DE1112583B - Process for the production of a capacitor with a formed dielectric cover layer and a semiconductor layer - Google Patents
Process for the production of a capacitor with a formed dielectric cover layer and a semiconductor layerInfo
- Publication number
- DE1112583B DE1112583B DEST16002A DEST016002A DE1112583B DE 1112583 B DE1112583 B DE 1112583B DE ST16002 A DEST16002 A DE ST16002A DE ST016002 A DEST016002 A DE ST016002A DE 1112583 B DE1112583 B DE 1112583B
- Authority
- DE
- Germany
- Prior art keywords
- insulating material
- semiconductor layer
- capacitor
- production
- lacquer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 12
- 239000003990 capacitor Substances 0.000 title claims description 11
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 15
- 239000003973 paint Substances 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 239000004922 lacquer Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical class [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000005871 repellent Substances 0.000 claims 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- IPJKJLXEVHOKSE-UHFFFAOYSA-L manganese dihydroxide Chemical compound [OH-].[OH-].[Mn+2] IPJKJLXEVHOKSE-UHFFFAOYSA-L 0.000 description 1
- OZOAXHQNOFIFGD-UHFFFAOYSA-N manganese(2+) oxygen(2-) Chemical class [O-2].[O-2].[Mn+2].[Mn+2] OZOAXHQNOFIFGD-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/032—Inorganic semiconducting electrolytes, e.g. MnO2
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
Verfahren zur Herstellung eines Kondensators mit einer formierten dielektrischen Deckschicht und einer Halbleiterschicht Die Erfindung bezieht sich auf ein Verfahren zur Herstellung eines Kondensators mit einer eine formierte dielektrische Deckschicht tragenden Elektrode und einer auf dieser durch Umsetzung gebildeten Halbleiterschicht. Zu dieser Gruppe von Kondensatoren zählt insbesondere der Tantalkondensator, bei dem der Anodenkörper aus gesintertem Tantalpulver besteht und als Träger für den Schichtaufbau dient, der im wesentlichen aus der dielektrischen Schicht, der Halbleiterschicht und der Abnahmeelektrode besteht.Method of manufacturing a capacitor with a formed dielectric cover layer and a semiconductor layer The invention relates to a method of manufacturing a capacitor having a formed dielectric Cover layer carrying electrode and one formed on this by reaction Semiconductor layer. This group of capacitors includes in particular the tantalum capacitor, in which the anode body consists of sintered tantalum powder and as a carrier for the layer structure is used, which consists essentially of the dielectric layer, the Semiconductor layer and the pick-up electrode.
Es ist schon vorgeschlagen worden, daß dieser grundsätzliche Schichtaufbau durch Zwischenschichten od. dgl. verbessert werden kann. Diese Schichten bedürfen aber im Zusammenhang mit der nachstehend beschriebenen Erfindung keiner weiteren Erläuterung, da die Erfindung selbst auf die Herstellung der Halbleiterschicht eines solchen Kondensators und damit zusammenhängende Fragen gerichtet ist.It has already been suggested that this basic layer structure can be improved by intermediate layers or the like. These layers need but no further in connection with the invention described below Explanation, since the invention itself is based on the production of the semiconductor layer of a such capacitor and related issues is addressed.
