DE112016006457T5 - Adaptive tuning network for combinable filters - Google Patents

Abstract

A flexible multi-path radio frequency (RF) adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF bandpass filters, particularly in a carrier aggregation based radio system. In one variant, a digitally controlled tunable matching network is coupled to a multipath RF switch to provide adaptive impedance matching for various combinations of RF bandpass filters. Optionally, some or all of the RF bandpass filters also include an associated digitally-controlled filter pre-matching network to further improve impedance matching. In a second variant, some or all of the RF bandpass filters coupled to a multipath RF switch include a digitally controlled phasing network to provide the necessary per-band impedance matching. Optionally, a digitally controlled, tunable matching network may be included at the common terminal of the multi-path RF switch to provide additional impedance matching capacitances.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit of US Patent Application Serial No. 15 / 048,764, filed February 19, 2016, for an "Adaptive Tuning Network for Combinable Filters", which is incorporated herein by reference.

BACKGROUND

Technical area

The invention relates to electronic circuits, and more particularly to radio frequency electronic circuits and related methods.

background

A simple radio system generally operates in a radio frequency (RF) band for transmitting RF signals and in a separate RF band for receiving RF signals. An RF band typically spans a frequency range (e.g., 10-100 MHz per band), and the actual signal transmission and reception in subbands of such bands may be separate to avoid interference. Alternatively, two widely spaced RF bands may be used for signal transmission or reception.

More advanced radio systems, such as some cellular systems, can operate on multiple RF bands for signal transmission and reception, but at any one time use only a transmission subband and a reception subband within a single RF band, or only two widely spaced ones Transmission and reception RF bands. Such a multi-band operation allows a single radio system to interoperate with various international frequency allocations and signal coding systems (e.g., CDMA, GSM). For some applications, international standardization bodies have provided common frequency bands with band names, Bn, such as B1, B3, B7, etc. A list of such bands can be found at https://en.wikipedia.org/wiki/UMTS_frequency_bands.

In recent years, a technique called "carrier aggregation" (CA) has been developed to increase the bandwidth for RF radio systems, and in particular for mobile radio systems. In a version of CA known as "inter-band" mode, mobile radio reception or transmission over multiple RF bands may occur simultaneously (e.g., RF bands B1, B3, and B7). This mode requires the receive or transmit RF signal to pass multiple bandpass filters simultaneously, depending on the required band combination.

1A FIG. 10 is a block diagram of a conventional RF signal switching and filtering circuit. FIG 100 which can be used in a CA radio system. In the illustrated example, an antenna is 101 with a multi-way switch 102 coupled, which in turn with multiple RF band filters 104 is coupled. The returnable switch 102 can the antenna 101 optionally with the RF band filters 104 pair, one at a time or in selected combinations. The returnable switch 102 is typically implemented using field effect transistors (FETs) in a known manner. Some or all RF filters 104 are coupled to another RF circuit, such as a receiver, a transmitter, or a transceiver (not shown). In the illustrated example, band filters are 104 for three frequency bands B1 . B3 . B7 shown. In operation, the components RF band filter 104 (eg for the RF bands B1 . B3 . B7 ) with the multi-way switch 102 individually in a non-CA mode, or in combinations in a CA mode, are switched into the circuit.

For optimum performance, the impedance of each band filter must be 104 and of their desired combinations (eg B3 alone, B1 + B3 simultaneously, and B1 + B3 + B7 simultaneously) to the switch 102 and the antenna 101 be adapted, typically at a characteristic impedance of 50 ohms in modern radio circuits. 1B is a Smith chart 110 which determines the range of unadjusted impedance values for several exemplary combinations of three modeled filters for the in 1A shown configuration. In the example shown, considering only the B3 frequencies sampled over a frequency range of 1,810 GHz to 1,880 GHz in 10 MHz steps, the plot points (for B3 alone, additionally the effects when B1 or B1 + B7 to B3 may be added) that different values of impedance matching are needed to not only have a characteristic impedance of 50 ohms for each combination, but also for each frequency step. Accordingly, because of the impedance mismatch, the RF signal switching and filtering circuit is 100 no practical solution for a CA radio system.

If the number of combinations of bands Bn is small and the bands are separated far enough, the band filters can 104 combined in a single feed point (ie no switch 102 is necessary) using passive combining techniques such as "diplex" or "triplex" circuits which use carefully tuned, fixed matching networks to combine multiple filters and approximate the impedances. For example 2 a block diagram of a conventional RF triplexer filter circuit 200 , A set of filters 104 is with an antenna 101 are connected together by various fixed combinations of inductors Ln and capacitors Cn, which are adapted to the impedance of a respective filter 104 to the impedance of the antenna 101 for a specific frequency band (eg B1, B3, B7). All fixed matching switching elements must be designed to complement each other. However, such an architecture prevents the band combinations from changing selectively and is not practical for more than two or three bands.

To solve this problem with a small number of frequency bands, it is possible to passively combine separate groups of band filters (eg Group 1 = B1 + B3 + B7, Group 2 = B34 + B40, and Group 3 = B38) and then optionally to activate a corresponding, passively combined impedance matching circuit at a time using a single-pole multiple (SPnT) switch (eg SP3T). However, this approach is still not flexible enough and needs to be customized for each combination of frequency bands. Furthermore, because of the large number of possible combinations of such bands and due to overlapping or adjacent frequency ranges, it is impractical to use passive combining for a large number of frequency bands Bn.

Accordingly, there is a need for the ability to flexibly combine multiple frequency bands in an RF signal switching and filtering circuit that can be used in a CA radio system without degrading system performance. The present invention addresses this need.

SUMMARY OF THE INVENTION

The invention relates to a flexible multipath RF adaptive network switch architecture that counteracts impedance mismatch conditions resulting from various combinations of coupled RF bandpass filters.

In a first RF switch architecture, a digitally controlled tunable matching network is coupled to a multipath RF switch to provide adaptive impedance matching for various combinations of RF bandpass filters. Optionally, some or all of the RF bandpass filters also include an associated digitally-controlled filter pre-matching network to further improve impedance matching. In a preferred embodiment, the tunable matching network and optional filter pre-matching networks are integrated with a reusable RF switch on an integrated circuit (IC).

In a second RF switch architecture, some or all of the RF bandpass filters coupled to a multipath RF switch include a digitally controlled phasing network to provide the necessary per-band impedance matching. Optionally, a digitally controlled tunable matching network may also be included at the common terminal of the multipath RF switch to provide additional impedance matching capability. In a preferred embodiment, the phase matching networks and optional tunable matching networks are integrated with a multi-way RF switch in an IC.

