DE112006003519T5 - Method and apparatus for downstream gas dissociation - Google Patents

Abstract

System for exciting gases, comprising:
a remote plasma source for generating a plasma region in a chamber, wherein the plasma generates an activated gas;
a supply source for introducing a downstream gas to interact with the activated gas outside the plasma region, wherein the activated gas promotes excitation of the downstream gas and wherein the downstream excited gas does not significantly interact with an interior surface of the chamber; and
a feature for providing a gap between an outlet flange of the chamber and the supply source.

Description

FIELD OF THE INVENTION

The The present invention relates to a method and an apparatus for gas activation. In particular, the invention relates to a Method and apparatus for generating dissociated gases and device for and method of processing dissociated materials Gases.

BACKGROUND OF THE INVENTION

plasmas become common used to activate gases, which in an excited Condition are added so that the gases have an increased reactivity. The excitation of a gas involves the energy state of the gas to increase. In some cases the gases are excited to produce the dissociated gases, containing ions, free radicals, atoms and molecules. Dissociated gases are used in numerous industrial and scientific applications including Processing solid materials such as semiconductor wafers, powders, and other gases used. The parameters of the dissociated gas and the conditions of exposure of the dissociated gas to the Machining material varies widely depending on the application. Around In a plasma to cause gas dissociation sometimes becomes big quantity needed by energy.

Plasma sources generate plasmas by z. B. applying an electric potential of sufficient magnitude to a plasma gas (e.g., O ₂ , N ₂ , Ar, NF ₃ , H _2, and He), or a mixture of gases to ionize at least a portion of the gas. Plasmas can be generated in several ways, including DC discharge, high frequency discharge (RF) and microwave discharge. DC discharge plasmas are obtained by applying a potential between two electrodes in a plasma gas. RF discharge plasmas are obtained by either electrostatic or inductive coupling of energy from an energy source into a plasma. Microwave discharge plasmas are obtained by direct coupling of microwave energy through a microwave transmissive window in a discharge chamber containing a plasma gas. Plasmas are usually kept in chambers made of metallic materials such as aluminum or dielectric materials such as quartz.

There are applications where an activated gas may not be compatible with the plasma source. If you leave z. For example, during semiconductor fabrication, atomic oxygen reacts with a photoresist to remove photoresist from a semiconductor wafer by converting the photoresist into volatile CO ₂ and H ₂ O by-products. Atomic oxygen is usually produced by dissociating O ₂ (or a gas containing oxygen) with a plasma in a plasma chamber of a plasma source. The plasma chamber is usually made of quartz because of the low surface recombination rate of atomic oxygen with quartz. Atomic fluorine is often used in conjunction with atomic oxygen because atomic fluorine accelerates the photoresist removal process. Fluorine is, for. B. obtained by dissociation of NF ₃ or CF ₄ with the plasma in the plasma chamber. However, fluorine is highly corrosive and can be detrimental to quartz compartments. Under similar operating conditions, the use of a fluorine compatible chamber material (eg, sapphire or aluminum nitride) reduces the efficiency of atomic oxygen production and increases processing costs because fluorine compatible materials are usually more costly than quartz.

Another application in which an activated gas is incompatible with a plasma chamber material involves a plasma containing hydrogen located within a quartz chamber. Excited hydrogen atoms and molecules can react with the quartz (SiO ₂₎ to convert the quartz in silicon. Changes in the material composition of the chamber can, for. B. lead to undesirable deviation of the processing parameters and also in the particle formation. In other applications, the quartz can be converted to Si ₃ N ₄ if the nitrogen is present in the plasma chamber during processing.

Accordingly There is a need for effective gas dissociation with a plasma in a way, the unfavorable Minimizes effects of the dissociated gas on the plasma chamber become.

SUMMARY OF THE INVENTION

The This invention relates in one aspect to a method of activation and dissociating gases. The method involves an activated gas with a plasma in a chamber. The procedure includes also, a downstrearn gas inlet with respect to an outlet of the Arrange plasma chamber to allow the activated gas to the dissociation of a downstream gas, or a gas in the Strömabwärtsbereich, which is introduced through the downstrearn gas inlet, whereby the dissociated downstream gas does not significantly interfere with an inner surface of the Plasma chamber interacts.

In some embodiments, the plasma may be generated by a remote plasma source become. The remote plasma source can, for. An RF plasma generator, a microwave plasma generator or a DC plasma generator. The plasma can z. B. from oxygen, nitrogen, helium or argon can be generated. The downstream gas may comprise a gas containing a halogen or a halide (eg, NF ₃ , CF ₄ , CHF ₃ , C ₂ F ₆ , C ₂ HF ₅ , C ₃ F ₈ , C ₄ F ₈ , XeF ₂ , Cl ₂ or ClF ₃ ). The downstream gas may contain fluorine. An inner surface of the chamber may, for. Quartz material, sapphire material, alumina, aluminum nitride, yttria, silicon carbide, boron nitride or metal such as aluminum, nickel or stainless steel. An inner surface of the chamber may, for. A coated metal (eg, anodized aluminum). In some embodiments, alternative gases may be used as the downstream gas, e.g. B., H _2, O _2, N _2, Ar, H ₂ O, and ammonia can be used. In some embodiments, the downstream gas includes one or more gases containing metallic materials or semiconductor materials to prevent the z. B. to deposit on a substrate. The metallic materials or semiconductor materials may, for. B., Si, G _E , Ga, In, A _S , Sb, Ta, W, M _O , Ti, H _f , Zr, Cu, Sr or Al included. In some embodiments, the downstream gas receives one or more gases containing metallic or semiconductor materials, or oxides or nitrides containing metallic materials or semiconductor materials. In some embodiments, the downstream gas includes hydrocarbon materials.

The Downstream gas can enter the chamber at a variety of positions introduced become. In some embodiments can the downstream gas at a position relative to the outlet the chamber was introduced be the interaction between the dissociated downstream gas and the inner surface the chamber minimized. The downstream gas may be at one position be introduced with respect to the outlet of the chamber, indicating the degree to which the downstream gas dissociates is maximized. The downstream gas can be introduced at a position relative to the outlet of the chamber, which is the degree to which the dissociated downstream gas interacts with the inner surface the chamber interacts with the degree to which the downstream gas dissociates. The dissociated downstream gas can be used to etch or Clean from or to deposit on a substrate.

Around the surface continue to protect the plasma chamber, may have a lock (eg, shield or interlayer) near the outlet the plasma chamber and the downstream gas inlet are introduced. The barrier may consist of a material that reacts with the reactive Gases is chemically compatible. In some embodiments, the lock is removable, which allows periodic swapping. The lock can be formed from a material that is resistant to the reactive gases essentially resistant is. The lock can z. B. consist of a sapphire material or have this, which is located at the outlet of the plasma chamber. The barrier may be partially placed within the plasma chamber.

In some embodiments the barrier may be a ceramic and / or glass material (eg, sapphire, Quartz, alumina, aluminum nitride, yttrium oxide, silicon carbide or Boron nitride) or have this. The lock can also off be formed of a material which has a low surface recombination or reaction rate with the dissociated downstream gases, so that the transport efficiency of the dissociated gases to the substrate can be improved. Materials with low recombination properties shut down, z. Quartz, diamonds, diarasant-like-carbon, hydrocarbon-based Materials and fluorocarbon-based materials. The barrier Can be made of a metal such as aluminum, nickel or stainless steel be. The type of metal can be chosen according to desired mechanical and thermal Properties of the metal chosen be.

The surface The barrier (eg, shield or interlayer) may be covered with a layer lower of chemically compatible materials or materials Surface recombination / reaction be coated. The barrier can also be made of a material be that reacts with the dissociated downstream gas. In some embodiments is z. For example, a lock that is slowly consumed is actually desirable, since they are accumulating Contamination or particles can be avoided. The lock can be partial be placed inside the plasma chamber. To adverse interaction between the dissociated downstream gas and the plasma chamber too can reduce, additional cleaning gas be introduced between the outlet of the plasma chamber and the downstream gas supply inlet.

The Method may also include a property (eg, one or more) several of pressure, flow rate and distance from the outlet of the chamber), the Supply of downstream gas to specify dissociation of the Optimize downstream gas. The method may also include a property (eg one or more of pressure, flow rate, type of the gas, gas composition and the energy supplied to the plasma) of the plasma gas to dissociation of the downstream gas to optimize.

In another aspect, the invention relates to a method for activating and dissociating gases, which includes an activated gas to generate a plasma in a chamber. The method also includes introducing a downstream gas into the activated gas outside the chamber at a position sufficiently close to an outlet of the chamber such that the activated gas has a sufficient energy level to cause excitation (eg, dissociation) of the downstream gas. To promote gas. The position is at a sufficient distance from the outlet of the chamber so that the excited downstream gas does not substantially interact with an interior surface of the chamber.

