DE1160550C2 - - Google Patents

Info

Publication number
DE1160550C2
DE1160550C2 DE1960ST017146 DEST017146A DE1160550C2 DE 1160550 C2 DE1160550 C2 DE 1160550C2 DE 1960ST017146 DE1960ST017146 DE 1960ST017146 DE ST017146 A DEST017146 A DE ST017146A DE 1160550 C2 DE1160550 C2 DE 1160550C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1960ST017146
Other languages
German (de)
Other versions
DE1160550B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DEST17146A priority Critical patent/DE1160550B/de
Priority to FR879844A priority patent/FR1310792A/fr
Priority to FR898800A priority patent/FR82217E/fr
Publication of DE1160550B publication Critical patent/DE1160550B/de
Application granted granted Critical
Publication of DE1160550C2 publication Critical patent/DE1160550C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DEST17146A 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb Granted DE1160550B (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DEST17146A DE1160550B (de) 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb
FR879844A FR1310792A (fr) 1960-11-23 1961-11-23 Diodes tunnel ou organes semi-conducteurs analogues
FR898800A FR82217E (fr) 1960-11-23 1962-05-25 Diodes tunnel ou organes semi-conducteurs analogues

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEST17146A DE1160550B (de) 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb

Publications (2)

Publication Number Publication Date
DE1160550B DE1160550B (de) 1964-01-02
DE1160550C2 true DE1160550C2 (en, 2012) 1964-07-16

Family

ID=37438030

Family Applications (1)

Application Number Title Priority Date Filing Date
DEST17146A Granted DE1160550B (de) 1960-11-23 1960-11-23 Tunneldiode mit je einer sperrfreien Kontaktelektrode an den beiden Zonen und Verfahren zum Betrieb

Country Status (1)

Country Link
DE (1) DE1160550B (en, 2012)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor

Also Published As

Publication number Publication date
DE1160550B (de) 1964-01-02

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