. The first is the logical formula "IF, THEN," which is denoted by the D symbol. This logical operator indicates the absence of an output signal depending on the presence of one variable and the absence of the other. This is sometimes logically described by "IF p, THEN 9". The second logical operator is the negation of the first and has the symbol φ; it is referred to as "BUT NOT". This logical operator indicates the presence of the dominant variable and the absence of the second.

The following truth table is intended to illustrate some of the applications of the device:

Table I.

P. q 1 ρφ? 1 1–1 1 0 6ο 0 1 0 0 1 0 1 1 0 0 0

If a physical property of the storage element is available, e.g. B. the magnetic State of the applied material in the case of a nickel film, and this state is either magnetic or is optically exploited, this property can

can be used as a third logical variable. As the system processes larger numbers of variables, the storage element becomes very important, and the number of "non-commutative" operators in the system quickly exceeds the number of "commutative" operators, so that the set of processable logical operators available with this type of operator Information becomes much larger as a result of this increased flexibility. As an example, FIG. 2 illustrates a practical embodiment of some of the optical properties of the invention, namely the heating element for selection of the local site is shown as a lamp 5 A, the element carrier 2 and the container 1 are translucent, and the presence or absence of the memory element 6 is a light source 8.4 query which is sensed by a photocell 9 a. Among the in F i g. 2 conditions would be a memory

for a "non-commutative" operator, let it be one with io element 6, which is represented by a suitable chemical reaction three Considered mutable. The presence of tion, as defined by any of Equations 1,

or the absence of the storage element 6 can, as described above, be denoted by ρ or ρ. It is further assumed that the memory element 6 has both magnetic and magneto-optical properties. As described above, the magnetic state of the storage element 6 can again be denoted by q or q ~ , and the presence or absence of polarized light passing through the magnetic storage element can be represented by the variable r or 7. Under these circumstances, as shown in Table II below, when the memory element 6 is present, its material is in the one magnetic state and the polarized light is on and an output signal is received. Since all of the conditions must be met, the logical operator A in Table II is actually a three-input AND function. For purposes of description, the

logical operator denoted by a letter, 30 angular hysteresis loop, that of a line in the truth table in which a "1" F i g. 4 illustrates

appears, corresponds.

The second condition is the presence or absence of the memory element 6 as a variable /? Which has a physical property, e.g. B. the magnetic state of the material of the memory element 6, as variable q and a second physical property of the material of the memory element 6, e.g. the rotation of the polarized Lieh-2 or 3 caused by it, is generated where the logical functions according to the table I enable. The heat source 5A can be generated by the use of an electron beam, by optical methods, or by the use of a coherent light source such as e.g. B. a laser, can be focused to a very fine density.
As in Fig. 2 and Table I, binary information is determined by the permeability or opacity of the storage element 6 for light from the light source 8, 4.

Fig. 3 shows the magnetic properties of the device. There read, write and sensing windings 8 B, 8 C and 8 D are provided in magnetic coupling with the storage element 6. Under these conditions, the storage element can be brought into one of two states via the write winding 8 C, corresponding to its roughly right-

schematically a rectangular hysteresis loop, at one end of which the binary 1 and at the other end of which there is binary 0. The light polarization properties are am appropriate part of the loop.

According to FIG. 3 and 4, the storage element 6 becomes the storage element 6 through an electrical current pulse on winding 8C into the magnetic state 1 according to FIG. 4 brought. In this state 1 causes a pulse signal to

tes, considered as variable r ; an output signal 40 winding 8B the material of the storage element 6, in is generated when q is equal to zero and r is equal to one. to go the O-state of its hysteresis loop, where-Under these circumstances the dominant variable ^ must be present, the polarized light must r

rotated and allowed to pass, and an output signal is only obtained with the combination of these two conditions if the magnetic state q of the material of the memory element 6 is equal to zero, i.e. ~ q . These conditions give rise to the logical operator C, which is shown in Table II.

Table II

is generated by a signal pulse in the sensing winding 8 D.

It should be clear to a person skilled in the art that the representations in the figures only indicate the principle and only show the features of the invention that are open to the bed.