Bisher ist die Halbleiterschicht, beispielsweise aus Mangandioxyd bei Tantalkondensatoren, dadurch erzeugt worden, daß der Sinterkörper mit einer wäßrigen Lösung von Mangannitrat getränkt und dieses dann thermisch zu Mangandioxyd zersetzt wurde. Um das Tränken im Rahmen eines laufenden Fertigungsprozesses zu ermöglichen, wird der Sinterkörper in die wäßrige Lösung von Mangannitrat eingetaucht Die Erfahrungen haben gezeigt, daß dieses Verfahren wesentliche Nachteile besitzt, die zu einem hohen Ausschuß bei der Fertigung führen. Einer dieser Nachteile besteht darin, daß beim Eintauchen des Sinterkörpers in die Mangannitrat-Lösung, auch wenn das Eintauchen nur bis zu einer begrenzten Höhe erfolgt, mit anschließender thermischer Zersetzung zu Mangandioxyd ein Neben- oder sogar Kurzschluß zwischen der Zuleitung zum Sinterkörper (Anode) und der Halbleiterschicht schwer zu vermeiden ist, weil der Sinterkörper infolge seiner Porosität die Mangannitrat-Lösung schwammartig aufsaugt, so daß eine isolierende Brücke zwischen Anodenzuleitung und Halbleiterschicht nicht oder nur schlecht vorhanden ist.So far, the semiconductor layer, for example made of manganese dioxide in tantalum capacitors, produced in that the sintered body with a aqueous solution of manganese nitrate and this then thermally to manganese dioxide was decomposed. To allow the impregnation as part of an ongoing manufacturing process allow, the sintered body is immersed in the aqueous solution of manganese nitrate Experience has shown that this process has significant disadvantages, which lead to a high level of waste in production. One of these drawbacks is there in that when the sintered body is immersed in the manganese nitrate solution, even if the immersion takes place only up to a limited height, with subsequent thermal Decomposition to manganese dioxide a secondary or even short circuit between the supply line to the sintered body (anode) and the semiconductor layer is difficult to avoid because the sintered body absorbs the manganese nitrate solution like a sponge due to its porosity, so that an insulating bridge between anode lead and semiconductor layer is not or is only poorly available.
Es wurden nun Überlegungen darüber angestellt, wie dieser Mangel beseitigt werden kann. Erwägungen in der Richtung, ein begrenztes Gebiet zwischen der Zuleitung zum Sinterkörper (Anode) und der Halbleiterschicht vor ihrer Herstellung durch eine Isolierschicht, z. B. einen Lacküberzug, abzudecken, scheitern an der Tatsache, daß die thermische Zersetzung des Mangannitrates mindestens an eine Temperatur von 350 bis 400° C gebunden ist. Es ist aber kein Lack bekannt, der bis zu diesen hohen Temperaturen beständig ist, so daß dieser Weg zunächst nicht in Frage zu kommen schien.Consideration has now been given to how this deficiency can be remedied can be. Considerations in the direction of having a limited area between the feed line to the sintered body (anode) and the semiconductor layer before their production by a Insulating layer, e.g. B. to cover a lacquer coating, fail due to the fact that the thermal decomposition of the manganese nitrate at least to a temperature of 350 to 400 ° C is bound. But there is no known paint that can reach this high level Temperatures is stable, so that this route is initially out of the question seemed.
Weitere Überlegungen des Erfinders führten nun zu der Erkenntnis, daß die Chemie auch noch andere Möglichkeiten zur Erzeugung von Mangandioxyd aus Mangan(II)-Salzen bietet, bei denen mit einer wesentlich niedrigeren Temperatur gearbeitet werden kann. Das von dem Erfinder ausgewählte Verfahren besteht darin, daß in an sich bekannter Weise von einer Mangan(II)-Salzlösung, z. B. Mangannitrat, ausgegangen wird, das dann aber zunächst eine Behandlung mit NH.- Gas erfolgt, die bewirkt, daß sich eine gallertartige Masse von Manganhydroxyd oder Manganoxyhydraten abscheidet. Durch anschließendes Erhitzen dieser Verbindungen im Sauerstoffstrom kann diese gallertartige Masse bei einer Temperatur von etwa 150 bis 250° C, also bei einer Temperatur, die wesentlich unter der des üblichen Verfahrens liegt, zu. Mangandioxyd aufoxydiert werden. Die Versuche haben gezeigt, daß sich mit Hilfe dieses Verfahrens eine festhaftende, einwandfreie Braunsteinschicht erzielen läßt.Further considerations of the inventor now led to the realization that that chemistry also offers other possibilities for the production of manganese dioxide Manganese (II) salts offers at those with a much lower temperature can be worked. The method chosen by the inventor consists in that in a known manner of a manganese (II) salt solution, for. B. Manganese Nitrate, is assumed, but then first a treatment with NH gas takes place, the causes a gelatinous mass of manganese hydroxide or manganese oxyhydrates separates. By then heating these compounds in a stream of oxygen can this gelatinous mass at a temperature of about 150 to 250 ° C, that is at a temperature well below that of the usual process. Manganese dioxide are oxidized. The experiments have shown that with the help this process can achieve a firmly adhering, flawless layer of manganese dioxide.