The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Further features, objects and advantages of the invention will become apparent from the description and the drawings, as well as from the claims.

list of figures

• 1A Figure 10 is a block diagram of a conventional RF signal switching and filtering circuit that may be used in a CA radio system.
• 1B is a Smith chart showing the range of unmatched impedance values for several example combinations of three modeled filters for the in 1A shown configuration shows.
• 2 Fig. 10 is a block diagram of a conventional RF triplexer filter circuit.
• 3 FIG. 12 is a block diagram of one embodiment of an RF signal switching and filtering circuit including a tunable multi-way switch and optionally a filter array pre-adaptation network suitable for use in a CA radio system as well as in other applications.
• 4 Figure 4 is a block diagram of a generic tunable network adapter architecture.
• 5 FIG. 12 is a schematic diagram of a first embodiment of a tunable matching network. FIG.
• 6 FIG. 12 is a schematic diagram of a second embodiment of a tunable matching network. FIG.
• 7 FIG. 10 is a schematic diagram of a third embodiment of a tunable matching network. FIG.
• 8th Figure 4 is a schematic diagram of one embodiment of a tunable matching network of a digitally controlled FPM network.
• 9 Figure 10 is a block diagram showing a first embodiment of a dynamically reconfigurable tunable network adaptation topology.
• 10 Figure 10 is a block diagram showing a second embodiment of a dynamically reconfigurable tunable network adaptation topology.
• 11 FIG. 10 is a block diagram of one embodiment of an RF signal switching and filtering circuit including a multiway switch coupled to a set of two or more RF band filters via a series of corresponding phase matching networks.
• 12 FIG. 12 is a schematic diagram of one embodiment of a phase matching network suitable for use in the in 11 shown circuit is suitable.
• 13 FIG. 12 is a graph comparing the insertion loss versus the frequency of a combination of CA band filters (B1 + B3 + B7) for a simulation of the previously described in FIG 1A shown circuit for three frequency bands shows.
• 14 is a graph showing the insertion loss vs frequency for a simulation of the in 3 shown new circuit for the same configuration of CA band filters and frequency bands that in 13 are shown.

Like reference numerals and terms in the various drawings indicate like elements.

DETAILED DESCRIPTION OF THE INVENTION

The invention includes a flexible multipath RF adaptive network switch architecture that counteracts impedance mismatch conditions resulting from various combinations of coupled RF bandpass filters.

In a first RF switch architecture, a digitally controlled tunable matching network is coupled to a multipath RF switch to provide adaptive impedance matching for various combinations of RF bandpass filters. Optionally, some or all of the RF bandpass filters also include an associated digitally-controlled filter pre-matching network to further improve impedance matching. In a preferred embodiment, the tunable matching network and optional filter pre-matching networks are integrated with a reusable RF switch on an integrated circuit (IC).

In a second RF switch architecture, some or all RF bandpass filters coupled to a multipath RF switch include a digitally controlled phasing network to provide the necessary per-band impedance matching. Optionally, a digitally controlled tunable matching network may also be included at the common terminal of the multipath RF switch to provide additional impedance matching capability. In a preferred embodiment, the phase matching networks and an optional tunable matching network are integrated with a multi-way RF switch in an IC.

Tunable adaptation network architecture

Linking a set of RF band filters to a digitally controlled multipath RF switch allows any combination of switching paths (and thus signal switching paths) to be activated by direct assignment of control words to switching states. However, using a conventional design, activating multiple switching paths at the same time would result in large impedance mismatch, high insertion loss, and degraded return loss since each activated RF band filter will charge every other activated RF band filter. For example, if three adjacent RF bandpass filters each have an impedance of 50 ohms and are activated simultaneously, the total impedance would drop to approximately 17 ohms, causing some dB additional insertion loss (IL), and the filter response would be distorted. Such a mismatch could be reduced by adding some fixed amount phase shift or pre-match elements to each RF band filter path to reduce the impedance mismatch when combined, but this approach would require an individual design for each filter combination.

A more flexible architecture combines a tunable matching network (TMN) with a multipath RF switch to counteract impedance mismatching conditions that result from various combinations of coupled RF bandpass filters. This approach can be combined with a digitally controlled filter pre-matching network to further improve impedance matching.

3 FIG. 10 is a block diagram of one embodiment of an RF signal switching and filtering circuit. FIG 300 containing a tunable reusable switch 302 and optionally, a series of filter pre-adaptation networks 304 which are suitable both for CA radio systems and for other applications. The illustrated tunable reusable switch 302 contains a digitally controlled TMN 306 that with a TMN control circuit 308 which converts a binary control word (externally provided or internally generated) into switch control lines. The TMN 306 is with a reusable RF switching element 310 coupled, which is typically implemented by using known field effect transistors (FETs). A common terminal P _{C of} the tunable multi-way switch 302 can with an RF signal element, such as an antenna 101 be coupled. A number of a set of M signal terminals P1-Pm may be coupled to a plurality of corresponding RF elements, in particular to a set of RF band filters 104 , either individually or in combination with an antenna 101 can be coupled (in the illustrated embodiment, the RF band filters are 104 each shown with an associated band name Bn, which may or may not correspond to a terminal name Pm). In one embodiment, M = 10 and thus up to 10 ports may optionally be placed in the circuit, with common port P _C alone or in parallel combinations (eg, B1 alone, B1 + B3 at the same time, and B1 + B3 + Bn at the same time).

The RF band filter 104 are preferably bandpass filters having a very sharp passband (with respect to the passband-to-attenuator transition) typically implemented using a surface acoustic wave (SAW), bulk acoustic wave (BAW), or similar filter technology with sharp passbands. Also shown coupled between each RF band filter 104 and a corresponding terminal of the tunable multi-way switch 302 , are digitally controlled filter pre-adaptation networks 304 , which will be discussed in more detail below.

