DE1077787C2 - - Google Patents

Info

Publication number
DE1077787C2
DE1077787C2 DE1958D0028397 DED0028397A DE1077787C2 DE 1077787 C2 DE1077787 C2 DE 1077787C2 DE 1958D0028397 DE1958D0028397 DE 1958D0028397 DE D0028397 A DED0028397 A DE D0028397A DE 1077787 C2 DE1077787 C2 DE 1077787C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1958D0028397
Other languages
German (de)
Other versions
DE1077787B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DED28397A priority Critical patent/DE1077787B/de
Publication of DE1077787B publication Critical patent/DE1077787B/de
Application granted granted Critical
Publication of DE1077787C2 publication Critical patent/DE1077787C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DED28397A 1958-06-26 1958-06-26 Axialsymmetrischer Transistor, bei dem das aufgebrachte Dotierungsmaterial einer flaechenhaften Legierungselektrode von einer draht-foermigen Elektrode durchsetzt ist Granted DE1077787B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DED28397A DE1077787B (de) 1958-06-26 1958-06-26 Axialsymmetrischer Transistor, bei dem das aufgebrachte Dotierungsmaterial einer flaechenhaften Legierungselektrode von einer draht-foermigen Elektrode durchsetzt ist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED28397A DE1077787B (de) 1958-06-26 1958-06-26 Axialsymmetrischer Transistor, bei dem das aufgebrachte Dotierungsmaterial einer flaechenhaften Legierungselektrode von einer draht-foermigen Elektrode durchsetzt ist

Publications (2)

Publication Number Publication Date
DE1077787B DE1077787B (de) 1960-03-17
DE1077787C2 true DE1077787C2 (ja) 1960-09-08

Family

ID=7039647

Family Applications (1)

Application Number Title Priority Date Filing Date
DED28397A Granted DE1077787B (de) 1958-06-26 1958-06-26 Axialsymmetrischer Transistor, bei dem das aufgebrachte Dotierungsmaterial einer flaechenhaften Legierungselektrode von einer draht-foermigen Elektrode durchsetzt ist

Country Status (1)

Country Link
DE (1) DE1077787B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1161356B (de) * 1960-06-03 1964-01-16 Rudolf Rost Dr Ing Schaltender und schwingender Unipolartransistor und Oszillatorschaltung mit einem solchen Transistor

Also Published As

Publication number Publication date
DE1077787B (de) 1960-03-17

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