DE10344986B4 - Method of producing improved heteroepitaxial grown silicon carbide layers on silicon substrates - Google Patents
Method of producing improved heteroepitaxial grown silicon carbide layers on silicon substrates Download PDFInfo
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- DE10344986B4 DE10344986B4 DE2003144986 DE10344986A DE10344986B4 DE 10344986 B4 DE10344986 B4 DE 10344986B4 DE 2003144986 DE2003144986 DE 2003144986 DE 10344986 A DE10344986 A DE 10344986A DE 10344986 B4 DE10344986 B4 DE 10344986B4
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 11
- 239000010703 silicon Substances 0.000 title claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 230000007547 defect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 66
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000001294 propane Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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Abstract
Verfahren
zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten
auf Siliziumsubstraten,
wobei das Siliziumsubstrat vorgeheizt
und die Oberfläche der
Epitaxieschicht mit einem Lichtimpuls bestrahlt wird,
dadurch
gekennzeichnet,
daß vor
dem Vorheizen und vor der Lichtimpulsbestrahlung ein aus einer Zwischenschicht
und einer Abdeckschicht bestehendes Hilfsschichtsystem aufgebracht
wird und
daß das
Hilfsschichtsystem nach erfolgter Lichtimpulsbehandlung und eingetretener
Strukturumwandlung entfernt wird.Method of producing improved heteroepitaxial grown silicon carbide layers on silicon substrates,
wherein the silicon substrate is preheated and the surface of the epitaxial layer is irradiated with a light pulse,
characterized,
in that an auxiliary layer system comprising an intermediate layer and a cover layer is applied before the preheating and before the light pulse irradiation, and
that the auxiliary layer system is removed after light pulse treatment and structure conversion has taken place.
Description
Die Erfindung betrifft ein Verfahren zur Erzeugung verbesserterer heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten. Insbesondere sollen dünne kubische SiC-Schichten (3C-SiC) mit verbesserter Qualität abgeschieden werden können.The The invention relates to a process for producing improved heteroepitaxial grown silicon carbide layers on silicon substrates. Especially should be thin deposited cubic SiC layers (3C-SiC) with improved quality can be.
Die Eignung von SiC für die Verwendung in elektronischen Bauelementen zum Einsatz bei hohen Temperaturen, hoher Leistung und hohen Frequenzen ist in der Halbleitertechnologie bestens bekannt.The Suitability of SiC for the use in electronic components for use at high temperatures, high power and high frequencies is in semiconductor technology well known.
SiC existiert in zwei kristallinen Hauptmodifikationen, der hexagonalen und der kubischen. Die hexagonale Modifikation, allgemein als α-SiC bezeichnet, hat eine große Zahl von Polytypen, wovon 4H-SiC und 6H-SiC die bekanntesten sind. Die kubische Modifikation hat die Zinkblendestruktur und ist als β-SiC oder 3C-SiC bekannt. Rein theoretisch sollte dem kubischen Material der Vorzug gegeben werden, da es die höchste Elektronenbeweglichkeit aller SiC-Polytype im Temperaturbereich von 300 bis 1000 K hat. Darüber hinaus sollten sorgfältig hergestellte kubische Schichten frei von bestimmten kristallografischen Defekten sein, die in hexagonalen Modifikationen unvermeidlich sind. Ebenso zeigen die in kubischem Material erzeugten Bauelemente eine niedrigere Dioden-Einsatzspannung. Nachteilig ist vor allem, dass kubisches Material in Form von einkristallinen Substraten hoher Qualität und ausreichender Größe noch nicht kommerziell verfügbar ist.SiC exists in two major crystalline modifications, the hexagonal ones and the cubic. The hexagonal modification, commonly referred to as α-SiC, Has a size Number of polytypes of which 4H-SiC and 6H-SiC are the best known. The cubic modification has the zincblende structure and is referred to as β-SiC or 3C-SiC known. Theoretically, the cubic material of the Preference will be given, as it has the highest electron mobility all SiC polytype in the temperature range of 300 to 1000 K has. In addition, carefully crafted cubic Be layers free from certain crystallographic defects, which are unavoidable in hexagonal modifications. Likewise show the components produced in cubic material have a lower one Diode threshold voltage. The main disadvantage is that cubic Material in the form of single-crystal substrates of high quality and sufficient size yet not commercially available is.