In operation, the RF band filter 104 (eg for frequency bands B1, B3, ... Bn) through the tunable multiway switch 302 individually in a non-CA mode, or in combinations in a CA mode, are switched into the circuit. For each RF band filter 104 combination, the TMN control circuit is used 308 the TMN 306 in a calibrated state to provide an appropriate impedance match for the selected combination. Subsequent TABLE 1 Figure 15 shows an example of a 3-bit control word defining 8 states mapped, for example, to specific active bands corresponding to some emerging industrial operating modes. TABLE 1 Status Binary state Active bands CA mode 0 0 0 0 no no 1 0 0 1 B3 Non-CA 2 0 1 0 B1 Non-CA 3 0 1 1 B3 and B1 2-Band CA Case 1 4 1 0 0 B7 Non-CA 5 1 0 1 B7 and B3 2 Band CA Case 3 6 1 1 0 B7 and B1 2 Band CA Case 2 7 1 1 1 B7, B3, and B1 3 Band CA

Although the TMN control circuit 308 external to the tunable reusable switch 302 shown, it can in conjunction with the tunable reusable switch 302 be made on the same IC. The TMN control circuit 308 can be configured to receive control words directly from an external source to the TMN 306 to set to a selected impedance match state (eg, based on a band combination selected by the user or an external circuit) via a digital interface, or control words may be provided indirectly via a look-up table (ie implemented as fuses, PROM, EEPROM, etc.), the tuning states for different RF band combinations or different control signals processed by a combinatorial circuit. Thus, the program control of the TMN control circuit 308 based on a user selection or an external control signal or automatically in response to detected system states or parameters [see blue highlight above] (eg, switch state, look-up values, detected signal frequency, signal strength, power consumption, IC device temperature, etc.)

For non-CA operation, the TMN 306 programmed to an impedance value that is the TMN 306 essentially almost invisible as a load. Alternatively, the TMN 306 include a bypass switch, described in more detail below, to the TMN 306 effectively remove from the signal path.

Tunable customization networks

Although the illustrated RF signal switching and filtering circuit 300 the TMN 306 in a preferred position on the common port P _{C of} the tunable multi-way switch 302 For example, TMN units may instead be coupled to one or more corresponding signal ports Pm; such "signal port side" TMN devices, while consuming more IC chip area, can provide even more accurate impedance matching control. In any case, a TMN 306 be connected in parallel or in series with the signal path and have a combination of parallel and / or series elements.

Every TMN 306 is configured to provide the required impedance matching ratio that is required, the impedance of a selected combination of RF bandpass filters 104 with respect to the load on the common port P _C while minimizing additional insertion loss. Every TMN 306 should have both a sufficiently wide tuning range and a sufficiently fine pitch step size to efficiently handle the various desired band filter combinations.

4 is a block diagram 400 a generic architecture for a tunable customization network 306 , In the illustrated example, there is a voting network 402 coupled along a signal path defined by IN and OUT terminals (in which case the circuit is symmetrical and therefore the terminal designations are arbitrary and reversible). An optional bypass switch 404 allowed the voting network 402 is switched out of the circuit when no impedance matching is desired, as may occur in non-CA mode. Optional switchable connections 406 allow the connection to other tuning elements (eg external inductors or tuning networks) or load elements (eg an antenna).

The customization network 402 is shown as a generic three terminal device and may be connected in series between the IN and OUT terminals, or may be internally configured to be shunted between the signal path and the circuit ground, or may be internally implemented as a combination of series and Shunt connections may be configured - eg, selectable between a series connection or shunt connection, or may have a more complex, dynamically reconfigurable topology (see further discussion below).

In more detail, a TMN 306 consist of one or more digitally tunable or switchable capacitors (DTCs) and / or digitally tunable or switchable inductors (DTLs) and / or digitally tunable transmission elements (TLEs), as well as microstrip or coplanar waveguides or bulk transmission line circuits. Several TMNs 306 can be used for more complicated cases. Examples of DTCs are in the U.S. Patent No. 9,024,700 , issued May 5, 2015, entitled "Method and Apparatus for Use in Digitally Tuning a Capacitor in an Integrated Circuit Device," and examples of DTLs are in the US Patent Application No. 13 / 595,893 , filed August 27, 2012, entitled "Method and Apparatus for Use in Tuning Reaction in an Integrated Circuit Device," both of which are assigned to the assignee of the present invention and incorporated by reference.

A number of useful TMN 306 designs may be used in conjunction with various embodiments of the invention. As an example shows 5 a schematic diagram 500 a first embodiment of a tunable matching network 306 , The essential adjustable impedance matching elements are a digitally adjustable capacitor element 502 (eg a DTC) and a digitally adjustable inductor element 504 (eg a DTL) coupled in series and shunted between the IN-OUT signal path and circuit ground. In an alternative embodiment, the adjustable inductor element 504 be replaced by a fixed inductor, leaving only the capacitor element 502 Adjustability offers. In an alternative embodiment, the adjustable capacitor element 502 be replaced by a fixed capacitor, leaving only the inductor element 504 Adjustability offers. In both cases, the digitally adjustable capacitor and / or inductor elements 502 . 504 be internal or external with respect to an IC. However, in a preferred embodiment, most or all components of the TMN 306 on the same IC as the tunable multiway switch 302 integrated.

In 5 Also shown are a switch S0 (eg, a FET) that can isolate the essential active tuning elements from the IN-OUT signal path, and two optional inductors L1, L2 that are selectively connected to the IN-OUT signal path by respective switches S1, S2 can be connected to the impedance matching range of the tunable matching network 306 to enlarge. It is understood that more or less than two optional inductors Ln may be included. In the illustrated embodiment, an optional bypass switch 404 shown, but the optional switchable connections 406 out 4 are omitted.

6 is a schematic diagram 600 a second embodiment of a tunable matching network 306 , The illustrated TMN 306 contains two digitally adjustable capacitor elements C1 . C2 , which are connected in series between the IN-OUT signal path and circuit ground, and a digitally adjustable inductor element L connected between circuit ground and a node between the two adjustable capacitor elements C1 . C2 is switched. As in 5 For example, one or more of the adjustable capacitor and / or inductor elements may be replaced by a fixed element as long as at least one adjustable impedance tuning element is left. For example, inductor element L may be fixed and all tuning done using one or both of the adjustable capacitor elements C1 . C2 , be achieved. The in 6 illustrated example circuit is particularly useful because it allows covering multiple points in a Smith chart (not just a curve), thereby providing a larger range of impedance match setting than some other embodiments.