If the material of the memory element 6 has further properties of a rectangular hysteresis loop, as in FIG. 4, a beam of polarized light is rotated in accordance with the magnetic state of the material of the memory element 6 due to the Faraday effect. The utilization of this property is shown in FIG. 5 shown schematically. There, the storage element 6 can assume two stable magnetic states, as shown in FIG. 4 shows, and a direction of rotation of a polarized light beam is optically assigned to each magnetic state. These directions of polarization are designated as clockwise 60 and counterclockwise. Fig. 5 shows the presence of the memory element 6 by formation, as described above. Then polarized light from a light source 8 E through the storage element 6 and. With the help of the discussion above, the two optical polarization elements 10, 4 and 105, possibilities for logical 65 z. Polaroids, Nicoische prisms, or Kerr cells, operators are illustrated, although in view of being guided, which are arranged so that their levels of teaching of the invention would suggest many such polarized lights perpendicular to each other and in logical operators to those skilled in the art. part of the path of the light from the light source 8E

P. q r A. C. A. 1 1 1 1 0 B. 0 1 1 0 0 C. 1 0 1 0 1 D. 0 0 1 0 0 E. 1 1 0 0 0 F. 0 1 0 0 0 G 1 0 0 0 0 H 0 0 0 0 0

lie. The magnetic state of the storage element 6 is adjusted depending on the energy supplied to a winding SF so that when the storage element 6 is set in the magnetic state 1 (FIG. 4), an electrical signal on the winding SF causes the polarized light from the light source 8 E in it State is rotated to the right and so is perpendicular to the plane of polarization of the polarization element 105. This combination is then opaque to the polarized light and the photocell 9D receives no signal. At the same time, the polarized light, which is rotated by the magnetic state of the storage element 6, coincides with the polarization plane of the polarization element 10.4 and leads to the generation of a signal at the photocell 9C

When the electrical signal applied to winding 8 F brings the storage element 6 into the O state, as shown in FIG. 4, a polarized light signal to photocell 9 is D, but not received at 9 C. The arrangement according to FIG. So 5 not only forms independent logical operators with three independent variables, but it also forms the inverse of the logical operator at the same time as the operator itself.

For the expert, in view of the foregoing standing doctrine be obvious that taking advantage of the principles of the invention very many changes are possible in the construction. For example, magnetic read, write and sense conductors can be inserted into the Container and the element carrier are installed. Likewise, light sources, polarization and other optical properties can be made part of the container itself.

Claims (4)

Claims: 35 1. A method for the production of data memories, characterized in that under Use of the known chemical reaction in which under the action of temperature from a gaseous compound of an element of group IV of the periodic table, in particular one Halogen compound, the element of group IV split off in the solid or liquid state of aggregation is directed, the temperature effect on spatially delimited information carrier areas in which memory elements are formed from the element of group IV. 2. A method for producing data memories, characterized in that using the well-known chemical reaction in which a Group IV element is in solid or liquid State of aggregation due to the action of temperature a gaseous compound, in particular with a halogen, the effect of temperature on spatially delimited areas of a layer is directed from a Group IV element that in the not exposed to temperature Areas of memory elements are left behind. 3. The method according to claim 1 or 2, characterized in that the storage material is nickel or iron is used and that the storage elements according to the equation W + 4 (CO) warmth W (CO) ₄ where W is nickel or iron. 4. The method according to claim 1 or 2, characterized characterized in that silicon is used as memory elements and that the memory elements according to the equation warmth + h are formed. 5. The method according to claim 1 or 2, characterized in that germanium as the storage material is used and that the memory elements according to the equation 2GeJ ₂ warmth GeJ. + GeJ ₄ are formed. 6. Arrangement for performing the method according to one of claims 1 to 5, characterized in that that the information carrier forms a cavity together with a container through which the gaseous compound is passed. 7. Arrangement for performing the method according to one of claims 1 to 6, characterized in that that as a heat source either a focused light or electron beam, a laser beam or a heat generating or absorbent electrical connection point is used on the carrier. 1 sheet of drawings 809 518/490 3.63 © Bundesdruckerei Berlin