In In another aspect, the invention relates to a method for etching of photoresist. The method involves using an activated gas to produce a plasma that is in a chamber. The Method also includes a downstream gas with at least one Combine part of the activated gas so that the activated Gas contains a sufficient energy level to stimulate (eg dissociation) of the downstream gas and that the stimulated downstream gas is not significant with a inner surface the chamber interacts. The method also includes a substrate to etch with the dissociated downstream gas. The procedure can also involve a surface to clean with the dissociated downstream gas. The procedure can also used to deposit materials on a substrate. The process can also be used to produce powder.

In In another aspect, the invention relates to a method for activating and dissociating gases. The procedure involves to generate an activated gas with a plasma in a chamber. The process also includes a downstream gas outside of the plasma area, to interact with the activated gas and activate it To allow gas Stimulate excitation (eg dissociation) of the downstream gas, wherein the excited gas does not significantly interfere with an inner surface of the Chamber interacts.

In an embodiment the invention features a system for activating and dissociating Gases on. The system has a plasma source for generating a Plasmas in a chamber, wherein the plasma is an activated gas generated. The system also has means for combining at least a portion of the activated gas with a downstream gas to it to enable the activated gas Promote excitation (eg dissociation) of the downstream gas, wherein the excited downstream gas does not significantly interfere with an interior surface of the Chamber interacts. In some embodiments enable the interactions between the activated gas and the downstream gas an ionization of the downstream gas. The transmission of energy from z. B. the activated gas on the downstream gas increases the chemical Reactivity of the downstream gas.

The invention relates in another aspect to an apparatus and a method for dissociating halogen-containing gases (eg. B. NF _3, CHF ₃ and CF ₄₎ (with an activated plasma gas at a position downstream of a plasma chamber without significant interaction z. B. erosion) of the halogens with the walls of the plasma chamber.

The Invention, in another embodiment, has a system for activating and dissociating gases. The system has a remote plasma source for generating a Plasma region in a chamber, wherein the plasma is an activated Gas generated. The system also has a supply source for introducing a downstream gas, around with the activated gas outside to interact with the plasma region, the activated gas excitation (eg dissociation) of the downstream gas promotes and wherein the excited downstream gas dissociated downstream gas is and does not significantly interfere with an interior surface of the chamber interacts.

The System may include a lock located at an outlet of the chamber located to reduce erosion of the chamber. The lock can z. B. may be partially disposed within the chamber. The barrier can z. Partially within an outlet passage of a chamber be arranged. The system may have a lock inside an outlet passage of the chamber is arranged. The system can have a mixer to downstream gas and activated gas too Mix. The mixer can be a static flow mixer, a screw mixer, Blade mixer, or have a cylindrical layer mixer. The cleaning gas inlet may be between an outlet of the chamber and an inlet of the supply source be.

The Chamber may have a quartz material. In some embodiments the chamber is one piece Quartz glass formed. In some embodiments, the chamber is toroidal. In some embodiments the plasma source is a toroid plasma source.

The invention in another aspect relates to a method of depositing a material onto a substrate. The method involves generating an activated gas with a plasma in a chamber. The method also includes arranging a downstream gas inlet with respect to an outlet of the plasma chamber to allow the activated gas to promote dissociation of a downstream gas introduced through the downstream gas inlet, wherein the Downstream gas contains a material to be deposited, and wherein the dissociated downstream gas does not interact significantly with an inner surface of the plasma chamber.

In some embodiments the plasma is generated by a remote plasma source. The remote Plasma source can, for. An RF plasma generator, a microwave plasma generator or a DC plasma generator. The downstream gas can be connected to one Variety of positions are introduced into the chamber. In some embodiments the downstream gas at a position relative to the outlet of the Chamber introduced what the interaction between the dissociated downstream gas and the inner surface the chamber minimized. The downstream gas may be at one position introduced with respect to the outlet of the chamber, what the degree of dissociation of the downstream gas maximizes. The downstream gas can be connected to one Position with respect to the outlet of the chamber, which determines the degree to which the dissociated downstream gas interacts with the gas inner surface the chamber interacts with the degree to which the downstream gas dissociates is compensated. The material to be deposited may include one or more of Si, Ge, Ga, In, As, Sb, Ta, W, Mo, Ti, Hf, Zr, Cu, Sr or Al.

The Invention, in another aspect, has a system for deposition of a material on a substrate. The system has a remote plasma source for generating a plasma region in a chamber, wherein the Plasma generates an activated gas. The system also has a supply source for insertion a downstream gas containing a material to be deposited to the activated gas outside to interact with the plasma region, the activated gas excitation (eg, dissociation) of the downstream gas promotes and wherein the excited Downstream gas does not significantly interfere with an interior surface Chamber interacts.

The material to be deposited may include one or more of Si, Ge, Ga, In, As, Sb, Ta, W, Mo, Ti, Hf, Zr, Cu, Sr or Al. The system may have a mixer to downstream gas and activated To mix gas. The mixer can be a static flow mixer, a Screw mixer, knife mixer, or a cylindrical layer mixer exhibit. The system may include a purge gas inlet. The cleaning gas inlet may be between an outlet of the chamber and an inlet of the supply source be arranged.

The Invention in another aspect comprises a system for exciting Gases on. The system has a remote plasma source for generating a Plasma region in a chamber, wherein the plasma is an activated Gas generated. The system further has a supply source for introducing a Downstream gas to use with the activated gas outside the plasma area interact with the activated gas excitation of the downstream gas promotes and wherein the stimulated downstream gas is not significant with a inner surface the chamber interacts. The system also has a feature for Providing a gap between an outlet flange of the chamber and the supply source.

In some embodiments the gap is a long, narrow gap that stops the transport Excited gases reduced to a seal between the outlet flange the chamber and a portion of the system is arranged. In some embodiments the gap has a length of at least 2.5 millimeters (one tenth of an inch). In some embodiments the gap has a length from between about 5.08 millimeters and 50.8 millimeters (two tenths of an inch and two inches). In some embodiments, the gap has a width of between about 0.0025 millimeters and 1.524 millimeters (one tenth of a time and sixty mils). In some embodiments, the gap has a width of between about 0.025 Mm and 0.508 mm (one mil and twenty mils). In some embodiments the gap has a relationship of length to width of about 1.66. In some embodiments the gap has a relationship of length to width of about 3.33. In certain embodiments, lies the length the gap between about 2.54 millimeters and about 50.8 millimeters, and the width of the gap is between about 0.0025 Millimeters and about 1,524 millimeters.

In some embodiments the feature is annular. The feature may be a flange. The feature can be a feather seal be. The feature can be within its elastic deformation range compressed and expanded. The feature can be aluminum, sapphire or a nitride. In some embodiments, the feature separates the outlet flange of the chamber from a body of the supply source. The feature can rub between the outlet flange and the body of the supply source restrict. In some embodiments the system has a sealing mechanism between the outlet flange and the supply source on. The sealing mechanism may include an O-ring. The sealing mechanism may have a feather seal. In some embodiments the system has a purge gas inlet. Cleaning gas can through the cleaning gas inlet, through the cleaning gas inlet, to further protect the O-ring.

The The invention in another aspect relates to a method for exciting gases. The procedure involves an activated To generate gas with a plasma in a chamber. The procedure further comprising disposing a downstream gas inlet with respect to an outlet of the chamber to allow the activated gas to Dissociation of a introduced through the gas inlet downstream gas to promote, wherein the dissociated downstream gas not significantly interacting with an interior surface of the chamber. The method further comprises a feature for providing a gap between an outlet flange of the chamber and a Body, the downstream gas inlet having.

In some embodiments the gap is a long, narrow gap, which makes the transport more excited Gases are reduced to a seal between the outlet flange the chamber and a portion of the system is arranged. In some embodiments the gap has a length of at least 2.5 millimeters (one tenth of an inch). In some embodiments the gap has a length from between about 5.08 millimeters and 50.8 millimeters (two-tenths of an inch and two inches). In some embodiments the gap has a width of between about 0.0025 millimeters and 1.524 Millimeters (tenths of a mil and sixty mils). In some embodiments the gap has a width of between about 0.025 millimeters and 0.508 Millimeters (one mil and twenty mils). In some embodiments the gap has a relationship of length to width of about 1.66. In some embodiments the gap has a relationship of length to width of about 3:33. In certain embodiments lies the length the gap between about 2.54 mm and about 50.8 millimeters and the width of the gap is between about 0.0025 Millimeters and about 1,524 Millimeter.

In some embodiments the feature is annular. The feature may be a flange. The feature can be a feather seal be. The feature can be within its elastic deformation range compressed and expanded. The feature can be aluminum, sapphire or a nitride.

In some embodiments the feature separates the outlet flange of the chamber from a body of the Supply source. The feature can rub between the outlet flange and the body of the supply source restrict. In some embodiments The method includes a vacuum seal between the outlet flange and the supply source to create. The vacuum seal can be done using a Sealing mechanism can be generated. In some embodiments is the vacuum seal using an O-ring or a Spring seal generated.

In In another aspect, the invention provides a system for exciting ready for gases. The system includes a remote plasma source for generating a plasma region in a chamber, wherein the plasma generates an activated gas. The system further includes, a supply source for insertion of a downstream gas, with the activated gas outside to interact with the plasma region, the activated gas excitation promotes the downstream gas and wherein the stimulated downstream gas is not significant with a inner surface the chamber interacts.

