DE10345160A1 - Multibit storage element used in microelectronics comprises two different chemical substances arranged between a first electrode and a second electrode - Google Patents

Multibit storage element used in microelectronics comprises two different chemical substances arranged between a first electrode and a second electrode Download PDF

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Publication number
DE10345160A1
DE10345160A1 DE10345160A DE10345160A DE10345160A1 DE 10345160 A1 DE10345160 A1 DE 10345160A1 DE 10345160 A DE10345160 A DE 10345160A DE 10345160 A DE10345160 A DE 10345160A DE 10345160 A1 DE10345160 A1 DE 10345160A1
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DE
Germany
Prior art keywords
electrode
storage element
chemical substances
different chemical
element used
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10345160A
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German (de)
Inventor
Rainer Hoehler
Wolfgang Radlik
Guenter Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10345160A priority Critical patent/DE10345160A1/en
Publication of DE10345160A1 publication Critical patent/DE10345160A1/en
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/652—Cyanine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00

Abstract

Multibit storage element comprises two different chemical substances arranged between a first electrode and a second electrode. The chemical substances differ in the size of the physical-chemical properties used for the storage function of in the time to reach these properties. An independent claim is also included for a process for the production of a multibit storage element.
DE10345160A 2003-09-29 2003-09-29 Multibit storage element used in microelectronics comprises two different chemical substances arranged between a first electrode and a second electrode Ceased DE10345160A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10345160A DE10345160A1 (en) 2003-09-29 2003-09-29 Multibit storage element used in microelectronics comprises two different chemical substances arranged between a first electrode and a second electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10345160A DE10345160A1 (en) 2003-09-29 2003-09-29 Multibit storage element used in microelectronics comprises two different chemical substances arranged between a first electrode and a second electrode

Publications (1)

Publication Number Publication Date
DE10345160A1 true DE10345160A1 (en) 2005-05-04

Family

ID=34399023

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10345160A Ceased DE10345160A1 (en) 2003-09-29 2003-09-29 Multibit storage element used in microelectronics comprises two different chemical substances arranged between a first electrode and a second electrode

Country Status (1)

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DE (1) DE10345160A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005009511B3 (en) * 2005-02-24 2006-12-14 Infineon Technologies Ag A semiconductor memory device and method of manufacturing a semiconductor memory device
WO2007148335A2 (en) * 2006-06-19 2007-12-27 Ramot At Tel Aviv University Ltd. Molecular electronic devices and methods of fabricating same
DE102008030926A1 (en) 2007-07-07 2009-01-29 Universität Regensburg Ruthenium or osmium complexes of tetrakis-styryl-ethene with carbonyl ligands and optionally other ligands, used in electronic components, e.g. as light-absorber materials in photovoltaic cells
DE102008006374A1 (en) * 2007-09-27 2009-04-02 Osram Opto Semiconductors Gmbh Electrical organic module, useful e.g. as field effect transistor, comprises a substrate, a first and second electrode layer, a functional organic layer and a self organizing mono layer containing molecules with a main and an anchor group
DE102011017572A1 (en) * 2011-04-27 2012-10-31 Siemens Aktiengesellschaft Component with oriented organic semiconductor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US111670A (en) * 1871-02-07 Improvement in meat-cutters
US168785A (en) * 1875-10-11 Improvement in iron fences
US5999438A (en) * 1997-05-12 1999-12-07 Sony Corporation Ferroelectric storage device
US6285596B1 (en) * 1997-04-25 2001-09-04 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
US6324091B1 (en) * 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage
DE10219396A1 (en) * 2002-04-30 2003-11-20 Infineon Technologies Ag Semiconductor memory cell with storage capacitor consisting of two electrodes, sandwiching ferroelectric storage region containing several ferroelectric storage dielectric sections

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US111670A (en) * 1871-02-07 Improvement in meat-cutters
US168785A (en) * 1875-10-11 Improvement in iron fences
US6285596B1 (en) * 1997-04-25 2001-09-04 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
US5999438A (en) * 1997-05-12 1999-12-07 Sony Corporation Ferroelectric storage device
US6324091B1 (en) * 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage
DE10219396A1 (en) * 2002-04-30 2003-11-20 Infineon Technologies Ag Semiconductor memory cell with storage capacitor consisting of two electrodes, sandwiching ferroelectric storage region containing several ferroelectric storage dielectric sections

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005009511B3 (en) * 2005-02-24 2006-12-14 Infineon Technologies Ag A semiconductor memory device and method of manufacturing a semiconductor memory device
WO2007148335A2 (en) * 2006-06-19 2007-12-27 Ramot At Tel Aviv University Ltd. Molecular electronic devices and methods of fabricating same
WO2007148335A3 (en) * 2006-06-19 2008-08-21 Univ Ramot Molecular electronic devices and methods of fabricating same
DE102008030926A1 (en) 2007-07-07 2009-01-29 Universität Regensburg Ruthenium or osmium complexes of tetrakis-styryl-ethene with carbonyl ligands and optionally other ligands, used in electronic components, e.g. as light-absorber materials in photovoltaic cells
DE102008006374A1 (en) * 2007-09-27 2009-04-02 Osram Opto Semiconductors Gmbh Electrical organic module, useful e.g. as field effect transistor, comprises a substrate, a first and second electrode layer, a functional organic layer and a self organizing mono layer containing molecules with a main and an anchor group
DE102008006374B4 (en) * 2007-09-27 2018-12-06 Osram Oled Gmbh Electric organic component and method for its production
DE102011017572A1 (en) * 2011-04-27 2012-10-31 Siemens Aktiengesellschaft Component with oriented organic semiconductor
US9159959B2 (en) 2011-04-27 2015-10-13 Siemens Aktiengesellschaft Component having an oriented organic semiconductor

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