DE112007003634A5 - Method for reducing macrodefects in the production of single crystals or monocrystalline layers - Google Patents

Method for reducing macrodefects in the production of single crystals or monocrystalline layers Download PDF

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Publication number
DE112007003634A5
DE112007003634A5 DE112007003634T DE112007003634T DE112007003634A5 DE 112007003634 A5 DE112007003634 A5 DE 112007003634A5 DE 112007003634 T DE112007003634 T DE 112007003634T DE 112007003634 T DE112007003634 T DE 112007003634T DE 112007003634 A5 DE112007003634 A5 DE 112007003634A5
Authority
DE
Germany
Prior art keywords
macrodefects
reducing
production
single crystals
monocrystalline layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112007003634T
Other languages
German (de)
Other versions
DE112007003634B4 (en
Inventor
Stephan Dipl.-Ing. Hussy
Jochen Dr. Friedrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of DE112007003634A5 publication Critical patent/DE112007003634A5/en
Application granted granted Critical
Publication of DE112007003634B4 publication Critical patent/DE112007003634B4/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
DE112007003634.6T 2007-10-23 2007-10-23 Method for reducing macrodefects in the production of single crystals or monocrystalline layers Expired - Fee Related DE112007003634B4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2007/001902 WO2009052770A1 (en) 2007-10-23 2007-10-23 Method for reducing macrodefects in the production of single-crystal or monocrystalline layers

Publications (2)

Publication Number Publication Date
DE112007003634A5 true DE112007003634A5 (en) 2010-05-27
DE112007003634B4 DE112007003634B4 (en) 2018-05-09

Family

ID=39566242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112007003634.6T Expired - Fee Related DE112007003634B4 (en) 2007-10-23 2007-10-23 Method for reducing macrodefects in the production of single crystals or monocrystalline layers

Country Status (2)

Country Link
DE (1) DE112007003634B4 (en)
WO (1) WO2009052770A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
DE102004048454B4 (en) * 2004-10-05 2008-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for the preparation of Group III nitride bulk crystals or crystal layers from molten metal
DE102004048453A1 (en) * 2004-10-05 2006-04-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. A method of increasing the conversion of Group III metal to Group III nitride in a Group III-containing molten metal

Also Published As

Publication number Publication date
DE112007003634B4 (en) 2018-05-09
WO2009052770A1 (en) 2009-04-30

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