In some embodiments involves exciting the downstream gas to dissociate the downstream gas. In some embodiments has the system also over a barrier, which is placed at an outlet of the chamber to erosion or to reduce deposition on the chamber. In some embodiments the lock is at least partially disposed in the chamber. In some embodiments the lock is at least partially within the outlet passage arranged the chamber. In some embodiments, the system also a barrier which within an outlet passage of the Chamber is arranged.

In some embodiments the chamber has a quartz. In some embodiments, the chamber is toroidal chamber. In some embodiments the plasma source is a toroid plasma source. In some embodiments the system also has a mixer on to downstream gas and activated To mix gas. In some embodiments the mixer comprises a static flow mixer, a screw mixer, Knife mixer, or a cylindrical layer mixer. In some embodiments the system has a purge gas inlet. In some embodiments is the cleaning gas inlet between an outlet of the chamber and an inlet of the supply source arranged.

The The above and other tasks, the aspects, characteristics and the Advantages of the invention will become apparent from the following description and from the claims obvious.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the invention, as well as the invention itself, will be better understood from the following illustrative Description understood when combined with the attached drawings is read, which are not necessarily to scale.

1 Figure 11 is a schematic partial view of a plasma source for producing dissociated gases, which embodies the invention.

2A FIG. 12 is a cross-sectional view of a gas supply source according to an illustrative embodiment of the present invention. FIG.

2 B is an end view of the gas supply source of 2A ,

3A FIG. 12 is a cross-sectional view of a gas supply source according to an exemplary embodiment of the invention. FIG.

3B is an end view of the gas supply source of 3A ,

4 Figure ₃ is a graph of NF ₃ dissociation percentage as a function of the distance from the outlet of a quartz plasma chamber to which NF _{3 is introduced} into the plasma source using a gas dissociation system according to the invention.

5 Figure ₄ is a graph of the CF ₄ dissociation percentage as a function of the distance from the outlet of a quartz plasma chamber to which CF _{4 is introduced} into the plasma source, using a gas dissociation system according to the invention.

6 Figure ₃ is a plot of NF ₃ dissociation percentage as a function of plasma gas flow rate with a gas dissociation system according to the invention.

7 Figure ₃ is a plot of NF ₃ dissociation percentage as a function of plasma gas pressure using a gas dissociation system according to the invention.

8th Figure ₃ is a graph of NF ₃ dissociation percentage as a function of downstream NF ₃ flow rate using a gas dissociation system according to the invention.

9 Figure ₄ is a graph of CF ₄ dissociation percentage as a function of plasma gas flow rate using a gas dissociation system according to the invention.

10 Figure ₄ is a graphical representation of the CF ₄ dissociation percentage as a function of plasma gas pressure using a gas dissociation system according to the invention.

11A Figure ₄ is a graph of the CHF ₄ percent dissociation as a function of plasma gas flow rate using a gas dissociation system according to the invention.

11B Figure ₃ is a graph of the CHF ₄ percent dissociation as a function of downstream CHF ₃ plasma gas flow rate using a gas dissociation system according to the invention.

12 FIG. 13 is a partial schematic view of a plasma source for producing dessociated gases embodying the invention. FIG.

13 is a graphical representation of percent dissociation of _NF3 as a function of distance from the output of a quartz plasma chamber is introduced to the NF ₃ into the plasma source, using a gas dissociation system according to the invention.

14 FIG. 12 is a cross-sectional view of a portion of a gas supply source according to an exemplary embodiment of the invention. FIG.

15A Figure 12 is a cross-sectional view of a portion of a plasma source embodying the invention.

15B is an enlarged view of part of the 15A ,

16 Figure 4 is an isometric cross-sectional view of a portion of a gas dissociation source incorporating principles of the invention.

17 Figure 3 is a schematic illustration of a portion of a gas dissociation source incorporating principles of the invention.

18A Figure 12 is a cross-sectional view of a portion of a plasma source embodying the invention.

18B is an enlarged view of part of the 18A ,

18C is an enlarged view of part of the 18A ,

19 Figure 3 is a schematic diagram of a portion of a supply source according to an exemplary embodiment of the invention.

20A is a schematic illustration of a toroidal plasma chamber, according to an exemplary embodiment of the invention.

20B FIG. 11 is an enlarged view of a portion of the toroidal plasma chamber of FIG 20A ,

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS EMBODIMENTS

1 is a partial schematic representation of a gas dissociation system 100 for producing dissociated gases embodying the invention. Plasmas are often used to activate gases, which are put into an excited state so that the gases have an increased reactivity. Stimulating a gas involves increasing the energy state of the gas. In some cases, the gases are excited to produce dissociated gases containing ions, free radicals, atoms, and molecules. The system 100 has a plasma gas source 112 on the over a gas line 116 to a plasma chamber 108 connected. A valve 120 controls the flow of plasma gas (e.g., O ₂ , N ₂ , Ar, NF ₃ , H _2, and He) from the plasma gas source 112 through the gas line 116 into the plasma chamber 108 , The valve 120 can z. B. be a solenoid valve, a proportional solenoid valve or a mass flow controller. A plasma generator 184 creates a range of plasma 132 within the plasma chamber 108 , The plasma 132 contains a plasma activated gas 134 partially from the chamber 108 flows out. The plasma activated gas 134 is generated as a result of heating and activation of the plasma gas by the plasma 132 , In this embodiment, the plasma generator is located 184 partly around the plasma chamber 108 , The system 100 also has an energy source 124 on, the power over connection 128 to the plasma generator 184 provides to the plasma 132 (which is the activated gas 134 contains) in the plasma chamber 108 to create. The plasma chamber 108 can z. B. may be formed of a metallic material such as aluminum or a refractory metal or may be formed of a dielectric material such as quartz or sapphire. In some embodiments, a gas other than the plasma gas is used to generate the activated gas. In some embodiments, the plasma gas is used to generate the plasma from both the plasma and the activated gas.

The plasma chamber 108 has an outlet 172 that's about a passage 168 to an inlet 176 a process chamber 156 connected. At least part of the activated gas 134 flows out of the outlet 172 the plasma chamber 108 out and through the passage 168 , The amount of energy in the activated gas 134 is guided with the distance increases along the length of the passage 168 from. A source of supply 104 (eg a gas supply source) is at a distance 148 along the length of the passage 168 , The source of supply 104 can also be inside the lower part of the plasma chamber 108 be arranged. The gas supply source 104 has at least one gas inlet 180 , the gas (for example, a downstream gas, which is activated by the gas 134 should be dissociated) in the area 164 of the passage 168 introduces. A downstream gas source 136 carries the downstream gas (eg, NF ₃ , CF ₄ , CHF ₃ , C ₂ F ₆ , C ₂ HF ₅ , C ₃ F ₈ , C ₄ F ₈ , XeF ₂ , Cl ₂ , ClF ₃ , H ₂ or NH ₃ ) through a gas line 140 and through the gas inlet 180 in the area 164 of the passage 168 one. A valve 144 controls the flow of the downstream gas through the gas line 140 , The downstream gas may include deposition precursors which, e.g. As Si, Ge, Ga, In, As, Sb, Al, Cu, Ta, Ti, Mo, W, Hf, Sr or Zr contain. The valve 144 can z. B. be a solenoid valve, a proportional solenoid valve or a mass flow controller.

Downstream gas in the area 164 of the passage 168 at the distance 148 introduced interacts with at least a portion of the activated gas 134 to a flow of dissociated downstream gas 152 to produce. The term "downstream gas" used herein refers to gas entering the passageway 168 through the gas inlet 180 is introduced. The term "the dissociated downstream gas" as used herein refers to the gas that results from the interaction of the activated gas 134 is generated with the downstream gas. The dissociated downstream gas 152 can z. B. a mixture of the activated gas 134 , of the downstream gas and that of the activated gas 134 contain excited (eg, dissociated) downstream gases. In some embodiments, the dissociated downstream gas contains 152 Essentially of gas passing through the activated gas 134 was dissociated. In other embodiments, the dissociated downstream gas contains 152 z. B. substantially activated gas 134 ,

The dissociated downstream gas 152 flows through the passage 168 and in the inlet 176 the process chamber 156 , A sample holder 160 who is in the process chamber 156 is located, carries a material through the dissociated downstream gas 152 is processed. An optional gas distributor or shower head (not shown) may be located at the inlet 176 the chamber 156 be arranged to the dissociated gas to the surface of, for. B. a substrate on the sample holder 160 is to distribute evenly. In one embodiment, the dissociated downstream gas promotes 152 Etching a semiconductor wafer or a substrate on the sample holder 160 in the process chamber 156 is arranged. In another embodiment, the dissociated downstream gas promotes 152 Deposition of a thin film on a substrate on the sample holder 160 in the process chamber 156 is arranged. The activated gas 134 has enough de energy to interact with the downstream gas, thus the dissociated downstream gas 152 to produce.