Die vielversprechendste Technik für die Erzeugung von 3C-SiC ist das heteroepitaktische CVD-Wachstum auf einkristallinen, (100)-orientierten Si-Substraten, da es sich bei letzteren um Material exzellenter Qualität mit vergleichsweise niedrigen Kosten handelt. Bis jetzt sind aber alle Versuche zur Erzeugung von 3C-SiC/Si-Substraten ausreichender Größe nicht erfolgreich gewesen.The most promising technology for the generation of 3C-SiC is heteroepitaxial CVD growth on monocrystalline, (100) -oriented Si substrates, since the latter are more excellent material quality with comparatively low costs. So far, though not all attempts to produce 3C SiC / Si substrates of sufficient size been successful.
Ein in der Natur der Sache liegendes Problem der 3C-SiC/Si-Heteroepitaxie ist die Gitterfehlanpassung von ca. 20% zwischen den beiden Gittern, die zur Erzeugung einer sehr hohen Dichte kristallografischer Defekte in der dünnen (20–40 nm) 3C-SiC-Schicht schon während der Anfangsphase des Wachstums führt. Diese Defekte führen dann während des weiteren Wachstums zur Ausbildung ausgedehnter Defekte, die sich durch die gesamte aufgewachsene Schicht ziehen. Diese werden als Ursache für die schlechten Bauelementeigenschaften gegenüber den auf hexagonalem 4H- oder 6H-SiC hergestellten Bauelementen angesehen.One natural problem of 3C SiC / Si heteroepitaxy is the lattice mismatch of about 20% between the two lattices, for generating a very high density of crystallographic defects in the thin one (20-40 nm) 3C-SiC layer already during the initial phase of growth leads. These defects lead then while further growth to the formation of extensive defects, the to go through the entire grown up layer. These will as cause for the poor device properties over those on hexagonal 4H or 6H-SiC manufactured components.
Es
ist bereits ein Verfahren zur Behandlung heteroepitaktischer Halbleiterschichten
auf Siliziumsubstraten bekannt, bei dem die Oberfläche der
Epitaxieschicht ganzflächig
mit einem Lichtimpuls bestrahlt wird (
Aufgabe der Erfindung ist es, ein Verfahren vorzuschlagen, mit dem es möglich ist, die in der unteren Schicht vorhandenen gewünschten Eigenschaften der mit Lichtimpulsen behandelten Substrate für den weiteren Prozess verwertbar zu machen und die Welligkeit der Schicht zu verringern oder zu vermeiden.task The invention is to propose a method with which it is possible to the present in the lower layer desired properties of Light pulses treated substrates usable for the further process and to reduce or avoid the waviness of the layer.
Erfindungsgemäß wird die Aufgabe mit den in den Patentansprüchen dargelegten Merkmalen gelöst.According to the invention Problem solved by the features set out in the claims.
Dabei
ist wesentlich, dass das Verfahren über die bereits in
Die Erfindung wird nachstehend an einem Ausführungsbeispiel näher erläutert.The invention will be described below on a Embodiment explained in more detail.
Die Herstellung einer 3C-SiC-Si-Heterostruktur mit verbesserter Qualität umfasst die folgenden Schritte:
- (a) Ein kommerzielles, (100)-orientiertes Si-Substrat wird mit einer in der Halbleiterindustrie üblichen chemischen Standardreinigung zur Erzeugung einer sauberen Oberfläche behandelt. Das kann z. B. die Spülung in Methanol und einen HF-Dip zur Entfernung der natürlichen Oxidschicht umfassen.
- (b) Das optimierte CVD-Wachstum einer dünnen 3C-SiC-Schicht auf Si erfolgt entsprechend der Beschreibung von T. Chassange et al. in Thin Solid Films 402 (2002) 83. In diesem Fall wird die Ausgangsschicht bei Atmosphärendruck in einem vertikalen Kaltwand-Reaktor unter Verwendung von Silan (1% in H2) und Propan (5% in H2) als Reaktionsgase und gereinigtem H2 als Trägergas gewachsen. Der Wachstumsprozess umfasst die Karbonisierung des Si-Substrates bei 1150°C unter Verwendung eines Gemisches von H2 (12 slm) and propane (C3H8, 12 sccm) für 10 min. Die Bildung von Hohlräumen an der 3C-SiC-Si Grenzfläche wird dadurch vermieden, dass zuerst Propan in den Reaktor eingeleitet wird und danach die Aufheizung des Substrates mit 8K/s erfolgt. Nach Abschluss der Karbonisierung wird die Temperatur auf 1350°C mit einer Heizrate von 4,5 K/s erhöht Danach wird Silan in den Reaktor eingeleitet, um das epitaktische 3C-SiC-Wachstum durchzuführen. Die Dicke der so gewachsenen Schicht ist üblicherweise unter 50 nm und typischerweise 35 nm.
