DE1219379C2 - - Google Patents

Info

Publication number
DE1219379C2
DE1219379C2 DE1962S0081153 DES0081153A DE1219379C2 DE 1219379 C2 DE1219379 C2 DE 1219379C2 DE 1962S0081153 DE1962S0081153 DE 1962S0081153 DE S0081153 A DES0081153 A DE S0081153A DE 1219379 C2 DE1219379 C2 DE 1219379C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1962S0081153
Other languages
German (de)
Other versions
DE1219379B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DES81153A priority Critical patent/DE1219379B/de
Publication of DE1219379B publication Critical patent/DE1219379B/de
Application granted granted Critical
Publication of DE1219379C2 publication Critical patent/DE1219379C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DES81153A 1962-08-29 1962-08-29 Verfahren zum Herstellen von kristallinen Halbleiterscheiben fuer Halbleiterbauelemente aus einem kristallinen Halbleiterstab Granted DE1219379B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES81153A DE1219379B (de) 1962-08-29 1962-08-29 Verfahren zum Herstellen von kristallinen Halbleiterscheiben fuer Halbleiterbauelemente aus einem kristallinen Halbleiterstab

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES81153A DE1219379B (de) 1962-08-29 1962-08-29 Verfahren zum Herstellen von kristallinen Halbleiterscheiben fuer Halbleiterbauelemente aus einem kristallinen Halbleiterstab

Publications (2)

Publication Number Publication Date
DE1219379B DE1219379B (de) 1966-06-16
DE1219379C2 true DE1219379C2 (da) 1966-12-29

Family

ID=7509379

Family Applications (1)

Application Number Title Priority Date Filing Date
DES81153A Granted DE1219379B (de) 1962-08-29 1962-08-29 Verfahren zum Herstellen von kristallinen Halbleiterscheiben fuer Halbleiterbauelemente aus einem kristallinen Halbleiterstab

Country Status (1)

Country Link
DE (1) DE1219379B (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011008854A1 (de) * 2011-01-18 2012-07-19 Centrotherm Sitec Gmbh Verfahren zum Schneiden von Halbleitermaterialien

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2725318A (en) * 1952-07-07 1955-11-29 Gen Electric Method of plastic working of semiconductors
DE1115937B (de) * 1952-08-19 1961-10-26 Standard Elektrik Lorenz Ag Verfahren zur plastischen Verformung von Germanium und Silicium

Also Published As

Publication number Publication date
DE1219379B (de) 1966-06-16

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