7 is a schematic diagram 700 a third embodiment of a tunable matching network 306 , In the illustrated embodiment, a set of two or more LC circuits, each comprising a fixed capacitor Cn and a fixed inductor Ln, may be selectively connected to the IN-OUT signal path by respective switches Sn to provide a matching impedance value for the tunable one matching network 306 adjust. Thus, adjustability is made by selectively coupling one or more fixed-element LC circuits to the IN-OUT signal path under the control of a TMN control circuit 308 (as in 3 ) instead of using digitally adjustable impedance tuning elements such as a DTC or DTL. In an alternative embodiment, the LC circuits in 7 are replaced by a set of transmission line (TL) elements with varying impedance values under the control of the TMN control circuit 308 optionally coupled to the IN-OUT signal path.

Filtervoranpassungsnetzwerke

As with reference to 3 discussed above, optionally include some or all RF band filters 104 an associated digitally controlled filter pre-adaptation (FPM) network 304 to the impedance matching for the corresponding RF signal path to further improve. The FPM networks 304 are preferably configured to operate under the control of an FPM control circuit 312 optionally with the IN-OUT signal path of an associated RF bandpass filter 104 be connected as in 3 shown. The FPM control circuit 312 converts a binary control word (supplied externally or internally) to two switch control lines.

8th is a schematic diagram of an embodiment 800 a digitally controlled FPM network 304 , In the illustrated embodiment, an inductor L may be one for impedance matching of an associated RF bandpass filter 104 has a suitable inductance, via a switch S supplied by the FPM control circuit 312 optionally to the IN-OUT signal path of the associated RF bandpass filter 104 be switched. The switch S, when operating in some modes, such as a non-CA mode, allows isolation of the inductor L.

In an alternative embodiment, an FPM network 304 a digitally adjustable impedance tuning element (eg, a DTC or DTL) instead of the simple inductor L included. In appropriate applications can be an FPM network 304 essentially one of the above for the TMN 306 be described circuits or equivalent circuits.

The FPM networks 304 can be in a tunable reusable switch 302 be integrated or may be separate circuit elements that are between a tunable multi-way switch 302 and associated RF band filters 104 or in the associated RF band filters 104 be integrated.

Dynamically reconfigurable tunable adaptation network topology

As some of the exemplary embodiments in FIG 4 - 7 show that multiple switchable impedance tuning elements in various configurations provide a flexible solution to achieve reasonably wide coverage of a Smith chart with minimal adaptation loss while providing a low-loss bypass mode that can be activated when tuning is not required. However, in some applications it is difficult to achieve a sufficiently wide RF bandwidth without other performance penalties when using a tunable fixed topology matching network (eg, changeable DTCs and / or DTLs with optional fixed capacitor and inductor elements, but in a fixed topology ). Accordingly, a dynamically reconfigurable, tunable network topology allows real-time reconfiguration of a tunable adaptation network (TMN) topology to obtain better optimization of such parameters. A reconfigurable TMN topology uses multiple switchable elements (eg, a fixed and / or a tunable element in series with a switch) and tunable elements (eg, one or more variable DTCs or DTLS generally with an integrated switchable bypass path) to multiple configurations to reach.

9 is a block diagram illustrating a first embodiment 900 a dynamically reconfigurable, tunable adaptation network topology 306 shows. The illustrated example may be programmable or optionally configured in a pi-type, T-type or L-pad type topology in which one or more adjustable tuning elements ATE ₁ . ATE ₂ (eg DTCs and / or DTLs) in series with the IN-OUT signal path of the TMN 306 connectable while three or more adjustable tuning elements ATE ₃ . ATE ₄ . ATE ₅ as shown in a shunt configuration with circuit ground through appropriate shunt switches Sh _a . Sh _b . Sh _c are connected. Some or all of the adjustable tuning elements may include an integrated switchable bypass switch (not shown) that allows the element to be configured substantially as a short circuit connection. Additionally, many other topologies, such as a bridge T-type, may be configured using the same components or by adding other tunable tuning elements or other components.

A T-type topology can be configured by ATE ₁ and ATE ₂ are connected in series with the IN-OUT signal path, ATE ₄ shunted to the circuit ground (ie, switch Sh _b CLOSED), and ATE ₃ and ATE ₅ be decoupled (ie switch Sh _a and Sh _c OPEN). A pi-type topology can be configured in several ways: 1 ) Pair ATE ₁ in series with the IN-OUT signal path and ATE ₃ and ATE ₄ in shunt to circuit ground, while ATE ₂ is bypassed internally and ATE ₅ is decoupled; ( 2 ) Pair ATE ₂ in series with the IN-OUT signal path and ATE ₄ and ATE ₅ in shunt to circuit ground, while ATE ₁ is bypassed and ATE ₃ is decoupled; and ( 3 ) Pair ATE ₁ and ATE ₂ in series with the IN-OUT signal path and ATE ₃ and ATE ₅ in shunt to circuit ground, while ATE ₄ is decoupled. An L-pad type topology can be configured in one of several ways from one of the pi-type configurations by decoupling one of the two shunt ATEs.

9 also shows a bypass switch sb that allows the entire reconfigurable, tunable customization network 306 to work around, and further demonstrates that one or more optional fixed tuning elements RTD ₁ . RTD ₂ (eg, an internal or external inductor, capacitor, or transmission line element) from the circuit ground through associated shunt switches Sh ₁ . Sh ₂ on with the IN-OUT signal path of the TMN 306 can be coupled.

It is understood that some of the in 9 shown elements for certain applications can be omitted. For example, if only L-pad type and Pi-type topologies are needed, the elements needed for a T-type topology can be omitted.

10 is a block diagram illustrating a second embodiment 1000 a dynamically reconfigurable, tunable adaptation network topology 306 shows. In the illustrated example, there is an adjustable tuning element ATE ₁ and a fixed tuning element RTD ₁ in series with the IN-OUT signal path of the TMN 306 connectable. Two subcircuits, each with an adjustable tuning element ATE ₂ . ATE ₃ parallel to a corresponding fixed tuning element RTD ₁ . RTD ₂ to the circuit ground, are by appropriate shunt switch Sh _a . Sh _b connectable to the IN-OUT signal path. The illustrated embodiment may be configured as a Pi-type topology by using both shunt switches Sh _a . Sh _b be placed on CLOSED, and as an L-pad-type topology, placing one of the two shunt switches Sh _a . Sh _b on CLOSED and the other shunt switch of the pair is set to OPEN. A bypass switch Sb allows the entire reconfigurable, tunable matching network 306 is bypassed.