- (c) Danach wird eine Zwischenschicht aus polykristallinem, amorphem oder defektreichem einkristallinem Silizium auf der 3C-SiC-Schicht nach (b) abgeschieden. Die Si-Schicht kann in demselben CVD-Reaktor wie die 3C-SiC-Schicht aufgewachsen werden, wobei Silangas bei einer Temperatur von 1000°C verwendet werden kann. Die Dicke der Si-Schicht sollte erfindungsgemäß im Bereich 0,1–1 μm liegen.
- (d) Danach wird eine dünne Abdeckschicht aus SiC, SiO2 oder SiOXNYauf die Zwischenschicht nach (c) abgeschieden. Die Dicke dieser Schicht sollte im Bereich von 20 bis 50 nm liegen.
- (e) Nachfolgend wird die Wärmebehandlung mit Vorheizung und Lichtimpuls in bekannter Weise an der vorher beschriebenen Schichtstruktur durchgeführt.
- (a) A commercial, (100) oriented Si substrate is treated with a standard chemical cleaning standard in the semiconductor industry to produce a clean surface. This can z. For example, the rinse in methanol and an HF dip to remove the natural oxide layer include.
- (b) The optimized CVD growth of a thin 3C-SiC layer on Si is done as described by T. Chassange et al. in Thin Solid Films 402 (2002) 83. In this case, the starting layer is dried at atmospheric pressure in a vertical cold wall reactor using silane (1% in H 2 ) and propane (5% in H 2 ) as reaction gases and purified H 2 grown as a carrier gas. The growth process involves carbonizing the Si substrate at 1150 ° C using a mixture of H 2 (12 slm) and propane (C 3 H 8 , 12 sccm) for 10 min. The formation of voids at the 3C-SiC-Si interface is avoided by first introducing propane into the reactor and then heating the substrate at 8K / s. After completion of the carbonization, the temperature is raised to 1350 ° C with a heating rate of 4.5 K / s. Thereafter, silane is introduced into the reactor to carry out the epitaxial 3C-SiC growth. The thickness of the thus grown layer is usually below 50 nm and typically 35 nm.
- (c) Thereafter, an intermediate layer of polycrystalline, amorphous or defect-rich monocrystalline silicon is deposited on the 3C-SiC layer according to (b). The Si layer can be grown in the same CVD reactor as the 3C-SiC layer, whereby silane gas can be used at a temperature of 1000 ° C. According to the invention, the thickness of the Si layer should be in the range 0.1-1 μm.
- (d) Thereafter, a thin capping layer of SiC, SiO 2 or SiO X N Y is deposited on the intermediate layer of (c). The thickness of this layer should be in the range of 20 to 50 nm.
- (e) Subsequently, the heat treatment with preheating and light pulse is carried out in a known manner on the previously described layer structure.
Die typischen Prozessbedingungen, mit welchen die gegenwärtige Erfindung angewendet wird, sind wie folgt: Die Dauer des Lichtimpulses, der mittels Xenon-Lampen realisiert wird, ist im Bereich von 1–100 ms. Vorzugsweise wird ein Prozess mit einer Pulsdauer von 20 ms verwendet. Die Energiedichte muss genügend hoch sein, um den geforderten Effekt zu erreichen, typischerweise 50–200 J/cm2. Vorzugsweise sollte ein Wert von 100 J/cm2 verwendet werden. Die Vorheizung erfolgt mittels einer Bank von Halogenlampen. Der Bereich der Vorheiztemperatur sollte zwischen 200° und 2000°C liegen. Ein bevorzugter Wert ist 800°C. Der gesamte Temperprozess erfolgt in inerter Atmosphäre bei Normaldruck, vorzugsweise in Argongas.
