DE10345514A1 - Process for forming a layer on a substrate comprises using a plasma to which a gaseous or plasma-like component is added - Google Patents

Process for forming a layer on a substrate comprises using a plasma to which a gaseous or plasma-like component is added Download PDF

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Publication number
DE10345514A1
DE10345514A1 DE10345514A DE10345514A DE10345514A1 DE 10345514 A1 DE10345514 A1 DE 10345514A1 DE 10345514 A DE10345514 A DE 10345514A DE 10345514 A DE10345514 A DE 10345514A DE 10345514 A1 DE10345514 A1 DE 10345514A1
Authority
DE
Germany
Prior art keywords
plasma
layer
component
gaseous
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10345514A
Other languages
German (de)
Inventor
Cay-Uwe Pinnow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10345514A priority Critical patent/DE10345514A1/en
Publication of DE10345514A1 publication Critical patent/DE10345514A1/en
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Process for forming a layer on a substrate (2) comprises using a plasma (5) to which a gaseous or plasma-like component (4) is added. The component contains a second material (14) which is deposited on the substrate. A further layer is deposited on the substrate, in which a first material (13) and the second material are present in a chemical compound.
DE10345514A 2003-09-30 2003-09-30 Process for forming a layer on a substrate comprises using a plasma to which a gaseous or plasma-like component is added Ceased DE10345514A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10345514A DE10345514A1 (en) 2003-09-30 2003-09-30 Process for forming a layer on a substrate comprises using a plasma to which a gaseous or plasma-like component is added

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10345514A DE10345514A1 (en) 2003-09-30 2003-09-30 Process for forming a layer on a substrate comprises using a plasma to which a gaseous or plasma-like component is added

Publications (1)

Publication Number Publication Date
DE10345514A1 true DE10345514A1 (en) 2005-05-12

Family

ID=34428154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10345514A Ceased DE10345514A1 (en) 2003-09-30 2003-09-30 Process for forming a layer on a substrate comprises using a plasma to which a gaseous or plasma-like component is added

Country Status (1)

Country Link
DE (1) DE10345514A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2132986A1 (en) * 1971-07-02 1973-01-18 Siemens Ag Spinel-perovskite coatings prodn - by cathode sputtering into inert/reactive gas mixture for requried stoichimetry
JPS5689061A (en) * 1979-12-21 1981-07-20 Matsushita Electric Ind Co Ltd Solid-state electrochemical element
US4596645A (en) * 1984-10-23 1986-06-24 California Institute Of Technology Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
JPH05230636A (en) * 1992-02-19 1993-09-07 Nikon Corp Formation of metallic oxide thin film
DE19735903A1 (en) * 1997-08-19 1999-03-11 Klinger Ag Ball valve

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2132986A1 (en) * 1971-07-02 1973-01-18 Siemens Ag Spinel-perovskite coatings prodn - by cathode sputtering into inert/reactive gas mixture for requried stoichimetry
JPS5689061A (en) * 1979-12-21 1981-07-20 Matsushita Electric Ind Co Ltd Solid-state electrochemical element
US4596645A (en) * 1984-10-23 1986-06-24 California Institute Of Technology Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
JPH05230636A (en) * 1992-02-19 1993-09-07 Nikon Corp Formation of metallic oxide thin film
DE19735903A1 (en) * 1997-08-19 1999-03-11 Klinger Ag Ball valve

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8131 Rejection