DE10361106A1 - Halbleiterbauteil mit einem Halbleiterchip und einer steifen Umverdrahtungsplatte und Verfahren zur Herstellung derselben - Google Patents

Halbleiterbauteil mit einem Halbleiterchip und einer steifen Umverdrahtungsplatte und Verfahren zur Herstellung derselben Download PDF

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Publication number
DE10361106A1
DE10361106A1 DE10361106A DE10361106A DE10361106A1 DE 10361106 A1 DE10361106 A1 DE 10361106A1 DE 10361106 A DE10361106 A DE 10361106A DE 10361106 A DE10361106 A DE 10361106A DE 10361106 A1 DE10361106 A1 DE 10361106A1
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Germany
Prior art keywords
semiconductor chip
wiring board
top side
semiconductor
underside
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Withdrawn
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DE10361106A
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English (en)
Inventor
Juergen Hoegerl
Gerold Gruendler
Volker Strutz
Erich Syri
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Infineon Technologies AG
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Infineon Technologies AG
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Priority to DE10361106A priority Critical patent/DE10361106A1/de
Publication of DE10361106A1 publication Critical patent/DE10361106A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/107—Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1094—Thermal management, e.g. cooling
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

Die Erfindung betrifft ein Halbleiterbauteil (10) mit einem Halbleiterchip (1) und einer steifen Umverdrahtungsplatte (2) und ein Verfahren zur Herstellung derselben. Die Umverdrahtungsplatte (2) weist auf ihrer Unterseite (9) Außenkontakte (3) auf und trägt auf ihrer Oberseite (6) einen Halbleiterchip (1). Die flächige Erstreckung der Umverdrahtungsplatte (2) ist größer als die flächige Erstreckung des Halbleiterchips (1). Die Umverdrahtungsplatte (2) weist eine nachgiebige Biegeelementstruktur (4) zur Biegeverformung der steifen Umverdrahtungsplatte (2) auf.
DE10361106A 2003-12-22 2003-12-22 Halbleiterbauteil mit einem Halbleiterchip und einer steifen Umverdrahtungsplatte und Verfahren zur Herstellung derselben Withdrawn DE10361106A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10361106A DE10361106A1 (de) 2003-12-22 2003-12-22 Halbleiterbauteil mit einem Halbleiterchip und einer steifen Umverdrahtungsplatte und Verfahren zur Herstellung derselben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10361106A DE10361106A1 (de) 2003-12-22 2003-12-22 Halbleiterbauteil mit einem Halbleiterchip und einer steifen Umverdrahtungsplatte und Verfahren zur Herstellung derselben

Publications (1)

Publication Number Publication Date
DE10361106A1 true DE10361106A1 (de) 2005-05-04

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DE10361106A Withdrawn DE10361106A1 (de) 2003-12-22 2003-12-22 Halbleiterbauteil mit einem Halbleiterchip und einer steifen Umverdrahtungsplatte und Verfahren zur Herstellung derselben

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006015241A1 (de) * 2006-03-30 2007-06-28 Infineon Technologies Ag Halbleiterbauteil mit einem Kunststoffgehäuse und teilweise in Kunststoff eingebetteten Außenkontakten sowie Verfahren zur Herstellung des Halbleiterbauteils
DE102010029522A1 (de) * 2010-05-31 2011-12-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verspannungsverringerung beim Einbringen eines Chips in ein Gehäuse mittels eines um den Chip herum ausgebildeten Spannungskompensationsgebiets
DE102010029521A1 (de) * 2010-05-31 2011-12-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Chipgehäuse mit mehreren Abschnitten zum Verringern der Chip-Gehäuse-Wechselwirkung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992006495A1 (en) * 1990-09-27 1992-04-16 E.I. Du Pont De Nemours And Company Thermal stress-relieved composite microelectronic device
US6050832A (en) * 1998-08-07 2000-04-18 Fujitsu Limited Chip and board stress relief interposer
US6175158B1 (en) * 1998-09-08 2001-01-16 Lucent Technologies Inc. Interposer for recessed flip-chip package
US6507099B1 (en) * 2000-10-20 2003-01-14 Silverbrook Research Pty Ltd Multi-chip integrated circuit carrier
WO2003073500A1 (en) * 2002-02-28 2003-09-04 Infineon Technologies Ag A substrate for a semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992006495A1 (en) * 1990-09-27 1992-04-16 E.I. Du Pont De Nemours And Company Thermal stress-relieved composite microelectronic device
US6050832A (en) * 1998-08-07 2000-04-18 Fujitsu Limited Chip and board stress relief interposer
US6175158B1 (en) * 1998-09-08 2001-01-16 Lucent Technologies Inc. Interposer for recessed flip-chip package
US6507099B1 (en) * 2000-10-20 2003-01-14 Silverbrook Research Pty Ltd Multi-chip integrated circuit carrier
WO2003073500A1 (en) * 2002-02-28 2003-09-04 Infineon Technologies Ag A substrate for a semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006015241A1 (de) * 2006-03-30 2007-06-28 Infineon Technologies Ag Halbleiterbauteil mit einem Kunststoffgehäuse und teilweise in Kunststoff eingebetteten Außenkontakten sowie Verfahren zur Herstellung des Halbleiterbauteils
DE102010029522A1 (de) * 2010-05-31 2011-12-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verspannungsverringerung beim Einbringen eines Chips in ein Gehäuse mittels eines um den Chip herum ausgebildeten Spannungskompensationsgebiets
DE102010029521A1 (de) * 2010-05-31 2011-12-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Chipgehäuse mit mehreren Abschnitten zum Verringern der Chip-Gehäuse-Wechselwirkung
US8497583B2 (en) 2010-05-31 2013-07-30 Globalfoundries Inc. Stress reduction in chip packaging by a stress compensation region formed around the chip
US8508053B2 (en) 2010-05-31 2013-08-13 Globalfoundries Inc. Chip package including multiple sections for reducing chip package interaction
DE102010029521B4 (de) 2010-05-31 2022-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Chipgehäuse mit mehreren Abschnitten zum Verringern der Chip-Gehäuse-Wechselwirkung
DE102010029522B4 (de) 2010-05-31 2022-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Verspannungsverringerung beim Einbringen eines Chips in ein Gehäuse mittels eines um den Chip herum ausgebildeten Spannungskompensationsgebiets

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