Die mit dem nach derErfindung ausgewähltenVerfahren verbundene niedrige Arbeitstemperatur ermöglicht es nun andererseits, den Gedanken der Isolierung der Umgebung der Anodenzuleitung zu verwirklichen. So wird erfindungsgemäß ein begrenzter Bereich um die Anodenleitung und diese selbst mit Hilfe eines Lackes oder Isolierstoffes isoliert und hierauf die Halbleiterschicht bei einer Temperatur gebildet, bei der der Isolierstoff noch beständig ist. Diese Isolierung erfolgt durch Aufbringen eines Lackes oder Aufsintern eines isolierenden Materials auf die zu isolierenden Stellen des Sinterkörpers, insbesondere auf die Stirnseite des Sinterkörpers, die von der Anodenzuleitung durchsetzt wird. Der Erfinder hat erkannt, daß aber auch nicht jeder Lack-bzw. Isolierstoff für den angegebenen Zweck verwendbar ist, sondern daß diese Stoffe gewisse Eigenschaften besitzen müssen. Der Lack bzw. der aufzuschmelzende Isolierstoff darf selbst nicht porös sein, nachdem er ausgehärtet bzw. aufgeschmolzen ist, und muß außerdem die Fähigkeit besitzen, nur bis zu einer begrenzten Tiefe - bis- dahin aber einwandfrei - die Poren des Sinterkörpers zu verschließen. Eine dritte Eigenschaft, die de Lack bzw. Isolierstoff haben sollte, ist die Eigenschaft des Wasserabstoßens. Ein die vorstehenden Bedingungen erfüllender Isolierstoff ist z. B. der Silikon-Kautschuk, der in Form einer Lösung oder Emulsion aufgetragen und dann durch Anwendung von Wärme ausgehärtet wird.The low associated with the method selected according to the invention Working temperature makes it possible on the other hand, the idea of isolation of the Realize around the anode lead. Thus, according to the invention, it becomes a limited one Area around the anode lead and this itself with the help of a varnish or insulating material insulated and then formed the semiconductor layer at a temperature at which the insulating material is still resistant. This isolation is done by Applying a varnish or sintering an insulating material on the to insulating points of the sintered body, in particular on the end face of the sintered body, which is penetrated by the anode lead. The inventor realized that but also not every paint or. Insulating material can be used for the specified purpose, but that these substances must have certain properties. The paint or the The insulating material to be melted must not itself be porous after it has hardened or melted, and must also have the ability to only up to one limited depth - until then - but perfectly - the pores of the sintered body close. A third property that the paint or insulating material should have, is the property of water repellency. One that fulfills the above conditions Insulating material is z. B. the silicone rubber, which is in the form of a solution or emulsion applied and then cured by applying heat.
Die Erfindung wird an einem Ausführungsbeispiel beschrieben.The invention is described using an exemplary embodiment.
