DE10346312A1 - Halbleiterbauteil - Google Patents

Halbleiterbauteil Download PDF

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Publication number
DE10346312A1
DE10346312A1 DE2003146312 DE10346312A DE10346312A1 DE 10346312 A1 DE10346312 A1 DE 10346312A1 DE 2003146312 DE2003146312 DE 2003146312 DE 10346312 A DE10346312 A DE 10346312A DE 10346312 A1 DE10346312 A1 DE 10346312A1
Authority
DE
Germany
Prior art keywords
insulation structure
function elements
metal
silicide
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE2003146312
Other languages
English (en)
Other versions
DE10346312B4 (de
Inventor
Wolfgang Werner
Jenoe Thihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE2003146312 priority Critical patent/DE10346312B4/de
Publication of DE10346312A1 publication Critical patent/DE10346312A1/de
Application granted granted Critical
Publication of DE10346312B4 publication Critical patent/DE10346312B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)

Abstract

Ein Halbleiterbauteil (1', 1''), das mehrere parallel bzw. seriell zueinander geschaltete Halbleiter-Funktionselemente aufweist, beinhaltet: eine erste und eine zweite Halbleiterschicht (2, 3), wobei die zweite Halbleiterschicht (3) auf der ersten Halbleiterschicht (2) aufgebracht und zu dieser invers dotiert ist. Des Weiteren beinhaltet das Halbleiterbauteil (1', 1'') Isolatorstrukturen (4, 5), die wenigstens in der zweiten Halbleiterschicht (3) vorgesehen sind und die zur Aufteilung der zweiten Halbleiterschicht (3) in mehrere voneinander isolierte Halbleitergebiete (6, 7, 8) dienen, wobei jedes Halbleiter-Funktionselement wenigstens zum Teil aus einem der Halbleitergebiete (6, 7, 8) gebildet wird. Die Isolatorstrukturen (4, 5) bestehen hierbei wenigstens teilweise aus Metall/Silizid.
DE2003146312 2003-10-06 2003-10-06 Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen Expired - Fee Related DE10346312B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2003146312 DE10346312B4 (de) 2003-10-06 2003-10-06 Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2003146312 DE10346312B4 (de) 2003-10-06 2003-10-06 Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen

Publications (2)

Publication Number Publication Date
DE10346312A1 true DE10346312A1 (de) 2005-05-04
DE10346312B4 DE10346312B4 (de) 2015-04-09

Family

ID=34399282

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2003146312 Expired - Fee Related DE10346312B4 (de) 2003-10-06 2003-10-06 Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen

Country Status (1)

Country Link
DE (1) DE10346312B4 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161834A (ja) * 1983-03-07 1984-09-12 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5200639A (en) * 1990-05-31 1993-04-06 Canon Kabushiki Kaisha Semiconductor device with isolating groove containing single crystalline aluminum wiring
US5889314A (en) * 1996-06-03 1999-03-30 Nec Corporation Mixed-mode IC having an isolator for minimizing cross-talk through substrate and method of fabricating same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161834A (ja) * 1983-03-07 1984-09-12 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5200639A (en) * 1990-05-31 1993-04-06 Canon Kabushiki Kaisha Semiconductor device with isolating groove containing single crystalline aluminum wiring
US5889314A (en) * 1996-06-03 1999-03-30 Nec Corporation Mixed-mode IC having an isolator for minimizing cross-talk through substrate and method of fabricating same

Also Published As

Publication number Publication date
DE10346312B4 (de) 2015-04-09

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee