DE1044288B - Method for reducing the noise and / or the temperature coefficient in semiconductor arrangements, for example rectifiers or transistors, also with tip electrodes or the like. - Google Patents
Method for reducing the noise and / or the temperature coefficient in semiconductor arrangements, for example rectifiers or transistors, also with tip electrodes or the like.Info
- Publication number
- DE1044288B DE1044288B DES45228A DES0045228A DE1044288B DE 1044288 B DE1044288 B DE 1044288B DE S45228 A DES45228 A DE S45228A DE S0045228 A DES0045228 A DE S0045228A DE 1044288 B DE1044288 B DE 1044288B
- Authority
- DE
- Germany
- Prior art keywords
- noise
- semiconductor
- transistors
- tip electrodes
- temperature coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 5
- 239000013078 crystal Substances 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 235000013619 trace mineral Nutrition 0.000 claims description 2
- 239000011573 trace mineral Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013020 steam cleaning Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
Verfahren zur Verringerung des Rauschens und/oder des Temperaturkoeffizienten in Halbleiteranordnungen, beispielsweise Gleichrichtern oder Transistoren auch mit Spitzenelektroden od. dgl. Bekanntlich ist das Rauschen in Halbleitern um mehrere Größenordnungen stärker als in Metallen und beruht zum Teil auf anderen Ursachen. Besonders störend ist das Rauschen bei Halbleiteranordnungen mit Spitzkontakten, vorzugsweise in Richtleitern und Transistoren. Aber auch bei Flächengleichrichtern und Flächentransistoren sowie anderen Halbleiteranordnungen mit Übergängen zwischen Zonen unterschiedlichen Leitungstypus, beispielsweise pn-Übergängen, oder mit Übergängen zu Intrinsiczonen sowie in magnetisch und/oder elektrisch steuerbaren Halbleiterkörpern, vorzugsweise widerständen, mit oder ohne Zonen unterschiedlichen Leitungstypus und in mit oder ohne Vorspannung betriebenen Photozellen ist die Rauscheigenschaft störend.Method of reducing the noise and / or the temperature coefficient in semiconductor arrangements, for example rectifiers or transistors also with Tip electrodes or the like. It is known that the noise in semiconductors is several Orders of magnitude stronger than in metals and is partly due to other causes. The noise is particularly annoying in semiconductor arrangements with pointed contacts, preferably in directional ladders and transistors. But also with surface rectifiers and junction transistors and other semiconductor arrangements with junctions between Zones of different line types, for example pn junctions, or with junctions to intrinsic zones and in magnetically and / or electrically controllable semiconductor bodies, preferably resistors, with or without zones of different line types and In photocells operated with or without bias voltage, the noise property is disruptive.
Die der Erfindung zugrunde liegenden theoretischen und experimentellen Untersuchungen legen die Vermutung nahe, daß das Rauschen mindestens wesentlich durch Oberflächenströme längs der Oberfläche des Halbleiterkristalls, insbesondere Einkristalls, bedingt ist, welche besonders in der Nähe von Übergängen zwischen Zonen unterschiedlichen Leitungstypus, beispielsweise pn-Übergängen, und/oder in der Umgebung einer Kontaktspitze auftreten. Dies dürfte, mindestens zum Teil, daher rühren, daß auf der Halbleiteroberfläche ein- oder zweifach ionisierte Atome der umgebenden Atmosphäre, insbesondere Sauerstoffionen, angelagert sind. Durch Injektionen der an die Ionen angelagerten Elektronen in den an der Halbleiteroberfläche liegenden Oberflächenstrom vom p-Typ - bestehe dieser aus Majoritätsträgern oder Minoritätsträgern - wird dieser zu statistischen Schwankungen angeregt, welche für das Rauschen mindestens teilweise verantwortlich sein dürften.The theoretical and experimental on which the invention is based Research suggests that the noise is at least substantial by surface currents along the surface of the semiconductor crystal, in particular Single crystal, which is conditional, especially in the vicinity of transitions between Zones of different line types, for example pn junctions, and / or in occur in the vicinity of a contact tip. This is likely, at least in part, therefore stir that on the semiconductor surface once or twice ionized atoms of the surrounding atmosphere, in particular oxygen ions, are deposited. By injections of the electrons attached to the ions in those lying on the semiconductor surface P-type surface current - let this consist of majority or minority carriers - this is stimulated to statistical fluctuations, which for the noise at least may be partly responsible.
Die Erfindung bezieht sich daher auf ein Verfahren zur Verringerung des Rauschens und/oder des Temperaturkoeffizienten in Halbleiteranordnungen, beispielsweise Gleichrichtern, Transistoren auch mit Spitzenelektroden od. dgl.The invention therefore relates to a method for reducing the noise and / or the temperature coefficient in semiconductor devices, for example Rectifiers, transistors also with tip electrodes or the like.
Gemäß der Erfindung wird die hochgradig gereinigte Oberfläche des Halbleiterkristalls bei gleichzeitiger Einwirkung einer aus Sauerstoff oder Edelgas bestehenden Gasatmosphäre geeigneten Druckes mindestens in der Nähe bzw. Umgebung von pn-Übergängen, z. B. auch an Spitzenelektroden mit einer den Bindungseigenschaften und/oder der Dotierung des Kristallgitters angepaßten kurzwelligen Bestrahlung des UV-Gebietes, des Röntgen-Gebietes oder des zwischen ihnen liegenden Stahlungsgebietes bestrahlt. Durch die Bestrahlung wird, wie Versuche gezeigt haben, das Rauschen herabgesetzt, was nach den vorangehenden Betrachtungen vermutlich durch eine Verringerung der Anzahl der Rauschzentren auf der Halbleiterkristalloberfläche bedingt ist. Diese Wirkung kann vielleicht dadurch erklärt werden, daß durch die Strahlung in Kristallgitter an der Halt)-leiteroberfläche ein Photoeffekt ausgelöst wird, welcher die adsorbierten Sauerstoffionen oder -atome in einen energetisch günstigen Zustand versetzt, wobei eine beträchtliche Anzahl dieser Adsorptionsstellen die Funktion als Rauschzentrum verliert. Gleichzeitig wird auch der Temperaturkoeffizient herabgesetzt.According to the invention, the highly cleaned surface of the Semiconductor crystal with simultaneous action of one of oxygen or noble gas existing gas atmosphere of suitable pressure at least in the vicinity or environment of pn junctions, e.g. B. also on tip electrodes with one of the binding properties and / or the doping of the crystal lattice adapted short-wave irradiation of the UV area, the X-ray area or the radiation area between them irradiated. As experiments have shown, the irradiation reduces the noise reduced, which, according to the previous considerations, is presumably due to a reduction depends on the number of noise centers on the semiconductor crystal surface. These Effect can perhaps be explained by the fact that through the radiation in crystal lattices a photoelectric effect is triggered on the holding) conductor surface, which the adsorbed Oxygen ions or atoms put in an energetically favorable state, whereby a considerable number of these adsorption sites function as noise centers loses. At the same time, the temperature coefficient is also reduced.
Es ist an sich bereits vorgeschlagen worden, die Oberfläche von Halbleiterkristallgleichrichtern, vorzugsweise Germaniumspitzengleichrichtern, mit UV-Licht zu bestrahlen zwecks Verbesserung der Richteigenschaften. Die Tatsache, daß sich durch eine solche Bestrahlung auch das Rauschen und der Temperaturkoeffizient herabsetzen läßt, ist jedoch bisher nicht bekannt gewesen.It has already been proposed that the surface of semiconductor crystal rectifiers, preferably germanium tip rectifiers, to be irradiated with UV light for the purpose of improvement the directional properties. The fact that through such irradiation too can reduce the noise and the temperature coefficient, but is not yet been known.
Gemäß einer besonderen Ausbildung des Erfindungsgedankens läßt sich für jede Halbleiteranordnung je nach dem verwendeten Halbleitermaterial, sei es Silizium, Germanium, eine Legierung oder Verbindung von Elementen der IV. Gruppe untereinander oder eine Legierung bzw. Verbindung von Elementen der III. und V., II. und VI., I. und VII. Gruppe des Periodischen Systems oder deren Mehrfachverbindungen oder Mischkristallen, eine optimale Bestrahlung bezüglich Bestrahlungsdauer, Intensität und/oder Wellenlänge bzw. Spektrum der Bestrahlung ermitteln.According to a special embodiment of the inventive concept can for each semiconductor arrangement depending on the semiconductor material used, be it Silicon, germanium, an alloy or compound of elements of group IV with each other or an alloy or combination of elements of III. and V., II. And VI., I. and VII. Group of the Periodic Table or their multiple compounds or mixed crystals, an optimal irradiation in terms of irradiation duration, intensity and / or determine the wavelength or spectrum of the irradiation.