In some embodiments, a percentage of the downstream gas that is in the range 164 of the passage 168 is introduced by the activated gas 134 dissociated. The degree (e.g., percentage rate) to which the downstream gas is dissociated is a function of e.g. As the energy level and the amount of energy from the activated gas 134 is carried. The activated gas 134 may have an energy level greater than the binding energy level of the downstream gas to break the bonds between atoms of the downstream gas to achieve dissociation. In some embodiments, the activated gas 134 also carry enough energy to thermally excite and dissociate the downstream gas through multiple collision processes. For example, CF _{4 has} a binding energy level of about 5.7 eV and NF _{3 has} a binding energy level of about 3.6 eV. Accordingly, under similar operating conditions of the dissociation system 100 , become higher energies of the activated gas 134 needed to dissociate CF ₄ , as it is needed to dissociate NF ₃ .

In another embodiment, because the amount of in the activated gas 134 containing energy at a distance from the outlet 172 the chamber 108 along the passage 168 decreases, the distance must be 148 small enough to arrange the gas inlet 180 in relation to the outlet 172 the plasma chamber 108 so that the activated gas 134 effectively encourages (eg, dissociation) the downstream gas that enters the passageway 168 through the downstream gas source 104 is introduced. The distance 148 must, when inserting the gas inlet 180 in relation to the outlet 172 the plasma chamber 108 too big enough so that the dissociated downstream gas 152 not significantly with an inner surface of the plasma chamber 108 interacts. In some embodiments, the supply source 104 within the lower part of the plasma chamber 108 be arranged, for. B. when the plasma density in the upper part of the plasma chamber 108 is concentrated.

In one embodiment, the system 100 a lock on (eg a shield or an intermediate layer, not shown) in the passageway 168 at the outlet 172 the chamber 108 is arranged. The barrier protects the passage 168 by making the contact of the passage 168 with the reactive gases in the system 100 reduced. In some embodiments, the shield or interlayer is partially within the chamber 108 , The shield or interlayer may be formed of a material that is substantially resistant to the reactive gases (eg, the activated gas 134 and the dissociated downstream gas 152 ). In this way, since the shield or interlayer is exposed to the reactive gases, the shield or interlayer may be used to erode the chamber 108 to reduce.

In one embodiment, the intermediate layer is a tubular material that is within the passageway 168 at the outlet 172 the chamber 108 is arranged. The intermediate layer may be formed of a material that is chemically compatible with the reactive gases. The intermediate layer may consist entirely or partially of sapphire material. In some embodiments, the shield or the intermediate layer is removable, allowing for periodic replacement. The shield or interlayer may therefore consist of the same material as the plasma chamber for chemical compatibility.

In some embodiments, the shield or intermediate layer reduces thermal stresses on components in the chamber 108 , The shield or intermediate layer may be made of a material that causes the loss of the reactive species in the activated gas 134 and in the dissociated downstream gas 152 thereby maximizing the outlet of the reactive species (s). Include materials with low recombination properties, e.g. Quartz, diamonds, diamond-like carbon, sapphire, hydrocarbon and fluorocarbon. The shield or interlayer may also be formed of a metal (eg, aluminum, nickel or stainless steel) for better mechanical and thermal properties. The surface of a metal shield or intermediate layer may be coated with a layer consisting of a chemically compatible material or low surface recombination / reaction material to improve overall performance.

In one embodiment, the system 100 an additional cleaning gas inlet (not shown) located between the outlet 172 the plasma chamber 108 and the gas inlet 180 is arranged. Purge gas can through the gas inlet 180 be introduced to reflux the downstream gas into the plasma chamber 108 to prevent (or minimize). The reflux can occur when the flow rate of the plasma gas is small. The purge gas may be a noble gas (eg Ar or He) or a process gas (eg O ₂ or H ₂ ).

In one embodiment, the system has 100 via a sensor (not shown) for measuring the dissociation percentage of the downstream gas in the passage 168 , In determined Embodiments, the same sensor is used to determine the degree to which the dissociated downstream gas 152 adversely with an inner surface of the plasma chamber 108 interacts. As an example, a Nicolet 510P Thermo Electron Corporation of Madison, Wisconsin as the sensor for measuring the dissociation percentage and degree to which the dissociated downstream gas 152 with the inner surface of the chamber 108 interacts, to be used. The sensor measures z. For example, the presence of SiF ₄ . SiF ₄ is a byproduct of fluorine (a dissociated downstream gas) which reacts with a quartz plasma chamber. The sensor is not necessary but can be in the system 100 be used. Accordingly, sensor measurements indicating the presence of e.g. For example, indicate high level of SiF4, an indicator that the dissociated downstream gas 152 disadvantageous with an inner surface of a quartz plasma chamber 108 interacts. The dissociation percentage of the downstream gas depends on a variety of factors. One factor is the distance 148 where the downstream gas enters the area 164 of the passage 168 is introduced. Another factor is the amount of energy in the activated gas 134 in the distance 148 in which the downstream gas in the area 164 of the passage 168 is introduced.

In one embodiment, the downstream gas is at a distance 148 in relation to the outlet 172 the plasma chamber 108 introduced the interaction between the dissociated gas 152 and the inner surface of the plasma chamber 108 minimized. In another embodiment, the downstream gas is at a distance 148 in relation to the outlet 172 the plasma chamber 108 introduced, which maximizes the degree of dissociation of the downstream gas. In another embodiment, the downstream gas is at a distance 148 in relation to the outlet 172 the plasma chamber 108 introduced the degree to which the dissociated downstream gas 152 with an inner surface of the plasma chamber 108 interacts with the degree of dissociation of the downstream gas.

The plasma source 184 can z. As a DC plasma generator, radio frequency (RF) plasma generator or a microwave plasma generator. The plasma source 184 may be a remote plasma source. As an example, the plasma source 184 a remote plasma source such as ASTRON (R) or R * evolution (R) manufactured by MKS Instruments, Inc. of Wilmington, MA. A DC plasma generator generates DC discharges by applying a potential between two electrodes in a plasma gas (e.g., O ₂ ). An RF plasma generator generates high frequency discharges by either electrostatic or inductive coupling of energy from a power source into a plasma. A microwave plasma generator generates microwave discharges by directly coupling the microwave energy through a microwave transparent window into a plasma chamber containing a plasma gas.

In one embodiment, the plasma source is a toroidal plasma source and the chamber 108 is a quartz chamber. The quartz chamber can z. B. consist of a piece of quartz glass. In other embodiments, alternative types of plasma sources and chamber materials may be used. For example, sapphire, alumina, aluminum nitride, yttria, silicon carbide, boron nitride or a metal such as aluminum, nickel or stainless steel or a coated metal such as anodized aluminum may be used.

The energy source 124 can z. B. an RF power source or a microwave energy source. In some embodiments, the plasma chamber has 108 via means for generating the free charges that causes an initial ionization event, the plasma 132 in the plasma chamber 108 Kindle. The initial ionization event came to be a short high-voltage pulse applied to the plasma chamber 108 is applied. The pulse may have a voltage of about 500 to 10,000 volts and may be about 0.1 microseconds to 100 milliseconds long. A noble gas such as argon can enter the plasma chamber 108 be introduced to the ignition of the plasma 132 reduce required voltage. Ultraviolet radiation can also be used to free the charges in the plasma chamber 108 which provide the initial ionization event by which the plasma 132 in the plasma chamber 108 is ignited.

A control system (not shown) may e.g. B. used to operate the valve 116 (eg, a mass flow controller) to thereby control the flow of plasma gas from the plasma gas source 112 into the plasma chamber 108 to regulate. The control system can also be used to control the operation of valve 144 (eg, a mass flow controller) to thereby control the flow of downstream gas from the downstream gas source 136 in the area 164 to regulate. The control system can also be used to determine the operating parameters (eg, applied power to the plasma 132 and subsequently the activated gas 134 , or gas flow rate or pressure) of the plasma generator 184 to modify.

In some embodiments, the system is 100 for depositing a material on a semiconductor wafer on the sample holder 160 in the process chamber 156 is arranged, thought. To the For example, the downstream gas may contain a deposition material (eg. As SiH4, TEOS, or WF _6). The downstream gas may also contain other deposition precursors such as. B. Si, Ge, Ga, In, Sn, As, Sb, Al, Cu, Ta, Ti, Mo, W, Hf, Sr and Zr have. The activated gas 134 interacts with the deposition material in the downstream gas to produce a deposition species that are deposited on the sample holder 160 located wafer can be deposited. Exposure of the deposition precursors to a plasma can cause precursor molecules to disintegrate in the gas capping layer. Accordingly, activation of the precursors by activated gases may be advantageous in applications where decomposition of the precursors on a deposition surface is preferred. In some embodiments, the downstream gas comprises one or more gases containing metallic or semiconductor-containing materials, or the oxides or nitrides containing metallic or semiconductor-containing materials.

The system 100 can be used to deposit optical layers on a substrate such as a mirror, a filter or a lens. The system 100 can be used to modify surface properties of a substrate. The system 100 can be used to make a surface biocompatible or alter its water absorption properties. The system 100 can be used to generate the microscopic particles and powders or those in the nano range.