The topology and / or tuning values of the reconfigurable tunable matching networks 306 out 9 and 10 can be under the control of the TMN control circuit 308 out 3 programmatically in real time, or set to a particular configuration at the time of manufacture (eg, by "blowing" fusible links or by using an appropriately configured metallization mask when making an IC). Additionally, numerous other tunable matching network designs may be used in conjunction with the described RF signal switching and filtering circuits as long as these networks provide a suitable range of adjustability.

Phase matching network architecture

As described above, in a second RF switching architecture, some or all of the RF bandpass filters coupled to a multipath RF switch include a digitally controlled phasing network to provide the necessary per-band impedance matching.

11 FIG. 10 is a block diagram of one embodiment of an RF signal switching and filtering circuit. FIG 1100 that has a reusable switch 102 contains that with a set of two or more RF band filters 104 through a series of corresponding phase matching networks 1102 is coupled. The phase matching (PM) networks 1102 are with a PMN control circuit 1104 coupled, which converts a binary control word (externally provided or internally manufactured) into circuit control lines. A common terminal P _{C of} the tunable multi-way switch 102 can be connected to an RF signal element, such as an antenna 101 be coupled. As in the 3 the embodiment shown are the RF band filter 104 prefers bandpass filters with a very sharp pass band, and is typically implemented by using surface acoustic wave (SAW), bulk acoustic wave (BAW) or similar filter technology with sharp passbands.

Embodiments of the invention may include PM networks that include phase shifter circuits having two or more signal paths, such as multi-state phase shifters of the type disclosed in U.S. Patent Nos. 3,746,767, 4,729,866, and 5,648,866 U.S. Patent Application No. 15 / 017,433 , entitled "Low Loss Multi-State Phase Shifter" filed February 5, 2016 and assigned to the assignee of the present invention, which is hereby incorporated by reference. For example 12 a schematic diagram of an embodiment 1200 a multi-state phase matching (PM) network 1102 suitable for the in 11 shown circuit is suitable. In the illustrated example, the PM network has 1102 IN and OUT terminals connected by a plurality of n parallel circuit paths each having a pair of switches Sna and Snb and a corresponding phase shifter element. Simple phase shifter elements may include an inductor Ln, a capacitor Cn, a transmission line (not shown), or a THRU conductor (eg, a simple wire, or an IC or similar conductor) connected in series between the pairs of switches Sna-Snb is. It can also be more complex phase shifter elements, such as Common transmission line comprising one or more CLC units (ie, shunt C series L shunt C circuits). The phase shifter elements may be physically located on the same integrated circuit (IC) chip as the switch pairs Sna-Snb, or an IC may be configured with conductive pads to allow connection of external phase shifter elements to the switch pairs Sna-Snb. The order of the phase shifter elements is not important, but a developer may want to worry about minimizing the interaction of the components.

The switch pairs Sna-Snb in each of the parallel switching paths provide input / output symmetry and are simultaneously switched in a parallel switching path to allow the associated phase shifter element to be under the control of an applied signal from the PMN control circuit 1104 is placed in the circuit between the IN and OUT terminals. The switches Sn are typically implemented as FETs, in particular as MOSFETs. Each of the switches Sn is in a single-ended, single-ended (SPST) configuration and therefore can be implemented with a single FET device (however, to withstand applied signal voltages from exceeding the capacitance of a single FET, stacks of FET switches can be implemented) common control line signal to be simultaneously switched IN or OUT and therefore behave like a single high-voltage SPST switch). Furthermore, the pairs of switches Sna-Snb can be independently controlled so that two or more parallel switching paths between the IN and OUT terminals can be simultaneously switched into the circuit.

The illustrated PM network 1102 shows five parallel switching paths, as in TABLE 2 is shown. Although five parallel switching paths are shown, other embodiments may have more than five parallel switching paths (as indicated by the dashed lines in FIG 12 suggested). The PM network 1102 However, only three parallel switching paths (eg the switching paths 1 . 2 and 3 in TABLE 3 ), or even only two parallel switching paths (eg, if the THRU path is omitted in some embodiments, or if only one THRU path and one phase shift path are used). TABLE 2 switching path Parallel switching path components 1 S1a L1 S1b 2 S2a-S2b-C1 3 S3a THRU S3b 4 S4a-C 2 S 4 b 5 S5a L2 S5b

In operation, the components RF band filter 104 (eg for frequency bands B1, B3, ... Bn) through the tunable multiway switch 102 be switched into the circuit, individually in a non-CA mode, or in combinations in a CA mode. The PMN control circuit 1104 selects a specific phase shift setting for each PM network 1102 off to the impedance of the associated RF band filter 104 with respect to the applied load of the antenna 101 and every other RF band filter 104 which is switched into the circuit to adapt.

The phase adjustment networks 1102 can be configured with other adjustable phase shifter circuits, or optionally can be configured or programmed to provide a fixed phase shift for bands Bn that are only individually switched into the circuit (eg, when band B1 is used by itself and the adjustable phase shift from others Reasons is not needed, such as a reduction of intermodulation interference). In particular, at least one phase matching network 1102 a digitally controlled, tunable matching network (like the TMN 306 out 3 ), including a reconfigurable TMN. Optionally, a digitally controlled TMN 306 and a TMN control circuit 308 of the type as in 3 shown at the common terminal P _{C of} the multi-way RF switch to provide additional impedance matching capacity.

Comparative simulation data

13 is a graph 1300 comparing the insertion loss versus the frequency of a combination of CA band filters (B1 + B3 + B7) for a simulation of a conventional circuit, as in 1A shown for shows three frequency bands. 14 is a graph 1400 , which measures the insertion loss versus frequency for a simulation of the in 3 shown new circuit for the same configuration of CA band filters and the frequency bands in 13 are shown. Like the two graphs 1300 . 1400 show shows the new circuit of 3 an improvement of IL from about 1.5dB in the lower band (1.81 GHz to 1.88 GHz), about 3dB in the middle band (2.11 GHz to 2.18 GHz), and about 2dB in the high band (2.61 GHz to 2.69 GHz). A similar comparison (not shown) of a circuit simulation of the prior art and the simulation of the new circuit 3 for a different combination of CA band filters (B1 + B3) showed an improvement of IL of more than 1.5db in the middle band. In addition, the simulation of the new circuit showed off 3 an IL of less than 2dB (absolute, not comparable) for all non-CA modes.

