DE1075237B - Process for producing the photosensitive layer of crystalline selenium for barrier photo elements or photoresistors - Google Patents
Process for producing the photosensitive layer of crystalline selenium for barrier photo elements or photoresistorsInfo
- Publication number
- DE1075237B DE1075237B DENDAT1075237D DE1075237DA DE1075237B DE 1075237 B DE1075237 B DE 1075237B DE NDAT1075237 D DENDAT1075237 D DE NDAT1075237D DE 1075237D A DE1075237D A DE 1075237DA DE 1075237 B DE1075237 B DE 1075237B
- Authority
- DE
- Germany
- Prior art keywords
- producing
- photosensitive layer
- selenium
- photoresistors
- liquids
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 12
- 229910052711 selenium Inorganic materials 0.000 title claims description 12
- 239000011669 selenium Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 7
- 230000004888 barrier function Effects 0.000 title description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 6
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000001476 alcoholic effect Effects 0.000 claims description 2
- 238000005496 tempering Methods 0.000 claims description 2
- 238000004821 distillation Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011874 heated mixture Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/103—Conversion of the selenium or tellurium to the conductive state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
DEUTSCHESGERMAN
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung der lichtempfindlichen Schicht aus kristallinem Selen für Sperrschichtphotoelemente oder Photowiderstände. The invention relates to a method for producing the photosensitive layer from crystalline Selenium for barrier photo elements or photoresistors.
Es sind bereits Verfahren zur Herstellung äußerst lichtempfindlicher Selenzellen unter Verwendung von mit Silber als Katalysator versetztem und auf etwa 200° C erhitztem Selen bekannt. Das amorphe Selen wird der Einwirkung einer Chinolinlösung ausgesetzt und nach dem Silberzusatz auf die erwähnten 200° C erhitzt. Das erhitzte Gemisch wird äußerst langsam, beispielsweise in 2 bis 3 Tagen, abgekühlt.There are already methods of making extremely light-sensitive selenium cells using Selenium mixed with silver as a catalyst and heated to around 200 ° C is known. The amorphous selenium is exposed to the action of a quinoline solution and after the addition of silver to the mentioned 200 ° C heated. The heated mixture is cooled extremely slowly, for example in 2 to 3 days.
Nach der Erfindung soll die zeitraubende thermische Behandlung in Wegfall kommen und die gewünschte Kristallisation nur durch Einwirkung der genannten chemischen Mittel hervorgerufen werden. Erreicht wird das erfindungsgemäß dadurch, daß die auf eine Grundplatte aufgetragene Schicht aus amorphem Selen für die Dauer von 15 Minuten bis 24 Stunden in Pyridin, alkoholischer Hydrochinonlösung oder Anilin getaucht oder mit diesen Flüssigkeiten benetzt wird. Die Reste dieser Flüssigkeiten werden anschließend mit destilliertem Wasser oder mit dem jeweiligen Lösungsmittel abgespült. Es liegt im Rahmen der Erfindung, die amorphe Selenschicht vor der Behandlung mit den anorganischen Flüssigkeiten einer Temperung im Temperaturbereich von HO bis 140° C während eines Zeitraumes von 1 bis 4 Stunden zu unterziehen.According to the invention, the time-consuming thermal treatment should be eliminated and the desired one Crystallization can only be caused by the action of the chemical agents mentioned. This is achieved according to the invention in that the amorphous layer applied to a base plate Selenium for a period of 15 minutes to 24 hours in pyridine, alcoholic hydroquinone solution or Aniline is immersed or wetted with these liquids. The remnants of these fluids are subsequently used rinsed with distilled water or with the respective solvent. It's in the frame of the invention, the amorphous selenium layer before treatment with the inorganic liquids Tempering in the temperature range from HO to 140 ° C for a period of 1 to 4 hours undergo.
Die Stoffe, die den Kristallisationsvorgang von amorphem Selen günstig beeinflussen, sind z. B. Piperidin, Triethylamin, Hexamethylenamiii u. a. (vgl. zum Beispiel Saunders, T- Phys. Chem., 4, 1900, S. 423).The substances that favorably influence the crystallization process of amorphous selenium are, for. B. piperidine, Triethylamine, hexamethyleneamiii, and others. (see, for example, Saunders, T-Phys. Chem., 4, 1900, P. 423).