2A and 2 B illustrate an embodiment of a supply source 104 which realizes the principles of the invention. In this embodiment, the supply source 104 a disk-shaped body 200 , the one central area 164 Are defined. The area 164 extends from a first end 208 of the body 200 to a second end 212 of the body 200 , The source 104 also has six inlets 180a . 180b . 180c . 180d . 180e and 180f (in general 180 ), which are through the body 200 the source 104 to extend. The inlets 180 each extend radially from openings in an outer surface 204 of the body 200 to openings along an inner surface 214 of the area 164 of the body 200 , In one execution forums are the inlets 180 to a downstream gas source, e.g. As the downstream gas source 136 of the 1 connected. The downstream gas source 136 provides a flow of downstream gas over the inlets 180 to the area 164 to disposal. An activated gas 134 flows into the source 104 over the first end 204 the source 104 one. At least part of the activated gas interacts 134 with at least a portion of the downstream gas to dissociated downstream gas 152 to produce. The dissociated downstream gas 152 flows out of the second end 212 of the body 200 the source 104 out and along z. B. the passage 168 of the dissociation system 100 , Other numbers, geometries and angular orientations of the inlets 180 are considered. As an example, the inlets 180 in relation to the middle of the range 164 of the body 200 the source 104 to be oriented at an angle when aligning the end view of the 2 B considered.

In another embodiment, in 3A and 3B is shown has the source of supply 104 has a disc-shaped body 200 , the one area 164 Are defined. The body 200 has a first end 208 and a second end 212 , The source 104 has six inlets 180a . 180b . 180c . 180d . 180e and 180f (in general 180 ), which are through the body 200 the source 104 extend. Other numbers of inlets may be used in other embodiments. The inlets 180 each extend at an angle 304 of openings in an outer surface 204 of the body 200 to openings along an inner surface 214 of the area 164 of the body 200 , In one embodiment, the inlets are 180 to a downstream gas source e.g. As the downstream gas source 136 of the 1 connected. The downstream gas source 136 puts a flow of downstream gas over the inlets 180 to the area 164 to disposal. The downstream gas is at least partially activated by an activated gas 134 dissociated into the area 164 over the first end 208 of the body 200 is introduced. Dissociated downstream gas 152 leaves the area 164 over the second end 212 of the body 200 ,

To illustrate, an experiment was performed to dissociate NF ₃ . The source of supply 104 from 2A and 2 B was used to NF ₃ in the field 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. 4 shows a diagram 400 That the result of the _NF3 dissociation with a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 412 of the diagram 400 is the dissociation percentage of NF ₃ . The X-axis 416 of the diagram 400 is the distance 148 at which the NF ₃ (downstream gas) in the area 164 in relation to the outlet 172 a quartz plasma chamber 108 is introduced.

4 shows that at a constant flow rate of the plasma gas (O ₂ / N ₂₎ and the downstream gas _(NF3), the percent dissociation of _NF3 increases with gas pressure and decreases with distance from the outlet of the plasma chamber. While the distance 148 increased, verrin the dissociation percentage of NF ₃ for a specified pressure level of the plasma gas ( 2 Torr; 3 torr; 4 Torr; 5 Torr (curve 408 ); 6 Torr (curve 404 ); 7 Torr. The curve 404 shows z. B. that for the plasma O ₂ / N ₂ with a flow rate of 4 / 0.4 slm in the plasma chamber 108 and at a plasma gas pressure of 6 Torr, the NF ₃ dissociation percentage of about 92% dissociation of NF ₃ at a distance 148 from about 1.0 centimeter to about 8% dissociation of NF ₃ at a distance 148 reduced by about 12.2 centimeters. The curve 408 shows that for the plasma O ₂ / N ₂ with a flow rate of 4 / 0.4 slm in the plasma chamber 108 and at a plasma gas pressure of 5 Torr, the NF3 dissociation percentage of about 77% dissociation of NF ₃ at a distance 148 from about 1.0 centimeter to about 3% dissociation of NF ₃ at a distance 148 reduced by about 12.2 centimeters.

In the experiment, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 with the aforementioned Nicolet 510P Sensor measured. The Nicolet 510P Sensor has a sensitivity of 1 sccm of SiF4. In the experiment, no SiF4 was detected with the Nicolet sensor under conditions of different plasma gas pressures and distances 148 measured under which the NF ₃ (downstream gas) in the range 164 in relation to the outlet 172 a quartz plasma chamber 108 is introduced.

To illustrate, an experiment was performed to dissociate CF ₄ . The source of supply 104 from 3A and 3B was used to CF ₄ in the area 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. An angle of 30 degrees was used for the angle 304 for each of the inlets 180 preselected.

5 shows a diagram 500 that is the result of CF ₄ dissociation, which involves a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 512 of the diagram 500 is the dissociation percentage of CF ₄ . The X-axis 516 of the diagram 500 is the distance 148 from which the CF ₄ (downstream gas) in the range 164 of the passage 168 in relation to the outlet 172 a quartz plasma chamber 108 is introduced.

5 shows that with the increase in the distance 148 the dissociation percentage of CF4 decreased for various types of plasma gas, flow rate and pressures decreased, (4 slm of O ₂ mixed with 0.4 slm of N ₂ at 4 Torr; 4 slm of O ₂ at 4 Torr (curve 504 ); 3 slm of N ₂ at 2 torr; and 6 slm of Ar at 6 Torr (curve 508 )). Example shows curve 504 That for a gas flow of the plasma O ₂ by the plasma gas source 112 at a rate of 4 slm with a pressure of 4 Torr in the plasma chamber 108 , the dissociation percentage of 100 sccm of CF4, of about 33% CF4 dissociation at a distance 148 from about 0.53 centimeters to about 2% CF4 dissociation at a distance 148 of about 1.05 centimeters, decreases. Curve 508 shows that with a flow rate of an Ar plasma gas of 6 slm into the plasma chamber 108 and with a pressure of 6 Torr, the dissociation percentage of CF4 is about 24% CF4 dissociation at a distance 148 from about 0.53 centimeters to about 1% CF4 dissociation at a distance 148 decreases by about 1.05 centimeters.

In the experiment, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 with the aforementioned Nicolet 510P Sensor measured. In the experiment, no SiF4 was used with the Nicolet sensor for the different plasma gas species, flow rates, pressures, and distances 148 , below whose conditions the CF4 (downstream gas) in the range 164 in relation to the outlet 172 a quartz plasma chamber 108 is introduced, measured.

Another experiment was performed to dissociate NF ₃ . The source of supply 104 from 2A and 2 B was used to 100 sccm of NF ₃ in the range 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. The downstream gas (NF ₃ ) will be in the range 164 of the passage 168 at about 1 centimeter (that is, the distance 148 ) with respect to the outlet 172 the quartz plasma chamber 108 introduced. 6 illustrated shows a diagram 600 That the result of the _NF3 dissociation with a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 612 of the diagram 600 is the dissociation percentage of NF ₃ . The X-axis 616 of the diagram 600 is the gas flow rate in standard liters per minute of plasma gas (N ₂ (curve 604 ); O ₂ / N ₂ at a gas flow rate of 10/1 (curve 608 ); Ar (curve 610 ); H ₂ ; and he) the in the chamber 108 through the plasma gas source 112 is introduced.

Example shows curve 604 in that for an N ₂ plasma gas, the NF 3 dissociation percentage is from 100 sccm of approximately 16% NF ₃ dissociation with an N ₂ plasma gas flow rate of approximately 1.0 slm to approximately 82% NF ₃ dissociation with an N ₂ plasma gas flow rate of approximately 2.3 slm increases. Curve 608 shows that for a gas of plasma O ₂ / N ₂ , the NF3 dissociation percentage of 100 sccm of about 16% NF ₃ dissociation with a flow rate of the Gases O ₂ / N _{2 increases} from 2 / 0.2 slm to approximately 79% NF ₃ dissociation with a flow rate of the gas O ₂ / N ₂ of approximately 5.5 / 0.55 slm. Curve 610 Figure 4 shows that for an Ar plasma gas, the dissociation percentage of a flow of 100 sccm of NF ₃ from about 14% NF ₃ dissociation with an Ar plasma gas flow rate of about 2.0 slm to about 29% NF ₃ dissociation with an Ar plasma gas flow rate of about 10 slm increases.

In the experiment, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 with the aforementioned Nicolet 510P Sensor measured. In the experiment, no SiF4 was measured with the aforementioned Nicolet sensor for the different plasma gas species and flow rates.

Another experiment was performed to dissociate NF ₃ . The source of supply 104 from 2A and 2 B was used to 100 sccm of NF ₃ in the range 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. The downstream gas (NF ₃ ) is at approximately 1.0 centimeters (that is, the distance 148 ) with respect to the outlet 172 the plasma chamber 108 introduced. 7 shows a diagram 700 That the result of the _NF3 dissociation with a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 712 of the diagram 700 is the dissociation percentage of NF ₃ . The X-axis 716 of the diagram 700 is gas pressure in torr of the plasma gas that enters the plasma chamber 108 is introduced. Under the operating conditions of the experiment, the percent dissociation of _NF3 using an Ar plasma gas (shown as curve 710 ) to Ar gas pressure relatively insensitive.