As for RF performance, such improvements are significant and are made possible by the improved impedance matching provided by the flexible multi-way RF adaptive matching network switch architecture of the present invention.

method

• Bereitstellen eines abstimmbaren Mehrwegschalters, der (1) eine Vielzahl von Signalanschlüssen hat, von denen jeder dazu konfiguriert ist, an einen entsprechenden RF-Bandfilter und (2) einen gemeinsamen Anschluss gekoppelt zu werden;
• Konfigurieren des abstimmbaren Mehrwegschalters, um mindestens zwei ausgewählte Signalanschlüsse gleichzeitig in mindestens einem Betriebsmodus mit dem gemeinsamen Anschluss zu verbinden;
• Koppeln eines digital gesteuerten, abstimmbaren Anpassungsnetzwerks mit dem gemeinsamen Anschluss des abstimmbaren Mehrwegschalters; und
• selektives Steuern des abstimmbaren, digital gesteuerten Anpassungsnetzwerks, um Impedanzfehlanpassungszuständen entgegenzuwirken, die aus der gleichzeitigen Kopplung von mehr als einem ausgewählten RF-Bandfilter an den gemeinsamen Anschluss entstehen.
• Ein weiterer Aspekt der Erfindung umfasst ein Verfahren zum adaptiven Abstimmen eines Mehrweg-Radiofrequenz (RF)-Schalters, umfassend:
• Bereitstellen eines abstimmbaren Mehrwegschalters mit einem gemeinsamen Anschluss und einer Vielzahl von Signalanschlüssen;
• Konfigurieren des abstimmbaren Mehrwegschalters, um in mindestens einem Betriebsmodus mindestens zwei ausgewählte Signalanschlüsse gleichzeitig mit dem gemeinsamen Anschluss zu verbinden;
• Koppeln eines jeden einer Vielzahl von digital gesteuerten Phasenanpassungsnetzwerken mit einem entsprechenden Signalanschluss des abstimmbaren Mehrwegschalters;
• Konfigurieren jedes digital gesteuerten Phasenanpassungsnetzwerks, um mit einem entsprechenden RF-Bandfilter gekoppelt zu werden; und
• ausgewähltes Steuern jedes digital gesteuerten Phasenanpassungsnetzwerk, um Impedanzfehlanpassungszuständen entgegenzuwirken, die aus der gleichzeitigen Kopplung von mehr als einem ausgewählten RF-Bandfilter an den gemeinsamen Anschluss entstehen.

Another aspect of the invention includes a method for adaptively tuning a reusable radio frequency (RF) switch, comprising:

• Providing a tunable multi-way switch which ( 1 ) has a plurality of signal terminals, each of which is configured to connect to a corresponding RF band filter and ( 2 ) to be coupled to a common port;
• Configuring the tunable multi-way switch to simultaneously connect at least two selected signal terminals to the common terminal in at least one operating mode;
• Coupling a digitally controlled, tunable matching network to the common terminal of the tunable multiway switch; and
• selectively controlling the tunable digitally-controlled matching network to counteract impedance mismatch conditions resulting from the simultaneous coupling of more than one selected RF band filter to the common port.
• Another aspect of the invention includes a method of adaptively tuning a reusable radio frequency (RF) switch, comprising:
• Providing a tunable multi-way switch having a common terminal and a plurality of signal terminals;
• Configuring the tunable multi-way switch to simultaneously connect at least two selected signal terminals to the common terminal in at least one operating mode;
• Coupling each of a plurality of digitally controlled phase matching networks to a respective signal terminal of the tunable multiway switch;
• Configuring each digitally controlled phasing network to be coupled to a corresponding RF band filter; and
• selectively controlling each digitally controlled phase matching network to counter impedance mismatch conditions resulting from the simultaneous coupling of more than one selected RF bandpass filter to the common port.

Additional aspects of the methods described above include integrating the tunable multi-way switch and the digitally controlled tunable matching network on the same integrated circuit chip; coupling at least one filter pre-match network to a corresponding signal port of the tunable multi-way switch and configuring the at least one filter pre-match network to be coupled to a corresponding RF band filter; integrating the tunable multipath switch and the at least one filter bias network on the same integrated circuit chip; the digitally controlled tunable matching network including at least one digitally tunable capacitor and / or a digitally tunable inductor; the digitally controlled, tunable matching network which is reconfigurable between at least two types of topologies; coupling a signal terminal side digitally controlled tunable matching network to at least one respective signal terminal of the tunable multiway switch; coupling a plurality of RF band filters to respective signal terminals of the tunable multiway switch; integrating the tunable multiway switch and the plurality of digitally controlled phase matching networks on the same integrated circuit chip; at least one digitally controlled phase matching network which is a digitally controlled, tunable phase matching network; at least one digitally controlled phase matching network, including at least one digitally tunable capacitor and / or a digitally tunable inductor; at least one digitally controlled phase matching network that is reconfigurable between at least two types of topologies; coupling a digitally controlled, tunable matching network to the common terminal of the tunable multiway switch; and coupling a plurality of RF bandpass filters to corresponding digitally controlled phasing networks.

Configuration and control

The elements that work with the TMN networks 306 , FPM networks 304 and PM networks 1102 are not limited to the above described impedance matching elements (eg transmission line elements, fixed and adjustable capacitors, and fixed and adjustable inductors). Other elements can be connected for other applications. For example, an antenna bus may be connected to a tunable reusable switch so that it can be used for an opening vote.

Values for the tuning elements (e.g., fixed inductors or DTLs, fixed capacitors or DTCs, transmission line elements, and phase shifters) were chosen to optimize for special application requirements, impedance coverage compensation, bandwidth, insertion loss, transducer gain, and other limitations such as chip size. The set of available impedance values can be optimized based on subband or RF channel information for even better performance.

Each FET switch in the illustrated examples includes an associated control line (not shown) that allows the switch to be set in an ON (or CLOSED) conducting state or in an OFF (or OPEN) non-conducting or blocking state, and therefore behaves as a single-pole single switch. Furthermore, stacks of FET switches can be controlled by a common control line signal to switch ON or OFF simultaneously, and therefore the stack behaves like a single switch. Each control line may be coupled to other circuits (not shown in all cases), which may be internal or external. For example, control signals to the switch control lines may be provided by the well-known interfaces specified by the MIPI (Mobile Industry Processor Interface) Alliance, or the well-known Serial Peripheral Interface (SPI) bus, or by direct control signal pins, or appropriate other means are provided. Applied control signals may be coupled directly to associated FET switches, or may be processed by a combinatorial logic circuit or mapping circuit (eg, a look-up table) before being coupled to associated FET switches. In addition, the gate of each FET can be coupled to a driver circuit which generates a logic signal ( 1 . 0 ) is converted to a suitable driving voltage (eg + 3V, -3V).