Für die vorstehend angeführten Behandlungsmittel gelten beispielsweise folgende Regeln:For example, the following rules apply to the treatment agents listed above:
1. Die Photozelle wird während einer Dauer von 30 Minuten bis 24 Stunden in Pyridin getaucht oder mit demselben benetzt, worauf dieselbe mit destilliertem Wasser und Alkohol abgespült wird. Sodann wird an der Luft getrocknet.1. The photocell is immersed in pyridine for a period of 30 minutes to 24 hours or wetted with the same, whereupon the same is rinsed with distilled water and alcohol. It is then air-dried.
2. Der gleiche Vorgang läßt sich während einer Dauer von 15 Minuten bis 12 Stunden mit einer 0,01- bis 0,2°/oigen Hydrochinonlösung in Alkohol mit nachträglicher Abspülung mit Alkohol ausführen.2. The same process can be carried out for a period of 15 minutes to 12 hours with a 0.01 to Carry out a 0.2% hydroquinone solution in alcohol with subsequent rinsing with alcohol.
3. Die Photozelle wird während einer Dauer von 15 Minuten bis 6 Stunden in Anilinlösung getaucht, sodann in reinem Lösungsmittel abgespült und getrocknet. 3. The photocell is immersed in aniline solution for a period of 15 minutes to 6 hours, then rinsed in pure solvent and dried.
Nach dieser Einwirkung, welche die thermische Behandlung vollkommen oder teilweise ersetzt, wird die
Photozelle weiterbehandelt, das ist durch Ausbildung einer passenden Sperrschicht, z. B. durch Auftragung
von Kadmium mittels kathodischer Bestäubung und Verfahren zur Herstellung
der lichtempfindlichen SchichtAfter this action, which completely or partially replaces the thermal treatment, the photocell is treated further. B. by application of cadmium by means of cathodic dusting and methods of manufacture
the photosensitive layer
aus kristallinem Selenfrom crystalline selenium
für Sperrschichtphotoelementefor barrier photo elements
oder Photowiderständeor photoresistors
Anmelder:Applicant:
CKD Modfany, närodni podnik,
Modfany, Prag (Tschechoslowakei)CKD Modfany, närodni podnik,
Modfany, Prague (Czechoslovakia)
Vertreter: Dipl.-Ing. B. Wehr, Dipl.-Ing. H. Seiler,Representative: Dipl.-Ing. B. Wehr, Dipl.-Ing. H. Seiler,
Berlin-Grunewald, Lynarstr. 1,Berlin-Grunewald, Lynarstr. 1,
Dipl.-Ing. H. Stehmann und Dipl,-Ing. B. Richter,Dipl.-Ing. H. Stehmann and Dipl, -Ing. B. Judge,
Nürnberg 2, PatentanwälteNuremberg 2, patent attorneys
Beanspruchte Priorität:
Tschechoslowakei vom 14. November 1956Claimed priority:
Czechoslovakia from November 14, 1956
Ludvik Kucera, Kyje (Tschechoslowakei),
ist als Erfinder genannt wordenLudvik Kucera, Kyje (Czechoslovakia),
has been named as the inventor
Erstellung der lichtdurchlässigen Elektrode, z. B. aus Gold, fertiggestellt. Das Verfahren läßt sich auch für photoempfindliche Selen widerstände anwenden.Creation of the translucent electrode, e.g. B. made of gold, finished. The procedure can also be used for Use photosensitive selenium resistors.
Die auf die vorstehend beschriebene Weise bearbeiteten Photozellen ergeben um 50% größere Photoströme als Photozellen ohne chemische Behandlung, und außerdem ist die Produktion gleichmäßiger.The photocells processed in the manner described above result in 50% greater photocurrents than photocells without chemical treatment, and also the production is more uniform.
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS357483X | 1956-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1075237B true DE1075237B (en) | 1960-02-11 |
Family
ID=5452458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DENDAT1075237D Pending DE1075237B (en) | 1956-11-14 | Process for producing the photosensitive layer of crystalline selenium for barrier photo elements or photoresistors |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE562353A (en) |
| CH (1) | CH357483A (en) |
| DE (1) | DE1075237B (en) |
| FR (1) | FR1185400A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE304261C (en) * |
-
0
- BE BE562353D patent/BE562353A/xx unknown
- DE DENDAT1075237D patent/DE1075237B/en active Pending
-
1957
- 1957-11-13 CH CH357483D patent/CH357483A/en unknown
- 1957-11-14 FR FR1185400D patent/FR1185400A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE304261C (en) * |
Also Published As
| Publication number | Publication date |
|---|---|
| CH357483A (en) | 1961-10-15 |
| FR1185400A (en) | 1959-07-31 |
| BE562353A (en) | 1900-01-01 |
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