Example shows curve 704 in that for a N ₂ plasma gas flow of 1 slm, the NF3 dissociation percentage increases from 100 sccm from about 15% NF ₃ dissociation with a plasma gas pressure of 1 Torr to about 42% NF ₃ dissociation with a plasma gas pressure of 3 Torr. Curve 708 shows that for a gas flow of the plasma O ₂ / N ₂ of 4 / 0.4 slm, the NF3 dissociation percentage of 100 sccm from about 10% NF ₃ dissociation with a plasma gas pressure of 1 Torr to about 90% NF ₃ dissociation with a plasma gas pressure of 6 Torr rises. Curve 710 shows that for an Ar plasma gas flow of 6 slm, the NF3 dissociation percentage of 100 sccm is about 19% with a plasma gas pressure of 2 Torr, 22% with a plasma gas pressure of 6 Torr and about 21% with a plasma gas pressure of 10 Torr.

In the experiment, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 with the previously mentioned Nicolet 510P Sensor measured. In the experiment, no SiF4 was measured with the Nicolet sensor for the different plasma gas species, flow rates and pressures.

Another experiment was performed to dissociate NF ₃ . The source of supply 104 from 2A and 2 B was used to NF ₃ in the field 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. The downstream gas (NF ₃ ) is at about 1 centimeter (that is, the distance 148 ) with respect to the outlet 172 the plasma chamber 108 introduced. 8th shows a diagram showing the result of NF ₃ dissociation using a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 812 of the diagram 800 is the NF3 dissociation percentage. The X-axis 816 of the diagram 800 is the downstream NF3 flow rate in sccm.

Curve 804 on the diagram 800 of the 8th shows that for the plasma gas O ₂ / N ₂ with a flow rate of 4 / 0.4 slm and a pressure of 5 Torr, the NF3 dissociation percentage, from an NF ₃ flow rate of about 25 sccm to a NF ₃ flow rate of about 200 sccm while remaining at about 75%. It shows that under these operating conditions the dissociation percentage of NF ₃ to the flow rate of NF _{3 is} relatively insensitive, which is due to the relatively constant dissociation percentage of NF ₃ (curve 804 ) is occupied. Curve 806 on the diagram 800 from 8th shows that for an Ar plasma gas at a flow rate of about 6 slm and a pressure of 6 Torr, the sccm NF3 dissociation of about 40% with a NF ₃ of approximately 50 to approximately 15% with a NF ₃ flow rate of about 200 sccm decreases.

In the experiment, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 with the previously described Nicolet 510P Sensor measured. In the experiment, no SiF4 was used with the Nicolet sensor for the different operating conditions of the gas dissociation system 100 measured.

As an illustration, another experiment was performed to dissociate CF ₄ . The source of supply 104 from 3A and 3B was used to 100 sccm of CF ₄ in the range 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. An angle of 30 degrees was used for the angle 304 for each of the inlets 180 preselected. The Downstream gas (CF4) is at approximately 0.5 centimeters (that is, the distance 148 ) with respect to the outlet 172 the plasma chamber 108 introduced. 9 shows a diagram 900 that is the result of CF ₄ dissociation, which involves a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 912 of the diagram 900 is the dissociation percentage of CF ₄ . The X-axis 916 of the diagram 900 is the gas flow rate in standard liters per minute of plasma gas (N ₂ (curve 904 ); O ₂ / N ₂ (curve 908 ); O ₂ ; and Ar) that in the chamber 108 through the plasma gas source 112 is introduced.

9 Figure ₄ illustrates that at 100 sccm from the downstream CF ₄ flux, the CF ₄ dissociation percentage increases as the plasma gas flow rate increases. Example shows curve 904 in that for an N ₂ plasma gas, the dissociation percentage of a CF ₄ flow of 100 standard cubic centimeters per minute of CF ₄ from about 10% CF ₄ dissociation with an N ₂ plasma gas flow rate at about 1.0 slm to about 32% CF4 dissociation with an N ₂ plasma gas flow rate increases at about 3 slm. Curve 908 shows that for the plasma O ₂ / N ₂ , the dissociation percentage of a CF ₄ flow rate of 100 sccm of about 5% CF ₄ dissociation with a gas flow rate of the plasma O ₂ / N ₂ from about 2.0 / 0.2 slm to about 46% CF ₄ dissociation increases with a gas flow rate of plasma O ₂ / N ₂ of about 5.0 / 0.5 slm.

In the experiment, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 with the aforementioned Nicolet 510P Sensor measured. In the experiment, no SiF4 was measured with the Nicolet sensor for the different plasma gas species and flow rate.

For illustration, another experiment was conducted to dissociate CF _4th The source of supply 104 from 3A and 3B was used to 100 sccm of CF ₄ in the range 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. An angle of 30 degrees was used for the angle 304 for each of the inlets 180 preselected. The downstream gas (CF ₄ ) is at about 0.5 centimeters (that is, the distance 148 ) with respect to the outlet 172 the plasma chamber 108 introduced. 10 shows a diagram 1000 that is the result of CF ₄ dissociation, which involves a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 1012 of the diagram 1000 is the dissociation percentage of CF ₄ . The X-axis 1016 of the diagram 1000 is the gas pressure in Torr of the plasma gas (1 slm of N ₂ ; 4 / 0.4 slm of O ₂ / N ₂ (curve 1004 ); 4 slm of O _{2 ;} and 6 slm of Ar (curve 1008 )).

Curve 1004 shows that for a gas flow rate of the plasma O ₂ / N ₂ of 4 / 0.4 slm, the dissociation percentage of a flow rate of 100 standard cubic centimeters per minute of CF ₄ of about 5% CF ₄ dissociation with a plasma gas pressure of 1.0 Torr to about 39% CF ₄ dissociation increases with a plasma gas pressure of 6 Torr. Curve 1008 shows that for a gas flow rate of the plasma Ar of 6 slm, the dissociation percentage of a flow of 100 standard cubic centimeters per minute of CF ₄ from about 20% CF ₄ dissociation with a plasma gas pressure of 2.0 Torr to about 25% CF ₄ dissociation with a plasma gas pressure increased by 10 Torr In the experiment, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 with the aforementioned Nicolet 510P Sensor measured. In the experiment, no SiF4 was measured with the Nicolet sensor for the different plasma gas species, flow rates and pressures.

As an illustration, another experiment was performed to dissociate CHF3. The source of supply 104 from 3A and 3B was used to CHF3 in the range 164 of the body 200 the source of supply 104 introduce. An inside diameter of about 0.5 millimeters became for each of the inlets 180 preselected. An angle of 30 degrees was used for the angle 304 for each of the inlets 180 preselected. The downstream gas (CF ₄ ) is at about 0.5 centimeters (that is, the distance 148 ) with respect to the outlet 172 the plasma chamber 108 introduced.

11A shows a diagram 1100 that is the result of the CHF ₃ dissociation, which involves a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The plasma gas is a mixture of O ₂ and N ₂ at a ratio of O ₂ to N ₂ of 10: 1. The Y-axis 1112 of the diagram 1100 is the dissociation percentage of CHF3. The X-axis 1116 of the diagram 1100 is the gas flow rate in standard liters per minute of O ₂ in plasma gas entering the chamber 108 through the plasma gas source 112 is introduced. Curve 1104 from 11A shows that sccm for a plasma gas pressure of 1.5 Torr and a downstream CHF3 of 100, nearly 100% dissociation of CHF3 is achieved, while the flow rate of O ₂ in the plasma gas in the range of 1 slm to 4 slm located.

11B shows a diagram 1102 that is the result of the CHF ₃ dissociation, which involves a gas dissociation system, such as the gas dissociation system 100 of the 1 was obtained. The Y-axis 1114 of the diagram 1102 is the dissociation percentage of CHF ₃ . The X-axis 1118 of the diagram 1102 the downstream flow rate is CHF ₃ in sc cm. Curve 1108 of the 11B shows that for a plasma gas flow rate of 4 slm of O ₂ and 0.4 slm of N ₂ at a pressure of 1.5 Torr, nearly 100% CHF ₃ dissociation is achieved while the downstream CHF ₃ flow rate ranges from 100 sccm up to 200 sccm is enough.

In the experiments, minimal adverse effects of the dissociated downstream gas 152 on the quartz chamber 108 were with the aforementioned Nicolet 510P Sensor measured. In the experiment, no SiF4 was used with the Nicolet sensor for the different plasma gas pressures and the distances 148 measured below which the CHF ₃ (downstream gas) in the range 164 in relation to the outlet 172 a quartz plasma chamber 108 is introduced.

