DE112012001788A5 - switch arrangement - Google Patents

switch arrangement Download PDF

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Publication number
DE112012001788A5
DE112012001788A5 DE112012001788.9T DE112012001788T DE112012001788A5 DE 112012001788 A5 DE112012001788 A5 DE 112012001788A5 DE 112012001788 T DE112012001788 T DE 112012001788T DE 112012001788 A5 DE112012001788 A5 DE 112012001788A5
Authority
DE
Germany
Prior art keywords
switch arrangement
switch
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112012001788.9T
Other languages
German (de)
Other versions
DE112012001788B4 (en
Inventor
Dmitri Gubanov
Anatoli Grigoriev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elmos Semiconductor SE
Original Assignee
Elmos Semiconductor SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elmos Semiconductor SE filed Critical Elmos Semiconductor SE
Publication of DE112012001788A5 publication Critical patent/DE112012001788A5/en
Application granted granted Critical
Publication of DE112012001788B4 publication Critical patent/DE112012001788B4/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
DE112012001788.9T 2011-04-19 2012-04-17 switch arrangement Active DE112012001788B4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11163018.2 2011-04-19
EP11163018 2011-04-19
PCT/EP2012/056986 WO2012143347A1 (en) 2011-04-19 2012-04-17 Switch assembly

Publications (2)

Publication Number Publication Date
DE112012001788A5 true DE112012001788A5 (en) 2014-01-23
DE112012001788B4 DE112012001788B4 (en) 2016-05-04

Family

ID=44357964

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012001788.9T Active DE112012001788B4 (en) 2011-04-19 2012-04-17 switch arrangement

Country Status (2)

Country Link
DE (1) DE112012001788B4 (en)
WO (1) WO2012143347A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8710541B2 (en) 2012-03-20 2014-04-29 Analog Devices, Inc. Bi-directional switch using series connected N-type MOS devices in parallel with series connected P-type MOS devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105447B2 (en) 1988-12-15 1995-11-13 株式会社東芝 Transmission gate
US5465054A (en) 1994-04-08 1995-11-07 Vivid Semiconductor, Inc. High voltage CMOS logic using low voltage CMOS process
EP0698966B1 (en) 1994-07-29 1998-10-07 STMicroelectronics S.r.l. MOS transistor switch without body effect
US5789781A (en) 1995-02-27 1998-08-04 Alliedsignal Inc. Silicon-on-insulator (SOI) semiconductor device and method of making the same
US6163199A (en) 1999-01-29 2000-12-19 Fairchild Semiconductor Corp. Overvoltage/undervoltage tolerant transfer gate
US7924085B2 (en) * 2009-06-19 2011-04-12 Stmicroelectronics Asia Pacific Pte. Ltd. Negative analog switch design

Also Published As

Publication number Publication date
DE112012001788B4 (en) 2016-05-04
WO2012143347A1 (en) 2012-10-26

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