- (f) Schließlich werden die Deckschicht und die Zwischenschicht durch eine geeignete physikalische und/oder chemische Ätzprozedur entfernt, um die mit verbesserter Qualität erzeugte 3C-SiC-Schicht freizulegen. Typischerweise wird nasschemisches Ätzen oder reaktives Ionenätzen angewendet.
- (f) Finally, the capping layer and the intermediate layer are removed by an appropriate physical and / or chemical etching procedure to expose the improved quality 3C-SiC layer. Typically, wet chemical etching or reactive ion etching is used.
Nach dem Abschluss von Schritt (b) enthält die abgeschiedene SiC-Schicht mikrostrukturelle Defekte hoher Dichte, deren Ursache wesentlich in der hohen Gitterfehlanpassung von ca. 20% zwischen Si und 3C-SiC liegen. Beispielsweise haben Untersuchungen gezeigt, dass die Versetzungsdichte in der Nähe der Grenzfläche SiC/Si im Bereich von 1 × 1011 bis 1 × 1012 cm–2 liegt. Eine zusätzliche Spannung in der Grenzflächenregion wird durch den Unterschied der thermischen Ausdehnungskoeffizienten der beiden Materialien bewirkt.Upon completion of step (b), the deposited SiC layer contains high density microstructural defects, the cause of which is substantially in the high lattice mismatch of about 20% between Si and 3C-SiC. For example, studies have shown that the dislocation density in the vicinity of the SiC / Si interface is in the range of 1 × 10 11 to 1 × 10 12 cm -2 . Additional stress in the interface region is caused by the difference in thermal expansion coefficients of the two materials.
Eine
direkte Behandlung der abgeschiedenen 3C-SiC-Schicht mit hoher Defektdichte
nach (b) mit der Wärmebehandlung
nach (e) ohne die vorherige Abscheidung der zusätzlichen Schichten nach (c) und
(d), wie dies in
Die oben angeführten Nachteile des Standes der Technik werden jetzt durch die Einführung der Zwischenschicht aus Silizium nach Schritt (c) beseitigt. Die Rolle dieser Schicht wird aus der folgenden Beschreibung deutlich. Die Funktion der Abdeckschicht nach (d) dient der Vermeidung der Inselbildung der Zwischenschicht bzw. ihrer Verdampfung während des Temperprozesses. Die Qualität der resultierenden 3C-SiC-Schichten hängt entscheidend von der Wärmebehandlung nach (e) ab. Dieser Prozess umfasst drei Schritte: (i) einen Vorheizschritt für das Aufheizen des Substrates auf eine ausgewählte Temperatur, z. B. mit einer Halogenlampen-Bank für eine Zeitdauer, die für das Erreichen des thermischen Gleichgewichtes ausreichend ist und damit einen thermischen Schock während der eigentlichen Lichtimpuls-Temperung vermeiden soll, (ii) den eigentlichen Ausheilschritt mittels Lichtimpuls bei einer höheren Temperatur und einer deutlich kürzeren Zeit und, (iii) einen Abkühlschritt, währenddessen Prozesse wie Stressausgleich, Erstarrung und Rekristallisation stattfinden können.The above-mentioned disadvantages of the prior art are now overcome by the introduction of the intermediate layer of silicon after step (c). The role of this layer will become apparent from the following description. The function of the covering layer according to (d) serves to avoid islanding of the intermediate layer or its evaporation during the annealing process. The quality of the resulting 3C-SiC layers depends critically on the heat treatment after (e). This process comprises three steps: (i) a preheating step for heating the substrate to a selected temperature, e.g. B. with a halogen lamp bank for a period of time that is sufficient for the achievement of thermal equilibrium and thus a (ii) the actual annealing step by means of a light pulse at a higher temperature and a much shorter time; and (iii) a cooling step during which processes such as stress balance, solidification and recrystallization can take place.
Es ist zu unterstreichen, dass die Vorheizung der Anordnung auf eine bestimmte Temperatur ein wesentlicher Teil des Temperprozesses ist. Sobald die Temperatur der Anordnung den geforderten Wert erreicht, werden die Blitzlampen aktiviert, einen Lichtimpuls zu erzeugen. Dieser führt dann zu einem Temperatursprung auf der Oberseite der Anordnung.It is to emphasize that the preheating of the arrangement on a certain temperature is an essential part of the annealing process. As soon as the temperature of the arrangement reaches the required value, The flash lamps are activated to generate a light pulse. This leads then to a temperature jump on the top of the arrangement.