In another embodiment, in the 12 shown, the system features 100 via a plasma gas source 112 that have a gas line 116 at the plasma chamber 108 connected. A plasma generator 184 creates a plasma area 132 within the plasma chamber 108 , The plasma 132 contains a plasma activated gas 134 , of which a part of the plasma area 132 flows out. The system 100 has a supply source 104 on. In this embodiment, the supply source 104 an L-shaped tube 190 up to a gas inlet of the feed source 104 connected is. The pipe 190 Forwards a gas (for example, a downstream gas that passes through the activated gas 134 to be dissociated) into one area 192 of the system 100 one. The area 192 (that is, the place where the activated gas 134 interacting with the downstream gas) depends on where an outlet 196 of the pipe 190 is positioned. The outlet 196 of the pipe 190 can z. B. at a distance 194 inside the outlet 172 the plasma chamber 108 be arranged. Optionally, the outlet 196 of the pipe 190 at a distance outside the outlet 172 the chamber 108 , be arranged when, for. B. the supply source 104 instead in a direction away from the outlet 172 and in the direction of the process chamber 156 is moved. In this way, the downstream gas can enter the system 100 inside or outside the plasma chamber 108 be introduced.

As an illustration, an experiment for NF ₃ dissociation was performed. The source of supply 104 of the 12 was used to NF ₃ in the field 192 of the system 100 introduce. 13 shows a diagram 1300 that is the result of dissociation NF ₃ , which involves a gas dissociation system, such as the gas dissociation system 100 of the 12 was obtained. The Y-axis 1312 of the diagram 1300 is the dissociation percentage of NF ₃ . The X-axis 1316 of the diagram 1300 is the distance at which the NF ₃ (downstream gas) is in the range 192 in relation to the outlet 172 a quartz plasma chamber 108 is introduced. During a test in the experiment, the NF _{3 became} at a distance 194 about 0.5 centimeters inside the outlet 172 the chamber 108 introduced. The NF ₃ was also at a distance during additional tests 148 (about 1.0 centimeters, 3.8 centimeters, 6.6 centimeters, 9.4 centimeters and 12.2 centimeters) outside the outlet 172 the chamber 108 introduced.

13 Figure 4 shows that the dissociation percentage of NF ₃ for various plasma gas rates, flow rates and pressures decreases (4 standard liters per minute (slm) of O ₂ at 4 torr (plot 1304 ); 3 slm of N ₂ at 2 torr; 10 slm of Ar at 9 Torr; 6 slm of Ar at 6 Torr; and 4 slm of O ₂ mixed with 0.4 slm of N ₂ at 4 torr (curve 1308 )). Example shows curve 1304 That for a gas flow of the plasma O ₂ by the plasma gas source 112 at a rate of 4 standard liters per minute (slm) with a pressure of 4 Torr in the plasma chamber 108 , the dissociation percentage of 100 standard cubic centimeters per minute (sccm) of NF ₃ of about 90% NF ₃ dissociation at a distance 194 from about 0.5 centimeters to about 2% NF ₃ dissociation at a distance 148 reduced by about 12.2 centimeters. Curve 1308 shows that for a gas flow rate of the plasma O ₂ / N ₂ of 4 / 0.4 slm in the plasma chamber 108 with a pressure of 4 Torr, the percent dissociation of _NF3 of about 81% NF ₃ dissociation at a distance 194 from about 0.5 centimeters to about 0% NF ₃ dissociation at a distance 148 reduced by about 12.2 centimeters.

In the experiment, minimal harmful effects of the dissociated downstream gas 152 on the quartz chamber 108 with the aforementioned Nicolet 510P Sensor measured. In the experiment, no SiF4 was used with the Nicolet sensor for the different plasma gas pressures and spacings 194 and 148 measured below which the NF ₃ (downstream gas) in the range 192 in relation to the outlet 172 a quartz plasma chamber 108 is introduced.

14 Figure 4 is a schematic cross-sectional view of a portion of a gas dissociation system (eg, the system 100 of the 1 ) including a supply source 104 used in the production of dissociated gases embodying the invention. A body 200 the source of supply 104 is at the outlet 172 the plasma chamber 108 connected (only part of the chamber 108 is shown for the sake of clarity of illustration). The source 104 has six inlets 180a . 180b . 180c . 180d . 180e and 180f (in general 180 ), which are through the body 200 the source 104 extend. The inlets 180b . 180c . 180e and 180f are not pictured for the sake of clarity of picture. The inlets 180 each extend at an angle 304 of openings in an outer surface 204 of the body 200 to openings along an inner surface 214 of the area 164 of the body part 200 , The inlets 180 are connected to a downstream gas source (eg the gas source 136 of the 1 ) to a flow of the downstream gas through the inlets 180 to the area 164 provide.

Plasma activated gas 134 flows into the area 164 through the outlet 172 the plasma chamber 108 one. Reactions between the downstream gas and plasma activated gas 134 occur when the two gas streams are mixed. The promotion of the mixing of the gases improves the dissociation of the downstream gas. In some embodiments, it is advantageous to mix the gas close to the outlet 172 the plasma chamber takes place. In this way, mixing may have a minimal effect on the dissociated gas, if e.g. B. enters a process chamber.

In some embodiments, the system includes a gas mixing device. Various static flow mixers, such as screw mixers, knife mixers and cylindrical layer mixers, can be used to process downstream gas and plasma activated gas 134 to mix. Regarding 14 is the diameter in this embodiment 1404 from the area 164 bigger than the diameter 1408 the outlet 172 the plasma chamber. A sudden widening of the diameter of the flow passage due to a transition in diameter 1408 the outlet 172 on the diameter 1404 from the area 164 causes turbulence and gas recirculation in the area 164 given the activated gas flow 134 , The improved mixing by turbulence and recirculation improved the dissociation of the downstream gas.

15A and 15B Fig. 15 are cross-sectional views of a gas dissociation source (e.g., the source of the gas 1 or another source that does not use downstream processes to dissociate gas), including a source of supply 104 for gas dissociation, which realizes the invention. A body 200 the source of supply 104 gets to the outlet 172 the plasma chamber 108 connected (only part of the chamber 108 is shown for clarity of illustration). The plasma chamber 108 has a flange 1516 , An O-ring 1504 (or another suitable sealing mechanism) places a seal (eg, a vacuum seal) between the flange 1516 and a part 1500 the gas dissociation source ready. In some embodiments, the flange abuts 1516 against the body 200 , However, in some embodiments, the flange contacts 1516 not the body 200 , 15B FIG. 14 is an enlarged view of a portion of the gas dissociation source in FIG 15A ,

In this embodiment, the system has a feature 1512 on, that's a crack 1508 between the flange 1516 and the body 200 the source of supply 104 generated. The gap 1508 Decreases (eg, lowers or inhibits) the transport of the excited gases that are inside the body 200 the source of supply 104 located to the O-ring 1504 , In this embodiment, the gap is 1508 a long, narrow gap 1508 , In this embodiment, the flange 1516 Quartz on and the feature 1512 is an aluminum flange 1512 , The aluminum feature 1512 protects the quartz flange 1516 in front of the fluorine-containing gases that are inside the body part 200 the source of supply 104 to find oneself. In this embodiment, the feature limits 1512 also rubbing between the flange 1516 and the body 200 , In this way, particle production is reduced because of the flange 1516 not directly against the body 200 rubs. In addition, the life of the system (such as the O-ring 1504 and the flange 1516 ) extended.

As noted above, the gap is 1508 a long and narrow gap. In some embodiments, the length of the gap is at least one-tenth of one inch (2.54 millimeters). In other embodiments, the length of the gap is between about two-tenths of an inch (5.08 millimeters) and two inches (50.8 millimeters). In addition, the width of the gap (distance along the Y-axis) is narrow to limit the contamination. In some embodiments, the gap has a width between about one-tenth of one-time (0.0025 millimeters) and sixty mils (1.524 millimeters). In other embodiments, the gap has a width of between about one mil (0.025 millimeters) and twenty mils (0.508 millimeters).

In alternative embodiments of the invention, the use of a ring seal as the feature 1512 be considered. In one embodiment, the feature is 1512 a ring seal which is a soot-resistant material (that is, a material that does not significantly interfere with activated gas in the body 200 the injection source 104 interacts, like aluminum). The ring seal is compressed within its elastic deformation range and would have slight compression and smooth interface for scratching the flange 1516 (eg a quartz flange) is minimized.

In alternative embodiments of the invention, the use of alternative materia (eg sapphire, nitrides) to produce flange 1516 and feature 1512 considered.

In some embodiments, alternative sealing members or components may be used to seal between the flange 1516 and the part 1500 to provide the gas dissociation source. A ring seal could instead be between the flange 1516 and the part 1500 the gas supply source can be used.

In some embodiments, a seal is provided between alternative parts of the system (eg, between another part of the chamber 108 and a corresponding position of the gas dissociation system).

In some embodiments, the gas dissociation source has a purge gas inlet (not shown) between the O-ring 1504 and the gap 1508 or the characteristic 1512 is arranged. Purge gas can be introduced through purge gas inlet to the O-ring 1504 continue to protect.

16 FIG. 12 is an isometric cross-sectional view of a portion of a gas dissociation source, such as the gas dissociation source, shown in FIG 15A and 15B is shown. In this embodiment, the feature is 1512 an annular structure between the flange 1516 and the body 200 the source of supply 104 is arranged.