Es ist unter Umständen vorteilhaft, ein Wellenlängenspektrum der Bestrahlung anzuwenden, welches im UV-Gebiet oder zwischen dem UV-Gebiet und dem Röntgengebiet liegt oder teilweise in das eine oder andere Gebiet hineinreicht. Außerdem ist die notwendige kurzwellige Bestrahlungsfrequenz dem Bindungstppus und/oder der Dotierung des Kristalls anzupassen.. Als Bestrahlungsdauer kommt für die meisten Zwecke eine Größenordnung von 1/z bis zu 2 Stunden in Frage.It may be advantageous to use a wavelength spectrum of the irradiation apply which in the UV area or between the UV area and the X-ray area or partially extends into one or the other area. In addition, the necessary short-wave irradiation frequency is the binding stop and / or adapt to the doping of the crystal .. As the irradiation time comes for most Purposes on the order of 1 / z up to 2 hours in question.
Gemäß einer weiteren Ausbildung des Erfindungsgedankens wird die Bestrahlung in einer definiertengegebenenfalls mit Spurenelement, z. B. Donatoren, Akzeptoren, Rekombinationszentren und/oder Haftstellen angereicherten - Gasatmosphäre aus Sauerstoff oder einem anderen Chalkogenid und/oder Edelgas geeigneten Druckes durchgeführt. Um -%"#olildefinierteIonenanlagerungen auf der Halbleiterkristalloberfläche zu erzeugen, welche durch die Bestrahlung umgelagert bzw. umgeladen werden sollen, ist es gemäß einer weiteren Ausbildung des Erfindungsgedankens zweckmäßig, die Halbleiteroberfläche zuvor hochgradig zu reinigen, beispielsweise durch eine chemische oder elektrochemische Abtragung bzw. Politur und/ oder eine Abdampfreinigung im Hochvakuum durch Erhitzen mindestens der Oberfläche auf erhöhte Temperatur bis zur Glühtemperatur oder durch Kathodenzerstäubung und erst anschließend die Bestrahlung in einer wohldefinierten Atmosphäre vorzunehmen. Unter Umständen geniigt es auch, die Kristalloberfläche nach der Reinigung einer wohldefinierten Atmosphäre auszusetzen, um sie dann im Hochvakuum zu bestrahlen. Die Bestrahlungszeiten liegen nach den. gemachten Erfahrungen zweckmäßig in der Größenordnung einiger Minuten bis ztt einer oder einigen Stunden.According to a further development of the inventive concept, the irradiation in a defined, possibly with trace element, e.g. B. Donors, acceptors, Recombination centers and / or traps enriched - gas atmosphere of oxygen or another chalcogenide and / or noble gas of suitable pressure. In order to generate -% "# oil-defined ion accumulations on the semiconductor crystal surface, which are to be relocated or reloaded by the irradiation, it is according to a further development of the inventive idea expediently, the semiconductor surface to be cleaned to a high degree beforehand, for example by a chemical or electrochemical Ablation or polishing and / or steam cleaning in a high vacuum by heating at least the surface to an elevated temperature up to the annealing temperature or through Cathode sputtering and only then the irradiation in a well-defined Atmosphere. The crystal surface may also be sufficient to expose it to a well-defined atmosphere after purification in order to then Irradiate high vacuum. The irradiation times are after. experiences made expediently in the order of a few minutes to ztt one or a few hours.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES45228A DE1044288B (en) | 1955-08-19 | 1955-08-19 | Method for reducing the noise and / or the temperature coefficient in semiconductor arrangements, for example rectifiers or transistors, also with tip electrodes or the like. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES45228A DE1044288B (en) | 1955-08-19 | 1955-08-19 | Method for reducing the noise and / or the temperature coefficient in semiconductor arrangements, for example rectifiers or transistors, also with tip electrodes or the like. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1044288B true DE1044288B (en) | 1958-11-20 |
Family
ID=7485461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES45228A Pending DE1044288B (en) | 1955-08-19 | 1955-08-19 | Method for reducing the noise and / or the temperature coefficient in semiconductor arrangements, for example rectifiers or transistors, also with tip electrodes or the like. |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1044288B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
-
1955
- 1955-08-19 DE DES45228A patent/DE1044288B/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
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