Der von der den Xenonlampen-Anordnung generierte Lichtimpuls ist auf das Substratmaterial gerichtet, bestrahlt dessen nahe Oberfläche und beeinflusst selektiv darin befindliche Regionen. Die durch den Lichtimpuls deponierte Energie führt zu einem extrem schnellen thermischen Prozess auf der Substratoberseite, wobei in der bearbeiteten Region hohe Temperaturen für effektive Zeitdauern im Millisekunden-Bereich erreicht werden, solange bis der thermische Ausgleich nach dem Ende des Lichtimpulses stattgefunden hat.Of the from the xenon lamp array generated light pulse is on the substrate material is directed, irradiating its near surface and selectively affects regions in it. The light pulse deposited energy leads to an extremely fast thermal process on the substrate top, where in the processed region high temperatures for effective Periods in the millisecond range can be achieved as long as to the thermal compensation took place after the end of the light pulse Has.
Dabei wird erfindungsgemäß die aus Si bestehende Zwischenschicht aufgeschmolzen und in den flüssigen Zustand versetzt. Entsprechend dem Si-SiC Phasendiagramm erfolgt nun ein Auflösen des oberen Teils der dünnen 3C-SiC-Schicht und mit dem Ende des Lichtimpulses eine Abkühlung, wobei es zur Erstarrung des flüssigen Bereiches und damit einhergehend einer epitaktischen Rekristallisation kommt.there is according to the invention from Si existing intermediate layer melted and in the liquid state added. According to the Si-SiC phase diagram is now a Dissolve the upper part of the thin one 3C-SiC layer and with the end of the light pulse, a cooling, wherein it to the solidification of the liquid Range and accompanied by an epitaxial recrystallization comes.
Infolge des eben beschriebenen Prozesses wird eine 3C-SiC-Schicht erzeugt, deren oberer Teil von deutlich besserer Qualität als der der Ausgangsschicht ist.As a result of the process just described, a 3C-SiC layer is produced, the upper part of much better quality than the original layer is.
Ein kontrolliert gerichtetes und selektives Schmelzen der Schicht kann durch zweckgerichtete Wahl der Parameter der Wärmebehandlung erreicht werden.One controlled directional and selective melting of the layer can be achieved by purposeful choice of the parameters of the heat treatment.
Die resultierende dünne SiC-Schicht mit deutlich verbesserter Qualität kann als Keim für das weitere epitaktische Wachstum einer dicken (bis zu 10 μm) 3C-SiC-Schicht dienen. Die Möglichkeit der Herstellung solcher Schichten vereinfacht wiederum die Entwicklung von (100)-orientierten 3C-SiC-Substraten.The resulting thin SiC layer with significantly improved quality can be used as a germ for the further epitaxial growth of a thick (up to 10 microns) 3C-SiC layer serve. The possibility the production of such layers in turn simplifies the development of (100) -oriented 3C-SiC substrates.
Während der offengelegte grundsätzliche Aspekt der jetzigen Erfindung sich auf die Erzeugung einer dünnen 3C-SiC-Schicht bezieht, ergibt sich für die mit dem Fachgebiet Vertrauten sofort, dass andere epitaktische Schichten wie Galliumnitrid (GaN) unter Verwendung der hier beschriebenen SiC-Schicht hoher Qualität ebenso aufgewachsen werden können. In ähnlicher Weise ist das Verfahren auf andere heteroepitaktische Schicht/Schicht bzw. Schicht/Substrat-Systeme erweiterbar.During the disclosed fundamental aspect In the present invention, the production of a thin 3C-SiC layer relates, results for the Familiar with the subject immediately that other epitaxial layers such as gallium nitride (GaN) using the ones described herein SiC layer of high quality can be raised as well. In similar Way is the method to other heteroepitaxial layer / layer or layer / substrate systems expandable.
Claims (5)
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PCT/DE2004/002153 WO2005031825A1 (en) | 2003-09-27 | 2004-09-27 | Method for treating heteroepitaxially grown semi-conductor layers on semi-conductor substrates, semi-conductor substrate comprising a treated semi-conductor layer and semi-conductor component made of said type of semi-conductor substrate |
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