17 Figure 3 is a schematic illustration of a portion of a gas dissociation source 100 which embodies principles of the invention. The source 100 has a chamber 108 on. In this embodiment, the chamber 108 a toroidal chamber. The source 100 also has a supply source 104 on. The body 200 the source of supply 104 is from a flange 1516 the chamber 108 separated by a long, narrow gap (not shown for clarity of illustration). The gap is won by adding a feature 1512 between the flange 1516 and the body 200 arranges the supply source, similar to previously described.

In some embodiments, those associated with 15 - 17 described concepts are used in plasma systems, which are capable of the downstream dissociation of gases. In other embodiments, these concepts may be applied in plasma systems that accomplish gas dissociation without the use of downstream techniques.

18A and 18B Figure 11 are cross-sectional views of a gas dissociation source embodying the invention. The source contains a supply source 104 used in generating dissociated gases. A body 200 the source of supply 104 is at the outlet 172 the plasma chamber 108 connected (only part of the chamber 108 shown for clarity of illustration). The plasma chamber 108 has a flange 1816 , An O-ring 1804 (or another suitable sealing mechanism) provides a seal between the flange 1816 and one or more portions of the gas dissociation source.

In this embodiment, the O-ring 1804 a seal between a ring 1800 the source of supply 104 , a ring 1818 of the flange 1816 and a part of the supply source 104 to disposal. In this embodiment, the flange has 1816 a ring 1818 and a slot 1820 , The source of supply 104 has the ring 1800 , a shielding wall 1822 and a groove 1824 , The groove 1824 is between the ring 1800 and the shielding wall 1822 arranged (along the X-axis). 18B FIG. 11 is an enlarged view of a portion of the gas dissociation source shown in FIG 18A will be shown. As in 18B shown is the ring 1818 of the flange 1816 in the groove 1824 the source of supply 104 , The shielding wall 1822 the source of supply 104 is in the slot 1820 of the flange 1816 ,

In this embodiment, the system has a feature 1812 between the flange 1816 and the body 200 the source of supply 104 on. The shielding wall 1822 , Slot 1820 , Ring 1818 , Groove 1824 and ring 1800 in the combination define a gap 1808 , which generally detours between the position of the outlet 172 the chamber 108 and the O-ring 1804 Are defined. The presence of the gap 1808 and reduce the detour (for example, minimize or suppress), the transport of the excited gases that are inside the body 200 the source of supply 104 to the O-ring 1804 ,

18C FIG. 11 is an enlarged view of a portion of the gas dissociation source shown in FIG 18A which exemplifies dimensions for one embodiment of the invention. In this embodiment, the path length is along the detour from the position of the outlet 172 to the O-ring 1804 about 22.86 millimeters (0.9 inches). In this embodiment, distances a, b, and c are each about 0.381 millimeters (0.015 inches). Distance d is about 4.98 millimeters (0.9 inches). Distance e is about 4.32 millimeters (0.17 inches). Distance f is about 3.76 millimeters (0.148 inches). Distance g is about 8.20 mm (0.323 inches). Distance h is about 2.72 millimeters (0.107 inches). Distances I, J, and k are each about 0.508 mm (0.02 inches). In alternative embodiments of the invention, alternative geometries, shapes, Have features and dimensions, and yet z. As the transport of gases, which are in the body 200 the source of supply 104 Minimize and suppress the O-ring and simplify the process of assembling the system.

19 shows a three-dimensional perspective view of a part of the body 200 the source of supply 104 from 18A . 18B and 18C , The source of supply 104 has an outer ring 1800 , a shielding wall 1822 and a groove 1824 , The groove 1824 is between the ring 1800 and the shielding wall 1822 arranged.

20A and 20B are schematic illustrations of a toroidal plasma chamber, z. B. the plasma chamber 108 from 18A . 18B and 18C , The plasma chamber 108 has a ring 1818 , a flange 186 and a slot 1820 ,

The Experts will get variations, modifications and other implementations to think of what is described herein without the mind and to depart from the scope of the invention as claimed. Accordingly the invention should not be limited by the preceding illustrative description, but defined by the spirit and scope of the following claims be.

SUMMARY

One Method and device for activating and dissociating Gases indicates an activated gas with a plasma that is in a chamber. A downstream gas inlet is arranged with respect to an outlet of the chamber to make it the to enable activated gas Dissociation of a introduced through the gas inlet downstream gas to promote, wherein the dissociated downstream gas does not significantly interfere with an interior surface of the Chamber interacts.

Claims (42)

System for exciting gases, comprising: a remote plasma source for generating a plasma region in one Kammner, wherein the plasma generates an activated gas; a supply source for insertion of a downstream gas, with the activated gas outside to interact with the plasma region, the activated gas excitation promotes the downstream gas and wherein the stimulated downstream gas is not significant with a inner surface the chamber interacts; and a feature for providing a Gaps between an outlet flange of the chamber and the supply source. The system of claim 1, wherein the gap is a long, narrow gap is the transport of excited gases to one Gasket decreases between the outlet flange of the chamber and a portion of the system. The system of claim 1, wherein the gap is a length of has at least 2,54 millimeters. The system of claim 1, wherein the gap is a length between approximately 5,08 mm and 50,8 mm has. The system of claim 1, wherein the gap has a width between about Has 0.0025 mm and 1.524 mm. The system of claim 1, wherein the gap has a width between about 0.025 mm and 0.508 mm. The system of claim 1, wherein the gap is a ratio of Length too Width of about Has 1.66. The system of claim 1, wherein the gap is a ratio of Length too Width of about Has 3.33. The system of claim 1, wherein the length of the gap between about 2.54 millimeters and about 50.8 millimeters and the width of the gap is between about 0.0025 Millimeters and about 1,524 Millimeter is. The system of claim 1, wherein the feature is annular. The system of claim 1, wherein the feature is a flange is. The system of claim 1, wherein the feature is a feather seal is. The system of claim 1, wherein the feature is within its elastic deformation area compressed and extended can be. The system of claim 1, wherein said feature is aluminum, Sapphire or a nitride has. The system of claim 1, wherein the feature is the outlet flange the chamber of a body of supply source separates. The system of claim 1, wherein the feature is rubbing between the outlet flange and the body of the supply source limited. The system of claim 1, comprising Sealing mechanism between the outlet flange and the supply source. The system of claim 1, wherein the sealing mechanism has an O-ring. The system of claim 1, wherein the sealing mechanism having a feather seal. A method of exciting gases, comprising: Produce an activated gas with a plasma in a chamber; arrange a downstream gas inlet with respect to an outlet of the chamber, to allow the activated gas to Dissociation of a downstream gas introduced through the downstream gas inlet, to promote, the dissociated downstream gas is not significant with a inner surface the chamber interacts; and Arranging a feature by one To provide clearance between an outlet flange of the chamber and a body, which has the downstream gas inlet. The method of claim 20, wherein the gap is a long, narrow gap is the transport of excited gases reduced to a seal between the outlet flange of the Chamber and a section of the system is arranged. The method of claim 20, wherein the feature is annular. The method of claim 20, wherein the feature is a Flange is. The method of claim 20, wherein the feature is a Feather seal is. The method of claim 20, wherein the feature is within its elastic deformation area compressed and extended can be. The method of claim 20, wherein the feature is the Outlet flange of the chamber of a body of the supply source separates. The method of claim 20, wherein the feature is rubbing between the outlet flange and the body of the supply source limited. The method of claim 20, comprising generating a vacuum seal between the outlet flange and the supply source. A method of dissociating gases, comprising: Produce an activated gas with a plasma in a chamber; arrange a downstream gas inlet with respect to an outlet of the chamber, to allow the activated gas to Dissociation of a introduced through the gas inlet downstream gas to promote, wherein the dissociated downstream gas does not significantly interfere with an interior surface of the Chamber interacts; and Placing a feature around a gap between an outlet flange of the chamber and a body, which has the downstream gas inlet. System for exciting gases, comprising: a remote plasma source for generating a plasma region in one Chamber wherein the plasma generates an activated gas; and a supply source for insertion of a downstream gas, with the activated gas outside to interact with the plasma region, the activated gas excitation promotes the downstream gas and wherein the stimulated downstream gas is not significant with a inner surface the chamber interacts. The system of claim 30, wherein excitation of the downstream gas Dissociate the downstream gas has. The system of claim 30, comprising a barrier, which is arranged at an outlet of the chamber to erosion of or To reduce deposition on the chamber. The system of claim 32, wherein the lock is at least partially disposed within the chamber. The system of claim 32, wherein the lock is at least partially disposed within an outlet passage of the chamber is. The system of claim 30, comprising a barrier, which is disposed within an outlet passage of the chamber. The system of claim 30, wherein the chamber is quartz having. The system of claim 36, wherein the chamber is a toroidal chamber is. The system of claim 30, wherein the plasma source a toroid plasma source is. The system of claim 30, comprising a mixer around downstream gas and to mix activated gas. The system of claim 39, wherein the mixer a static flow mixer, a screw mixer, a blade mixer or a cylindrical layer mixer. The system of claim 30, comprising a purge gas inlet. The system of claim 41, wherein the cleaning gas inlet disposed between a port of the chamber and an inlet of the supply source is.