Examples of FET stacks are in the U.S. Patent No. 7,248,120 issued July 24, 2007, entitled "Stacked Transistor Method and Apparatus"; U.S. Patent No. 7,008,971 issued on August 8, 2006, entitled "Integrated RF Front End"; and U.S. Patent No. 8,649,754 , issued February 11, 2014, entitled "Integrated RF Front End with Stacked Transistor Switch," assigned to the assignee of the present invention, which are hereby incorporated by reference.

Any RF signal switching and filtering circuit in accordance with the present invention may be tested by conventional testing means and packaged in a manner suitable for RF circuits, either alone or as part of a larger circuit or system.

uses

RF signal switching and filtering circuits in accordance with the present invention are useful in a wide variety of applications, including radar systems (including phased array and automotive radar systems) and radio systems. Use in a radio system includes, again without limitation, cellular radio systems (including base stations, relay stations, and hand-held transceivers) that use standards such as Code Division Multiple Access ("CDMA"), Wide Band Code Division Multiple Access ("W-CDMA"). ), Global Interoperability for Microwave Access ("WIMAX"), Global System for Mobile Communications ("GSM"), Enhanced Data Rates for GSM Evolution (EDGE), Long Term Evolution ("LTE"), as well as other wireless communication standards and protocols ,

Manufacturing technologies and options

The term "MOSFET" generally refers to metal oxide semiconductors; Another synonym for MOSFET is "MISFET", for metal insulator FET. However, "MOSFET" has become a common name for most types of insulated gate FETs ("IGFETs"). Nevertheless, it is well known that the term "metal" in the names MOSFET and MISFET is now often a misnomer because the previous metallic material of the gate is often a layer of polysilicon (polycrystalline silicon). Likewise, the "oxide" in the name of MOSFET can be a misnomer because different dielectric materials are used, with the aim of obtaining strong channels with smaller applied voltages. Accordingly, as used herein, the term "MOSFET" is not to be understood as literally limited to metal oxide semiconductors, but instead includes IGFETs in general.

As would be readily apparent to one skilled in the art, various embodiments of the invention may be implemented to meet a wide variety of specifications. Unless otherwise stated above, selection of suitable component values is a matter of design choice, and various embodiments of the invention may be implemented in any suitable IC technology (including but not limited to MOSFET and IGFET structures) or in hybrid or discrete switching forms , Integrated circuit designs can be fabricated using any suitable substrates and processes, including but not limited to standard bulk silicon, silicon-on-insulator (SOI), silicon-on-sapphire (SOS), GaAs pHEMT , and MESFET technologies. However, the inventive concepts described above are particularly useful with an SOI based manufacturing process (including SOS), and with manufacturing processes that have similar characteristics. Manufacture in CMOS on SOI or SOS enables low power consumption, the ability to withstand high performance signals during operation due to FET stacking, good linearity, and high frequency operation (above about 1 GHz, and more specifically above about 2 GHz). Monolithic IC implementation is particularly useful because parasitic capacitances can generally be minimized by careful design.

Voltage levels may be adjusted and / or logical signal polarities reversed, depending on a particular specification and / or implementation technology (e.g., NMOS, PMOS or CMOS, and gain mode or fatigue mode transistor devices). Component voltage, current, and power handling resources may be adjusted as needed, for example, by adjusting device sizes, serially "stacking" components (particularly SOI FETs) to withstand higher voltages, and / or using multiple components in parallel to handle larger currents. Additional circuit components may be added to enhance the capabilities of the circuits shown and / or to provide additional functionality without significantly changing the functionality of the circuits shown.

In order to improve linearity and other performance characteristics, especially when using an SOI based manufacturing process (including SOS), it may be particularly useful to use FETs according to the teachings in the U.S. Patent No. 7,910,993 issued March 22, 2011, entitled "Method and Apparatus for Improving Linearity of MOSFETs Using an Accumulated Charge Sink"; and U.S. Patent No. 8,742,502 , issued June 3, 2014, entitled "Method and Apparatus for Improving Linearity of MOSFETs Using Accumulated Charge Sink", assigned to the assignee of the present invention and incorporated herein by reference ,

A number of embodiments of the invention have been described. It is understood that various modifications can be made without departing from the spirit and scope of the invention. For example, some of the steps described above may be independent in order and thus may be performed in a different order than described. Furthermore, some of the steps described above may be optional. Various activities described in relation to the methods shown above may be performed repeatedly, in serial or parallel fashion. It should be understood that the foregoing description is intended to illustrate the invention, but is not intended to limit the scope of the invention, which is defined by the scope of the following claims, and that other embodiments are within the scope of the claims.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• US 9024700 [0030]
• US 13/595893 [0030]
• US 15017433 [0048]
• US 7248120 [0060]
• US 7008971 [0060]
• US 8649754 [0060]
• US 7910993 [0066]
• US 8742502 [0066]

Claims (42)

