DE1166381C2 - - Google Patents

Info

Publication number
DE1166381C2
DE1166381C2 DE1956S0049370 DES0049370A DE1166381C2 DE 1166381 C2 DE1166381 C2 DE 1166381C2 DE 1956S0049370 DE1956S0049370 DE 1956S0049370 DE S0049370 A DES0049370 A DE S0049370A DE 1166381 C2 DE1166381 C2 DE 1166381C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1956S0049370
Other languages
German (de)
Other versions
DE1166381B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DES49370A priority Critical patent/DE1166381B/de
Publication of DE1166381B publication Critical patent/DE1166381B/de
Application granted granted Critical
Publication of DE1166381C2 publication Critical patent/DE1166381C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
DES49370A 1956-07-06 1956-07-06 Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen Granted DE1166381B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES49370A DE1166381B (de) 1956-07-06 1956-07-06 Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES49370A DE1166381B (de) 1956-07-06 1956-07-06 Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen

Publications (2)

Publication Number Publication Date
DE1166381B DE1166381B (de) 1964-03-26
DE1166381C2 true DE1166381C2 (en, 2012) 1964-10-01

Family

ID=7487249

Family Applications (1)

Application Number Title Priority Date Filing Date
DES49370A Granted DE1166381B (de) 1956-07-06 1956-07-06 Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen

Country Status (1)

Country Link
DE (1) DE1166381B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437107A (en) 1980-10-08 1984-03-13 Asea Aktiebolag Self-igniting thyristor with a plurality of discrete, field controlled zener diodes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE484779A (en, 2012) * 1948-02-26
NL84061C (en, 2012) * 1948-06-26
US2612567A (en) * 1949-10-04 1952-09-30 Stuetzer Otmar Michael Transconductor employing field controlled semiconductor
NL202404A (en, 2012) * 1955-02-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437107A (en) 1980-10-08 1984-03-13 Asea Aktiebolag Self-igniting thyristor with a plurality of discrete, field controlled zener diodes

Also Published As

Publication number Publication date
DE1166381B (de) 1964-03-26

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