DE112004000735D2 - Control of the thickness of a disc composite and test structure for erosion control - Google Patents

Control of the thickness of a disc composite and test structure for erosion control

Info

Publication number
DE112004000735D2
DE112004000735D2 DE112004000735T DE112004000735T DE112004000735D2 DE 112004000735 D2 DE112004000735 D2 DE 112004000735D2 DE 112004000735 T DE112004000735 T DE 112004000735T DE 112004000735 T DE112004000735 T DE 112004000735T DE 112004000735 D2 DE112004000735 D2 DE 112004000735D2
Authority
DE
Germany
Prior art keywords
control
thickness
test structure
disc composite
erosion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112004000735T
Other languages
German (de)
Inventor
Ralf Lerner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Priority claimed from PCT/DE2004/000801 external-priority patent/WO2004095567A1/en
Publication of DE112004000735D2 publication Critical patent/DE112004000735D2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
DE112004000735T 2003-04-17 2004-04-16 Control of the thickness of a disc composite and test structure for erosion control Ceased DE112004000735D2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2003117747 DE10317747B3 (en) 2003-04-17 2003-04-17 Process for control of thickness reduction of semiconductor elements involves use of a simple test structure with a series of trenches of different widths formed in a plate
PCT/DE2004/000801 WO2004095567A1 (en) 2003-04-17 2004-04-16 Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material

Publications (1)

Publication Number Publication Date
DE112004000735D2 true DE112004000735D2 (en) 2006-02-09

Family

ID=32520186

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2003117747 Expired - Fee Related DE10317747B3 (en) 2003-04-17 2003-04-17 Process for control of thickness reduction of semiconductor elements involves use of a simple test structure with a series of trenches of different widths formed in a plate
DE112004000735T Ceased DE112004000735D2 (en) 2003-04-17 2004-04-16 Control of the thickness of a disc composite and test structure for erosion control

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2003117747 Expired - Fee Related DE10317747B3 (en) 2003-04-17 2003-04-17 Process for control of thickness reduction of semiconductor elements involves use of a simple test structure with a series of trenches of different widths formed in a plate

Country Status (1)

Country Link
DE (2) DE10317747B3 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006046869B4 (en) * 2006-10-02 2012-11-29 Infineon Technologies Ag Method and apparatus for manufacturing a semiconductor device and semiconductor wafers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19741971A1 (en) * 1997-09-23 1999-04-01 Siemens Ag Direct-wafer-bond silicon-oxide-silicon substrate production
US5972787A (en) * 1998-08-18 1999-10-26 International Business Machines Corp. CMP process using indicator areas to determine endpoint
KR20000040104A (en) * 1998-12-17 2000-07-05 김영환 Method for manufacturing silicon-on-insulator wafer
US6515826B1 (en) * 2000-08-14 2003-02-04 International Business Machines Corporation Magnetic head induction coil fabrication method utilizing aspect ratio dependent etching
US6514858B1 (en) * 2001-04-09 2003-02-04 Advanced Micro Devices, Inc. Test structure for providing depth of polish feedback

Also Published As

Publication number Publication date
DE10317747B3 (en) 2004-07-22

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Legal Events

Date Code Title Description
8131 Rejection