Die Zeichnung zeigt einen Kondensator des üblichen Schichtaufbaus mit einem Sinterkörper aus Tantal1, der Anodenzuleitung 2, der Kathodenzuleitung 3, der dielektrischen Schicht 4 und der Graphitschicht 7. Die Kathode 5 besteht aus einer aufgespritzten Metallschicht. Der Bereich um den Zuleitungsdraht zum Sinterkörper (Anode) ist mit einem Isolierstoff 6 abgedeckt, was in Verbindung mit dem ausgewählten Verfahren zur Herstellung der in der Figur nicht sichtbaren Mangandioxydschicht, die auf der dielektrischen Schicht 4 aus Tat 05 entsteht, einwandfreie Tantalkondensatoren ergibt.The drawing shows a capacitor with the usual layer structure with a sintered body made of tantalum 1, the anode lead 2, the cathode lead 3, the dielectric layer 4 and the graphite layer 7. The cathode 5 consists from a sprayed-on metal layer. The area around the lead wire to the sintered body (Anode) is covered with an insulating material 6, which is in conjunction with the selected Process for the production of the manganese dioxide layer not visible in the figure, which arises on the dielectric layer 4 from Tat 05, flawless tantalum capacitors results.
Im Sinne der Erfindung liegt es, nach der Erzeugung der Mangandioxydschicht den oberen Teil des aufgebrachten Lack- bzw. Isolierstoffkegels 6 abzuschneiden und zu entfernen, um den Anodendraht für das weitere Fertigungsverfahren in größerer Länge bereitszustellen.It is within the meaning of the invention after the production of the manganese dioxide layer Cut off the upper part of the applied lacquer or insulating material cone 6 and remove to the anode wire for the further manufacturing process in larger Length to be provided.
Claims (6)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST16002A DE1112583B (en) | 1960-01-16 | 1960-01-16 | Process for the production of a capacitor with a formed dielectric cover layer and a semiconductor layer |
| CH29361A CH407328A (en) | 1960-01-16 | 1961-01-10 | Method of manufacturing a solid electrolyte capacitor |
| BE599109A BE599109R (en) | 1960-01-16 | 1961-01-16 | Elektrische condensator. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST16002A DE1112583B (en) | 1960-01-16 | 1960-01-16 | Process for the production of a capacitor with a formed dielectric cover layer and a semiconductor layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1112583B true DE1112583B (en) | 1961-08-10 |
Family
ID=7456904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEST16002A Pending DE1112583B (en) | 1960-01-16 | 1960-01-16 | Process for the production of a capacitor with a formed dielectric cover layer and a semiconductor layer |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE599109R (en) |
| CH (1) | CH407328A (en) |
| DE (1) | DE1112583B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1157707B (en) * | 1962-10-23 | 1963-11-21 | Telefunken Patent | Process for the production of electrolytic capacitors |
| DE4114756A1 (en) * | 1991-05-06 | 1992-12-10 | Reiner Hoehne | Wet electrolytic capacitor mfr. - using glass housing between capacitor body and plastics sheath, useful in automobile electronics |
| DE10120693A1 (en) * | 2001-04-27 | 2003-05-22 | Siemens Ag | Electrical or electronic component such as electrolytic capacitor, has insulating sleeve provided on one of connecting pins to prevent polarity reversal |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2834454C3 (en) * | 1978-08-05 | 1981-04-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Process for the production of an organic protective layer on a valve metal sintered anode for solid electrolytic capacitors |
-
1960
- 1960-01-16 DE DEST16002A patent/DE1112583B/en active Pending
-
1961
- 1961-01-10 CH CH29361A patent/CH407328A/en unknown
- 1961-01-16 BE BE599109A patent/BE599109R/en active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1157707B (en) * | 1962-10-23 | 1963-11-21 | Telefunken Patent | Process for the production of electrolytic capacitors |
| DE4114756A1 (en) * | 1991-05-06 | 1992-12-10 | Reiner Hoehne | Wet electrolytic capacitor mfr. - using glass housing between capacitor body and plastics sheath, useful in automobile electronics |
| DE10120693A1 (en) * | 2001-04-27 | 2003-05-22 | Siemens Ag | Electrical or electronic component such as electrolytic capacitor, has insulating sleeve provided on one of connecting pins to prevent polarity reversal |
Also Published As
| Publication number | Publication date |
|---|---|
| BE599109R (en) | 1961-07-17 |
| CH407328A (en) | 1966-02-15 |
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