DE1250004B - - Google Patents

Info

Publication number
DE1250004B
DE1250004B DENDAT1250004D DE1250004DA DE1250004B DE 1250004 B DE1250004 B DE 1250004B DE NDAT1250004 D DENDAT1250004 D DE NDAT1250004D DE 1250004D A DE1250004D A DE 1250004DA DE 1250004 B DE1250004 B DE 1250004B
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DENDAT1250004D
Other languages
German (de)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of DE1250004B publication Critical patent/DE1250004B/de
Pending legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/22—Metal melt containing the element to be diffused
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DENDAT1250004D 1963-08-19 Pending DE1250004B (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US302991A US3272669A (en) 1963-08-19 1963-08-19 Method of simultaneously fabricating a plurality of semiconductor p-nu junction devices
US55358866A 1966-02-25 1966-02-25

Publications (1)

Publication Number Publication Date
DE1250004B true DE1250004B (enExample)

Family

ID=26973200

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT1250004D Pending DE1250004B (enExample) 1963-08-19

Country Status (6)

Country Link
US (2) US3272669A (enExample)
CH (1) CH427041A (enExample)
DE (1) DE1250004B (enExample)
GB (1) GB1053105A (enExample)
NL (1) NL6409306A (enExample)
SE (1) SE317134B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297758B (de) 1964-10-12 1969-06-19 Matsushita Electronics Corp Verfahren zur Herstellung von Halbleiterbauelementen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355335A (en) * 1964-10-07 1967-11-28 Ibm Method of forming tunneling junctions for intermetallic semiconductor devices
US3512051A (en) * 1965-12-29 1970-05-12 Burroughs Corp Contacts for a semiconductor device
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859140A (en) * 1951-07-16 1958-11-04 Sylvania Electric Prod Method of introducing impurities into a semi-conductor
NL250879A (enExample) * 1959-08-05
NL131156C (enExample) * 1959-08-11
US3027501A (en) * 1959-09-29 1962-03-27 Bell Telephone Labor Inc Semiconductive device
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
US3069604A (en) * 1960-08-17 1962-12-18 Monsanto Chemicals Tunnel diode
US3160534A (en) * 1960-10-03 1964-12-08 Gen Telephone & Elect Method of making tunnel diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297758B (de) 1964-10-12 1969-06-19 Matsushita Electronics Corp Verfahren zur Herstellung von Halbleiterbauelementen

Also Published As

Publication number Publication date
SE317134B (enExample) 1969-11-10
CH427041A (de) 1966-12-31
US3475071A (en) 1969-10-28
GB1053105A (enExample)
US3272669A (en) 1966-09-13
NL6409306A (enExample) 1965-02-22

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