DE112019003306A5 - DEVICE WITH ELECTRICAL CONTACT STRUCTURE - Google Patents

DEVICE WITH ELECTRICAL CONTACT STRUCTURE Download PDF

Info

Publication number
DE112019003306A5
DE112019003306A5 DE112019003306.9T DE112019003306T DE112019003306A5 DE 112019003306 A5 DE112019003306 A5 DE 112019003306A5 DE 112019003306 T DE112019003306 T DE 112019003306T DE 112019003306 A5 DE112019003306 A5 DE 112019003306A5
Authority
DE
Germany
Prior art keywords
electrical contact
contact structure
electrical
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112019003306.9T
Other languages
German (de)
Inventor
Tobias Dyck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
4JET Microtech GmbH
Original Assignee
4JET Microtech GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 4JET Microtech GmbH filed Critical 4JET Microtech GmbH
Publication of DE112019003306A5 publication Critical patent/DE112019003306A5/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/42Printed circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • B23K26/386Removing material by boring or cutting by boring of blind holes
DE112019003306.9T 2018-06-29 2019-06-27 DEVICE WITH ELECTRICAL CONTACT STRUCTURE Pending DE112019003306A5 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE202018103749.8U DE202018103749U1 (en) 2018-06-29 2018-06-29 Device with electrical contact structure
DE202018103749.8 2018-06-29
PCT/EP2019/067258 WO2020002560A2 (en) 2018-06-29 2019-06-27 Device having electrical contact structure

Publications (1)

Publication Number Publication Date
DE112019003306A5 true DE112019003306A5 (en) 2021-03-18

Family

ID=62983027

Family Applications (2)

Application Number Title Priority Date Filing Date
DE202018103749.8U Active DE202018103749U1 (en) 2018-06-29 2018-06-29 Device with electrical contact structure
DE112019003306.9T Pending DE112019003306A5 (en) 2018-06-29 2019-06-27 DEVICE WITH ELECTRICAL CONTACT STRUCTURE

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE202018103749.8U Active DE202018103749U1 (en) 2018-06-29 2018-06-29 Device with electrical contact structure

Country Status (2)

Country Link
DE (2) DE202018103749U1 (en)
WO (1) WO2020002560A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021013333A1 (en) * 2019-07-22 2021-01-28 Technische Hochschule Aschaffenburg Electrical connection pad with enhanced solderability and corresponding method for laser treating an electrical connection pad

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005062932B4 (en) * 2005-12-29 2015-12-24 Polaris Innovations Ltd. Chip carrier with reduced interference signal sensitivity
DE102006049562A1 (en) * 2006-10-20 2008-04-24 Qimonda Ag Substrate e.g. germanium substrate, manufacturing method for use in semiconductor module, involves sealing channel with material e.g. gold, and filling channel with electrically conductive material e.g. copper
US10197623B2 (en) * 2016-09-15 2019-02-05 Texas Instruments Incorporated Heatable interposer for temperature-controlled testing of semiconductor devices

Also Published As

Publication number Publication date
DE202018103749U1 (en) 2018-07-06
WO2020002560A3 (en) 2020-02-20
WO2020002560A2 (en) 2020-01-02

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