DE112012001788A5 - switch arrangement - Google Patents
switch arrangement Download PDFInfo
- Publication number
- DE112012001788A5 DE112012001788A5 DE112012001788.9T DE112012001788T DE112012001788A5 DE 112012001788 A5 DE112012001788 A5 DE 112012001788A5 DE 112012001788 T DE112012001788 T DE 112012001788T DE 112012001788 A5 DE112012001788 A5 DE 112012001788A5
- Authority
- DE
- Germany
- Prior art keywords
- switch arrangement
- switch
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11163018.2 | 2011-04-19 | ||
EP11163018 | 2011-04-19 | ||
PCT/EP2012/056986 WO2012143347A1 (en) | 2011-04-19 | 2012-04-17 | Switch assembly |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112012001788A5 true DE112012001788A5 (en) | 2014-01-23 |
DE112012001788B4 DE112012001788B4 (en) | 2016-05-04 |
Family
ID=44357964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112012001788.9T Active DE112012001788B4 (en) | 2011-04-19 | 2012-04-17 | switch arrangement |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE112012001788B4 (en) |
WO (1) | WO2012143347A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8710541B2 (en) | 2012-03-20 | 2014-04-29 | Analog Devices, Inc. | Bi-directional switch using series connected N-type MOS devices in parallel with series connected P-type MOS devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105447B2 (en) | 1988-12-15 | 1995-11-13 | 株式会社東芝 | Transmission gate |
US5465054A (en) | 1994-04-08 | 1995-11-07 | Vivid Semiconductor, Inc. | High voltage CMOS logic using low voltage CMOS process |
EP0698966B1 (en) | 1994-07-29 | 1998-10-07 | STMicroelectronics S.r.l. | MOS transistor switch without body effect |
US5789781A (en) | 1995-02-27 | 1998-08-04 | Alliedsignal Inc. | Silicon-on-insulator (SOI) semiconductor device and method of making the same |
US6163199A (en) | 1999-01-29 | 2000-12-19 | Fairchild Semiconductor Corp. | Overvoltage/undervoltage tolerant transfer gate |
US7924085B2 (en) * | 2009-06-19 | 2011-04-12 | Stmicroelectronics Asia Pacific Pte. Ltd. | Negative analog switch design |
-
2012
- 2012-04-17 WO PCT/EP2012/056986 patent/WO2012143347A1/en active Application Filing
- 2012-04-17 DE DE112012001788.9T patent/DE112012001788B4/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE112012001788B4 (en) | 2016-05-04 |
WO2012143347A1 (en) | 2012-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed |
Effective date: 20131130 |
|
R082 | Change of representative |
Representative=s name: VON KREISLER SELTING WERNER - PARTNERSCHAFT VO, DE |
|
R081 | Change of applicant/patentee |
Owner name: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, DE Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AG, 44227 DORTMUND, DE Effective date: 20141217 |
|
R082 | Change of representative |
Representative=s name: VON KREISLER SELTING WERNER - PARTNERSCHAFT VO, DE Effective date: 20141217 Representative=s name: DOMPATENT VON KREISLER SELTING WERNER - PARTNE, DE Effective date: 20141217 |
|
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R130 | Divisional application to |
Ref document number: 112012007287 Country of ref document: DE |
|
R020 | Patent grant now final | ||
R081 | Change of applicant/patentee |
Owner name: ELMOS SEMICONDUCTOR SE, DE Free format text: FORMER OWNER: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT, 44227 DORTMUND, DE |
|
R082 | Change of representative |
Representative=s name: DOMPATENT VON KREISLER SELTING WERNER - PARTNE, DE |