IT IS REQUESTED: A reusable radio frequency (RF) adaptive tuning network switch architecture comprising: (a) a tunable multiway switch having (1) a plurality of signal terminals each configured to be coupled to a respective RF band filter and (2) a common terminal, the tunable multiway switch configured to be at least two in at least one operating mode connect selected signal terminals simultaneously to the common terminal; and (b) a digitally controlled tunable matching network coupled to the common terminal of the tunable multiway switch and selectively controlled to counter impedance mismatch conditions resulting from the simultaneous coupling of more than one selected RF bandpass filter to the common terminal. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 1 in which the tunable multi-way switch and the digitally controlled tunable matching network are integrated on the same circuit chip. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 1 further comprising at least one filter pre-match network coupled to a respective signal port of the tunable multi-way switch and configured to be coupled to a corresponding RF bandpass filter. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 3 in which the tunable multi-way switch and the at least one filter pre-matching network are integrated on the same circuit chip. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 1 in which the digitally controlled, tunable matching network comprises at least one digitally tunable capacitor and / or a digitally tunable inductor. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 1 in which the digitally controlled, tunable matching network is reconfigurable between at least two types of topologies. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 1 in which at least one signal terminal of the tunable multiway switch has a corresponding signal terminal side, digitally controlled, tunable matching network. A reusable radio frequency (RF) adaptive tuning network switch architecture comprising: (a) a tunable multiway switch having a common terminal and a plurality of signal terminals, the tunable multiway switch configured to simultaneously connect at least two selected signal terminals to the common terminal in at least one operating mode; and (b) a plurality of digitally controlled phasing networks, each coupled to a respective signal port of the tunable multiway switch and configured to be coupled to a corresponding RF bandpass filter, each digitally controlled phasing network being selectively controlled to counteract impedance mismatching conditions resulting from the concurrent Coupling more than one selected RF band filter to the common port. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 8 in which the tunable multi-way switch and the plurality of digitally controlled phase matching networks are integrated on the same integrated circuit chip. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 8 in which at least one digitally controlled phase matching network is a digitally controlled, tunable matching network. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 8 in which at least one digitally controlled phase matching network comprises at least one digitally tunable capacitor and / or a digitally tunable inductor. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 8 in which at least one digitally controlled phase matching network is reconfigurable between at least two types of topologies. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 8 , which further comprises a digitally controlled, tunable matching network coupled to the common terminal of the tunable multi-way switch. A reusable radio frequency (RF) adaptive tuning network switch architecture comprising: (a) a tunable multiway switch having a common terminal and a plurality of signal terminals, and configured to simultaneously connect at least two selected signal terminals to the common terminal in at least one operating mode; (b) a plurality of RF bandpass filters coupled to respective signal terminals of the tunable multiway switch; and (c) a digitally controlled tunable matching network coupled to the common terminal of the tunable multiway switch and selectively controlled to counter impedance mismatch conditions resulting from at least one combination of at least two selected RF band filters connected to common terminal simultaneously. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 14 in which the tunable multi-way switch and the digitally controlled, tunable matching network are integrated on the same integrated circuit chip. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 14 which further comprises at least one filter bias network coupled to a respective signal port of the tunable multi-way switch and configured to be coupled to a corresponding RF bandpass filter. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 16 in which the tunable multi-way switch and the at least one filter pre-matching network are integrated on the same integrated circuit chip. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 14 in which the digitally controlled, tunable matching network comprises at least one digitally tunable capacitor and / or a digitally tunable inductor. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 14 in which the digitally controlled, tunable matching network is reconfigurable between at least two types of topologies. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 14 in which at least one signal terminal of the tunable multiway switch has a corresponding signal terminal side, digitally controlled, tunable matching network. A reusable radio frequency (RF) adaptive tuning network switch architecture comprising: (a) a tunable multi-way switch having a common terminal and a plurality of signal terminals, and configured to simultaneously connect at least two selected signal terminals to the common terminal in at least one operating mode; (b) a plurality of RF bandpass filters coupled to respective signal terminals of the tunable multiway switch; and (c) a plurality of digitally controlled phase matching networks coupled to respective RF band filters and selectively controlled to counter impedance mismatch conditions resulting from at least one combination of at least two selected RF band filters connected to the common port simultaneously. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 21 in which the tunable multiway switch and the plurality of digitally controlled phasing networks are integrated on the same integrated circuit chip. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 21 in which at least one digitally controlled phase matching network is a tunable, digitally controlled matching network. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 21 in which at least one digitally controlled phase matching network comprises at least one digitally tunable capacitor and / or a digitally tunable inductor. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 21 in which at least one digitally controlled phase matching network is reconfigurable between at least two types of topologies. The multipath Radio Frequency (RF) adaptive tuning network switch architecture according to Claim 21 , which further comprises a digitally controlled, tunable matching network coupled to the common terminal of the tunable multi-way switch. A method of adaptively adapting a multipath radio frequency (RF) switch, comprising: (a) providing a tunable multi-way switch having (1) a plurality of signal terminals each configured to be coupled to a respective RF band filter and (2) a common terminal; (b) configuring the tunable multi-way switch to simultaneously connect at least two selected signal terminals to the common terminal in at least one operating mode; (c) coupling a digitally controlled, tunable matching network to the common terminal of the tunable multiway switch; and (d) selectively controlling the digitally controlled tunable matching network to counteract impedance mismatching conditions resulting from the simultaneous coupling of more than one RF bandpass filter to the common port. The procedure according to Claim 27 further comprising integrating the tunable multi-way switch and the digitally controlled tunable matching network on the same integrated circuit chip. The procedure according to Claim 27 further comprising coupling at least one filter pre-match network to a respective signal port of the tunable multi-way switch and configuring the at least one filter pre-match network to couple it to a corresponding RF band filter. The procedure according to Claim 29 which further comprises integrating the tunable multi-way switch and the at least one filter pre-match network on the same integrated circuit chip. The procedure according to Claim 27 in which the digitally controlled tunable matching network comprises at least one digitally tunable capacitor and / or a digitally tunable inductor. The procedure according to Claim 27 in which the digitally controlled, tunable matching network is reconfigurable between at least two types of topologies. The procedure according to Claim 27 which further comprises coupling a signal terminal side digitally controlled tunable matching network to at least one corresponding signal terminal of the tunable multiway switch. The procedure according to Claim 27 which further comprises coupling a plurality of RF band filters to respective signal terminals of the tunable multi-way switch. A method for adaptively tuning a reusable radio frequency (RF) switch, comprising: (a) providing a tunable multi-way switch having a common terminal and a plurality of signal terminals; (b) configuring the tunable multi-way switch to simultaneously connect at least two selected signal terminals to the common terminal in at least one operating mode; (c) coupling each of a plurality of digitally controlled phase matching networks to a respective signal terminal of the tunable multiway switch; (d) configuring each digitally controlled phasing network to be coupled to a corresponding RF bandpass filter; and (e) selectively controlling each digitally controlled phasing network to counteract impedance mismatching conditions that result from the simultaneous coupling of more than one selected RF bandpass filter to the common port. The procedure according to Claim 35 which further comprises integrating the tunable multi-way switch and the plurality of digitally controlled phase matching networks on the same integrated circuit chip. The procedure according to Claim 35 in which at least one digitally controlled phase matching network is a controlled, tunable matching network. The procedure according to Claim 35 in which at least one digitally controlled phase matching network comprises at least one digitally tunable capacitor and / or a digitally tunable inductor. The procedure according to Claim 35 in which at least one digitally controlled phase matching network is reconfigurable between at least two types of topologies. The procedure according to Claim 35 which further comprises coupling a digitally controlled tunable matching network to the common terminal of the tunable multi-way switch. The procedure according to Claim 35 which further comprises coupling a plurality of RF band filters to corresponding digitally controlled phasing networks.

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